Temat: chip bonding - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Trends in assembling of advanced IC packages
Autorzy:: Kisiel, R.
Szczepański, Z.
Powiązania:: https://bibliotekanauki.pl/articles/308805.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: IC packages
SiP
wire bonding
TAB
ip chip
Opis:: In the paper, an overview of the current trends in the development of advanced IC packages will be presented. It will be shown how switching from peripheral packages (DIP, QFP) to array packages (BGA, CSP) and multichip packages (SiP, MCM) affects the assembly processes of IC and performance of electronic systems. The progress in bonding technologies for semiconductor packages will be presented too. The idea of wire bonding, flip chip and TAB assembly will be shown together with the boundaries imposed by materials and technology. The construction of SiP packages will be explained in more detail. The paper addresses also the latest solutions in MCM packages.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 63-69
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Transient Liquid Phase Behavior of Sn-Coated Cu Particles and Chip Bonding using Paste Containing the Particles
Autorzy:: Hwang, J. H.
Lee, J.-H.
Powiązania:: https://bibliotekanauki.pl/articles/353042.pdf
Data publikacji:: 2017
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: Sn-coated Cu
immersion plating
chip bonding
intermetallic compounds (IMC)
transient liquid phase (TLP)
sintering
Opis:: Sn-coated Cu particles were prepared as a filler material for transient liquid phase (TLP) bonding. The thickness of Sn coating was controlled by controlling the number of plating cycles. The Sn-coated Cu particles best suited for TLP bonding were fabricated by Sn plating thrice, and the particles showed a pronounced endothermic peak at 232°C. The heating of the particles for just 10 s at 250°C destroyed the initial core-shell structure and encouraged the formation of Cu-Sn intermetallic compounds. Further, die bonding was also successfully performed at 250°C under a slight bonding pressure of around 0.1 MPa using a paste containing the particles. The bonding time of 30 s facilitated the bonding of Sn-coated Cu particles to the Au surface and also increased the probability of network formation between particles.
Źródło:: Archives of Metallurgy and Materials; 2017, 62, 2B; 1143-1148
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

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