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    Wyświetlanie 1-11 z 11
    Tytuł:
    Design and analytical calculations of the width and arrangement of quantum well and barrier layers in GaN/AlGaN LED to enhance the performance
    Autorzy:
    Sharma, L.
    Sharma, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2063882.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    barrier
    multi quantum well
    light emitting diode
    power efficiency
    quantum well
    Opis:
    This research paper discusses an analytical approach to designing the active region of light emitting diodes to enhance its performance. The layers in the active region were modified and the effects of changing the width of quantum well and barrier layers in a multi-quantum light emitting diode on the output power and efficiency have been investigated. Also, the ratio of the quantum well width to the B layer width was calculated and proposed in this research paper. The study is carried out on two different LED structures. In the first case (i.e., first structure), the width of the quantum well layers is kept constant while the width of the B layers is varied. In the second case (i.e., second structure), both the quantum well and B layer widths are varied. Based on the simulation results, it has been observed that the LED power efficiency increases considerably for a given quantum well to B layers width ratio without increasing the production complexity. It is also seen that for a desired power efficiency the width of quantum well should be between 0.003 μm and 0.006 μm, and the range of B width (height) should be 2.2 to 6 times the quantum well width. The proposed study is carried out on the GaN-AlGaN-based multi-quantum well LED structure, but this study can be extended to multiple combinations of the semiconductor structures.
    Źródło:
    Opto-Electronics Review; 2021, 29, 4; 141--147
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Grating-free high-x InP/InxGa1-xAs mid-wavelength infrared QWIP focal plane array
    Autorzy:
    Besikci, Cengiz
    Balcı, Saadettin V.
    Tanış, Onur
    Güngör, Oğuz O.
    Arpaguş, Esra S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2204209.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared imaging
    quantum well
    infrared photodetector
    Opis:
    The authors report the characteristics of a diffraction-grating-free mid-wavelength infrared InP/In₀.₈₅Ga₀.₁₅As quantum well infrared photodetector focal plane array with a 640 × 512 format and a 15 µm pitch. Combination of a normal incident radiation sensing ability of the high-x InxGa1-xAs quantum wells with a large gain property of the InP barriers led to a diffraction-grating-free quantum well infrared photodetector focal plane array with characteristics displaying great promise to keep the status of the quantum well infrared photodetector as a robust member of the new generation thermal imaging sensor family. The focal plane array exhibited excellent uniformity with noise equivalent temperature difference nonuniformity as low as 10% and a mean noise equivalent temperature difference below 20 mK with f/2 optics at 78 K in the absence of grating. Elimination of the diffraction-grating and large enough conversion efficiency (as high as ~70% at a -3.5 V bias voltage) abolish the bottlenecks of the quantum well infrared photodetector technology for the new generation very small-pitch focal plane arrays.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144563
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oscillator strength of optical transitions in InGaAsN/GaAsN/GaAs quantum wells
    Autorzy:
    Mika, A
    Sek, G
    Ryczko, K
    Kozub, M
    Musial, A
    Marynski, A
    Misiewicz, J
    Langer, F
    Höfling, S
    Appel, T
    Kamp, M
    Forchel, A
    Powiązania:
    https://bibliotekanauki.pl/articles/173586.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    dilute nitride
    quantum well
    oscillator strength
    Opis:
    Experimental and theoretical considerations and results on the effect of nitrogen incorporation on the oscillator strength of optical transitions in InGaNAs/GaAs quantum wells (QWs) are presented. Therefore, a set of dilute nitride quantum well structures was grown by molecular beam epitaxy. Optical investigation via spectroscopic methods have been performed at various temperatures for both the as-grown samples, and after rapid thermal annealing. The fundamental transition energy and its oscillator strength vs. the QW composition have been systematically investigated. Additionally, the effect of the bandgap discontinuities on the transitions intensity has also been considered. The experimental data have been confronted with the band structure calculations within the effective mass approximation employing a two level repulsion model for the nitrogen-containing structures. The obtained results are crucial for possible future applications employing the quantum well in cavity structures and bringing the practical exploitation of quantum electrodynamics phenomena to the telecommunication spectral range.
    Źródło:
    Optica Applicata; 2013, 43, 1; 53-60
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Overhauser effect and anisotropy of electron spin g-factor in GaAs / AlGaAs quantum wells
    Autorzy:
    Ito, T.
    Shichi, W.
    Ichida, M.
    Gotoh, H.
    Kamada, H.
    Ando, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/385175.pdf
    Data publikacji:
    2009
    Wydawca:
    Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
    Tematy:
    quantum well
    electron spin g-factor
    Overhouser effect
    Opis:
    To investigate the dependence of electron g-factor on magnetic field in GaAs / AlGaAs quantum wells time-resolved photoluminescence measurements under a high magnetic field in different experimental configuration, the magnetic field perpendicular (g up tack ) and parallel (g II) to the quantum confinement direction, has been studied. When the angle between the magnetic field and the confinement direction is 45°, the precession frequency varies depending on polarity of magnetic field and the circular polarization type of excitation light (sigma+ or sigma-). We found that these dependences of the precession frequency exhibit main features of Overhauser effect with an effective magnetic field of 0.5 T that nuclear spins react back on electron spin precession and the g-factor value is not affected by the effective magnetic field. The g+ and gii values agree well with the results of four-band k • p perturbation calculations.
    Źródło:
    Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 105-107
    1897-8649
    2080-2145
    Pojawia się w:
    Journal of Automation Mobile Robotics and Intelligent Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Emission-intensity-enhanced GaN-based LED based on multilayer grating structures
    Autorzy:
    Li, Xin
    Sun, Dejie
    Han, Kun
    Cao, Lijun
    Guo, Shiliang
    Li, Zhiquan
    Powiązania:
    https://bibliotekanauki.pl/articles/2033893.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    light-emitting diode
    surface plasmon
    grating
    quantum well
    Opis:
    A novel surface-plasmon-enhanced GaN-LED is proposed to improve the emission efficiency of the traditional LED. The SiO2 film, Ag triangular structure and ITO film were coated on the rectangularly-patterned p-GaN layer sequentially, which can form the quasi-symmetrical waveguide structure to enhance the internal quantum efficiency and the light extraction efficiency. The COMSOL software is used to simulate the LED structure. The radiated powers, absorbed powers and distribution of electric field are obtained and analyzed. The results reveal that emission efficiency of the proposed GaN-LED can be greatly improved.
    Źródło:
    Optica Applicata; 2021, 51, 4; 529-540
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure
    Autorzy:
    Dyksik, M.
    Motyka, M.
    Rygała, M.
    Pfenning, A.
    Hartmann, F.
    Weih, R.
    Worschech, L.
    Höfling, S.
    Sęk, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1835778.pdf
    Data publikacji:
    2021
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    resonant tunneling diode
    quantum well
    optical spectroscopy
    photoluminescence
    photoreflectance
    Opis:
    We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.
    Źródło:
    Optica Applicata; 2021, 51, 2; 171-180
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical MIDO : Multiple Inputs-Digital Output : device
    Autorzy:
    Alaiz-Gudin, Antonio M.
    González-Marcos, Ana P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2063884.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    distributed feedback laser
    multi quantum well
    optical bistability
    semiconductor laser
    Opis:
    Advances in photonic technologies, with new processes and scopes of photonic integrated circuits, have generated a lot of interest as the field allows to obtain sensors with reduced size and cost and build systems with high interconnectivity and information density. In this work, answering the needs of photonic sensors that must be portable, more energy- efficient, and more accurate than their electrical counterparts, also with a view to the emerging field of neuromorphic photonics, a versatile device is presented. The proposed device makes use of the well-known advantages provided by optical bistability. By combining two distributed feedback-multi quantum well semiconductor laser structures, this new optical multiple inputs - digital output device offers various essential purposes (such as logic gates, wavelength detector and monitoring) with no need for specific manufacturing for each of them. Through a commercial computer-aided design tool, VPIphotonics™, the necessary characterization of proposed device is also described.
    Źródło:
    Opto-Electronics Review; 2021, 29, 4; 106--116
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of Exciton-Polaritons
    Autorzy:
    De Silva, L. M. S.
    Wijewardena Gamalath, K. A. I. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1166216.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AlGaAs/AlAs
    CdSe/ZnS
    Exciton-polaritons
    GaAs
    distributed Bragg reflectors
    microcavity
    quantum well
    Opis:
    To study the generation of exciton polaritons in a quantum well embedded in a semiconductor Fabry-Pérot microcavity with distributed Brag reflectors, a simple semi-classical auxiliary differential equation based model is proposed. The solutions are obtained using FDTD method considering only the excitations from ground to next excited states and one single QW resonance. The simulations are presented for GaAs quantum well in Al0.1Ga0.9As microcavity and a ZnS quantum well embedded in CdSe microcavity with 12 DBR layers on either side. Model is proved to be stable and agrees with properties of polarization associated with polariton dispersion. Results show that GaAs is a better quantum well material to generate polaritons than CdSe.
    Źródło:
    World Scientific News; 2018, 106; 194-213
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The role of quantum-well states and carrier scattering times in discontinuities of opto-electrical characteristics of SCH lasers
    Autorzy:
    Kozioł, Z
    Matukhin, S I
    Buduleva, E A
    Powiązania:
    https://bibliotekanauki.pl/articles/175012.pdf
    Data publikacji:
    2014
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    SCH laser
    quantum well
    heterostructure
    carrier scattering time
    AlGaAs
    discontinuous
    I-V characteristics
    Opis:
    Drift-diffusion computer simulation model available in Synopsys’ Sentaurus TCAD User Guide is used to study electrical and optical characteristics of a separate-confinement heterostructure laser based on AlGaAs. We investigate the role of the width and depth of quantum-well active region, below and above the lasing threshold. The device properties depend on both, the number of bound quantum-well states and on closeness of the highest bound states to conduction or valence band offset. The lasing action may not exist at certain widths or depths of quantum-well, and the threshold current is a discontinuous function of these parameters, at such values of quantum-well width or depth when the highest quantum-well bound states cross conduction or valence band energy offset. The effects are more pronounced at low temperatures. Discontinuities in characteristics are found, at certain conditions, in temperature dependences as well. The carriers scattering time on quantum-well is shown to have a crucial role for the amplitude of discontinuities of these characteristics. The current below the lasing threshold and the threshold current density itself decrease with an increase of quantum-well scattering times and the amplitude of discontinuities decreases then as well.
    Źródło:
    Optica Applicata; 2014, 44, 1; 135-146
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelowanie zjawiska spadku sprawności dla dużych gęstości prądów w diodach elektroluminescencyjnych z azotków
    Modeling of efficiency droop effect in GaN leds
    Autorzy:
    Cegielski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/160001.pdf
    Data publikacji:
    2012
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
    Tematy:
    oświetlenie
    elektroliminescencja
    LED
    GaN
    InGaN
    wewnetrzna sprawność kwantowa
    studnia kwantowa
    rekombinacja
    spadek sprawności
    solid state lighting
    internal quantum efficiency
    quantum well
    recombination
    efficiency droop
    Opis:
    Pomimo rozwoju, który nastąpił w technologii wytwarzania białych elektroluminescencyjnych źródeł światła, w urządzeniach tych ciągle istotną ograniczającą rolę pełni zjawisko spadku sprawności generacji światła dla dużych gęstości prądu. Ponadto wciąż nierozpoznane dostatecznie są jego fizyczne podstawy. W referacie przedstawiono możliwe modele opisujące ten efekt, opierając się na dyskutowanych w literaturze hipotetycznych przyczynach: różnych rodzajach rekombinacji Augera, efektach termicznych, występowaniu silnych pól elektrycznych i asymetrii występowania nośników, itp. Poznanie potencjalnych powodów zjawiska spadku efektywności pozwoli na dalszy rozwój źródeł światła opartych na elektroluminescencji. Przełoży to się na niższy koszt uzyskania zamienników tradycyjnych źródeł światła i większe ich rozpowszechnienie, co w istotny sposób może ograniczyć wzrost światowego zużycia energii.
    Despite the development that occurred in the technology of white Light-Emitting Diodes, this devices are still limited by the phenomenon of the efficiency droop that occurs in light generation for large current densities. Moreover, its physical basis is still not sufficiently recognized. The paper presents possible models describing this effect, based on the hypothetical reasons discussed in the literature: different types of Auger recombination, thermal effects, the presence of strong electric fields and the occurrence of the asymmetry of carriers, etc. Knowing the potential reasons for the droop phenomenon will allow the further development of Solid State Light sources. This leads to lower cost retrofits or replacements of traditional light sources and greater their market penetration, which may significantly reduce global energy consumption increase.
    Źródło:
    Prace Instytutu Elektrotechniki; 2012, 255; 7-18
    0032-6216
    Pojawia się w:
    Prace Instytutu Elektrotechniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mindfulness, Consciousness and Quantum Physics
    Autorzy:
    Di Sia, Paolo
    Powiązania:
    https://bibliotekanauki.pl/articles/1177977.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Consciousness
    Entanglement
    Mind
    Mindfulness
    Quantum Physics
    Retrocausality
    Well-being
    Opis:
    The relation between quantum physics and higher brain functions, including the consciousness, is in recent years a top subject of deep discussions from a scientific, philosophical, psychological and existential point of view. Reality is in continuous motion, life is continuously becoming, a movement of propagating energy waves. The quantum revolution undermined the solid nature of reality, opening the door to the primary role of mind, and proposing scenarios with unexpected features. In this paper interesting aspects of quantum physics are considered, with inevitable repercussions on our lives, which can decisively influence our actions and future. These findings underline the importance of building a cognitive resilience with mindfulness training, for improving the ability to regulate emotions, attention to the true surrounding reality, mood and well-being in life.
    Źródło:
    World Scientific News; 2018, 96; 25-34
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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