Temat: polysilicon - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Grain boundary effect on the anisotropy piezoresistance of laser-recrystallized polysilicon layers in SOI-structures
Autorzy:: Pankov, Y.
Druzhinin, A.
Powiązania:: https://bibliotekanauki.pl/articles/307640.pdf
Data publikacji:: 2001
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SOI
polysilicon layers
MLR
Opis:: A physical model of grain boundary influence on the piezoresistive effect of p-type conductivity of polysilicon layers in SOI-structures is developed. Software calculating piezoresistive properties of boron-doped p-type polysilicon layers has been developed. These properties may be calculated over wide concentration and temperature ranges with anisotropy taken into account and with the average grain size as a parameter. The potential barrier regions around the grain boundaries influence the deformation changes of anisotropy resistance in the fine-grained non-recrystallized SOI-structures doped with boron up to 3ź10(19)cm(-3) only.
Źródło:: Journal of Telecommunications and Information Technology; 2001, 1; 46-48
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Impact of Crosstalk into High Resistivity Silicon Substrate on the RF Performance of SOI MOSFET
Autorzy:: Ali, K. B.
Neve, C. R.
Gharsallah, A.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308378.pdf
Data publikacji:: 2010
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: crosstalk
high resistivity Si
mixing products
passivation layer
polysilicon
Opis:: Crosstalk propagation through silicon substrate is a serious limiting factor on the performance of the RF devices and circuits. In this work, substrate crosstalk into high resistivity silicon substrate is experimentally analyzed and the impact on the RF behavior of silicon-on-insulator (SOI) MOS transistors is discussed. The injection of a 10 V peak-to-peak single tone noise signal at a frequency of 3 MHz ( fnoise) generates two sideband tones of ?56 dBm separated by fnoise from the RF output signal of a partially depleted SOI MOSFET at 1 GHz and 4.1 dBm. The efficiency of the introduction of a trap-rich polysilicon layer located underneath the buried oxide (BOX) of the high resistivity (HR) SOI wafer in the reduction of the sideband noise tones is demonstrated. An equivalent circuit to model and analyze the generation of these sideband noise tones is proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2010, 4; 93-100
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Properties and benefits of fluorine in silicon and silicon-germanium devices
Autorzy:: Ashburn, P.
El Mubarek, H. A. W.
Powiązania:: https://bibliotekanauki.pl/articles/308789.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: bipolar transistor
boron diffusion
fluorine
passivation of interface states
polysilicon emitter
Opis:: This paper reviews the behaviour of fluorine in silicon and silicon-germanium devices. Fluorine is shown to have many beneficial effects in polysilicon emitter bipolar transistors, including higher values of gain, lower emitter resistance, lower 1/f noise and more ideal base characteristics. These results are explained by passivation of trapping states at the polysilicon/silicon interface and accelerated break-up of the interfacial oxide layer. Fluorine is also shown to be extremely effective at suppressing the diffusion of boron, completely suppressing boron transient enhanced diffusion and significantly reducing boron thermal diffusion. The boron thermal diffusion suppression correlates with the appearance of a fluorine peak on the SIMS profile at approximately half the projected range of the fluorine implant, which is attributed to vacancy- fluorine clusters. When applied to bipolar technology, fluorine implantation leads to a record fT of 110 GHz in a silicon bipolar transistor.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 2; 57-63
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: A simple semi-analytical model for the Kink effect for the intrinsic n-channel polysilico thin film transistors
Autorzy:: Siddiqui, M. J.
Qureshi, S.
Alshariff, S. M.
Powiązania:: https://bibliotekanauki.pl/articles/378435.pdf
Data publikacji:: 2007
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:: cienkie warstwy
tranzystory
jonizacja
pole elektryczne
model analityczny
efekt Kinka
polisilikon
thin films
tranzistors
ionization
electric field
analylical model
Kink effect
polysilicon
Opis:: In order to improve the modeling of Polysilicon thin film transistors (Poly-Si-TFTs) a precise evaluation of the excess current due to impact ionization is needed. In this paper we have proposed a simple model for the excess current resulting from the impact ionization occurring at high drain biases. Model is based on the estimation of the electric field in the saturated part of the channel. The electric field in the saturated region is obtained by the solution of the two- dimensional Poisson's equation. The model is semi-analytical and uses only one fitting parameter which is desirable for circuit simulation. The simulation results with the developed impact ionization current model are in excellent agreement with the available experimental output characteristics of the intrinsic n-channel Poly-Si-TFTs.
Źródło:: Electron Technology : Internet Journal; 2007, 39, 1; 1-4
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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