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Wyszukujesz frazę "semiconductor crystal" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
A comparative study on the performance of radiation detectors from the HgI2 crystals grown by different techniques
Autorzy:
Martins, J. F. T.
Costa, F. E.
dos Santos, R. A.
de Mesquita, C. H.
Hamada, M. M.
Powiązania:
https://bibliotekanauki.pl/articles/146916.pdf
Data publikacji:
2012
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
crystal growth
iodide mercury crystal
physical vapor transport (PVT)
radiation detector
semiconductor crystal
Opis:
In this work, the establishment of a technology for HgI2 purification and crystal growth is described, aiming at a future application of this crystal as a room temperature radiation semiconductor detector. Two methods of crystal growth were studied in the development of this work: (1) physical vapor transport (PVT) and (2) saturated solution from dimethylsulphoxide (DMSO) complexes. In order to evaluate the crystals obtained using each of these methods, systematic measurements were carried out for determining the stoichiometry, structure, orientation, surface morphology and impurity of the crystal. The influence of these physicochemical properties of the crystals developed was evaluated in terms of their performance as a radiation detector. The best response to radiation was found for the crystals grown by the PVT technique. Significant improvement in the performance of HgI2 radiation detector was found, purifying the crystal by means of two successive growths by the PVT technique.
Źródło:
Nukleonika; 2012, 57, 4; 555-562
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A diode-pumped high-repetition-frequency passively Q-switched Nd:LaMgAl11O19 laser
Autorzy:
Xu, Yan
Gao, Ziye
Xia, Guangqiong
Wu, Zhengmao
Powiązania:
https://bibliotekanauki.pl/articles/1835801.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
Nd:LaMgAl11O19 disordered crystal
Q-switched laser
high pulse repetition frequency
PRF
semiconductor saturable absorber mirror
SESAM
laser diode
LD
Opis:
High-repetition-frequency Q-switched laser is realized through adopting a Nd:LaMgAl11O19 (Nd:LMA) disordered crystal as the gain material, a laser diode lasing at 796 nm as the pumped source, and a semiconductor saturable absorber mirror (SESAM) as the Q-switched device. The out-put characteristics are analyzed under using different transmittance T plane mirrors as an output coupler. Without adopting SESAM, the laser is operating at a CW state, and a relatively high transmittance is helpful for achieving high output power, slope efficiency and light-to-light efficiency. ForT = 7.5% and an absorbed power of 6.17 W, the output power arrives at its maximum of 1160 mW,and the corresponding slope efficiency and light-to-light efficiency are 20.71% and 18.78%, respectively. After introducing SESAM into the cavity, the laser operates at a passively Q-switched state, and the largest slope efficiency is 13.14% under T = 5.0%. Adopting five different output couplers, with the increase of the absorbed power, the pulse repetition frequencies, the pulse energies and the peak powers will ascend while the pulse widths will decline. The observed narrowest pulse width, the maximum pulse repetition frequency, the highest pulse energy and peak power are 1.745 μs, 175.88 kHz, 3.21 μJ and 1.84 W, respectively.
Źródło:
Optica Applicata; 2020, 50, 3; 415-423
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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