- Tytuł:
- Modeling, Simulation and Calibration of Silicon Wet Etching
- Autorzy:
-
Kociubiński, A.
Duk, M.
Bieniek, T.
Janus, P. - Powiązania:
- https://bibliotekanauki.pl/articles/308233.pdf
- Data publikacji:
- 2009
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
anisotropic wet etching
KOH
silicon technology - Opis:
- The methods of parameter optimization in Etch3DTM simulator and the results of the comparison of simulations of silicon etching in KOH with experiments are presented. The aim of this study was to calibrate the tool to a set of process conditions that is offered by Institute of Electron Technology (ITE). The Taguchi approach was used to analyze the influence of every remove probability function (RPF) parameter on one or more output parameters. This allowed tuning the results of simulation to the results of real etching performed in ITE.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2009, 4; 65-70
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł