Temat: barrier height - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparison of the barrier height measurements by the Powell method with the phi MS measurement results
Autorzy:: Piskorski, K.
Kudła, A.
Rzodkiewicz, W.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308846.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barrier height
effective contact potential difference
MOS system
Opis:: In this work, we have compared the barrier height measurements carried out using the Powell method with the photoelectric effective contact potential difference (phi MS) measurement results. The photoelectric measurements were performed on the samples that were previously applied in the investigation of the influence of stress on the duration of annealing in nitrogen. This paper shows that the results of barrier height measurement using the Powell method differ significantly from the phi MS measurement results.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 120-123
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Investigation of barrier height distributions over the gate area of Al-SiO2-Si structures
Autorzy:: Piskorski, K.
Przewłocki, H. M.
Powiązania:: https://bibliotekanauki.pl/articles/308661.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: barrier height
effective contact potential difference
MOS system
Opis:: Distributions of the gate-dielectric EBG(x, y) and semiconductor-dielectric EBS(x, y) barrier height values have been determined using the photoelectric measurement method. Modified Powell-Berglund method was used to measure barrier height values. Modification of this method consisted in using a focused UV light beam of a small diameter d =0.3 mm. It was found that the EBG(x, y) distribution has a characteristic dome-like shape which corresponds with the independently determined shape of the effective contact potential difference fMS(x, y) distribution. On the other hand, the EBS(x, y) distribution is of a random character. It is shown that the EBG(x, y) distribution determines the shape of the fMS(x, y) distribution. The model of the EBG and EBS barrier height distributions over the gate area has been proposed.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 49-54
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Temperature dependent electrical characteristics of Nichrome/4H-SiC Schottky barrier diodes
Autorzy:: Khanna, Shaweta
Noor, A.
Powiązania:: https://bibliotekanauki.pl/articles/1076274.pdf
Data publikacji:: 2019
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: Nichrome
Schottky Diodes
Schottky barrier height
ideality factor
rapid thermal annealing
Opis:: Nichrome Schottky barrier diodes have been fabricated on 4H-SiC substrates to investigate the temperature dependant electrical characteristics of the fabricated contacts. The electrical parameters such as barrier height, ideality factor and donor concentration were found from the current-voltage (I-V) and the capacitance-voltage (C-V) measurements at room temperature. Barrier Contacts showed non-ideal behaviour like lower value of barrier height and high value of ideality factor. A barrier height of 1.53eV obtained from C-V measurements and 0.79eV obtained from the I-V measurements with ideality factor of 1.96 for as-deposited diodes at room temperature. The diodes, therefore, were annealed in the temperature range from 25-400 ºC to see the effect of annealing temperature on these parameters. Schottky barrier height (SBH) and ideality factors were found temperature dependent. After rapid thermal annealing (RTA) upto 400 ºC barrier height of 1.27 eV from C-V measurements and the value of 1.13 eV were obtained from I-V measurements with ideality factor of 1.12. Since barrier height deduced from C-V measurements were consistently larger than those from I-V measurements. To remove this discrepancy we re-examined our results by including the effect of ideality factor in the expression of the saturation current. The insertion of ideality factor results in comparably good agreement between the values of barrier height derived by above two methods. We believe that the enhancement in the electrical parameters result from the improvement in the quality of interfacial layer.
Źródło:: World Scientific News; 2019, 116; 169-179
2392-2192
Pojawia się w:: World Scientific News
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Barrier modification of Al/PS/c-Si Schottky contact based on porous silicon interfacial layer
Autorzy:: Hadi, Hasan A.
Powiązania:: https://bibliotekanauki.pl/articles/1178052.pdf
Data publikacji:: 2018
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: Norde method
Porous silicon
Schottky barrier height
electrochemical etching
Opis:: This paper presents the fabrication and characterization of the different types of porous silicon PS (n-type and p-type) were used as a semiconductor to modifying Schottky contacts (Al/p-PS, Al/n-PS) and ohmic contact (Al/p-Si, Al/n-Si) respectively. Porous layer formed by electrochemical and photo-electrochemical etching. Barrier height, ideal factor, series resistance, are carefully figured out and compared with (I-V, C-V) measurements, H(I) and F(V) equations. The ideally factor was very high and the value of the Schottky barrier height of p-type sample was larger than that of n-type for all methods were use in this study. Also, higher series resistance for Al/PS/p-Si Schottky diode as compared to Al/PS/n-Si Schottky diode while the junction exhibits strong rectifying characteristics for n-type as compared of p-type.
Źródło:: World Scientific News; 2018, 95; 89-99
2392-2192
Pojawia się w:: World Scientific News
Dostawca treści:: Biblioteka Nauki

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