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    Wyświetlanie 1-3 z 3
    Tytuł:
    Computer aided design of snubber circuit for DC/DC converter with SiC power MOSFET devices
    Autorzy:
    Niewiara, Ł.
    Skiwski, M.
    Tarczewski, T.
    Grzesiak, L. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/378069.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
    Tematy:
    DC\DC converter
    snubber circuit
    SiC MOSFET
    Opis:
    In this paper a computer aided design of snubber circuit for DC\DC converter is presented. Due to the presence of parasitic LC circuit in the power stage (inductance and capacitance), it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Three types of snubber circuits (C, RC, RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation result. It confirm the proper choice of snubber circuit.
    Źródło:
    Poznan University of Technology Academic Journals. Electrical Engineering; 2015, 84; 77-83
    1897-0737
    Pojawia się w:
    Poznan University of Technology Academic Journals. Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Experimental study of snubber circuit design for SiC power MOSFET devices
    Autorzy:
    Niewiara, Ł. J.
    Skiwski, M.
    Tarczewski, T.
    Grzesiak, L. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/97236.pdf
    Data publikacji:
    2015
    Wydawca:
    Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
    Tematy:
    DC\DC converter
    snubber circuit
    SiC MOSFET
    Opis:
    In this paper a design process of snubber circuit for DC\DC converter is presented. Computer simulation and experimental tests were carried out. Due to the presence of parasitic LC (inductance and capacitance) circuit in the power stage, it is necessary to use an additional snubber circuit for voltage overshoot and oscillations reduction. A simulation model of the converter with parasitic circuit was designed. Six topologies of snubber circuits (C, single C, RC, single RC, RCD, single RCD) were investigated in simulation tests. Simulation model of the proposed system has been investigated in Matlab/Simulink/PLECS environment. Input signal parameters like voltage overshoot, rise time, fall time were compared for considered snubber circuits. Experimental tests were carried out for the best simulation results. It confirm the proper choice of snubber circuit.
    Źródło:
    Computer Applications in Electrical Engineering; 2015, 13; 120-131
    1508-4248
    Pojawia się w:
    Computer Applications in Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of circuit and operation for DC–DC converter based on silicon carbide
    Autorzy:
    Niewiara, Ł. J.
    Tarczewski, T.
    Grzesiak, L. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/97287.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Poznańska. Wydawnictwo Politechniki Poznańskiej
    Tematy:
    DC\DC converter
    SiC MOSFETS
    high switching frequency
    DC–DC converter design
    snubber circuit
    Opis:
    In this paper operating analysis of DC–DC converter is presented. Silicon Carbide based DC–DC converter is investigated. SiC power switches (i.e. MOSFETs and diodes) were used. Synchronous buck topology is applied for converter structure. The DC–DC converter mathematical model is also presented. The parameters of LC circuit were calculated using shown equations. Working conditions determine the values of output LC circuit (inductance and capacitance). Real power semiconductors are equipped in output and input capacitances. This feature may influence the generated input signal. Parasitic capacitances and inductances of the paths causes oscillations and voltage overshoots of the input PWM signal. To avoid such phenomenon, it is necessary to use a snubber circuit. This issue is also presented. The analysis of working conditions is presented for different switching frequencies. The size of passive components (LC) is compared for different operating points. Experimental tests results were presented. Waveforms of voltage and current signals were also shown.
    Źródło:
    Computer Applications in Electrical Engineering; 2016, 14; 268-279
    1508-4248
    Pojawia się w:
    Computer Applications in Electrical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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