Barrier modification of Al/PS/c-Si Schottky contact based on porous silicon interfacial layer

This paper presents the fabrication and characterization of the different types of porous silicon PS (n-type and p-type) were used as a semiconductor to modifying Schottky contacts (Al/p-PS, Al/n-PS) and ohmic contact (Al/p-Si, Al/n-Si) respectively. Porous layer formed by electrochemical and photo-electrochemical etching. Barrier height, ideal factor, series resistance, are carefully figured out and compared with (I-V, C-V) measurements, H(I) and F(V) equations. The ideally factor was very high and the value of the Schottky barrier height of p-type sample was larger than that of n-type for all methods were use in this study. Also, higher series resistance for Al/PS/p-Si Schottky diode as compared to Al/PS/n-Si Schottky diode while the junction exhibits strong rectifying characteristics for n-type as compared of p-type.