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Wyszukujesz frazę "optical thin film" wg kryterium: Temat


Wyświetlanie 1-11 z 11
Tytuł:
Application of Al2O3, ZnO, and TiO2 ALD thin films as antireflection coating in the silicon solar cells
Autorzy:
Szindler, Marek
Szindler, Magdalena
Powiązania:
https://bibliotekanauki.pl/articles/27315697.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
optical thin film
antireflection coating
atomic layer deposition
solar cells
Opis:
The article describes the results of a research on the surface morphology and optical properties of Al₂O₃, ZnO, and TiO₂ thin films deposited by atomic layer deposition (ALD) for applications in silicon solar cells. The surface topography and elemental composition were characterised using a scanning electron microscope, and thickness was determined using an optical reflectometer. The samples were structurally examined using a Raman spectrometer. The structural variant was identified: for Al₂O₃ it is sapphire, for TiO₂ it is anatase, and for ZnO it is wurtzite. Possibilities of minimising light reflection using single and double thin film systems below 5% were presented. For the first time, the effectiveness of these thin films on the current-voltage characteristics and electrical parameters of manufactured silicon solar cells was examined and compared. The solar cell with the highest efficiency of converting solar radiation into electricity was obtained for Al₂O₃/TiO₂ and the efficiency of such a photovoltaic device was 18.74%.
Źródło:
Opto-Electronics Review; 2023, 31, 4; art. no. e148223
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdO thin films Grown by Chemical Spray Pyrolysis and Effect of Substrate type on its Optical Properties
Autorzy:
Abood, Mohmood Muwafaq
Jabbar, Wasmaa Abdulsattar
Daroysh, Hassan Hadi
Qader, Kameran Yasseen
Al-Baidhany, Ismaeel A.
Hussin, Hadi Ahmed
Jasim, Marwah Nasif
Powiązania:
https://bibliotekanauki.pl/articles/1194135.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
CdO
Optical properties
Thin Film
energy gap
Opis:
Cadmium oxide (CdO) thin films were formed by chemical spray pyrolysis technique for different substrate type (glass, quartz, ITO). Absorption spectra were recorded from UV-Visible spectrophotometer in the range of 300-900 nm. The absorbance increased when the glass substrate replaced to quartz or ITO substrate, also this behavior for absorption coefficient and extinction coefficient. While the refractive index tack unstable behavior. The energy gap decreased from 2.4 eV for CdO thin film deposited on glass substrate to 2.36 eV for CdO thin film deposited on ITO substrate.
Źródło:
World Scientific News; 2016, 57; 41-47
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation on the structural, optical and topographical behavior of Cadmium oxide polycrystalline thin films using electrochemical depositing method at different times
Autorzy:
Abd, Ahmed N.
Dawood, Mohammed O.
Hassoni, Majid H.
Hussein, Ali A.
Powiązania:
https://bibliotekanauki.pl/articles/1192094.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Cadmium oxide
thin film
optical characteristics of film
electrochemical depositing method
Opis:
The optical and structure properties of Cadmium oxide (CdO) thin film prepared by electrochemical deposition method at different times (15, 30 and 60) min were investigated in this paper. Results of optical Transmission, absorption, reflection spectra, optical conductance, refractive index, extension coefficient, real and imaginary dielectric constants studies are reported. The optical transmittance of the CdO thin film which formed at room temperature was 20% at wavelength ≈350 nm then increases to 60% at wavelength ≈1100 nm for thin film of CdO. The band-gap was also calculated from the equation relating absorption coefficient with the wavelength. The energy band gap changes from 2.3eV (Bulk CdO) to 2.45eV (CdO thin film). The plotted graphs show the optical characteristics of the film which varied with the wavelength and the photon energy. The optical conductance and band-gap indicated that the film is transmitting within the visible range. The dielectric constant and optical conductance of the film initially decreases slowly with increase in photon energy. The extinction coefficient and refractive index of the films also evaluated, which affected with the change in transmittance. The structure of synthesised CdO thin film was analyzed by X-ray diffraction XRD which revealed that the CdO thin film are polycrystalline and have several peaks of cubic face structure. The crystallite size, dislocation density, microstrain and number of dislocations of the thin film were calculated and listed.
Źródło:
World Scientific News; 2016, 37; 249-264
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Gamma Irradiation on the Optical Properties of Mg doped CdO Thin films deposited by Spray Pyrolysis
Autorzy:
Hassouni, M.H.
Mishjil, K.A.
Chiad, S.S.
Habubi, N.F.
Powiązania:
https://bibliotekanauki.pl/articles/412503.pdf
Data publikacji:
2013
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
TCOs
thin films
optical properties
doping film
gamma radiation
Opis:
Thin films of CdO and 9 % Mg doped CdO doped have been prepared using spray pyrolysis technique. Transmission and absorption spectra were recorded in order to estimate these films. The deposited thin films were exposed to γ - rays. We have studied the transmission, absorptions and absorption coefficient as a function of photon energy before and after irradiation. The optical constants such as: reflectance, extinction coefficient, refractive index, real and imaginary parts of the dielectric constant and the electrical conductivity were calculated also.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2013, 11; 26-37
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of pH on the Structural and Optical Properties of Polycrystalline MnTe₂ Thin Films Produced by Chemical Bath Deposition Method
Autorzy:
Kariper, İ.
Göde, F.
Powiązania:
https://bibliotekanauki.pl/articles/1031481.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
X-ray diffraction
thin film
optical constant
growth from solutions
Opis:
Polycrystalline manganese ditelluride (MnTe₂) thin films are synthesized on commercial glass substrates by chemical bath deposition technique at different pH values (pH = 9, 10, 11 and 12). The effect of pH on the structural and optical properties of chemically deposited MnTe₂ thin films have been investigated in this study. The structure and optical properties of the films are characterized by X-ray diffraction and optical absorption spectroscopy. The X-ray diffraction results suggest that the films are polycrystalline with a mixture of dominant cubic MnTe₂ phase and few traces of orthorhombic MnTeO₃ and MnTe₂O₅ phases. The optical band gap of the films increases approximately from 1.66 eV to 2.62 eV with increasing pH. Moreover, optical parameters of the films such as refractive index, extinction coefficient, real and imaginary dielectric constants are investigated using absorption and transmittance spectra taken from the UV-vis spectrophotometer. At 600 nm wavelength, refractive index and extinction coefficient values vary in the range of 1.39-1.55 and 0.17-0.23, respectively. An increase in optical band gap could be attributed to the quantum confinement effect.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 531-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition
Autorzy:
Göde, F.
Kariper, İ.
Güneri, E.
Ünlü, S.
Powiązania:
https://bibliotekanauki.pl/articles/1031534.pdf
Data publikacji:
2017-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
scanning electron microscopy
thin film
optical constant
growth from solutions
Opis:
Indium sulfide (β-In₂S₃) thin films are synthesized by chemical bath deposition method using three different complexing agent volumes, triethanolamine (TEA) (0.30, 0.45, and 0.60 ml). The effect of complexing agent on the structural, morphological, optical and electrical properties of chemically deposited indium sulfide (β-In₂S₃) thin films have been investigated in this work. The characterization of the present films is carried out using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and electrical measurements. The structure of the films is polycrystalline with a cubic phase of β-In₂S₃. Firstly, the band gap of the film decreases from 3.74 eV to 3.15 eV by adding 0.30 ml TEA. Then, it increases to 3.79 eV with increasing TEA. Nevertheless, previously, the refractive index of the films increases from 2.13 to 2.67 for the 0.30 mL TEA and then it decreases to the value of 2.11 with increasing TEA. Extinction coefficient, real and dielectric constant of the films are calculated using the absorption and transmittance spectra. Firstly, the electrical resistivity of the films decreases from 3.46×10⁸ Ω cm to 1.33×10⁷ Ω cm by adding 0.30 ml TEA. Then, it increases to the value of 2.16×10⁹ Ω cm with increasing TEA. Eventually, the more conductive film with worm-like morphology detected from the scanning electron microscopy is synthesized using 0.30 ml TEA. These results show that complexing agent has an important effect on the structural, morphological, optical and electrical properties of the deposited films.
Źródło:
Acta Physica Polonica A; 2017, 132, 3; 527-530
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Improvement Optical and Electrical Characteristics of Thin Film Solar Cells Using Nanotechnology Techniques
Autorzy:
Thabet, Ahmed
Abdelhady, Safaa
Ebnalwaled, A.A.
Ibrahim, A. A.
Powiązania:
https://bibliotekanauki.pl/articles/226062.pdf
Data publikacji:
2019
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
thin film
nanoparticles
nanocomposites
energy conversion
optical
plasmonic
solar cells
Opis:
This work presents a theoretical study for the distribution of nanocomposite structure of plasmonic thin-film solar cells through the absorber layers. It can be reduced the material consumption and the cost of solar cell. Adding nanometallic fillers in the absorber layer has been improved optical, electrical characteristics and efficiency of traditional thin film solar cells (ITO /CdS/PbS/Al and SnO2/CdS/CdTe/Cu) models that using sub micro absorber layer. Also, this paper explains analysis of J-V, P-V and external quantum efficiency characteristics for nanocomposites thin film solar cell performance. Also, this paper presents the effect of increasing the concentration of nanofillers on the absorption, energy band gap and electron-hole generation rate of absorber layers and the effect of volume fraction on the energy conversion efficiency, fill factor, space charge region of the nanocomposites solar cells.
Źródło:
International Journal of Electronics and Telecommunications; 2019, 65, 4; 625-634
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microstructural Studies of Ag/TiO2 Thin Film; Effect of Annealing Temperature
Autorzy:
Kamrosni, Abdul Razak
Dewi Suryani, Che Halin
Azliza, Azani
Mohd Mustafa Al Bakri, Abdullah
Mohd Arif Anuar, Mohd Salleh
Norsuria, Mahmed
Chobpattana, Varistha
Kaczmarek, L.
Jeż, Bartłomiej
Nabiałek, Marcin
Powiązania:
https://bibliotekanauki.pl/articles/2048839.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Ag/TiO2
annealing temperature
microstructure
optical properties
thin film
Opis:
Microstructures are an important link between materials processing and performance, and microstructure control is essential for any materials processing route where the microstructure plays a major role in determining the properties. In this work, silverdoped titanium dioxide (Ag/TiO2) thin film was prepared by the sol-gel method through the hydrolysis of titanium tetra-isopropoxide and silver nitrate solution. The sol was spin coated on ITO glass substrate to get uniform film followed by annealing process for 2 hours. The obtained films were annealed at different annealing temperatures in the range of 300°C-600°C in order to observe the effect on crystalline state, microstructures and optical properties of Ag/TiO2 thin film. The thin films were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), and UV-Vis spectrophotometry. It is clearly seen, when the annealing temperature increases to 500°C, a peak at 2θ = 25.30° can be seen which refers to the structure of TiO2 tetragonal anatase. The structure of Ag/TiO2 thin film become denser, linked together, porous and uniformly distributed on the surface and displays the highest cut-off wavelength value which is 396 nm with the lowest band gap value, which is 3.10 eV.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 1; 241-245
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear optics of the thin-film quasiwaveguide amplifier: applications to directional switching in the optical communication systems
Autorzy:
Djotyan, G.P.
Arutunyan, V.M.
Bakos, J.S.
Sörlei, Z.
Powiązania:
https://bibliotekanauki.pl/articles/308725.pdf
Data publikacji:
2000
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
thin-film laser
directoral switching
four-wave mixing
optical communication systems
Opis:
We examine nonlinear optical effects in the active medium of the thin-film quasiwaveguide amplifier-oscillator with injection of the external signal. The injection locking has been obtained in the case when both the frequency and the direction of propagation of the injected signal differ from those for a free-running thin-film laser which offers a possibility for the frequency and directional switching of the output of the thin-film laser. The effects of four wave mixing and phase conjugation have been discussed in the active medium of the thin-film laser when additional mirrors forming an external resonator have been used.
Źródło:
Journal of Telecommunications and Information Technology; 2000, 1-2; 20-23
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor
Autorzy:
Mazur, M.
Domaradzki, J.
Wojcieszak, D.
Powiązania:
https://bibliotekanauki.pl/articles/201406.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Transparent Oxide Semiconductor
Transparent Electronics
(Ti-V)Ox thin film
magnetron sputtering
optical and electrical properties
Opis:
In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 105 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 3; 583-594
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of a back side dielectric mirror on thin film silicon solar cells performance
Autorzy:
Cieslak, Krystian
Fave, Alain
Lemiti, Mustapha
Powiązania:
https://bibliotekanauki.pl/articles/174381.pdf
Data publikacji:
2019
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
thin film silicon solar cells
back side emitter
back side mirror
vapor phase epitaxy
Bragg mirror
IMD optical properties simulation
Opis:
Back side p+ emitter thin silicon solar cells have been constructed using vapor phase epitaxy. Double porous structure on a c-Si substrate was used as a seed substrate in order to enable active layer separation after vapor phase epitaxy growth. Structure of the back side emitter solar cell was obtained in situ during the epitaxy process. In order to enhance solar cell response to light from a range of 700–1200 nm wavelength, the back side dielectric mirror was developed and optimized by means of a computer simulation and deposited by plasma enhanced chemical vapor deposition. At the same time, a reference sample was fabricated. Comparison of solar cells performance with or without the back side mirror was performed and clearly shows that the quality of solar light conversion into the electricity by means of solar cells, can be improved by using the structure proposed in this article.
Źródło:
Optica Applicata; 2019, 49, 1; 151-159
0078-5466
1899-7015
Pojawia się w:
Optica Applicata
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-11 z 11

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