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Wyszukujesz frazę "MOS structure" wg kryterium: Temat


Wyświetlanie 1-2 z 2
Tytuł:
An accurate prediction of high-frequency circuit behaviour
Autorzy:
Yoshitomi, S.
Kimijima, H.
Kojima, K.
Kokatsu, H.
Powiązania:
https://bibliotekanauki.pl/articles/308807.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
electro-magnetic simulation
SPICE
circuit test structure
RF CMOS
EKV2.6-MOS model
spiral inductor
CMOS VCO
Opis:
An accurate way to predict the behaviour of an RF analogue circuit is presented. A lot of effort is required to eliminate the inaccuracies that may generate the deviation between simulation and measurement. Efficient use of computer-aided design and incorporation of as many physical effects as possible overcomes this problem. Improvement of transistor modelling is essential, but there are many other unsolved problems affecting the accuracy of RF analogue circuit modelling. In this paper, the way of selection of accurate transistor model and the extraction of parasitic elements from the physical layout, as well as implementation to the circuit simulation will be presented using two CMOS circuit examples: an amplifier and a voltage controlled oscillator (VCO). New simulation technique, electro-magnetic (EM)-co-simulation is introduced.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 47-62
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Variability of the local phi MS values over the gate area of MOS devices
Autorzy:
Przewłocki, H. M.
Kudła, A.
Brzezińska, D.
Massoud, H. Z.
Powiązania:
https://bibliotekanauki.pl/articles/308803.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
MOS structure
photoelectric measurements
electrical parameters
mechanical stress
Opis:
The local value distributions of the effective contact potential difference (ECPD or the phi MS factor) over the gate area of Al-SiO2-Si structures were investigated for the first time. A modification of the photoelectric phi MS measurement method was developed, which allows determination of local values of this parameter in different parts of metaloxide-semiconductor (MOS) structures. It was found that the phi MS distribution was such, that its values were highest far away from the gate edge regions (e.g., in the middle of a square gate), lower in the vicinity of gate edges and still lower in the vicinity of gate corners. These results were confirmed by several independent photoelectric and electrical measurement methods. A model is proposed of this distribution in which the experimentally determined phi MS (x; y) distributions, found previously, are attributed to mechanical stress distributions in MOS structures. Model equations are derived and used to calculate phi MS (x; y) distributions for various structures. Results of these calculations remain in agreement with experimentally obtained distributions. Comparison of various characteristics calculated using the model with the results of photoelectric and electrical measurements of a wide range of Al-SiO2-Si structures support the validity of the model.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 34-44
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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