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    Wyświetlanie 1-11 z 11
    Tytuł:
    Surface treatment of GaSb and related materials for the processing of mid-infrared semiconductor devices
    Autorzy:
    Papis-Polakowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/378417.pdf
    Data publikacji:
    2006
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
    Tematy:
    semiconductor devices
    mid-infrared wavelenth range
    GaSb
    Opis:
    Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.
    Źródło:
    Electron Technology : Internet Journal; 2005-2006, 37/38, 4; 1-34
    1897-2381
    Pojawia się w:
    Electron Technology : Internet Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Material parameters of antimonides and amorphous materials for modelling the mid-infrared lasers
    Autorzy:
    Piskorski, Ł.
    Sarzała, R. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/175109.pdf
    Data publikacji:
    2016
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    material parameters
    computer simulation
    mid-infrared devices
    GaSb-based lasers
    Opis:
    The proper modelling of semiconductor device operation with full complexity of many interrelated physical phenomena taking place within its volume is possible only when the material parameters which appear in each part of the self-consistent model are known. Therefore, it is necessary to include in calculations the material composition, temperature, carrier concentration, and wavelength dependences in electrical, thermal, recombination and optical models. In this work we present a complete set of material parameters which we obtained basing mostly on the experimental data found in several dozen publications. To refine the number of equations, we restrict the material list to those which are typically used in edge-emitting lasers and vertical-cavity surface-emitting lasers designed for mid-infrared emission.
    Źródło:
    Optica Applicata; 2016, 46, 2; 227-240
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Efficient Algorithm for Steady State Analysis of Fibre Lasers Operating under Cascade Pumping Scheme
    Autorzy:
    Sujecki, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/227007.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    photonics
    fibre lasers
    optical fiber technology
    mid infrared light technology
    numerical modeling
    Opis:
    We derive an efficient algorithm for the steady state analysis of fibre lasers operating under cascade pumping scheme by combining the shooting method with the Newton-Raphson method. We compare the proposed algorithm with the two standard algorithms that have been used so far in the available literature: the relaxation method and the coupled solution method. The results obtained show that the proposed shooting method based algorithm achieves much faster convergence rate at the expense of a moderate increase in the calculation time. It is found that a further improvement in the computational efficiency can be achieved by using few iterations of the relaxation method to calculate the initial guess for the proposed shooting method based algorithm.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 2; 143-149
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    GaInNAs quantum-well vertical-cavity surface-emitting lasers emitting at 2.33 μm
    Autorzy:
    Piskorski, Ł.
    Sarzała, R. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/199958.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    simulation of a diode-laser operation
    QW VCSELs
    mid-infrared radiation
    dilute nitrides
    Opis:
    In the present paper, the comprehensive fully self-consistent optical-electrical-thermal-recombination model is used to determine the optimal structure of the possible GaInNAs quantum-well (QW) tunnel-junction (TJ) vertical-cavity surface-emitting lasers (VCSELs) with single-fundamental-mode operation at 2.33 μm wavelength suited for carbon monoxide sensing applications. From among various considered structures, the diode laser with 4-μm TJ and two 6-nm Ga0.15In0.85N0.015As0.985/Ga0.327In0.673As0.71P0.29 QWs has the lowest threshold current and seems to be optimal for the above applications. Higher threshold currents are obtained for Ga0.15In0.85N0.015As0.985/Al0.138 -Ga0.332In0.530As QW structures but the latter can be grown in reactors without P source which are used for fabrication of GaAs-based devices. Both the modelled VCSELs offer a very promising room temperature continuous wave performance and may represent an alternative choice to GaSb-based lasers.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 737-744
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Picosecond mode-locked tm-doped fibre laser and amplifier system providing over 20 W of average output power at 1994 nm
    Autorzy:
    Grześ, P.
    Michalska, M.
    Świderski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/220559.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    pulsed fibre lasers and amplifiers
    mid-infrared
    mode-locked lasers
    thulium-doped fibres
    Opis:
    A mode-locked Tm3+-doped fibre laser and amplifier operating at a central wavelength of 1994.3 nm is demonstrated. A thulium oscillator is passively mode-locked by a semiconductor saturable absorber mirror to generate an average power of 17 mW at a fundamental repetition rate of 81 MHz in a short linear cavity. This 2-μm laser train is amplified to an average power to 20.26 W by two double-clad thulium-doped all-fibre amplifiers. The pulse energy, duration and peak power is 250 nJ, 23 ps and 9.57 kW, respectively. This represents one of the highest values of average power at ~2-μm-wavelength for picosecond thulium-doped fibre lasers and amplifiers. The performance of the laser system is described in details.
    Źródło:
    Metrology and Measurement Systems; 2018, 25, 4; 649-658
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparative analysis of GaAs- and GaSb-based active regions emitting in the mid-infrared wavelength range
    Autorzy:
    Piskorski, Ł.
    Frasunkiewicz, L.
    Sarzała, R. P.
    Powiązania:
    https://bibliotekanauki.pl/articles/200684.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    strained QWs
    GaInNAs
    GaInAsSb
    mid-infrared radiation
    numerical analysis
    napięte konstrukcje QWs
    analiza numeryczna
    Opis:
    In the present paper the results of the computer analysis of the GaAs-based and GaSb-based active regions that can be applied in compact semiconductor laser sources of radiation at mid-infrared wavelengths are presented. Quantum well material contents and strain dependencies on the maximal gain are investigated. It is shown that above 3 μm the maximal gain obtained for GaInNAs/AlGaInAs active region is high only for thick, highly-strained GaInNAs QWs with N concentration higher than 2%. Much higher gain in this wavelength range can be obtained for GaInAsSb/AlGaAsSb active region, which offers relatively high gain even at 4.5 μm when the Sb content in GaInAsSb and compressive strain in this layer are equal to 50% and − 2%, respectively.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 3; 597-603
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mid-infrared polarization beam splitter based on square/circular hybrid air holes with wide bandwidth and ultrashort length
    Autorzy:
    Zheng, Guang-Ming
    Powiązania:
    https://bibliotekanauki.pl/articles/2172822.pdf
    Data publikacji:
    2022
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    polarization beam splitter
    mid-infrared
    photonic crystal fibre
    bandwidth
    square air hole
    circular air hole
    Opis:
    A novel mid-infrared polarization beam splitter (PBS) based on GaS is proposed. The high birefringence is achieved by using the cladding structure of alternating arrangement of square and circular air holes as well as introducing double elliptical air holes. The finite element method (FEM) is utilized to investigate the mode coupling characteristics in the proposed PBS. The results show that the highest extinction ratio of 115 dB and shortest length of only 40 μm can be realized at a wavelength of 4 μm. A wide bandwidth of 200 nm ranging from 3.9 to 4.1 μm is obtained.
    Źródło:
    Optica Applicata; 2022, 52, 3; 345--358
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Discussion around IR material and structure issues to go toward high performance small pixel pitch IR HOT FPAs
    Autorzy:
    Gravrand, Olivier
    Baier, Nicolas
    Ferron, Alexandre
    Rochette, Florent
    Lobre, Clément
    Bertoz, Jocelyn
    Rubaldo, Laurent
    Powiązania:
    https://bibliotekanauki.pl/articles/2204207.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    mid-wave infrared
    focal plane array
    high operating temperature
    small pitch
    modulation transfer function
    finite element method
    Opis:
    In the last decade, infrared imaging detectors trend has gone for smaller pixels and larger formats. Most of the time, this scaling is carried out at a given total sensitive area for a single focal plane array. As an example, QVGA 30 μm pitch and VGA 15 μm pitch exhibit exactly the same sensitive area. SXGA 10 μm pitch tends to be very similar, as well. This increase in format is beneficial to image resolution. However, this scaling to even smaller pixels raises questions because the pixel size becomes similar to the IR wavelength, but also to the typical transport dimensions in the absorbing material. Hence, maintaining resolution for such small pixel pitches requires a good control of the modulation transfer function and quantum efficiency of the array, while reducing the pixel size. This might not be obtained just by scaling the pixel dimensions. As an example, bulk planar structures suffer from excessive lateral diffusion length inducing pixel-to-pixel cross talk and thus degrading the modulation transfer function. Transport anisotropy in some type II superlattice structures might also be an issue for the diffusion modulation transfer function. On the other side, mesa structures might minimize cross talk by physically separating pixels, but also tend to degrade the quantum efficiency due to a non-negligible pixel fill factor shrinking down the pixel size. This paper discusses those issues, taking into account different material systems and structures, in the perspective of the expected future pixel pitch infrared focal plane arrays.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144561
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sensor performance and cut-off wavelength tradeoffs of III-V focal plane arrays
    Autorzy:
    James, Jonathan Ch.
    Haran, Terence L.
    Lane, Sarah E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2204205.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared focal plane arrays
    III-V semiconductor infrared detector technologies
    infrared sensor performance modelling
    infrared sensor design
    mid-wave and longwave infrared sensors
    Opis:
    Infrared detector technologies engineered from III-V semiconductors such as strained-layer superlattice, quantum well infrared photodetectors, and quantum dot infrared photodetectors provide additional flexibility to engineer bandgap or spectral response cut-offs compared to the historical high-performance detector technology of mercury/cadmium/telluride. The choice of detector cut-off depends upon the sensing application for which the system engineer is attempting to maximize performance within an expected ensemble of operational scenarios that define objects or targets to be detected against specific environmental backgrounds and atmospheric conditions. Sensor performance is typically characterised via one or more metrics that can be modelled or measured experimentally. In this paper, the authors will explore the impact of detector cut-off wavelength with respect to different performance metrics such as noise equivalent temperature difference and expected target detection or identification ranges using analytical models developed for several representative sensing applications encompassing a variety of terrestrial atmospheric conditions in the mid-wave and long-wave infrared wavelength bands. The authors will also report on their review of recently published literature concerning the relationships between cut-off wavelength and the other detector performance characteristics such as quantum efficiency or dark current for a variety of detector technologies.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144570
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Zastosowanie spektroskopii oscylacyjnej w zakresie nir do śledzenia modyfikacji konformacyjnych zachodzących w hydrofobowym obszarze modelowych dwuwarstw lipidowych
    Application of nir range vibrational spectroskopy to follow the conformational modifications occuring in the hydrophobic region of model lipid bilayers
    Autorzy:
    Kuć, Marta
    Cieślik-Boczula, Katarzyna
    Rospenk, Maria
    Powiązania:
    https://bibliotekanauki.pl/articles/27310038.pdf
    Data publikacji:
    2023
    Wydawca:
    Polskie Towarzystwo Chemiczne
    Tematy:
    dwuwarstwa lipidowa
    liposom
    główne przejście fazowe
    spektroskopia oscylacyjna w zakresie średniej podczerwieni (MIR)
    spektroskopia oscylacyjna w zakresie bliskiej podczerwieni (NIR)
    Analiza Składników Głównych (PCA)
    lipid bilayer
    liposome
    main phase transition
    Mid-infrared vibrational spectroscopy (MIR)
    Near-infrared vibrational spectroscopy (NIR)
    Principal Component Analysis (PCA)
    Opis:
    Biomembranes, which are the structural and functional basis of the cells of all living organisms, have been an extremely interesting research object for biology and chemistry scientists for years. The multitude of elements constituting the components of natural lipid membranes, however, is associated with interpretation difficulties regarding the nature of the processes taking place in them. A useful research object that is a model of bilamellar biosystems with a significantly simplified composition and at the same time retaining properties that can be a reference point in relation to natural membranes are lipid membranes in the form of one or several component liposomes. It is precisely such systems built of molecules of dipalmitoyl phosphatidylcholine (DPPC) or dipalmitoyl phosphatidylglycerol (DPPG), and analogous systems with the addition of cholesterol (Chol), that were the subject of research in this work. Near-infrared (NIR) vibrational spectroscopy provides a suitable method for the study of the hydrated samples. In most cases it can be alternatively adopted instead of commonly used mid-infrared (MIR) vibrational spectroscopy. This technique was applied for the first time to identify the spectral changes associated with the conformational changes in the hydrophobic region of model lipid bilayers. Trans/gauche isomerization of CH2 groups of lipid hydrocarbon chains is accompanied by characteristic changes in spectral parameters of both νas,s CH2 bands and their first overtones (2νas,s CH2). The heating of all types of analyzed liposomes results in main phase transition (Tm) accompanied by trans to gauche isomerization of CH2 groups of lipid hydrocarbon chains. The NIR-spectroscopy was able to describe in proper way (similar to MIR results) the character of Tm in studied bilayers.
    Źródło:
    Wiadomości Chemiczne; 2023, 77, 7-8; 647--686
    0043-5104
    2300-0295
    Pojawia się w:
    Wiadomości Chemiczne
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigations of microstructure and phase transformations of Fe71.25Si9.5B14.25In5 alloy
    Badania mikrostruktury i przemian fazowych w stopie Fe71,25Si9,5B14,25In5
    Autorzy:
    Wojciechowska, M.
    Ziewiec, K.
    Ferenc, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/264182.pdf
    Data publikacji:
    2017
    Wydawca:
    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
    Tematy:
    amorphous/crystalline composites
    mid wave infrared camera
    scanning electron microscope (SEM)
    differential thermal analysis (DTA)
    kompozyt amorficzno-krystaliczny
    kamera termowizyjna średniej podczerwieni
    skaningowa mikroskopia elektronowa (SEM)
    termiczna analiza różnicowa (DTA)
    Opis:
    The aim of this work was to study the microstructure and high-temperature phase transformations of the Fe71.25Si9.5B14.25In5 alloy. The alloy was remelted in a resistance furnace, and a sequence of melting and crystallization at a range of high temperatures was observed using a mid-wave infrared MWIR camera. The alloy was also investigated by differential thermal analysis (DTA). The microstructure of the alloy was studied using a scanning electron microscope SEM with an energy dispersive spectrometer (EDS). The results show that there is a clear partition into two liquids in the studied alloy. The ingot microstructure presents very strong segregation into the eutectic regions enriched in the Fe-Si-B and In-rich regions.
    Celem pracy było zbadanie mikrostruktury oraz wysokotemperaturowych przemian fazowych zachodzących w stopie Fe71,25Si9,5B14,25In5. Proces przetapiania oraz krystalizacji stopu w piecu oporowym został zarejestrowany za pomocą kamery termowizyjnej pracującej w zakresie średniofalowej podczerwieni. Wykonano również różnicową analizę termiczną DTA badanego stopu. Mikrostrukturę zbadano przy użyciu skaningowego mikroskopu elektronowego SEM wyposażonego w spektrometr energii rozproszonej EDS. Wyniki wykazują, że w badanym stopie zachodzi wyraźny podział na dwie ciecze. Mikrostruktura wlewka zawiera składnik eutektyczny bogaty w Fe, Si i B oraz fazę wzbogaconą w In.
    Źródło:
    Metallurgy and Foundry Engineering; 2017, 43, 1; 67-72
    1230-2325
    2300-8377
    Pojawia się w:
    Metallurgy and Foundry Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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