- Tytuł:
- Scattering mechanisms in MOS/SOI devices with ultrathin semiconductor layers
- Autorzy:
-
Walczak, J.
Majkusiak, B. - Powiązania:
- https://bibliotekanauki.pl/articles/308021.pdf
- Data publikacji:
- 2004
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
ultrathin SOI
scattering mechanisms
electron mobility - Opis:
- Main scattering mechanisms affecting electron transport in MOS/SOI devices are considered within the quantum-mechanical approach. Electron mobility components (i.e., phonon, Coulomb and interface roughness limited mobilities) are calculated for ultrathin symmetrical DG SOI transistor, employing the relaxation time approximation, and the effective electron mobility is obtained showing possible mobility increase relative to the conventional MOSFET in the range of the active semiconductor layer thickness of about 3 nm.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2004, 1; 39-49
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł