- Tytuł:
- A model of partially-depleted SOI MOSFETs in the subthreshold range
- Autorzy:
-
Tomaszewski, D.
Łukasiak, L.
Jakubowski, A.
Domański, K. - Powiązania:
- https://bibliotekanauki.pl/articles/308425.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI MOSFET
subthreshold range
floating body
transconductance - Opis:
- A steady-state model of partially-depleted (PD) SOI MOSFETs I-V characteristics in subthreshold range is presented. Phenomena, which must be accounted for in current continuity equation, which is a key equation of the PD SOI MOSFETs model are summarized. A model of diffusion-based conduction in a weakly-inverted channel is described. This model takes into account channel length modulation, drift of carriers in the "pinch-off" region and avalanche multiplication triggered by these carriers. Characteristics of the presented model are shown and briefly discussed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 61-64
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł