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Wyświetlanie 1-15 z 38
Tytuł:
Interfacial Reactions between Thin Films of Zinc and (100)InP
Autorzy:
Kamińska, E.
Piotrowska, A.
Barcz, A.
Mizera, E.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1933803.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The effects of interaction between thin films of Zn and (100)InP were studied with secondary ion mass spectrometry, X-ray diffraction and transmission electron microscopy. Zn was found to penetrate the native oxide on InP surface during deposition and to form an ohmic contact when deposited on highly doped n-type InP. Heat treatment causes the formation of Zn$\text{}_{3}$P$\text{}_{2}$ phase lattice matched to InP.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 771-774
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Speed of Ultrasound and Internal Pressure of Propanediol and Butanediol Isomers under Elevated Pressures
Autorzy:
Zorębski, E.
Piotrowska, M.
Dzida, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811570.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.30.Rs
62.50.-p
Opis:
Speed of ultrasound and internal pressure of 1,2-propanediol, 1,3-propanediol, 1,2-butanediol, and 1,3-butanediol at the temperatures ranging from 293.15 to 318.15 K and pressures up to 101 MPa are analyzed and discussed in terms of molecular structure and ability to form inter- and intramolecular hydrogen bonds.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-265-A-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction between Thin Films of Zinc and (100) GaAs
Autorzy:
Kamińska, E.
Piotrowska, A.
Żarecka, R.
Mizera, E.
Powiązania:
https://bibliotekanauki.pl/articles/1929624.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Interfacial reactions between thin films of Zn and GaAs were studied by means of transmission electron microscopy. Low-temperature interaction is governed by the penetration of Zn into the native oxide layer at the metal/GaAs interface. At 360°C the formation of Zn$\text{}_{3}$As$\text{}_{2}$ phase, highly oriented with respect to the (100) substrate takes place.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 527-529
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
Autorzy:
Borysiewicz, M.
Wojciechowski, T.
Dynowska, E.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198573.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.70.-m
81.15.Cd
77.55.hf
81.10.Pq
52.27.Cm
Opis:
Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1144-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of the Bacterial Surfaces by XPS and SEM Methods
Autorzy:
Płoszaj-Pyrek, J.
Talik, E.
Piotrowska-Seget, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1197681.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.64.-t
71.20.Rv
61.66.Hq
31.50.Gh
Opis:
This work presents the results of studies on bacteria Bacillus subtilis which was grown at different temperatures. The experiments were carried out using X-ray photoelectron spectroscopy and scanning electron microscope equipped with "cryo-chamber", which gives the possibility of testing biological samples in a frozen state. These methods enabled receiving images of surface topography of the bacteria and demarcated their chemical composition. After deconvolution of the lines C 1s and O 1s information concerning the intensity of the various functional groups in the bindings presented in the cell walls surface of tested strain and reallocation in relation to the temperature of incubation was obtained. These changes are visible in the form of an additional peak in both the C 1s and O 1s in bacteria cultured in suboptimum temperature.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 929-931
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Behaviour in Low-Resistance Metal/p-GaAs Interfaces
Autorzy:
Kamińska, E.
Piotrowska, A.
Kasjaniuk, S.
Gierlotka, S.
Powiązania:
https://bibliotekanauki.pl/articles/1950962.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The relationship between electrical properties and microstructure of pure Zn and AuZn contacts to p-GaAs has been studied. The obtained results prove that mechanism responsible for the ohmic behaviour of these contacts is associated with the lowering of the potential barrier at metal/semiconductor interface, resulting from the phase transformations in the metallization.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 843-846
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Phosphorus Release during Annealing of Au Contacts to InP
Autorzy:
Piotrowska, A.
Kamińska, E.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923864.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
The analysis of phosphorus release from Au/InP contacts heat treated at temperature from the range 360-480°C showed that P evaporation accompanies any stage of contact reaction. The use of encapsulating layer during contact annealing suppresses the loss of phosphorus and changes the kinetics of thermally activated interfacial reaction.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 849-852
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Atomic Scale Morphology of Thin Au(Zn)/GaAs Ohmic Contacts
Autorzy:
Kamińska, E.
Piotrowska, A.
Żarecka, R.
Barcz, A.
Mizera, E.
Kwiatkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1923883.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Very thin Au(Zn) contacts to p-GaAs were studied by means of transmission electron microscopy and secondary ion mass spectrometry. It was found that such contacts when cap annealed became ohmic, even though the reaction between the metallization and GaAs is confined to a very close vicinity of the interface.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 853-856
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ti-Al-N MAX Phase a Candidate for Ohmic Contacts to n-GaN
Autorzy:
Borysiewicz, M.
Kamińska, E.
Piotrowska, A.
Pasternak, I.
Jakieła, R.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1811915.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
68.49.Sf
68.55.ag
81.40.Ef
Opis:
Fabrication of a Ti₂AlN MAX phase for contact applications to GaN-based devices is reported. Sample characterisation was done by means of X-ray diffraction and secondary ion mass spectroscopy. Successful Ti₂AlN monocrystalline growth was observed on GaN and Al₂O₃ substrates by annealing sputter-deposited Ti, Al and TiN layers in Ar flow at 600°C. The phase was not seen to grow when the layers were deposited on Si (111) or when the first layer on the substrate was TiN. N-type GaN samples with Ti₂AlN layers showed ohmic behaviour with contact resistivities in the range 10¯⁴ Ωcm².
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1061-1066
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoconductivity of GaAs Transistors as Detectors of THz Radiation
Autorzy:
Łusakowski, J.
Knap, W.
Kamińska, E.
Piotrowska, A.
Gavrilenko, V.
Powiązania:
https://bibliotekanauki.pl/articles/2035755.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.30.+q
73.61.Ey
Opis:
Magnetotransport characterisation of field effect transistors processed on GaAs/GaAlAs heterostructure was done at 4.2 K for magnetic fields (B) up to 7 T. Three field effect transistors were processed on a single dice and differed by the length (L) of the gate. Electron mobility (μ) in field effect transistors was estimated from dependence of transistor's conductivity vs. B. The results show a decrease inμ with decreasing L that suggests that scattering by edges of the gated part of a transistor limits the electron mobility. Quality factor (Q) of transistors as resonant detectors of THz radiation was calculated. A high value of Q shows that such field effect transistors with sub-micron L are promising devices that can operate at THz frequencies.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
Autorzy:
Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399114.pdf
Data publikacji:
2013-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc
Opis:
In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
Źródło:
Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dual Role of TiN Reaction Barrier in Gold Based Metallization to GaAs
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Adamczewska, J.
Kwiatkowski, S.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/1923915.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Reactively sputtered TiN films were evaluated as annealing cap improving the formation of Au(Zn) ohmic contact and as antidiffusion barrier protecting contact metallization and underlying GaAs against reaction with Au overlayers.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 857-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Direct Measurements of Arsenic and Phosphorus Evolution During Cap-Annealing of Gold-Based Metallizations on GaAs and InP
Autorzy:
Piotrowska, A.
Kamińska, E.
Guziewicz, M.
Veresegyhazy, R.
Mojzes, I.
Pecz, B.
Powiązania:
https://bibliotekanauki.pl/articles/1891383.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ns
Opis:
Evolution of arsenic and phosphorus during heat treatment of unprotected and encapsulated Au, AuZn and AuGeNi contacts on GaAs and InP has been examined and correlated with their ohmic behavior.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 457-460
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO Thin Films Deposited on Sapphire by High Vacuum High Temperature Sputtering
Autorzy:
Borysiewicz, M. A.
Pasternak, I.
Dynowska, E.
Jakieła, R.
Kolkovski, V.
Dużyńska, A.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/2048109.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Cd
61.05.cp
68.37.Hk
68.37.Ps
68.49.Sf
78.55.Et
Opis:
ZnO (0001) layers on sapphire (0001) substrates were fabricated by means of high temperature high vacuum magnetron sputtering. The layers were deposited onto a thin MgO buffer and a low temperature ZnO nucleation layer, which is a technology commonly used in MBE ZnO growth. This paper reports on using this technology in the sputtering regime.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 686-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:
Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 38

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