Temat: reactive diffusion - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: The Ni-Al-Hf Multiphase Diffusion
Autorzy:: Romanowska, J.
Wierzba, B.
Markowski, J.
Zagula-Yavorska, M.
Sieniawski, J.
Powiązania:: https://bibliotekanauki.pl/articles/356143.pdf
Data publikacji:: 2016
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: NiAlHf system
reactive diffusion
simulation
aluminide coatings
Opis:: The generalized Darken method was applied to simulate the diffusion between γ-Ni| γ’-Ni₃Al and γ’-Ni₃Al|β-NiAl interfaces. The results of calculations were compared with the experimental concentration’s profiles of nickel, aluminum and hafnium in aluminide and hafnium doped aluminide coatings deposited by the CVD and PVD methods on pure nickel. The method deals with the Wagner’s integral diffusion coefficients and thermodynamic data - activities of components. The experimental results agree with the simulated ones.
Źródło:: Archives of Metallurgy and Materials; 2016, 61, 2A; 587-592
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
Autorzy:: Kalisz, M.
Beck, R. B.
Barcz, A.
Ćwil, M.
Powiązania:: https://bibliotekanauki.pl/articles/308657.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: fluorine
reactive ion etching
silicon fluoride
boron thermal diffusion
fluorocarbon plasma
Opis:: We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 25-29
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: H2O2 production in chloroplasts, its outward diffusion through aquaporins, and the effects of light intensity
Autorzy:: Borisova-Mubarakshina, M.
Kozuleva, M.
Rudenko, N.
Vetoshkina, D.
Naydov, I.
Ivanov, B.
Powiązania:: https://bibliotekanauki.pl/articles/81009.pdf
Data publikacji:: 2013
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: conference
hydrogen peroxide
superoxide radical
chloroplast
diffusion
thylakoid
reactive oxygen species
aquaporin
light intensity
Źródło:: BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology; 2013, 94, 2
0860-7796
Pojawia się w:: BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology
Dostawca treści:: Biblioteka Nauki

Artykuł

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