- Tytuł:
- A simple semi-analytical model for the Kink effect for the intrinsic n-channel polysilico thin film transistors
- Autorzy:
-
Siddiqui, M. J.
Qureshi, S.
Alshariff, S. M. - Powiązania:
- https://bibliotekanauki.pl/articles/378435.pdf
- Data publikacji:
- 2007
- Wydawca:
- Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
- Tematy:
-
cienkie warstwy
tranzystory
jonizacja
pole elektryczne
model analityczny
efekt Kinka
polisilikon
thin films
tranzistors
ionization
electric field
analylical model
Kink effect
polysilicon - Opis:
- In order to improve the modeling of Polysilicon thin film transistors (Poly-Si-TFTs) a precise evaluation of the excess current due to impact ionization is needed. In this paper we have proposed a simple model for the excess current resulting from the impact ionization occurring at high drain biases. Model is based on the estimation of the electric field in the saturated part of the channel. The electric field in the saturated region is obtained by the solution of the two- dimensional Poisson's equation. The model is semi-analytical and uses only one fitting parameter which is desirable for circuit simulation. The simulation results with the developed impact ionization current model are in excellent agreement with the available experimental output characteristics of the intrinsic n-channel Poly-Si-TFTs.
- Źródło:
-
Electron Technology : Internet Journal; 2007, 39, 1; 1-4
1897-2381 - Pojawia się w:
- Electron Technology : Internet Journal
- Dostawca treści:
- Biblioteka Nauki
Artykuł