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Wyszukujesz frazę "I-V" wg kryterium: Temat


Tytuł:
Influence of Multiple Cleaning on the Detection Capabilities of ISFET Structures
Autorzy:
Kondracka, Kinga
Firek, Piotr
Grodzik, Marta
Szmidt, Maciej
Sawosz-Chwalibóg, Ewa
Szmidt, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1844597.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ISFET
sensor
I-V characteristics
cells
cleaning
Opis:
The Internet of Vehicles (IoVs) has become a vital research area in order to enhance passenger and road safety, increasing traffic efficiency and enhanced reliable connectivity. In this regard, for monitoring and controlling the communication between IoVs, routing protocols are deployed. Frequent changes that occur in the topology often leads to major challenges in IoVs, such as dynamic topology changes, shortest routing paths and also scalability. One of the best solutions for such challenges is “clustering”. This study focuses on IoVs’ stability and to create an efficient routing protocol in dynamic environment. In this context, we proposed a novel algorithm called Cluster-based enhanced AODV for IoVs (AODV-CD) to achieve stable and efficient clustering for simplifying routing and ensuring quality of service (QoS). Our proposed protocol enhances the overall network throughput and delivery ratio, with less routing load and less delay compared to AODV. Thus, extensive simulations are carried out in SUMO and NS2 for evaluating the efficiency of the AODV-CD that is superior to the classic AODV and other recent modified AODV algorithms.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 1; 23-28
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunneling throught a barrier under transverse magnetic field and I-V characteristic
Autorzy:
Papadopoulos, George J.
Powiązania:
https://bibliotekanauki.pl/articles/1955281.pdf
Data publikacji:
2018
Wydawca:
Politechnika Gdańska
Tematy:
transmission coefficient
momentum-like quantity
I-V characteristic
Opis:
The case whereby the transmission coefficient through a barrier, sandwiched by semiconductor reservoirs, under bias is provided by a general formula involving the logarith micwave function derivative at the barrier entrance is now extended to include the influence of magnetic field perpendicular to the longitudinal barrier direction. Under the circumstances, theequation governing the logarithmic wave function derivative is appropriately modified via aneffective potential energy which takes account of the magnetic field. Subsequently, the procedurefor obtaining the transmission coefficient is applied to the case involving a smooth double, as wellas quadruple, barrier for which theI-V characteristic is obtained. The results show reduction incurrent with increase in the magnetic field, up to a certain value of bias. Furthermore, increasein temperature exhibits increase in current as well as movement of the current peaks in the I-V curves towards lower bias.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2018, 22, 2; 125-133
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Austriacki telegraf kolejowy systemu Aleksandra Baina
Austrian railway telegraph by Alexander Bain
Autorzy:
Dąbrowski, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/1399948.pdf
Data publikacji:
2021-06-30
Wydawca:
Polska Akademia Nauk. Instytut Historii Nauki im. Ludwika i Aleksandra Birkenmajerów
Tematy:
C.K. Telegraf Państwowy
kod I–V
telegraf I–V
telegraf Baina
telegraf kolejowy
Kolej Północna
Alexander Bain
Andreas Baumgartner
Johann Michael Ekling
Carl August von Steinheil
Imperial–Royal State Telegraph
I–V code
I–V telegraph
Bain telegraph
railway telegraph
Northern Railway
Opis:
The article presents the history and development of telegraphs invented by the Scottish inventor and engineer Alexander Bain. The telegraph and its subsequent versions were known as I–V telegraphs. They were created before the invention of the Morse telegraph and were soon replaced by it, as they were considerably slower in transmitting the messages. One of the variants of I–V telegraphs was used in Austrian railways between the years 1846 and 1850. On the Northern Railway (Kaiser-Ferdinands-Nordbahn), including on the route from Vienna to Bohumín, Bain telegraphs remained in use until 1886.
Źródło:
Analecta. Studia i Materiały z Dziejów Nauki; 2021, 30, 1; 89-102
1509-0957
Pojawia się w:
Analecta. Studia i Materiały z Dziejów Nauki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:
Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:
https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818204.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Behavioral characteristics of photovoltaic cell with different irradiation in Matlab/Simuling/Simscape environment
Autorzy:
Usman, H.
Lawal, S. M.
Shehu, R. S.
Powiązania:
https://bibliotekanauki.pl/articles/412229.pdf
Data publikacji:
2014
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
photovoltaic
irradiant
temperature
V-I and P-V curves
Opis:
Photovoltaic technology is one of the fastest growing energy among the different type of renewable energies that are available for electricity generation. This is due to the availability of the natural sun rise, and the non polluted energy that is free from emission of carbon dioxide (CO2). This paper presents a typical modeling of photovoltaic cell under different irradiations level, in order to monitor the behavior of the (Voltage-Current) V-I and (Power-Voltage) P-V characteristics. The simulation of the proposed model was performed in MATLAB/SIMULINK and Simscape environment. Single diode model of the PV system was presented in the mathematical modeling of the proposed system. Simulation results of different I-V and P-V characteristics were also presented.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 316-326
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818207.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of single-diode models applied to thin film PV module operating under different environmental conditions
Autorzy:
Gulkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1940695.pdf
Data publikacji:
2017
Wydawca:
Politechnika Gdańska
Tematy:
solar energy
photovoltaics
I-V electrical characteristics
computational modeling
Opis:
The electrical current-voltage (I-V) characteristic a of photovoltaic (PV) module depends on the environmental conditions under which it operates. The shape of the I-V curve depends on the solar cell technology and changes dynamically in time with irradiance and temperature. A simulation model of the PV module can be used to examine the dynamic behavior of the I-V curve as well as to extract the module parameters from the curves. This paper presents the results of comparison of two different models based on a single-diode equivalent circuit applied to a thin film module. The Matlab/Simulink simulation studies of I-V characteristic curves in the function of irradiance and temperature were carried out. The results were compared with the experimental data of the I-V curves obtained from outdoor measurements. Relative errors of the simulation and experimental results were analyzed.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2017, 21, 1; 43-52
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Autorzy:
Manyk, Tetiana
Rutkowski, Jarosław
Madejczyk, Paweł
Gawron, Waldemar
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2074201.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
HgCdTe
MWIR detectors
dark current
I-V characteristics
recombination
Opis:
A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141596
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the capacity of solar cells under partial shading conditions
Autorzy:
Bartczak, Mateusz
Powiązania:
https://bibliotekanauki.pl/articles/2081489.pdf
Data publikacji:
2021
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
MPPT
PSC
partial shading
I-V curve
solar capacitance
solar cell model
częściowe zacienienie
krzywa I-V
pojemność ogniw fotowoltaicznych
jednodiodowy model ogniwa fotowoltaicznego
Opis:
O pojemności ogniw fotowoltaicznych w warunkach częściowego zaciemnienia
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2021, 11, 4; 47-50
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł

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