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Tytuł:
A current-source concept for fast and efficient driving of silicon carbide transistors
Autorzy:
Rąbkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/141047.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide transistors
gate drivers
current-source
switching process
Opis:
The paper discusses the application of the current-source concept in the gate drivers for silicon carbide transistors. There is a common expectation that all SiC devices will be switched very fast in order to reach very low values of switching energies. This may be achieved with the use of suitable gate drivers and one of possibilities is a solution with the current source. The basic idea is to store energy in magnetic field of a small inductor and then release it to generate the current peak of the gate current. The paper describes principles of the current-source driver as well as various aspects of practical implementation. Then, the switching performance of the driven SiC transistors is illustrated by double-pulse test results of the normally-ON and normally-OFF JFETs. Other issues such as problem of the drain-gate capacitance and power consumption are also discussed on the base of experimental results. All presented results show that the currentsource concept is an interesting option to fast and efficient driving of SiC transistors.
Źródło:
Archives of Electrical Engineering; 2013, 62, 2; 333-343
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Abrasion Resistance of S235, S355, C45, AISI 304 and Hardox 500 Steels with Usage of Garnet, Corundum and Carborundum Abrasives
Autorzy:
Szala, Mirosław
Szafran, Michał
Macek, Wojciech
Marchenko, Stanislav
Hejwowski, Tadeusz
Powiązania:
https://bibliotekanauki.pl/articles/103045.pdf
Data publikacji:
2019
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
abrasion
wear resistance
dry sand-rubber wheel test
garnet
aluminum oxide
silicon carbide
steel
hardness
microstructure
odporność na ścieranie
test koła suchy piasek-guma
granat
tlenek glinu
węglik krzemu
stal
twardość
mikrostruktura
Opis:
The steel presents a wide field of application. The abrasive wear resistance of steel relies mainly on the microstructure, hardness as well as on the abrasive material properties. Moreover, the selection of a abrasion-resistant grade of steel still seems to be a crucial and unsolved problem, especially due to the fact that the actual operating conditions can be affected by the presence of different abrasive materials. The aim of this work was to determine the effect of different abrasive grit materials i.e. garnet, corundum and carborundum on the abrasive wear result of a commonly used in industry practice steels i.e. S235, S355, C45, AISI 304 and Hardox 500. The microstructure of the steel was investigated using light optical microscopy. Moreover, hardness was measured with Vickers hardness tester. Additionally, the size and morphology of the abrasive materials were characterized. The abrasion tests were conducted with the usage of T-07 tribotester (dry sand rubber wheel). The results demonstrate that the hardness and structure of steels and hardness of abrasive grids influenced the wear results. The abrasive wear behavior of steels was dominated by microscratching and microcutting wear mechanisms. The highest mass loss was obtained for garnet, corundum, and carborundum, respectively. The usage of various abrasives results in different abrasion resistance for each tested steel grade. The AISI 304 austenitic stainless steel presents an outstanding abrasive wear resistance while usage of corundum and Hardox 500 while using a garnet as abrasive material. The C45 carbon steel was less resistant than AISI 304 for all three examined abrasives. The lowest resistance to wear in garnet and carborundum was obtained for the S235JR and S355J2 ferritic-perlitic carbon steels and in corundum for Hardox 500 which has tempered martensitic structure.
Źródło:
Advances in Science and Technology. Research Journal; 2019, 13, 4; 151-161
2299-8624
Pojawia się w:
Advances in Science and Technology. Research Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An active power filter based on a hybrid converter topology – Part 1
Autorzy:
Gwóźdź, Michał
Ciepliński, Łukasz
Powiązania:
https://bibliotekanauki.pl/articles/2173586.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
shunt active power filter
pulse width modulation
PWM
sigma-delta modulator
silicon carbide
bocznikowy filtr mocy czynnej
modulacja szerokości impulsu
modulator sigma-delta
węglik krzemu
Opis:
This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; art. no. e136218
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
An active power filter based on a hybrid converter topology – Part 1
Autorzy:
Gwóźdź, Michał
Ciepliński, Łukasz
Powiązania:
https://bibliotekanauki.pl/articles/2090725.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
shunt active power filter
pulse width modulation
PWM
sigma-delta modulator
silicon carbide
bocznikowy filtr mocy czynnej
modulacja szerokości impulsu
modulator sigma-delta
węglik krzemu
Opis:
This paper presents a concept of a shunt active power filter, which is able to provide more precise mapping of its input current drawn from a power line in a reference signal, as compared to a typical filter solution. It can be achieved by means of an interconnection of two separate power electronics converters making, as a whole, a controlled current source, which mainly determines the quality of the shunt active filter operation. One of these power devices, the “auxiliary converter”, corrects the total output current, being a sum of output currents of both converters, toward the reference signal. The rated output power of the auxiliary converter is much lower than the output power of the main one, while its frequency response is extended. Thanks to both these properties and the operation of the auxiliary converter in a continuous mode, pulse modulation components in the filter input current are minimized. Benefits of the filter are paid for by a relatively small increase in the complexity and cost of the system. The proposed solution can be especially attractive for devices with higher output power, where, due to dynamic power loss in power switches, a pulse modulation carrier frequency must be lowered, leading to the limitation of the “frequency response” of the converter. The concept of such a system was called the “hybrid converter topology”. In the first part of the paper, the rules of operation of the active filter based on this topology are presented. Also, the results of comparative studies of filter simulation models based on both typical, i.e. single converter, and hybrid converter topologies, are discussed.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 1; e136218, 1--10
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of Silicon Carbide Chills in Controlling the Solidification Process of Casts Made of IN-713C Nickel Superalloy
Autorzy:
Szeliga, D.
Kubiak, K.
Cygan, R.
Ziaja, W.
Powiązania:
https://bibliotekanauki.pl/articles/379538.pdf
Data publikacji:
2012
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide
precision casting
porosity
nickel superalloy
węglik krzemu
odlewanie precyzyjne
porowatość
Opis:
The paper presents the method of manufacturing casts made of the IN-713C nickel superalloy using the wax lost investment casting process and silicon carbide chills. The authors designed experimental casts, the gating system and selected the chills material. Wax pattern, ceramic shell mould and experimental casts were prepared for the purposes of research. On the basis of the temperature distribution measurements, the kinetics of the solidification process was determined in the thickened part of the plate cast. This allowed to establish the quantity of phase transitions which occurred during cast cooling process and the approximate values of liquidus, eutectic, solidus and solvus temperatures as well as the solidification time and the average value of cast cooling rate. Non-destructive testing and macroscopic analysis were applied to determine the location and size of shrinkage defects. The authors present the mechanism of solidification and formation of shrinkage defects in casts with and without chills. It was found that the applied chills influence significantly the hot spots and the remaining part of the cast. Their presence allows to create conditions for solidification of IN-713C nickel superalloy cast without shrinkage defects.
Źródło:
Archives of Foundry Engineering; 2012, 12, 2s; 105-111
1897-3310
2299-2944
Pojawia się w:
Archives of Foundry Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie właściwości elementów mocy z węglika krzemu w zastosowaniach układowych
Studies of silicon carbide power devices properties in application circuits
Autorzy:
Łykowski, A.
Szewczyk, A.
Powiązania:
https://bibliotekanauki.pl/articles/268568.pdf
Data publikacji:
2015
Wydawca:
Politechnika Gdańska. Wydział Elektrotechniki i Automatyki
Tematy:
przetwornica impulsowa
węglik krzemu
silicon carbide power devices
switching converter
Opis:
W artykule prezentowane są wyniki badania właściwości elementów SiC w zastosowaniach układowych. Do celów pomiarowych zaprojektowano układ przetwornicy realizujący konfigurację buck oraz boost z elementami aktywnymi z SiC oraz z krzemu, jako elementami referencyjnymi. Układ przetwornicy był badany dla różnych zestawów elementów, konfiguracji i parametrów pracy.
The paper presents results of study on Silicon Carbide power devices applications in circuits. For this purpose the model of switching converter was designed and fabricated. The model allows application of both, buck and boost architecture. As a reference elements, typical silicon power devices were used. For SiC and Si devices the efficiency and disturbance level was measured. For boost architecture the highest efficiency was noticed for SiC devices, while for bust architecture the efficiency for those devices was lower. For both cases generated disturbances were lowest while Silicon carbide devices were used.
Źródło:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej; 2015, 46; 73-76
1425-5766
2353-1290
Pojawia się w:
Zeszyty Naukowe Wydziału Elektrotechniki i Automatyki Politechniki Gdańskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Calibration of temperature-sensitive parameter for Silicon Carbide SBD’S
Autorzy:
Kraśniewski, J.
Janke, W.
Powiązania:
https://bibliotekanauki.pl/articles/118388.pdf
Data publikacji:
2016
Wydawca:
Politechnika Koszalińska. Wydawnictwo Uczelniane
Tematy:
temperature-sensitive parameter calibration curves
Silicon Carbide Schottky Barrier diodes
krzywa kalibracyjna parametru termoczułego
dioda Schottky z węglika krzemu
Opis:
Thermal properties of semiconductor device may be characterized by thermal parameters or characteristics such as thermal resistance and thermal impedance. In order to calculate the thermal resistance or thermal impedance one must have a calibration curve of temperature-sensitive parameter of the device (e.g. the voltage drop across a junction). For the obtaining the calibration curve by measurement, the temperature chamber has to be used. Another possibility is to predict this curve theoretically from analytical equations or by simulations (e.g. PSPICE). In the paper, the simulation and theoretical predictions of temperature-sensitive parameter calibration curves are compared with the results of measurement for SiC devices with metal-semiconductor junction.
Właściwości termiczne elementów półprzewodnikowych można charakteryzować poprzez parametry lub charakterystyki termiczne, takie jak rezystancja i impedancja termiczna. W celu wyznaczenia rezystancji lub impedancji termicznej elementu półprzewodnikowego musimy posiadać krzywą kalibracji parametru termoczułego (np. spadek napięcia na złączu). Dla uzyskania pomiarowej krzywej kalibracyjnej należy wykorzystać komorę temperaturową. Inną możliwością jest teoretyczne przewidywanie ww. krzywej z równań analitycznych lub symulacji (np. PSPICE). W niniejszej pracy porównano krzywe kalibracyjne parametru termoczułego otrzymane na drodze symulacji i teoretycznych obliczeń z wynikami pomiarów dla urządzeń SiC o złącze m-s.
Źródło:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej; 2016, 9; 77-83
1897-7421
Pojawia się w:
Zeszyty Naukowe Wydziału Elektroniki i Informatyki Politechniki Koszalińskiej
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ceramic and Glass Fibre Reinforced Flexible Composites for Particulate Filter Walls – A Novel Approach
Opracowanie kompozytów giętkich wzmocnionych włóknami ceramicznymi i szklanymi do zastosowania w ścianach filtrów cząstek stałych
Autorzy:
Prabu, K.
Srinivasan, J.
Prakash, C.
Powiązania:
https://bibliotekanauki.pl/articles/233341.pdf
Data publikacji:
2019
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Biopolimerów i Włókien Chemicznych
Tematy:
PM
particulate matters
SiC
silicon carbide
cząstki stałe
kompozyty giętkie
Opis:
Flexible composites from high performance fibres were developed and targeted to replace the wall of existing rigid ceramic Particulate Filters. The composites are made from E Glass fibre webs of different density in the middle, with standard SiC Ceramic fibres webs in in the outer layers, forming a sandwich structure. Different needling densities were applied to form nonwoven composites, and they were stitched diagonally on the surface at specified intervals with continuous glass fibre filament yarn. In total, nine novel flexible composites were developed and evaluated for their structural, surface, mechanical and thermal properties. Based on the results and statistical analysis, the B2 sample is considered to be taken for further research to develop Particulate Matter (PM) filters.
W pracy opracowano giętkie kompozyty wzmocnione włóknami ceramicznymi i szklanymi do zastosowania w ścianach filtrów cząstek stałych. Kompozyty tworzące strukturę wielowarstwową zostały wykonane ze wstęg z włókna szklanego o różnej gęstości (warstwa wewnętrzna) i włókien ceramicznych (warstwa zewnętrzna). Zastosowano różne gęstości igłowania w celu utworzenia kompozytów włókninowych i zszyto je ukośnie na powierzchni w określonych odstępach za pomocą ciągłej przędzy z włókna szklanego. Opracowano dziewięć nowych giętkich kompozytów i oceniono ich właściwości: strukturalne, powierzchniowe, mechaniczne i termiczne. Na podstawie wyników i analizy statystycznej stwierdzono, że do dalszych badań w celu opracowania filtrów materii cząstek stałych (PM) należy wytypować próbkę B2.
Źródło:
Fibres & Textiles in Eastern Europe; 2019, 3 (135); 91-97
1230-3666
2300-7354
Pojawia się w:
Fibres & Textiles in Eastern Europe
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ceramic Armour for Armoured Vehicles Against Large-Calibre Bullets
Autorzy:
Maystrenko, Anatoliy L.
Kushch, Volodymyr I.
Pashchenko, Evgeniy A.
Kulich, Vitaliy G.
Neshpor, Olecksiy V.
Bisyk, Sergiy P.
Powiązania:
https://bibliotekanauki.pl/articles/403334.pdf
Data publikacji:
2020
Wydawca:
Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
Tematy:
reactive sintered silicon carbide
ceramic armour element
bullet
caliber
armour block
ballistic protection
reaktywny węglik krzemu spiekany
ceramiczny element pancerza
pocisk
kaliber
blok pancerza
ochrona balistyczna
Opis:
Modelling the armour-piercing bullets B-32 calibre 12.7 mm penetration into the double-layer ceramic-composite armour has been performed for the armour blocks of two designs. The first one is a layer of ceramic square tiles supported by the glass or polyamide fabric. Modelling and subsequent ballistic tests have shown that the conical Hertz crack localized in the ceramic tile is formed. The tile is destroyed from the spread of radial cracks, and the entire armour unit becomes unable to sustain the repeated hit of the bullet. In the second case, the armour block consists of the discrete epoxy-filled cylindrical ceramic elements with spherical ends. The advantage of this "discrete" armour is localization of the damage zone and thus an ability to sustain the multiple bullet hits. The ballistic tests of the compared armour units have shown that both provide effective additional protection of light-armoured vehicles against the normal impact of the calibre 12.7 mm bullet.
Źródło:
Problemy Mechatroniki : uzbrojenie, lotnictwo, inżynieria bezpieczeństwa; 2020, 11, 1 (39); 9-16
2081-5891
Pojawia się w:
Problemy Mechatroniki : uzbrojenie, lotnictwo, inżynieria bezpieczeństwa
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics
Autorzy:
Kondrath, N.
Kazimierczuk, M. K.
Powiązania:
https://bibliotekanauki.pl/articles/226774.pdf
Data publikacji:
2010
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
silicon carbide (SiC)
SiC properties
high voltage
high-temperature
high-frequency applications
high-temperature electronics
wide energy band-gap semiconductors
Opis:
Silicon carbide materials, with its high mechanical strength, high thermal conductivity, ability to operate at high temperatures, and extreme chemical inertness to most of the electrolytes, are very attractive for high-power applications. In this paper, properties, advantages, and limitations of SiC and conventional Si materials are compared. Various applications, where SiC power devices are attractive, are discussed.
Źródło:
International Journal of Electronics and Telecommunications; 2010, 56, 3; 231-236
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures
Autorzy:
Taube, A.
Guziewicz, M.
Kosiel, K.
Gołaszewska-Malec, K.
Król, K.
Kruszka, R.
Kamińska, E.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/953063.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
aluminum oxide
MOS
silicon carbide
4H-SiC
high-K dielectrics
tlenek glinu
węglik krzemu
dielektryki high-k
Opis:
The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2016, 64, 3; 537-551
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Codeposition of SiC particles with electrolytic nickel
Współosadzanie cząstek SiC z niklem w procesie elektrolizy
Autorzy:
Dobosz, I.
Rudnik, E.
Burzyńska, L.
Powiązania:
https://bibliotekanauki.pl/articles/351442.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
elektrochemia
kompozyt
nikiel
węglik krzemu
electrodeposition
composite
nickel
silicon carbide
Opis:
Ni/SiC composite coatings were produced by electrodeposition from chloride-sulphate bath. The effect of SiC concentration on the percentage of embedded particles at two current densities (0.75 and 1.50 Aźdm-2) was determined. SiC content in the nickel matrix was in the range of 13-23 vol%, but lower values were found for higher current density. Increased particles contents in the coatings practically did not change microhardness of deposits (approximately 300 HV), but it increased corrosion resistance. Morphology and particle distribution in the deposits was studied with optical and transmission electron microscopes. Specific surface charge of SiC particles as well as adsorption of Ni2+ions on the powder particles were also determined.
Powłoki kompozytowe Ni/SiC otrzymywano na drodze elektrolizy z zastosowaniem kąpieli chlorkowo-siarczanowej. Określono wpływ stężenia SiC na skład osadów katodowych uzyskiwanych przy dwóch gęstościach prądu (0.75 and 1.50 Aźdm-2). Udział SiC w osnowie niklowej wynosił 13-23 %obj., przy czym niższe zawartości stwierdzono w powłokach otrzymanych przy wyższej gęstości prądu. Wzrost zawartości fazy dyspersyjnej w osadach katodowych nie wpływa na mikrotwardość kompozytów (ok. 300 HV), następuje natomiast wzrost ich odporności korozyjnej. Morfologię powierzchni i rozkład cząstek dyspersyjnych w osnowie niklowej określano na podstawie obserwacji mikroskopowych. Wyznaczono ładunek powierzchniowy cząstek SiC oraz wielkość adsorpcji jonów Ni2+.
Źródło:
Archives of Metallurgy and Materials; 2011, 56, 3; 665-670
1733-3490
Pojawia się w:
Archives of Metallurgy and Materials
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparative investigation of SiC and Si power electronic devices operating at high switching frequency
Autorzy:
Zymmer, K.
Mazurek, P.
Powiązania:
https://bibliotekanauki.pl/articles/200057.pdf
Data publikacji:
2011
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
semiconductor devices
silicon carbide
high frequency converters
Opis:
The paper presents results of measurements of the reverse recovery current and dynamic forward voltage of the silicon carbide (SiC) Schottky diodes operating at a 500 A/ěs current slope. These data were compared with the corresponding parameters determined for ultrafast silicon (Si) diodes. Results of power losses measurement in SiC Schottky diodes operating at switching frequency range of (10–200) kHz are presented and compared with corresponding data of ultrafast Si diodes. Also, results of power losses measurements in transistors of dc voltage switch are shown. Investigations were conducted with a SiC and the ultrafast Si freewheeling diode at the transistor switching frequency of 100 kHz. The results of measuring power losses dissipated in the dc converter with a SiC Schottky diode and the ultrafast silicon diode are also presented.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2011, 59, 4; 555-559
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of 4H-SiC and 6H-SiC MOSFET I-V characteristics simulated with Silvaco Atlas and Crosslight Apsys
Autorzy:
Stęszewski, J.
Jakubowski, A.
Korwin-Pawlowski, M. L.
Powiązania:
https://bibliotekanauki.pl/articles/308627.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
silicon carbide
SiC MOSFET
4H-SiC
6H-SiC
Crosslight Apsys
Silvaco Atlas
Opis:
A set of physical models describing silicon carbide with fitting parameters is proposed. The theoretical I-V output and transfer characteristics and parameters of MOS transistors were calculated using Silvaco Atlas and Crosslight Apsys semiconductor device simulation environments.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 93-95
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of numerical and experimental study of armour system based on alumina and silicon carbide ceramics
Autorzy:
Chabera, P.
Boczkowska, A.
Morka, A.
Kędzierski, P.
Niezgoda, T.
Oziębło, A.
Witek, A.
Powiązania:
https://bibliotekanauki.pl/articles/202054.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ballistic performance
numerical simulation
armour
alumina ceramic
silicon carbide ceramic
ceramic-elastomer composites
wydajność balistyczna
symulacja numeryczna
zbroja
kompozyt ceramika-elastomer
Opis:
The main goal of this numerical and experimental study of composite armour systems was to investigate their ballistic behaviour. Numerical simulations were employed to determine the initial dimensions of panel layers before the actual ballistic test. In order to achieve this aim, multivariate computations with different thicknesses of panel layers were conducted. Numerical calculations were performed with the finite element method in the LS-DYNA software, which is a commonly used tool for solving problems associated with shock wave propagation, blasts and impacts. An axisymmetric model was built in order to ensure sufficient discretization. Results of a simulation study allowed thicknesses of layers ensuring assumed level of protection to be determined. According to the simulation results two armour configurations with different ceramics have been fabricated. The composite armour systems consisted of the front layer made of Al2O3 or SiC ceramic and high strength steel as the backing material. The ballistic performance of the proposed protective structures were tested with the use of 7.62 mm Armour Piercing (AP) projectile. A comparison of impact resistance of two defence systems with different ceramic has been carried out. Application of silicon carbide ceramic improved ballistic performance, as evidenced by smaller deformations of the second layer. In addition, one of armour systems was complemented with an intermediate ceramic-elastomer layer. A ceramic-elastomer component was obtained using pressure infiltration of gradient porous ceramic by elastomer. Upon ballistic impact, the ceramic body dissipated kinetic energy of the projectile. The residual energy was absorbed by the intermediate composite layer. It was found, that application of composite plates as a support of a ceramic body provided a decrease of the bullet penetration depth.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2015, 63, 2; 363-367
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 74

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