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Tytuł:
Effect of Volume Percentage of Reinforcement on the Microstructure and Mechanical Properties of an Al6061-T6/SiC Surface Composite Fabricated Through Friction Stir Processing
Autorzy:
Ansari, Abdul Jabbar
Anas, Mohd
Powiązania:
https://bibliotekanauki.pl/articles/2201914.pdf
Data publikacji:
2023
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
friction stir processing
AMMCs
aluminium metal matrix composite
silicon carbide
microstructure
surface composites
composite material
Opis:
In this research, aluminium metal matrix composites (AMMCs) have been manufactured through friction stir processing (FSP) by reinforcing nano-sized SiC particles in an Al6061-T6 alloy. The consequences of the volume percentage of reinforced SiC particles on mechanical properties and microstructural features were analyzed for the developed AMMCs. Microstructural evaluation of a cross-section of a friction stir processed (FSPed) sample has been conducted through Electron backscatter diffraction (EBSD) Energy dispersive spectroscopy (EDS) and a scanning electron microscope (SEM) technique. Microhardness tests were conducted athwart the cross section of FSPed specimen to obtain microhardness feature. A tensile test of FSPed samples has been conducted on a universal testing machine (UTM). Homogeneous distributions of SiC particles were found in the stir zone without any consolidation of particles. The size of the reinforcement particles was decreased slightly by increasing the volume fraction. It has been found that increasing the volume fraction of SiC particles, enhance the tensile strength and microhardness, but decreases the ductility of the aluminium. The maximum ultimate tensile strength (UTS) and microhardness were obtained as 390 MPa and 150.71 HV, respectively, at 12% volume percentage of reinforcement particles. UTS and microhardness of the FSPed Al/SiC have been improved by 38.29% and 59.48% respectively as compared to Al6061-T6. The brittle nature of the FSPed Al/SiC has increased due to a rise in the volume fraction of nanosized SiC particles, which causes a decrease in ductility.
Źródło:
Advances in Science and Technology. Research Journal; 2023, 17, 2; 247--257
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wielowarstwowe wkłady ceramiczne w konstrukcji pancerzy kompozytowych
Multi-Layered Ceramic Inserts in Composite Armour Design
Autorzy:
Zbies, Piotr
Liguz, Piotr
Zgliński, Piotr
Lipiński, Tomasz
Nowacki, Krzysztof
Powiązania:
https://bibliotekanauki.pl/chapters/28328122.pdf
Data publikacji:
2023-12-14
Wydawca:
Politechnika Częstochowska. Wydawnictwo Politechniki Częstochowskiej
Tematy:
azotek krzemu
ochrona balistyczna
pancerz ceramiczny
tlenek glinu
węglik boru
węglik krzemu
alumina
ballistic protection
boron carbide
ceramic armor
silicon carbide
silicon nitride
Opis:
Częstym efektem prac nad antybalistycznymi osłonami kompozytowymi są rozwiązania wielowarstwowe. Problemem samodzielnych prac badawczych w tym kierunku jest ograniczona liczba publikacji zajmujących się tematem osłon ceramicznych, które składają się z więcej niż trzech warstw. Uzupełnieniem luk literaturowych, jako kontynuacja projektu EGIDA AGH, będą prace prowadzone przez Koło Naukowe Konstrukcji Militarnych „Adamantium” w ramach projektu EGIDA AGH 2.0. Zakres badań będzie obejmował konstrukcje i właściwości aplikacyjne nowych, wielowarstwowych układów pancerzy oraz ich wpływ na obniżenie masy powierzchniowej docelowych paneli osłonowych pojazdów pancernych. Niniejszy rozdział jest wprowadzeniem teoretycznym do założeń nowego projektu koła naukowego. Omawia on teoretyczne podstawy stosowania ceramiki w pancerzach kompozytowych oraz problem doboru ceramiki w układach pięciowarstwowych i grubszych.
One of common results of the research and development of composite armor are multi-layered solutions. The problem with independent research in this direction is the limited number of publications dealing with ceramic armors com- posed of more than three layers. In order to fill the gaps in the literature, as a con- tinuation of the EGIDA AGH project, the research will be conducted by the Scien- tific Circle of Military Constructions “Adamantium” as a part of the EGIDA AGH 2.0 project. The scope of the research will include the design and application prop- erties of new multi-layer armor systems and their impact on reducing the surface density of target panels of armored vehicles. This is a theoretical introduction to the assumptions of the new scientific circle project. The presentation discusses the theoretical foundations of using ceramics in composite armor, as well as the problem of selecting ceramics in five-layer and thicker systems.
Źródło:
Potencjał innowacyjny w inżynierii materiałowej i zarządzaniu produkcją; 97-105
9788371939457
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rola odlewnictwa precyzyjnego w inżynierii materiałowej
The role of precision casting in materials science and engineering
Autorzy:
Wiśniewski, Paweł
Powiązania:
https://bibliotekanauki.pl/articles/36123068.pdf
Data publikacji:
2022
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Ceramiki i Materiałów Budowlanych
Tematy:
ceramika
lotnictwo
inżynieria materiałowa
odlewnictwo precyzyjne
węglik krzemu
nadstop niklu
spoiwo
proszki
masy formierskie
ceramics
aviation
materials science
precision casting
silicon carbide
nickel superalloy
binders
powders
slurries
Opis:
W artykule przedstawiono zagadnienia związane z inżynierią materiałową, ceramiką i odlewnictwem precyzyjnym. Opisano historię i przebieg procesu odlewania detali i części silników lotniczych metodą traconego wosku. Manuskrypt zawiera również generalne informacje o spoiwach, proszkach, masach formierskich, formach odlewniczych i nadstopach niklu. Zaprezentowano podstawowe dane o spoiwach zawierających nanocząstki ceramiczne, modelach woskowych, na które nanoszone są masy lejne oraz o SiC - jednym z perspektywicznych proszków formierskich.
The paper presents the main issues related to materials engineering and technology, ceramics and precision casting process. The history and methodology of the lost-wax casting process of elements and aircraft engine parts is described. The manuscript also contains general information on binders, powders, molding compounds, foundry molds and nickel superalloys. Basic data on binders containing ceramic nanoparticles, wax models and SiC - one of the prospective molding powders are presented.
Źródło:
Szkło i Ceramika; 2022, 73, 3; 30-37
0039-8144
Pojawia się w:
Szkło i Ceramika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Power Ultrasound on Microstructure Evolution During the Transient Liquid Stage of Ultrasonic-Promoted TLP Bonding SiCp/Al MMCs
Autorzy:
Zhou, Changzhuang
Ma, Lin
Zhu, Chao
Cui, Qinghe
Liang, Jindi
Song, Yujian
Powiązania:
https://bibliotekanauki.pl/articles/2174569.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
transient liquid phase bonding
silicon carbide reinforced aluminum matrix composites
ultrasonics
zinc interlayer
Opis:
Ultrasound-promoted transient liquid phase bonding (U-TLP) is a high quality, high efficiency, and low-cost method for fast bonding of difficult-wetting materials in the atmospheric environment. In this paper, U-TLP was used to bond SiC particles reinforced aluminium-based metal matrix composite which particle volume fraction was 70%. The pure zinc foil was used as the intermediate layer. The effects of ultrasonic on microstructure evolution and mechanical properties of joints during the transient liquefaction stage were investigated. The mechanism of ultrasonic effects in the transient liquefaction stage of U-TLP was also inducted. The results showed that high volume fraction SiCp/Al MMCs were bonded well at low temperature in the air environment. Ultrasonic vibration can remove the oxide film on the surface of aluminum matrix composites, enhance the wettability of SiC particles with weld metal, promote atomic diffusion and homogenization of SiC particles, and improve the welding quality and efficiency. Reasonable increase of ultrasonic vibration time could effectively improve the joint strength.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 4; 1283--1291
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Various Aspects of Application of Silicon Carbide in the Process of Cast Iron Melting
Autorzy:
Janerka, Krzysztof
Kostrzewski, Łukasz
Stawarz, Marcin
Jezierski, Jan
Szajnar, Jan
Powiązania:
https://bibliotekanauki.pl/articles/2134113.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
cast iron
ductile iron
silicon carbide
SiC
cast iron melting
Opis:
The article discusses benefits associated with the use of silicon carbide in the process of melting gray cast iron and ductile cast iron in induction electric furnaces. It presents the analysis of the impact of various charge materials and the addition of a variable amount of SiC and FeSi to the fixed charge when melting cast iron of grades GJS 400-15 and GJS 500-7 on mechanical properties and microstructure. Moreover, the article includes an analysis of the efficiency of carburization and the increase in the content of silicon during the application of SiC. The article also presents the results of the study of primary modification using silicon carbide at the minimum temperature of Temin eutectic and Tsol solidus. Based on analysis of the literature, conducted research, and calculations, it was found that the addition of silicon carbide has a beneficial impact on the properties of melted cast iron. The addition of SiC in the charge increases the content of C and Si without increasing the amount of contaminations. The addition of SiC at reduced pig iron presence in the charge decreases production costs, while the use of SiC as an inoculant increases both Temin and Tsol, which is beneficial from the point of view of cast iron nucleation.
Źródło:
Archives of Metallurgy and Materials; 2022, 67, 3; 1093--1098
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An active power filter based on a hybrid converter topology – Part 1
Autorzy:
Gwóźdź, Michał
Ciepliński, Łukasz
Powiązania:
https://bibliotekanauki.pl/articles/2173586.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
shunt active power filter
pulse width modulation
PWM
sigma-delta modulator
silicon carbide
bocznikowy filtr mocy czynnej
modulacja szerokości impulsu
modulator sigma-delta
węglik krzemu
Opis:
This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; art. no. e136218
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An active power filter based on a hybrid converter topology – Part 1
Autorzy:
Gwóźdź, Michał
Ciepliński, Łukasz
Powiązania:
https://bibliotekanauki.pl/articles/2090725.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
shunt active power filter
pulse width modulation
PWM
sigma-delta modulator
silicon carbide
bocznikowy filtr mocy czynnej
modulacja szerokości impulsu
modulator sigma-delta
węglik krzemu
Opis:
This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; e136218, 1--10
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evaluating the Durability of SiC-Coated Carbon Composites Under Thermal Shock Conditions
Autorzy:
Lee, Ji Eun
Bae, Soo Bin
Cho, Nam Choon
Lee, Hyung Ik
Meng, Zicheng
Lee, Kee Sung
Powiązania:
https://bibliotekanauki.pl/articles/2049309.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
durability
carbon composites
silicon carbide coating
chemical vapor deposition
chemical vapor reaction
Opis:
Oxidation and indentation properties of silicon carbide-coated carbon composites were investigated to analyze its durability under atmospheric thermal shock conditions. The silicon carbide-coated samples were prepared either with chemical vapor deposition or chemical vapor reaction/chemical vapor deposition hybrid coating. The remnant weight of uncoated and coated samples was investigated after each thermal shock cycle. The surface and cross-section of coated samples were then analyzed to confirm morphological changes of the coating layers. The spherical indentation test for uncoated and coated samples were also performed. As a result, silicon carbide coating improved the oxidation resistance, elastic modulus, and hardness of carbon composites. Hybrid coating drastically enhanced the durability of samples at high temperature in atmospheric conditions.
Źródło:
Archives of Metallurgy and Materials; 2021, 66, 3; 777-782
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849000.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849019.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling of changes in the resistivity of semi-insulating materials
Autorzy:
Suproniuk, Marek
Powiązania:
https://bibliotekanauki.pl/articles/1849057.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
resistivity
semiconductor
gallium phosphide
silicon carbide
Opis:
Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
Źródło:
Metrology and Measurement Systems; 2021, 28, 3; 581-592
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
Autorzy:
Bąba, Sebastian
Powiązania:
https://bibliotekanauki.pl/articles/2173625.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
reliability engineering
reliability modelling
power MOSFET
SiC
silicon carbide
inżynieria niezawodności
modelowanie niezawodności
węglik krzemu
tranzystor mocy MOSFET
Opis:
The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; art. no. e137386
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiparameter reliability model for SiC power MOSFET subjected to repetitive thermomechanical load
Autorzy:
Bąba, Sebastian
Powiązania:
https://bibliotekanauki.pl/articles/2090738.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
reliability engineering
reliability modelling
power MOSFET
SiC
silicon carbide
inżynieria niezawodności
modelowanie niezawodności
węglik krzemu
tranzystor mocy MOSFET
Opis:
The main drawback of any Design for Reliability methodology is lack of easy accessible reliability models, prepared individually for each critical component. In this paper, a reliability model for SiC power MOSFET in SOT – 227 B housing, subjected to power cycling, is presented. Discussion covers preparation of Accelerated Lifetime Test required to develop such reliability model, analysis of semiconductor degradation progress, samples post-failure analysis and identification of reliability model parameters. Such model may be further used for failure prognostics or useful lifetime estimation of High Performance Power Supplies.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 3; e137386, 1--8
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
TiAl-based Ohmic Contacts to p-type 4H-SiC
Autorzy:
Martychowiec, Agnieszka
Kwietniewski, Norbert
Kondracka, Kinga
Werbowy, Aleksander
Sochacki, Mariusz
Powiązania:
https://bibliotekanauki.pl/articles/1844507.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ohmic contact
SiC
silicon carbide
TiAl
Opis:
This paper describes successfully formed ohmic contacts to p-type 4H-SiC based on titanium-aluminum alloys. Four different metallization structures were examined, varying in aluminum layer thickness (25, 50, 75, 100 nm) and with constant thickness of the titanium layer (50 nm). Structures were annealed within the temperature range of 800°C - 1100°C and then electrically characterized. The best electrical parameters and linear, ohmic character of contacts demonstrated structures with Al layer thickness equal or greater than that of Ti layer and annealed at temperatures of 1000°C or higher.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 3; 459-463
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Towards a viable method of reusing silicon carbide. Physicochemical analyses in the studies on the industrial application of the material
Autorzy:
Niemczyk-Wojdyla, Anna
Fornalczyk, Agnieszka
Willner, Joanna
Zawisz, Rafał
Powiązania:
https://bibliotekanauki.pl/articles/2032847.pdf
Data publikacji:
2021
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
silicon carbide
X-ray spectroscopy
Acheson process
węglik krzemu
spektroskopia rentgenowska
proces Achesona
Opis:
The paper presents an investigation on the feasibility of recovery of the highly valuable silicon carbide (SiC) from the slurry waste generated from silicon wafer production in the photovoltaic and semiconductor industry. Compared to the other techniques of recycling, a facile and low-cost method of waste treatment via heat drying followed by low-energy mixing in a shaker mixer was proposed. As the result of the treatment, the slurry waste was converted into a powdered form with dominant content of SiC. Separated SiC material was characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray powder diffraction, and sieve analysis. In addition, analyses of the bulk density, moisture content and melting test were carried out. As was confirmed by the physicochemical analyses, the dominant sieve fraction was in the range of 0.1-0.06 mm, the purity level was a minimum 99% mass of SiC, the moisture content - 0.3%, the bulk density - 1.3 g/cm3. The physicochemical characteristics of the material were crucial for understanding the material performance, assessment of the material quality and determining the perspective directions of the industrial application. The studies revealed that the material exhibited a high application potential as abrasive, especially in abrasive grinding and waterjet cutting.
Źródło:
Environment Protection Engineering; 2021, 47, 4; 43-52
0324-8828
Pojawia się w:
Environment Protection Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 74

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