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Tytuł:
Conditions and assumptions of the Technology, Trade and Investment Collaboration framework (TTIC)
Autorzy:
Homoncik, Bartłomiej
Powiązania:
https://bibliotekanauki.pl/articles/26731157.pdf
Data publikacji:
2023
Wydawca:
Uniwersytet Ekonomiczny w Katowicach
Tematy:
GVC
friend-shoring
semiconductors
US
China
Opis:
The US-Taiwan Technology, Trade and Investment Collaboration framework is one of the American responses to the semiconductor Global Value Chains pandemic disruptions. It calls for closer economic and technological cooperation in the microchip industry including two-way investment. The aim of the study is to determine the potential positive and negative effects of TTIC within the context of complex Sino-American relations, and new approaches to globalisation with a special focus on its friend-shoring features. As the outcome of the analysis of the secondary data from research papers or reports and the descriptive research method conducted in this paper, TTIC appears as a balanced means of addressing the supply chain disruptions in the key sectors of the economy.
Źródło:
Academic Review of Business and Economics; 2023, 4(1); 73-89
2720-457X
Pojawia się w:
Academic Review of Business and Economics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
History of Semiconductors
Autorzy:
Łukasiak, L.
Jakubowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/308134.pdf
Data publikacji:
2010
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
band theory
laser
Moore's law
semiconductors
transistor
Opis:
The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and the theory of semiconductors up to the contemporary devices (SOI and multigate devices).
Źródło:
Journal of Telecommunications and Information Technology; 2010, 1; 3-9
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Nitridation and Pre-Growth Annealing of the Sapphire Substrate on the Quality of Zinc Oxide Thin Films Grown by RF-Magnetron Sputtering
Autorzy:
Baseer Haider, M.
Powiązania:
https://bibliotekanauki.pl/articles/1032562.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
thin films
wide bandgap semiconductors
ZnO
magnetron sputtering
Opis:
ZnO has attracted much attention due to its wide bandgap (3.2 eV) and high exciton binding energy of 60 meV. These properties make ZnO a highly desirable material for high frequency devices that can work in harsh environment. We have grown ZnO thin films at different temperatures ranging from 100°C to 500°C. We have observed that surface roughness is first decreased with the increase in the growth temperature but then by further increasing the growth temperature beyond 300°C, results in increased surface roughness of the grown samples, whereas grain size of the samples increases with the increase in the growth temperature. Crystalline quality of the films is also improved with the increase in the growth temperature but then degrades by further increase beyond 200°C. We achieved the highest Hall mobility for the ZnO sample grown at 200°C. The optimum growth condition of ZnO thin films on sapphire (0001) in our RF/DC magnetron-sputtering unit were achieved for the films grown at 200°C. Subsequently, we performed pre-growth treatment to the sapphire substrate then grew ZnO films at 200°C. Pre-growth treatment involved heating the substrate at 500°C for about half an hour and then etching the sapphire surface with nitrogen plasma. We have observed that pre-growth heating and nitridation of the sapphire substrate results in bigger grain size whereas no improvement was observed in the crystallinity of the film.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1325-1328
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chemiczne i elektrochemiczne wytwarzanie warstw tlenku cynku
Chemical and electrochemical preparation of zinc oxide coatings
Autorzy:
Wiliński, Z.
Lipińska, L.
Batijewski, R.
Marcjaniuk, A.
Powiązania:
https://bibliotekanauki.pl/articles/192160.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
tlenek cynku
elektrokrystalizacja
półprzewodnik
zinc oxide
electrocrystalization
semiconductors
Opis:
W artykule przedstawiono wyniki badań przeprowadzonych w celu wytworzenia warstw tlenku cynku o różnych strukturach, z wodnych roztworów metodą chemicznego osadzania i elektrosyntezy. Do osadzania ZnO wykorzystano następujące podłoża: szkiełka mikroskopowe i płytki szklane pokryte warstwą ITO. Wykonane warstwy poddano badaniom: mikroskopii skaningowej SEM, dyfrakcji rentgenowskiej XRD oraz fotoluminescencji.
Coatings of ZnO with chemical (SILAR) and electrochemical methods were prepared. As substrate microscope glass plates and glass plates ITO layer coated were used. Surface morphology (SEM), photoluminescence (PL) and crystal structure (XRD) were examined.
Źródło:
Materiały Elektroniczne; 2009, T. 37, nr 3, 3; 13-20
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of laser-induced melting and modification of the surface of semiconductors by nanosecond laser pulses
Autorzy:
Gnatyuk, V.
Aoki, T.
Vlasenko, O.
Gorodnychenko, O.
Powiązania:
https://bibliotekanauki.pl/articles/384325.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
semiconductors
laser irradiation
time-resolved reflectivity
melting threshold
Opis:
In situ detection and dynamics of laser-induced melting in different semiconductor crystals (CdTe, CdHgTe, GaAs, InSb and SiC) were performed by the time-resolved reflectivity (TRR). The samples were subjected to irradiation with 20 ns pulses of KrF excimer or ruby laser with energy density varied in a wide range. The surface morphology of the crystals was monitored using optical microscopy and time dependences of the temperature of the crystal surface as a function of laser pulse energy density was also calculated. The melting and ablation threshold values were determined and specific features of the laser-induced phase transitions in the surface region of the semiconductors were analyzed.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 33-36
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First Principle Investigations on Electronic, Magnetic, Thermodynamic, and Transport Properties of TlGdX₂ (X = S, Se, Te)
Autorzy:
Gautam, R.
Kumar, A.
Singh, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032602.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
semiconductors
electronic structure
magnetic properties and thermodynamic properties
Opis:
In the present research paper, we investigated spin polarized electronic, magnetic, thermodynamic, and transport properties of thallium gadolinium dichalcogenides TlGdX₂ (X = S, Se, Te) using density functional theory. Electronic structure reveals that all the three compounds are wide band gap semiconductors which are beneficial for good thermoelectric performance. Calculated magnetic moment of TlGdX₂ is found to be in good agreement with available experimental values and mainly dominant by Gd³⁺ ions. Semiclassical Boltzmann transport theory has been used to calculate the Seebeck coefficient and electrical conductivity for the proposed dichalcogenides. Calculated values of the Seebeck coefficient and electrical conductivity are found to be consistent with available experimental values in literature. Thermodynamic properties of TlGdX₂ have also been estimated for the first time and explained on the basic facts.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1371-1378
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low voltage winding insulation systems under the influence of high du/dt slew rate inverter voltage
Autorzy:
Pauli, Florian
Ruf, Andreas
Hameyer, Kay
Powiązania:
https://bibliotekanauki.pl/articles/140993.pdf
Data publikacji:
2020
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
life time
partial discharge
SiC semiconductors
winding insulation system
Opis:
Variable speed and low voltage electrical drives are commonly operated by frequency converters. According to recent developments, there is a trend in the area of semi-conductors, that switching frequency and voltage slew rate will increase significantly. The aim of these semiconductors is to reduce the switching losses and to increase the switching frequency, which enables to reduce the size of passive components in the powerelectric circuit. This results in less material effort and lower cost, for the power electronic component. However, electric motors operated by high slew rate inverters show problems in the winding insulation, which have to be analyzed. Such problems are well known for high voltage machines. Due to the increasing slew rate, this problematic occurs in low voltage machines nowadays as well. Here, the influence of fast switching semiconductors on the winding insulation system is studied, using accelerated ageing tests with fast switching high-voltage generators.
Źródło:
Archives of Electrical Engineering; 2020, 69, 1; 187-202
1427-4221
2300-2506
Pojawia się w:
Archives of Electrical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopic Ellipsometry Analysis of Rapid Thermal Annealing Effect on MBE Grown GaAs1-x-Nx
Autorzy:
Sedrine, N.
Rihani, J.
Harmand, J.
Chtourou, R.
Powiązania:
https://bibliotekanauki.pl/articles/308950.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
GaAs11-x -Nx
optical constants
semiconductors
spectroscopic ellipsometry
Opis:
We report on the effect of rapid thermal annealing (RTA) on GaAs1-x-Nx layers, grown by molecular beam epitaxy (MBE), using room temperature spectroscopic ellipsometry (SE). A comparative study was carried out on a set of GaAs1-x-Nx as-grown and the RTA samples with small nitrogen content (x = 0.1%, 0.5% and 1.5%). Thanks to the standard critical point model parameterization of the GaAs1-x-Nx extracted dielectric functions, we have determined the RTA effect, and its nitrogen dependence. We have found that RTA affects more samples with high nitrogen content. In addition, RTA is found to decrease the E1 energy nitrogen blueshift and increase the broadening parameters of E1, E1+?1, E'0 and E2 critical points.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 1; 51-56
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On a nonlocal elliptic problem
Autorzy:
Raczyński, Andrzej
Powiązania:
https://bibliotekanauki.pl/articles/1338872.pdf
Data publikacji:
1999
Wydawca:
Polska Akademia Nauk. Instytut Matematyczny PAN
Tematy:
electrodiffusion of ions
nonlinear elliptic problem
theory of semiconductors
Opis:
We study stationary solutions of the system $u_t = ∇ ((m-1)/m ∇u^m + u∇φ)$, m => 1, Δφ = ±u, defined in a bounded domain Ω of $ℝ^n$. The physical interpretation of the above system comes from the porous medium theory and semiconductor physics.
Źródło:
Applicationes Mathematicae; 1999, 26, 1; 107-119
1233-7234
Pojawia się w:
Applicationes Mathematicae
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Properties Investigation of the Near-Surface Region in Crystalline Semiconductors Using the Transverse Acoustoelectric Effect
Autorzy:
Pustelny, Tadeusz
Powiązania:
https://bibliotekanauki.pl/articles/31339945.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Czasopisma i Monografie PAN
Tematy:
surface acoustic wave
acoustoelectric effects
electron properties of semiconductors
Opis:
The paper presents the acoustoelectric phenomenon in a layered structure: piezoelectric waveguide – semiconductor. The publication presents an original acoustic method for determining the electrical and electron parameters of the subsurface area in crystalline semiconductors. The method is based on the so-called transverse acoustoelectric effect realized in a layer system: piezoelectric waveguide with Rayleigh surface acoustic wave – semiconductor. The paper discusses the physical foundations of the transverse acoustoelectric effect in the piezoelectric – semiconductor layer system, taking into account the distinctness of the physical properties of the semiconductor near-surface region in relation to its volumetric properties. The work covers many experimental studies of the near-surface region of semiconductors. The original method was presented to determine such surface parameters as: surface potential, surface conductivity, mobility of carriers in the subsurface area, life time of charge carriers in surface states. By means of the acoustic method the following semiconductors have been extensively tested: indium phosphide InP and gallium phosphide GaP. These semiconductors are one of the main semiconductors of group III-V, which are the basis of modern photonics, optoelectronics as well as integrated optics. The work also includes an analysis of the measurement possibilities of the developed acoustic method and its limitations, as well as an analysis of the accuracy of the obtained values of the parameters of the subsurface area of crystalline semiconductors.
Źródło:
Archives of Acoustics; 2022, 47, 4; 565-579
0137-5075
Pojawia się w:
Archives of Acoustics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments
Autorzy:
Procek, M.
Pustelny, T.
Stolarczyk, A.
Maciak, E.
Powiązania:
https://bibliotekanauki.pl/articles/201073.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
zinc oxide
ZnO
flower-like nanostructures
gas sensor
wide gap semiconductors
electric properties of semiconductors
tlenek cynku
kwiatopodobne nanostruktury
czujnik gazu
właściwości elektryczne półprzewodników
Opis:
The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200◦C.
Źródło:
Bulletin of the Polish Academy of Sciences. Technical Sciences; 2014, 62, 4; 635-639
0239-7528
Pojawia się w:
Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implications of the China-Taiwan tensions for the international economic security
Autorzy:
Liber, Janusz
Powiązania:
https://bibliotekanauki.pl/articles/17877204.pdf
Data publikacji:
2023
Wydawca:
Krakowska Akademia im. Andrzeja Frycza Modrzewskiego
Tematy:
China
Taiwan
economic security
supply chain
value chain
semiconductors
Taiwan Strait
Opis:
The economy of Taiwan began to take shape after the occupation of the island by Japan under the peace treaty with the Chinese Qing Empire in 1895. After that, Tokyo began to actively invest in the development of a new territory: railroads, factories and defense enterprises were built. In this way, an industrial base was created that Taiwan uses to this day. After Japan’s defeat in World War II, the island briefly returned to the Republic of China. However, there was a civil war in the country between the communists and nationalists, who rallied around Chiang Kai-shek, who eventually lost and withdrew to Taiwan with his associates. Taipei officially named the new state the “Republic of China” and has declared and continues to declare claims against the entire territory of China. Beijing, on the other hand, regularly declares that Taiwan is part of the People’s Republic of China and has announced its reunification with the “rebellious island”. The article deals with the economic consequences for the world economy resulting from the potential crisis between China and Taiwan. The subject is inspired by the dependence of the economies of many countries, including the United States and the European Union, on products supplied from the region of East Asia, especially by Taiwan, which in the event of a crisis in relations between conflicted countries may create threats to the international economic security.
Źródło:
Bezpieczeństwo. Teoria i Praktyka; 2023, LI, 2; 41-52
1899-6264
2451-0718
Pojawia się w:
Bezpieczeństwo. Teoria i Praktyka
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
3D-AFM Nano-structural Features and Magnetic Properties of Indium-Doped Vanadate Ceramic Ca3-xInxVO8
Autorzy:
Elsabawy, Khaled M.
Powiązania:
https://bibliotekanauki.pl/articles/1186749.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Magnetic properties
SE-microscopy
Semiconductors
Solution route synthesis
X-ray diffraction
Opis:
Doped vanadate ceramics with general formula Ca3-xInxVO8 were synthesized by using two different precursors ( oxalate & citrates) to get maximum homogeneity inside the bulk of the material where x = 0.05 and 0.25 mole. Structural and microstructural properties were monitoring by using both of XRD and SEM evaluating that indium doped - calcium vanadate ceramic has the semiconducting classical doubly perovskite phase as proved in the X-ray diffractogram, grain size of the material bulk was found to be in between 1.57- 2.23 μm which are lower than those reported in literatures .Magnetic measurements indicated that the In- doped- calcium vanadate ceramic exhibits an semiconducting behavior confirming that indium- hole dopings enhance the paramagnetic character and semi-conduction mechanism of the hexagonal perovskite phase. Furthermore 3D-AFM investigations were made to study effect of indium doping on the surface topology and grain size in the material bulk.
Źródło:
World Scientific News; 2016, 32; 48-59
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnO - Wide bandgap semiconductor and possibilities of its application in optical waveguide structures
Autorzy:
Struk, P.
Pustelny, T.
Gołaszewska, K.
Borysiewicz, M. A.
Kamińska, E.
Wojciechowski, T.
Piotrowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/220412.pdf
Data publikacji:
2014
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
Wide band gap oxide semiconductors
ZnO
integrated optics structures
planar waveguides
Opis:
The paper presents the results of investigations concerning the application of zinc oxide - a wideband gap semiconductor in optical planar waveguide structures. ZnO is a promising semiconducting material thanks to its attractive optical properties. The investigations were focused on the determination of the technology of depositions and the annealing of ZnO layers concerning their optical properties. Special attention was paid to the determination of characteristics of the refractive index of ZnO layers and their coefficients of spectral transmission within the UV-VIS-NIR range. Besides that, also the mode characteristics and the attenuation coefficients of light in the obtained waveguide structures have been investigated. In the case of planar waveguides, in which the ZnO layers have not been annealed after their deposition, the values of the attenuation coefficient of light modes amount to a ≈ 30 dB/cm. The ZnO layers deposited on the heated substrate and annealed by rapid thermal annealing in an N2 and O2 atmosphere, are characterized by much lower values of the attenuation coefficients: a ≈ 3 dB/cm (TE0 and TM0 modes). The ZnO optical waveguides obtained according to our technology are characterized by the lowest values of the attenuation coefficients a encountered in world literature concerning the problem of optical waveguides based on ZnO. Studies have shown that ZnO layers elaborated by us can be used in integrated optic systems, waveguides, optical modulators and light sources.
Źródło:
Metrology and Measurement Systems; 2014, 21, 3; 401-412
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Organiczne półprzewodniki - materiały przyszłości?
Organic semiconductors - materials of the future?
Autorzy:
Świst, A.
Sołoducho, J.
Powiązania:
https://bibliotekanauki.pl/articles/1208009.pdf
Data publikacji:
2012
Wydawca:
Stowarzyszenie Inżynierów i Techników Przemysłu Chemicznego. Zakład Wydawniczy CHEMPRESS-SITPChem
Tematy:
organiczne półprzewodniki
rynek wyrobów elektronicznych
OLEDy
organic semiconductors
electronic market
OLEDs
Opis:
Odkrycie przewodnictwa elektrycznego oraz interesujących właściwości optycznych (luminescencji) makrocząsteczek ze sprzężonym układem wiązań ? zrewolucjonizowało elektronikę. Szerokie możliwości aplikacyjne organicznych półprzewodników (m.in. organiczne komórki fotowoltaiczne, biosensory, organiczne diody elektroluminescencyjne, drukowane obwody) sprawiły, że uzyskały one miano "materiałów przyszłości". W artykule przeprowadzono dyskusję czy rzeczywiście przewodzące związki makrocząsteczkowe zasługują na takie określenie, oraz czy mają szansę zdominować rodzime rynki.
The discovery of electrical conductivity and interesting optical properties (luminescence) of macromolecules with conjugated ?-bond system has revolutionized the electronics. Extensive application of organic semiconductors (organic photovoltaic cells, biosensors, organic light emitting diodes, printed circuits) caused that they being named "the materials of the future". In the article was carried out the discussion whether actually conducting macromolecular compounds deserve such a term and will dominate native markets.
Źródło:
Chemik; 2012, 66, 4; 289-296
0009-2886
Pojawia się w:
Chemik
Dostawca treści:
Biblioteka Nauki
Artykuł
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