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Wyświetlanie 1-15 z 20
Tytuł:
Dynamics of the Molecules in Solid Phases of Few Chosen Schiff Bases Compounds
Autorzy:
Bąk, A.
Massalska-Arodź, M.
Powiązania:
https://bibliotekanauki.pl/articles/2037298.pdf
Data publikacji:
2004-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.Md
77.22.Gm
Opis:
The dielectric relaxation processes observed in solid phases of MBBA, OH-MBBA, and EBBA belonging to the homologous series of the Schiff bases are discussed. The data are compared with the results completed by the present authors for EBPA compound. The uniform interpretation of the temperature changes of relaxation for all mentioned compounds is proposed.
Źródło:
Acta Physica Polonica A; 2004, 105, 5; 467-474
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Blocking of Phase Transitions in Liquid Crystal 5*CB (Isopentylcyanobiphenyl) as a Result of Surface Interactions in the Nanomembranes
Autorzy:
Bąk, A.
Chłędowska, K.
Inglot, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402554.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.30.-v
64.70.pp
68.08.-p
77.22.Gm
Opis:
In this paper we present the results of dielectric measurements of liquid crystal (LC) 5*CB arranged in porous matrices with a pore diameter of 100 and 20 nm. We analyse the effect of the surface interactions on the dynamics of the molecules. The results are compared with the results for bulk 5*CB. The most important observation is the blocking of the phase transition of 5*CB into the solid phase in the matrix with pore diameter of 20 nm.
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 147-149
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Molecular Dynamics of n-p-(Ethoxybenzylidene) P-Propylaniline in Nematic and Solid Phases as Studied by Dielectric Relaxation Spectroscopy
Autorzy:
Bąk, A.
Massalska-Arodź, M.
Urban, S.
Powiązania:
https://bibliotekanauki.pl/articles/2012951.pdf
Data publikacji:
2000-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.Md
77.22.Gm
Opis:
The complex dielectric permittivity ε*(ν,T) = ε'(ν,T) - iε''(ν,T) of n-p-(ethoxybenzylidene) p'-propylaniline has been measured in the frequency range from 1 Hz to 13 MHz and temperature range from 360 K to 180 K on heating and on cooling the sample. Dielectric relaxations have been found in nematic and solid phases. A detailed analysis of the observed processes has been performed and the parameters describing molecular dynamics have been evaluated. The comparison of results with those obtained for the other Schiff bases is discussed.
Źródło:
Acta Physica Polonica A; 2000, 97, 2; 323-330
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Cation Substitution in "123"-type Superconducting Oxides on Powder Diffraction Intensities
Autorzy:
Łasocha, W.
Hodorowicz, S. A.
Chodorowicz-Bąk, A.
Eick, H. A.
Powiązania:
https://bibliotekanauki.pl/articles/1920530.pdf
Data publikacji:
1992-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Vy
Opis:
This research was undertaken to determine whether by powder diffraction substitution in the "123"-type high T$\text{}_{c}$ oxides, Ln$\text{}_{1-x}$M$\text{}_{x}$Ba$\text{}_{2-y}$M$\text{}_{y}$Cu$\text{}_{3-z}$M$\text{}_{z}$O$\text{}_{6.5+δ}$ (where Ln = lanthanoid, M$\text{}_{x}$ = Me$\text{}^{3+}$, M$\text{}_{y}$ = Me$\text{}^{3+}$ and M$\text{}_{z}$ = Me$\text{}^{3+}$ and Me$\text{}^{2+}$) could be detected unequivocally. Numerous X-ray and a few neutron powder diffractograms were calculated for substituted compounds. Reflections most sensitive to substitution and the influence of site occupancy for Cu and O atoms are also characterized. The results are compared with some experimental data reported in the literature.
Źródło:
Acta Physica Polonica A; 1992, 81, 3; 397-404
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First-Principles Calculation of He-H Interaction in c-Si
Autorzy:
Gnidenko, A. A.
Zavodinsky, V. G.
Misiuk, A.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/2044684.pdf
Data publikacji:
2006-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.15.Mb
71.55.Cn
Opis:
We used the density functional theory and ab initio pseudopotentials to investigate He-H interaction in crystalline silicon. It was shown that both hydrogen and helium stimulate the formation of vacancy complexes. The presence of hydrogen decreases the vacancy and divacancy formation energies by about 2 eV. The presence of one or two helium atoms reduces the divacancy formation energy by 0.3 and 0.4 eV, respectively. The influence of helium presence on hydrogen diffusion from silicon vacancies under high pressure depends on a helium concentration. Thus, according to our calculation, low concentrations of He increase the hydrogen out-diffusion.
Źródło:
Acta Physica Polonica A; 2006, 109, 3; 353-357
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition and Structure of Czochralski Silicon Implanted with $H_{2}^{+}$ and Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Kulik, M.
Kobzev, A.
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Bak-Misiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1538976.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
61.72.uf
66.10.C-
61.80.Jh
81.20.-n
82.80.Yc
85.40.-e
Opis:
Depth distribution of implanted species and microstructure of oxygen-containing Czochralski grown silicon (Cz-Si) implanted with light ions (such as $H^{+}$) are strongly influenced by hydrostatic pressure applied during the post-implantation treatment. Composition and structure of Si:H prepared by implantation of Cz-Si with $H_{2}^{+}$; fluence D = 1.7 × $10^{17} cm^{-2}$, energy E = 50 keV (projected range of $H_{2}^{+}$, $R_{p}(H)$ = 275 nm), processed at up to 923 K under Ar pressure up to 1.2 GPa for up to 10 h, were investigated by elastic recoil detection Rutherford backscattering methods and the depths distributions of implanted hydrogen and also carbon, oxygen and silicon in the near surface were determined for all samples. The defect structure of Si:H was also investigated by synchrotron diffraction topography at HASYLAB (Germany). High sensitivity to strain associated with small inclusions and dislocation loops was provided by monochromatic (λ = 0.1115 nm) beam topography. High resolution X-ray diffraction was also used.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 332-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal
Autorzy:
Misiuk, A.
Adamczewska, J.
Bąk-Misiuk, J.
Härtwig, J.
Morawski, A.
Witczak, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1890764.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.At
61.70.-r
81.40.-z
Opis:
The effect of hydrostatic pressure on some properties of Cz-Si with oxygen precipitates is investigated. The observed phenomena are discussed in terms of misfit between the precipitates and Si matrix.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 317-320
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of Ternary and Quaternary ZnSe Compounds with Transition Metals by Chemical Vapor Transport
Autorzy:
Janik, E.
Grasza, K.
Mycielski, A.
Bąk-Misiuk, J.
Kachniarz, J.
Powiązania:
https://bibliotekanauki.pl/articles/1929755.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Bk
78.55.Et
Opis:
Halogen transport method was applied to grow the crystals of solid solutions of ZnSe and transition metals at the temperature far below the melting point and phase transition temperature. The large crystals of ZnMnSe, ZnFeSe, ZnNiSe and ZnFeSSe were obtained. The technological parameters and shape of the quartz reactor were chosen for growth of a large crystal by self-nucleation; the transparent quartz furnace enabled the control of nucleation by visual observation. The parameters of crystal growth were determined. The crystal quality was estimated by X-ray diffraction method. The composition of crystals was determined by electron microprobe analysis and energy dispersive X-ray fluorescence analysis.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 785-788
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pressure Variation of the Strain State of MnAs Nanoclusters Embedded in GaAs
Autorzy:
Bak-Misiuk, J.
Dynowska, E.
Romanowski, P.
Misiuk, A.
Sadowski, J.
Caliebe, W.
Powiązania:
https://bibliotekanauki.pl/articles/1431599.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.50.Pp
81.40.Vw
Opis:
Granular GaAs:(Mn,Ga)As films were prepared by annealing at 500°C under ambient and enhanced hydrostatic pressure (1.1 GPa), of $Ga_{1-x}Mn_xAs//GaAs$ layers (x = 0.025, 0.03, 0.04, 0.05 and 0.063) grown at 230°C by molecular beam epitaxy method. Distinct influence of enhanced hydrostatic pressure applied during sample annealing on strain state of inclusions was found. An increase of lattice distortion and of strain of inclusions for the samples treated under hydrostatic pressure is related to different bulk moduli of GaAs and of MnAs
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 903-905
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Changes of GaP: N Defect Structure under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Kozankiewicz, B.
Misiuk, A.
Adamczewska, J.
Skibska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1924323.pdf
Data publikacji:
1993-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
Opis:
The changes of defect structure of GaP:N epitaxial layers subjected to hydrostatic pressures up to 1.8 GPa are investigated by X-ray diffraction and photoluminescence. The observed changes are more pronounced at higher pressures and depend on the nitrogen concentration, c$\text{}_{N}$, and on initial defect structure. Especially complex hydrostatic pressure induced properties are observed for the sample with c$\text{}_{N}$ > 10$\text{}^{20}$ at. cm$\text{}^{-3}$. The model explaining the hydrostatic pressure induced defect structure changes is proposed.
Źródło:
Acta Physica Polonica A; 1993, 83, 1; 87-93
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
PVT-Grown Single Crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe as Substrates for Epitaxy
Autorzy:
Mycielski, A.
Szadkowski, A.
Łusakowska, E.
Kowalczyk, L.
Domagała, J.
Bąk-Misiuk, J.
Wilamowski, Z.
Witkowska, B.
Powiązania:
https://bibliotekanauki.pl/articles/1991957.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.10.Bk
Opis:
The process of growth of single crystals of Cd$\text{}_{1-x}$Zn$\text{}_{x}$Te (x ≤ 0.25) and ZnTe by physical vapour transport has been optimized and the twin-free single crystals with a very good crystal structure and low density of dislocations are grown as substrates for MBE and other techniques of epitaxy. Characterization of the crystals is described.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 441-445
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Structure of Nitrogen Doped Czochralski Silicon Annealed under Enhanced Pressure
Autorzy:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Londos, C.
Andrianakis, A.
Bak-Misiuk, J.
Yang, D.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/1539028.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.72.-y
61.72.Ff
61.72.uf
62.50.-p
Opis:
Defect structure of Czochralski grown silicon (Cz-Si) with nitrogen admixture, c_{N} ≤ 5 × $10^{14} cm^{-3}$ (Cz-Si:N), annealed for up to 10 h at 1270-1400 K under hydrostatic Ar pressure ≤ 1.1 GPa, was investigated by synchrotron diffraction topography (HASYLAB, Germany), X-ray reciprocal space mapping, and infrared spectroscopy. Extended defects were not detected in Cz-Si:N processed at up to 1270 K. Such defects were created, however, in Cz-Si:N pre-annealed at 923 K and next processed at 1270 K or in as-grown Cz-Si:N processed at 1400 K. Investigation of temperature-pressure effects in nitrogen-doped silicon contributes to the understanding of defect formation in Cz-Si:N.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 344-347
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Autorzy:
Misiuk, A.
Wierzchowski, W.
Wieteska, K.
Barcz, A.
Bak-Misiuk, J.
Chow, L.
Vanfleet, R.
Prujszczyk, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504150.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Dd
61.72.uf
64.75.Qr
66.30.Xj
81.40.Xj
Opis:
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using $V^{+}$ doses, D = (1-5) × $10^{15} cm^{-2}$, and energy, E = 200 keV), as implanted and processed for up to 10 h at HT ≤ 1400 K under enhanced hydrostatic pressure, HP ≤ 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of $VSi_2$ are observed at HT ≥ 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of $V^{+}$ and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 196-199
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure
Autorzy:
Misiuk, A.
Bąk-Misiuk, J.
Bryja, L.
Kątcki, J.
Ratajczak, J.
Jun, J.
Surma, B.
Powiązania:
https://bibliotekanauki.pl/articles/2030659.pdf
Data publikacji:
2002-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.72.Yx
81.40.Vw
Opis:
Effect of hydrostatic pressure up to 1.2 GPa on oxygen-implanted silicon, Si:O (O$\text{}^{+}$ dose, D, within the 6×10$\text{}^{17}$-2×10$\text{}^{18}$ cm$\text{}^{-2}$ range), treated at 1230-1570 K, was investigated by X-ray, transmission electron microscopy and photoluminescence methods. The pressure treatment affects oxygen precipitation and defect creation, especially in low oxygen dose implanted Si:O (D=6×10$\text{}^{17}$ cm$\text{}^{-2}$). Such investigation helps in understanding the stress related phenomena in Si wafers with buried insulating layer.
Źródło:
Acta Physica Polonica A; 2002, 101, 5; 719-727
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure
Autorzy:
Bąk-Misiuk, J.
Domagała, J.
Trela, J.
Leszczyński, M.
Misiuk, A.
Härtwig, J.
Prieur, E.
Powiązania:
https://bibliotekanauki.pl/articles/1945264.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.-z
65.70.+y
Opis:
AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment (HP-HT treatment). An influence of HP-HT treatment on the properties of the AlGaAs/GaAs system was studied by lattice parameter measurements using the high resolution diffractometer and by X-ray topography. Observed changes in the lattice parameter of the AlGaAs layers after HP-HT treatment are related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which are visible on the topographs.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 405-409
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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