- Tytuł:
- Comparison of gate leakage current components in metal-insulator-semiconductor structures with high-k gate dielectris
- Autorzy:
-
Janik, T.
Jakubowski, A.
Majkusiak, B.
Korwin-Pawłowski, M. - Powiązania:
- https://bibliotekanauki.pl/articles/308423.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
MIS structures
ultrathin dielectrics
high-k dielectrics - Opis:
- Numerical simulations of the gate leakage current in metal-insulator-semiconductor (MIS) structures based on the transfer matrix approach were carried out. They show contribution of different components of this current in MIS structures with best known high-k dielectrics such as Ta2O5 and TiO2. The comparison of the gate leakage current in MIS structures with SiO2 layer as well Ta2O5 and TiO2 layers is presented as well. Additionally, the minimum Si electron affinity to a gate dielectric which allows to preserve given level of the gate leakage current is proposed.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 65-69
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł