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    Wyświetlanie 1-5 z 5
    Tytuł:
    Characteristics of Carbide Interfacial Layer Formed During Deposition of DLC Films on 316L Stainless Steel Substrate
    Autorzy:
    Dudek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/354300.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    RF PECVD
    carbon films
    diamond like carbon film
    film growth
    carbides formation
    Opis:
    The paper presents the analysis of formation of interfacial layer during deposition of diamond like carbon film (DLC) on the 316L stainless steel by capacitive plasma discharge in the CH4 atmosphere. The structure of the interfacial layer of DLC film was strongly affected by the temperature increase during the initial stages of the process. Initially, thin interfacial layer of 5 nm has been formed. As the temperature had reached 210°C, the second phase of the process was marked by the onset of carbon atoms diffusion into the steel and by the interface thickness increase. Finally, the growth of chromium carbide interface, the upward diffusion of chromium and nickel atoms to film, the etching and the decrease of the DLC film thickness were observed at 233°C. These investigations were carried out ex-situ by spectroscopic ellipsometry, X-ray diffraction, X-ray photoelectron spectroscopy and Raman spectroscopy.
    Źródło:
    Archives of Metallurgy and Materials; 2017, 62, 4; 2211-2216
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of pH on the Structural and Optical Properties of Polycrystalline MnTe₂ Thin Films Produced by Chemical Bath Deposition Method
    Autorzy:
    Kariper, İ.
    Göde, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1031481.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    X-ray diffraction
    thin film
    optical constant
    growth from solutions
    Opis:
    Polycrystalline manganese ditelluride (MnTe₂) thin films are synthesized on commercial glass substrates by chemical bath deposition technique at different pH values (pH = 9, 10, 11 and 12). The effect of pH on the structural and optical properties of chemically deposited MnTe₂ thin films have been investigated in this study. The structure and optical properties of the films are characterized by X-ray diffraction and optical absorption spectroscopy. The X-ray diffraction results suggest that the films are polycrystalline with a mixture of dominant cubic MnTe₂ phase and few traces of orthorhombic MnTeO₃ and MnTe₂O₅ phases. The optical band gap of the films increases approximately from 1.66 eV to 2.62 eV with increasing pH. Moreover, optical parameters of the films such as refractive index, extinction coefficient, real and imaginary dielectric constants are investigated using absorption and transmittance spectra taken from the UV-vis spectrophotometer. At 600 nm wavelength, refractive index and extinction coefficient values vary in the range of 1.39-1.55 and 0.17-0.23, respectively. An increase in optical band gap could be attributed to the quantum confinement effect.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 531-534
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition
    Autorzy:
    Göde, F.
    Kariper, İ.
    Güneri, E.
    Ünlü, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1031534.pdf
    Data publikacji:
    2017-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    scanning electron microscopy
    thin film
    optical constant
    growth from solutions
    Opis:
    Indium sulfide (β-In₂S₃) thin films are synthesized by chemical bath deposition method using three different complexing agent volumes, triethanolamine (TEA) (0.30, 0.45, and 0.60 ml). The effect of complexing agent on the structural, morphological, optical and electrical properties of chemically deposited indium sulfide (β-In₂S₃) thin films have been investigated in this work. The characterization of the present films is carried out using X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and electrical measurements. The structure of the films is polycrystalline with a cubic phase of β-In₂S₃. Firstly, the band gap of the film decreases from 3.74 eV to 3.15 eV by adding 0.30 ml TEA. Then, it increases to 3.79 eV with increasing TEA. Nevertheless, previously, the refractive index of the films increases from 2.13 to 2.67 for the 0.30 mL TEA and then it decreases to the value of 2.11 with increasing TEA. Extinction coefficient, real and dielectric constant of the films are calculated using the absorption and transmittance spectra. Firstly, the electrical resistivity of the films decreases from 3.46×10⁸ Ω cm to 1.33×10⁷ Ω cm by adding 0.30 ml TEA. Then, it increases to the value of 2.16×10⁹ Ω cm with increasing TEA. Eventually, the more conductive film with worm-like morphology detected from the scanning electron microscopy is synthesized using 0.30 ml TEA. These results show that complexing agent has an important effect on the structural, morphological, optical and electrical properties of the deposited films.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 3; 527-530
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Temperature Effect on the Growth Rate and Physical Characteristics of SnO2 Thin Films Grown by Atomic Layer Deposition
    Autorzy:
    Kim, D.
    Kim, D. H.
    Riu, D.-H.
    Choi, B. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/353808.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    atomic layer deposition
    tin oxide
    growth rate
    film density
    optical band gap
    Opis:
    Among the various thin film coating techniques, atomic layer deposition (ALD) has features of good controllability of the thickness, excellent step-coverage in 3-dimensional object even in the sub-nm thickness range at the relatively low deposition temperature. In this study, SnO2 thin films were grown by ALD in the variation of substrate temperatures from 150 to 250°C. Even such a low temperature may influence on the growth kinetics of the ALD reaction and thus the physical characteristics of thin films, such as crystallinity, film density and optical band gap, etc. We observed the decrease of the growth rate with increasing substrate temperature, at the same time, the density of the film was decreased with increasing temperature. Steric hindrance effect of the precursor molecule was attributed to the inverse relationship of the growth temperature and growth rate as well as the film density. Optical indirect band gap energy (~3.6 eV) of the ALD-grown amorphous SnO2 films grown at 150°C was similar with that of the literature value, while slightly lower band gap energy (~3.4 eV) was acquired at the films grown at higher temperature.
    Źródło:
    Archives of Metallurgy and Materials; 2018, 63, 2; 1061-1064
    1733-3490
    Pojawia się w:
    Archives of Metallurgy and Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effective energy integral functionals for thin films with three dimensional bending moment in the Orlicz-Sobolev space setting
    Autorzy:
    Laskowski, Włodzimierz
    Nguyen, Hong
    Powiązania:
    https://bibliotekanauki.pl/articles/729638.pdf
    Data publikacji:
    2016
    Wydawca:
    Uniwersytet Zielonogórski. Wydział Matematyki, Informatyki i Ekonometrii
    Tematy:
    Γ-convergence
    3D-2D dimension reduction
    quasiconvex relaxation
    minimizers of variational integral functionals
    thin films
    elastic membranes
    effective energy integral functional
    bulk and surface energy
    equilibrium states of the film
    non-power-growth-type bulk energy density
    reflexive Orlicz and Orlicz-Sobolev spaces
    Opis:
    In this paper we consider an elastic thin film ω ⊂ ℝ² with the bending moment depending also on the third thickness variable. The effective energy functional defined on the Orlicz-Sobolev space over ω is described by Γ-convergence and 3D-2D dimension reduction techniques. Then we prove the existence of minimizers of the film energy functional. These results are proved in the case when the energy density function has the growth prescribed by an Orlicz convex function M. Here M is assumed to be non-power-growth-type and to satisfy the conditions Δ₂ and ∇₂.
    Źródło:
    Discussiones Mathematicae, Differential Inclusions, Control and Optimization; 2016, 36, 1; 7-31
    1509-9407
    Pojawia się w:
    Discussiones Mathematicae, Differential Inclusions, Control and Optimization
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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