Temat: charge-pumping - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Characterization of SOI MOSFETs by means of charge-pumping
Autorzy:: Głuszko, G.
Szostak, S.
Gottlob, H.
Lemme, M.
Łukasiak, L.
Powiązania:: https://bibliotekanauki.pl/articles/308671.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI MOSFET
Opis:: This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 67-72
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Charge-pumping characterization of FILOX vertical MOSFETs
Autorzy:: Głuszko, G.
Łukasiak, L.
Ashburn, P.
Powiązania:: https://bibliotekanauki.pl/articles/308623.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
FILOX
interface traps
MOSFET
vertical MOSFET
Opis:: This paper presents for the first time the results of charge-pumping (CP) measurements of FILOX vertical transistors. The aim of these measurements is to provide information on the density of interface traps at the Si-SiO2 interface fabricated in a non-standard process. Flat-band and threshold voltage, as well as density of interface traps are determined. Good agreement between threshold-voltage values obtained from CP and I-V measurements is observed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 73-77
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Arbitrary waveform generator for charge-pumping
Autorzy:: Iwanowicz, M.
Pióro, Z.
Łukasiak, L.
Jakubowski, A.
Powiązania:: https://bibliotekanauki.pl/articles/308629.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: arbitrary waveform generator,
calibration
charge-pumping
digital synthesis
noise
Opis:: The paper presents a new signal generator for charge-pumping. Modular structure of the generator is discussed with special emphasis on signal-generation module consisting of five independent signal channels. Digital signal synthesis is chosen to minimize inaccuracies. Noise analysis is performed to demonstrate the validity of the design of signal channel. Calibration procedure is also discussed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 78-83
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Autorzy:: Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308669.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer
Opis:: The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Measurement and performance evaluation of a silicon on insulator pixel matrix
Autorzy:: Ntavelis, D.
Harik, L.
Sallese, J.-M.
Kayal, M.
Hatzopoulos, A.
Powiązania:: https://bibliotekanauki.pl/articles/397821.pdf
Data publikacji:: 2010
Wydawca:: Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
Tematy:: technika SOI tranzystora polowego MOS
czujnik obrazu
pompować ładunek
pierwsza kolejność delta-sigma
SOI MOSFET
image sensors
charge pumping
first order delta-sigma
Opis:: A new technique for driving silicon-on-insulator pixel matrixes has been proposed in |1|, which was based on transient charge pumping for evacuating the extra photo-generated charges from the body of the transistor. An 8x8 pixel matrix was designed and fabricated using the above technique. In this paper, the measurement set-up is described and the performance evaluation procedure is given, together with results of its implementation on the fabricated pixel matrix. The results show the applicability of the charge pumping technique and the effective operation of the image sensor.
Źródło:: International Journal of Microelectronics and Computer Science; 2010, 1, 3; 299-304
2080-8755
2353-9607
Pojawia się w:: International Journal of Microelectronics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

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