Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "photoluminescence" wg kryterium: Temat

  Lista filtrów
Wyrównaj
Wyświetlanie 1-15 z 27
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Krzysztof
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818197.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Signal processing for time resolved photoluminescence spectroscopy
Autorzy:
Grodecki, Kacper
Murawski, Kkrzysztor
Rutkowski, Jarosław
Kowalewski, Andrzej
Sobieski, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1818200.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
epitaxy
HgCdTe
photoluminescence
time-resolved photoluminescence
Opis:
Accurate determination of material parameters, such as carrier lifetimes and defect activation energy, is a significant problem in the technology of infrared detectors. Among many different techniques, using the time resolved photoluminescence spectroscopy allows to determine the narrow energy gap materials, as well as their time dynamics. In this technique, it is possible to observe time dynamics of all processes in the measured sample as in a streak camera. In this article, the signal processing for the above technique for Hg1-xCdxTe with a composition x of about 0.3 which plays an extremely important role in the mid-infrared is presented. Machine learning algorithms based on the independent components analysis were used to determine components of the analyzed data series. Two different filtering techniques were investigated. In the article, it is shown how to reduce noise using the independent components analysis and what are the advantages, as well as disadvantages, of selected methods of the independent components analysis filtering. The proposed method might allow to distinguish, based on the analysis of photoluminescence spectra, the location of typical defect levels in HgCdTe described in the literature.
Źródło:
Opto-Electronics Review; 2021, 29, 3; 91--96
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron-annihilation and photoluminescence studies of nanostructured ZrO2
Autorzy:
Fidelus, J. D.
Karbowski, A.
Mariazzi, S.
Brusa, R. S.
Karwasz, G.
Powiązania:
https://bibliotekanauki.pl/articles/146313.pdf
Data publikacji:
2010
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
positron annihilation
zirconia nanopowders
photoluminescence
Opis:
In the present work, photoluminescence and Doppler broadening depth-resolved positron annihilation spectroscopy was performed on pure zirconia nanopowders. Zirconia nanopowders were grown by a hydrothermal microwave-driven process followed by annealing in oxygen atmosphere. Photoluminescence under 274 nm wavelength excitation from a 150 W high-pressure Xe exhibits similar spectra, in the region from 320 to 820 nm, although its intensity depends on the annealing. Positron annihilation Doppler-broadening spectra show low values of the normalized S-parameter, varying little with the depth, from 0.495 on the surface to 0.47-0.49 in bulk. Both high the annealing temperature and oxygen concentrations, lead to low bulk S-values. The ortho-positronium (o-Ps) fraction is about 10-11% for all samples on the surface, whereas it is reduced to 7-8% in the bulk for samples annealed at 700°C and 5-6% for samples annealed at 800°C. Both photoluminescence (PL) and positron studies show the presence of defects in all samples. The o-Ps signal suggests a high porosity of samples, particularly at a depth down to 10 nm.
Źródło:
Nukleonika; 2010, 55, 1; 85-89
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Polarization Processes on the Morphology and Photoluminescence Properties of PP/TiO₂ Polymer Nanocomposites
Autorzy:
Ramazanov, M.
Hajiyeva, F.
Maharramov, A.
Hasanova, U.
Ahmadova, A.
Rahimli, A.
Shirinova, H.
Powiązania:
https://bibliotekanauki.pl/articles/1032328.pdf
Data publikacji:
2017-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
photoluminescence
corona discharge
nanocomposites
polypropylene
titanium dioxide
Opis:
The paper reports of synthesis and investigation of polymeric nanocomposites based on isotactic polypropylene and titanium dioxide nanoparticles PP+TiO₂ (PPT). The structure of the PPT nanocomposites was studied by scanning electron and atomic force microscopy. There was also studied the influence of the polarization process by corona discharge on the structure and photoluminescence properties of PPT nanocomposites. It was found that intensity of the photoluminescence after the polarization increases, and this depends on the concentration of titan dioxide nanoparticles in the polymer matrix. It was shown that rms roughness for non-polarized sample compositions is 60-100 nm, whereas for polarized samples after the corona discharge polarization, makes 20-40 nm, i.e. there takes place grinding of the structural elements. It is supposed that, in the composite there forms sufficiently high internal local field, due to the boundary charges, so under the influence of this field there were excited additional luminescent centers, and as a result, after the polarization there was observed the increase of luminescence intensity.
Źródło:
Acta Physica Polonica A; 2017, 131, 6; 1540-1543
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nature of gas sensitivity of dyes on the base of Sn(IV) complexes
Autorzy:
Doycho, Igor K.
Gevelyuk, Sergiy A.
Lepikh, Jaroslav I.
Rysiakiewicz-Pasek, Ewa
Powiązania:
https://bibliotekanauki.pl/articles/173184.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
dyes
porous glass
nanoparticles
photoluminescence
gas sensibility
Opis:
Sensitivity of dyes on the base of 4-valence tin complexes to the composition of environment was researched. It has been found out that such dyes by themselves keep stability and inactivity to the composition of atmosphere. However, the photoluminescence properties of the nanostructures on their base can differ sufficiently depending on conditions of their formation. So the glow intensity of the nanoparticle ensembles of dyes having amine substitute in the hydrazonic fragment depends on the concentration of solution which was used during their formation. Optimal concentration exists and its excess leads to weak luminescence due to concentration quenching. Thus, if the nanoparticle ensemble, which was formed at the optimal concentration will be placed into ammonium atmosphere, it will be equivalent to formation of this ensemble by inflated concentration of the saturated solution. So photoluminescence of such system will be weak. Thereby reduced glow intensity will keep sufficiently long time due to the appearance of leakage channels in the form of bridge bonds. In such manner one can register the presence of ammonium in the environment. Initial intensity of luminescence may be re-established by removing extraneous gas with the aid of the short-time low-temperature anneal. In addition, the ligand in the coordination set of the dye plays a part of an interstitial impurity, so its presence leads to certain distribution of the charges in the system. It has been estimated experimentally that less intensive glow corresponds to the charge distribution in the system with the one-dentant ligand, namely by higher content of chlorine ions than in the case of bi-dentant one. This difference is more evident for dyes having hydroxyl substitute in the hydrazonic fragment. Thus, if the nanoparticle ensemble of such dye having a bi-dentant ligand will be placed into the atmosphere containing hydrogen chloride vapours, it changes the charge distribution to the typical one for the dye having one-dentant ligand artificially. It also will lead to weakening of the glow of the system. Initial intensity of luminescence may be re-established by removing the extraneous gas again with the aid of the anneal by the same conditions. The usage of specified properties makes it possible to construct reliable and responsive detectors of ammonium or hydrogen chloride vapours by the change of the detecting element in the known luminescence gas sensors to the nanoparticle ensemble of an appropriate dye.
Źródło:
Optica Applicata; 2019, 49, 3; 427-436
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of nitrogen in carrier confinement potential engineering and optical properties of GaAs-based quantum wells heterostructures
Autorzy:
Pucicki, D.
Bielak, K.
Dawidowski, W.
Ściana, B.
Tłaczała, M.
Powiązania:
https://bibliotekanauki.pl/articles/174427.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
dilute nitrides
optical properties
carrier confinement
photoluminescence
Opis:
In this work, the authors present the results of optical characterization of GaAs-based multiple quantum well heterostructures, together with energy band structure analysis. The optical properties were investigated by applying photoluminescence spectroscopy. Structures with GaInNAs, GaInAs and GaNAs multiple quantum wells emitting around 1 μm, grown by atmospheric pressure metalorganic vapor phase epitaxy, were compared in this work. The role of nitrogen in quantum well carriers confinement potential was analysed. The photoluminescence intensities of the samples were correlated with the analysis of energy band structures and the overlaps of the carriers’ wave functions. In addition, the main carrier activation energies were estimated based on photoluminescence temperature dependence and the Arrhenius plots analysis. It was deduced that the thermal photoluminescence decay is most probably related to the escape of electrons whereas the holes, independently of the potential well depth, are additionally confined by the local inhomogeneities or by the Coulomb interaction with the confined electrons.
Źródło:
Optica Applicata; 2016, 46, 2; 255-263
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of ZnO and Co Doped ZnO Thin Films Prepared by Sol-Gel
Autorzy:
Khantoul, A.
Sebais, M.
Rahal, B.
Boudine, B.
Halimi, O.
Powiązania:
https://bibliotekanauki.pl/articles/1030548.pdf
Data publikacji:
2018-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
Co doped ZnO
XRD
nanometric size
photoluminescence
Opis:
We report on ZnO films doped with different Co concentrations (0, 0.5, and 1 wt%) prepared by sol-gel technique in association with dip-coating onto glass substrates. Zinc acetate dehydrate, cobalt acetate, mono ethanolamine were used as starting materials, as well as solvent and stabilizer, respectively. Nanostructured polycrystalline ZnO thin films with different concentrations of Co doping (0, 0.5, and 1 wt%) are prepared for the first time by the sol-gel method and annealed at 500°C for 1 h. The surface morphologies of the ZnO thin films deposited on glass substrate with different concentrations were evaluated by atomic force microscopy. The optical absorption of the films showed a blue shift of the band gap. The photoluminescence signal of the thin films of undoped and Co-doped ZnO presents different bands in the visible region. The electrical conductivity of the sample with 0.5%Co was found to be 4.62 (ΩCm)¯¹.
Źródło:
Acta Physica Polonica A; 2018, 133, 1; 114-117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures
Autorzy:
Łozińska, Adriana
Badura, Mikołaj
Jadczak, Joanna
Bielak, Katarzyna
Ściana, Beata
Powiązania:
https://bibliotekanauki.pl/articles/174205.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
QCL core
quantum cascade laser
photoluminescence
Raman spectroscopy
Opis:
In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.
Źródło:
Optica Applicata; 2020, 50, 2; 289-299
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities in optical response of hybrid-barrier GaSb/InAs/AlSb resonant tunneling diode structure
Autorzy:
Dyksik, M.
Motyka, M.
Rygała, M.
Pfenning, A.
Hartmann, F.
Weih, R.
Worschech, L.
Höfling, S.
Sęk, G.
Powiązania:
https://bibliotekanauki.pl/articles/1835778.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
resonant tunneling diode
quantum well
optical spectroscopy
photoluminescence
photoreflectance
Opis:
We present comprehensive investigation of the optical properties of hybrid-barrier GaSb-based resonant tunneling structures, containing a bulk-like GaInAsSb absorption layer and two asymmetric type II GaSb/InAs/AlSb quantum wells. Methods of optical spectroscopy by means of Fourier-transformed photoluminescence and photoreflectance are employed to probe optical transitions in this complex multilayer system. Based on the comparison between the absorption-like and emission-like spectra (also in function of temperature) confronted with band structure calculations four main transitions could be resolved and identified. For one of them, there has been observed unusually strong linear polarization dependence never reported in structures of that kind. It has been interpreted as related to a transition at the GaSb/GaInAsSb interface, for which various scenarios causing the polarization selectivity are discussed.
Źródło:
Optica Applicata; 2021, 51, 2; 171-180
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
HgCdTe energy gap determination from photoluminescence and spectral response measurements
Autorzy:
Murawski, Krzysztof
Kopytko, Małgorzata
Madejczyk, Paweł
Majkowycz, Kinga
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2204344.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
infrared detectors
HgCdTe
photoluminescence
spectral responsivity
semiconductor energy gap
Opis:
The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap. In most of the published reports, the photoluminescence spectrum containing multiple peaks is analyzed using a Gaussian fit to a particular peak. However, the determination of the peak position deviates from the energy gap value. Consequently, it may seem that a blue shift with increasing temperature becomes apparent. In our approach, the main peak was fitted with the expression proportional to the product of the joint density of states and the Boltzmann distribution function. The energy gap determined on this basis coincides in the entire temperature range with the theoretical Hansen dependence for the assumed Cd molar composition of the active layer. In addition, the result coincides well with the bandgap energy determined on the basis of the cut-off wavelength at which the detector response drops to 50% of the peak value.
Źródło:
Metrology and Measurement Systems; 2023, 30, 1; 183--194
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
Autorzy:
Łozińska, Adriana
Badura, Mikołaj
Bielak, Katarzyna
Ściana, Beata
Tłaczała, Marek
Powiązania:
https://bibliotekanauki.pl/articles/174236.pdf
Data publikacji:
2020
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
photoluminescence
quantum cascade lasers
MOVPE
metalorganic vapour phase epitaxy
Opis:
In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.
Źródło:
Optica Applicata; 2020, 50, 2; 251-256
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
Autorzy:
Sypniewska, Małgorzata
Szczesny, Robert
Popielarski, Paweł
Strzałkowski, Karol
Derkowska-Zielinska, Beata
Powiązania:
https://bibliotekanauki.pl/articles/1818231.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
FTIR and Raman spectroscopies
photoluminescence
SEM
XRD
ZnO thin films
Opis:
ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
Źródło:
Opto-Electronics Review; 2020, 28, 4; 182--190
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, morphological and photoluminescent properties of annealed ZnO thin layers obtained by the rapid sol-gel spin-coating method
Autorzy:
Sypniewska, Małgorzata
Szczesny, Robert
Popielarski, Paweł
Strzalkowski, Karol
Derkowska-Zielinska, Beata
Powiązania:
https://bibliotekanauki.pl/articles/1818237.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
FTIR and Raman spectroscopies
photoluminescence
SEM
XRD
ZnO thin films
Opis:
ZnO thin layers were deposited on p-type silicon substrates by the sol-gel spin-coating method and, then, annealed at various temperatures in the range of 573-873 K. Photoluminescence was carried out in the temperature range of 20-300 K. All samples showed two dominant peaks that have UV emissions from 300 nm to 400 nm and visible emissions from 400 nm to 800 nm. Influence of temperature on morphology and chemical composition of fabricated thin layers was examined by XRD, SEM, FTIR, and Raman spectroscopy. These measurements indicate that ZnO structure is obtained for samples annealed at temperatures above 573 K. It means that below this temperature, the obtained thin films are not pure zinc oxide. Thus, annealing temperature significantly affected crystallinity of the thin films.
Źródło:
Opto-Electronics Review; 2020, 28, 4; 182--190
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Imaging methods of detecting defects in photovoltaic solar cells and modules: a survey
Autorzy:
Maziuk, Maurycy
Jasińska, Laura
Domaradzki, Jarosław
Chodasewicz, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/27311747.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
solar cells
defects
photovoltaic cell characterization
defect imaging
electroluminescence
photoluminescence
Opis:
In pursuit of increased efficiency and longer operating times of photovoltaic systems, one may encounter numerous difficulties in the form of defects that occur in both individual solar cells and whole modules. The causes of the occurrence range from structural defects to damage during assembly or, finally, wear and tear of the material due to operation. This article provides an overview of modern imaging methods used to detect various types of defects found in photovoltaic cells and panels. The first part reviews typical defects. The second part of the paper reviews imaging methods with examples of the authors’ own test results. The article concludes with recommendations and tables that provide a kind of comprehensive guide to the methods described, depending on the type of defects detected, the range of applicability, etc. The authors also shared their speculations on current trends and the possible path for further development and research in the field of solar cell defect analysis using imaging.
Źródło:
Metrology and Measurement Systems; 2023, 30, 3; 381--401
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural, morphological and photoluminescent properties of Nd-coated silicon nanostructures
Autorzy:
Mefoued, Amine
Mahmoudi, Bedra
Benrekaa, Nasser
Tiour, Faiza
Menari, Hamid
Naitbouda, Abdelyamine
Manseri, Amar
Brik, Afaf
Mezghiche, Salah
Debbab, Moustafa
Powiązania:
https://bibliotekanauki.pl/articles/2204154.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
silicon nanostructures
silicon nitride
neodymium
SEM/EDS
SIMS
Raman spectroscopy
photoluminescence
Opis:
The structural, morphological and photoluminescent properties of thermally evaporated neodymium oxide (Nd₂O₃) thin films deposited onto nanostructured silicon (Si-ns) are reported. Si-ns embedded in silicon nitride (SiN) thin films are prepared by plasma-enhanced chemical vapour deposition (PECVD). SiN and Nd₂O₃ thin films uniformity and Si-ns formation are confirmed by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The presence of neodymium (Nd), silicon (Si), oxygen (O), and phosphorus (P) is investigated by energy-dispersive spectroscopy (EDS) and secondary ion mass spectrometry (SIMS). Post-annealing SIMS profile indicates an improvement of the homogeneity of activated P distribution in Si bulk. The X-ray diffraction (XRD) combined with Raman spectroscopy and Fourier-transform infrared spectroscopy (FTIR) have been employed to determine amorphous silicon (a-Si), crystalline silicon (c-Si), Nd₂O₃ and SiN phases present in the Nd₂O₃-SiN bilayers with their corresponding chemical bonds. After annealing, a Raman shift toward lower wavenumbers is recorded for the Si peak. XPS data reveal the formation of Nd₂O₃ thin films with Nd-O bonding incorporating trivalent Nd ions (Nd3+). Strong room-temperature photoluminescence is recorded in the visible light range from the Si-ns. Nd-related photoluminescent emission in the near infrared (NIR) range is observed at wavelengths of 1025-1031 nm and 1083 nm, and hence is expected to improve light harvesting of Si-based photovoltaic devices.
Źródło:
Opto-Electronics Review; 2023, 31, 1; art. no. e145096
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 27

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies