Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "I-V" wg kryterium: Temat

  Lista filtrów

Dostawca treści

Podbaza

Wyrównaj
Wyświetlanie 1-15 z 422
Tytuł:
Influence of Multiple Cleaning on the Detection Capabilities of ISFET Structures
Autorzy:
Kondracka, Kinga
Firek, Piotr
Grodzik, Marta
Szmidt, Maciej
Sawosz-Chwalibóg, Ewa
Szmidt, Jan
Powiązania:
https://bibliotekanauki.pl/articles/1844597.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
ISFET
sensor
I-V characteristics
cells
cleaning
Opis:
The Internet of Vehicles (IoVs) has become a vital research area in order to enhance passenger and road safety, increasing traffic efficiency and enhanced reliable connectivity. In this regard, for monitoring and controlling the communication between IoVs, routing protocols are deployed. Frequent changes that occur in the topology often leads to major challenges in IoVs, such as dynamic topology changes, shortest routing paths and also scalability. One of the best solutions for such challenges is “clustering”. This study focuses on IoVs’ stability and to create an efficient routing protocol in dynamic environment. In this context, we proposed a novel algorithm called Cluster-based enhanced AODV for IoVs (AODV-CD) to achieve stable and efficient clustering for simplifying routing and ensuring quality of service (QoS). Our proposed protocol enhances the overall network throughput and delivery ratio, with less routing load and less delay compared to AODV. Thus, extensive simulations are carried out in SUMO and NS2 for evaluating the efficiency of the AODV-CD that is superior to the classic AODV and other recent modified AODV algorithms.
Źródło:
International Journal of Electronics and Telecommunications; 2021, 67, 1; 23-28
2300-1933
Pojawia się w:
International Journal of Electronics and Telecommunications
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tunneling throught a barrier under transverse magnetic field and I-V characteristic
Autorzy:
Papadopoulos, George J.
Powiązania:
https://bibliotekanauki.pl/articles/1955281.pdf
Data publikacji:
2018
Wydawca:
Politechnika Gdańska
Tematy:
transmission coefficient
momentum-like quantity
I-V characteristic
Opis:
The case whereby the transmission coefficient through a barrier, sandwiched by semiconductor reservoirs, under bias is provided by a general formula involving the logarith micwave function derivative at the barrier entrance is now extended to include the influence of magnetic field perpendicular to the longitudinal barrier direction. Under the circumstances, theequation governing the logarithmic wave function derivative is appropriately modified via aneffective potential energy which takes account of the magnetic field. Subsequently, the procedurefor obtaining the transmission coefficient is applied to the case involving a smooth double, as wellas quadruple, barrier for which theI-V characteristic is obtained. The results show reduction incurrent with increase in the magnetic field, up to a certain value of bias. Furthermore, increasein temperature exhibits increase in current as well as movement of the current peaks in the I-V curves towards lower bias.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2018, 22, 2; 125-133
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Austriacki telegraf kolejowy systemu Aleksandra Baina
Austrian railway telegraph by Alexander Bain
Autorzy:
Dąbrowski, Krzysztof
Powiązania:
https://bibliotekanauki.pl/articles/1399948.pdf
Data publikacji:
2021-06-30
Wydawca:
Polska Akademia Nauk. Instytut Historii Nauki im. Ludwika i Aleksandra Birkenmajerów
Tematy:
C.K. Telegraf Państwowy
kod I–V
telegraf I–V
telegraf Baina
telegraf kolejowy
Kolej Północna
Alexander Bain
Andreas Baumgartner
Johann Michael Ekling
Carl August von Steinheil
Imperial–Royal State Telegraph
I–V code
I–V telegraph
Bain telegraph
railway telegraph
Northern Railway
Opis:
The article presents the history and development of telegraphs invented by the Scottish inventor and engineer Alexander Bain. The telegraph and its subsequent versions were known as I–V telegraphs. They were created before the invention of the Morse telegraph and were soon replaced by it, as they were considerably slower in transmitting the messages. One of the variants of I–V telegraphs was used in Austrian railways between the years 1846 and 1850. On the Northern Railway (Kaiser-Ferdinands-Nordbahn), including on the route from Vienna to Bohumín, Bain telegraphs remained in use until 1886.
Źródło:
Analecta. Studia i Materiały z Dziejów Nauki; 2021, 30, 1; 89-102
1509-0957
Pojawia się w:
Analecta. Studia i Materiały z Dziejów Nauki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:
Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:
https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:
2005
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:
Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:
Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818204.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Behavioral characteristics of photovoltaic cell with different irradiation in Matlab/Simuling/Simscape environment
Autorzy:
Usman, H.
Lawal, S. M.
Shehu, R. S.
Powiązania:
https://bibliotekanauki.pl/articles/412229.pdf
Data publikacji:
2014
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
photovoltaic
irradiant
temperature
V-I and P-V curves
Opis:
Photovoltaic technology is one of the fastest growing energy among the different type of renewable energies that are available for electricity generation. This is due to the availability of the natural sun rise, and the non polluted energy that is free from emission of carbon dioxide (CO2). This paper presents a typical modeling of photovoltaic cell under different irradiations level, in order to monitor the behavior of the (Voltage-Current) V-I and (Power-Voltage) P-V characteristics. The simulation of the proposed model was performed in MATLAB/SIMULINK and Simscape environment. Single diode model of the PV system was presented in the mathematical modeling of the proposed system. Simulation results of different I-V and P-V characteristics were also presented.
Źródło:
International Letters of Chemistry, Physics and Astronomy; 2014, 17, 3; 316-326
2299-3843
Pojawia się w:
International Letters of Chemistry, Physics and Astronomy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
Autorzy:
Kopytko, Małgorzata
Gomółka, Emilia
Manyk, Tetiana
Michalczewski, Krystian
Kubiszyn, Łukasz
Rutkowski, Jaroslaw
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/1818207.pdf
Data publikacji:
2021
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
infrared detector
T2SLs
superlattice
III-V materials
I-V characteristics
Opis:
Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
Źródło:
Opto-Electronics Review; 2021, 29, 1; 1--4
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of single-diode models applied to thin film PV module operating under different environmental conditions
Autorzy:
Gulkowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1940695.pdf
Data publikacji:
2017
Wydawca:
Politechnika Gdańska
Tematy:
solar energy
photovoltaics
I-V electrical characteristics
computational modeling
Opis:
The electrical current-voltage (I-V) characteristic a of photovoltaic (PV) module depends on the environmental conditions under which it operates. The shape of the I-V curve depends on the solar cell technology and changes dynamically in time with irradiance and temperature. A simulation model of the PV module can be used to examine the dynamic behavior of the I-V curve as well as to extract the module parameters from the curves. This paper presents the results of comparison of two different models based on a single-diode equivalent circuit applied to a thin film module. The Matlab/Simulink simulation studies of I-V characteristic curves in the function of irradiance and temperature were carried out. The results were compared with the experimental data of the I-V curves obtained from outdoor measurements. Relative errors of the simulation and experimental results were analyzed.
Źródło:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2017, 21, 1; 43-52
1428-6394
Pojawia się w:
TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The determination of the carriers recombination parameters based on the HOT HgCdTe current-voltage characteristics
Autorzy:
Manyk, Tetiana
Rutkowski, Jarosław
Madejczyk, Paweł
Gawron, Waldemar
Martyniuk, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/2074201.pdf
Data publikacji:
2022
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
HgCdTe
MWIR detectors
dark current
I-V characteristics
recombination
Opis:
A theoretical analysis of the mid-wavelength infrared range detectors based on the HgCdTe materials for high operating temperatures is presented. Numerical calculations were compared with the experimental data for HgCdTe heterostructures grown by the MOCVD on the GaAs substrates. Theoretical modelling was performed by the commercial platform SimuAPSYS (Crosslight). SimuAPSYS fully supports numerical simulations and helps understand the mechanisms occurring in the detector structures. Theoretical estimates were compared with the dark current density experimental data at the selected characteristic temperatures: 230 K and 300 K. The proper agreement between theoretical and experimental data was reached by changing Auger-1 and Auger-7 recombination rates and Shockley-Read-Hall carrier lifetime. The level of the match was confirmed by a theoretical evaluation of the current responsivity and zero-bias dynamic resistance area product (R0A) of the tested detectors.
Źródło:
Opto-Electronics Review; 2022, 30, 2; art. no. e141596
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the capacity of solar cells under partial shading conditions
Autorzy:
Bartczak, Mateusz
Powiązania:
https://bibliotekanauki.pl/articles/2081489.pdf
Data publikacji:
2021
Wydawca:
Politechnika Lubelska. Wydawnictwo Politechniki Lubelskiej
Tematy:
MPPT
PSC
partial shading
I-V curve
solar capacitance
solar cell model
częściowe zacienienie
krzywa I-V
pojemność ogniw fotowoltaicznych
jednodiodowy model ogniwa fotowoltaicznego
Opis:
O pojemności ogniw fotowoltaicznych w warunkach częściowego zaciemnienia
Źródło:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska; 2021, 11, 4; 47-50
2083-0157
2391-6761
Pojawia się w:
Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical characterization of ISFETs
Autorzy:
Tomaszewski, D.
Yang, C. M.
Jaroszewicz, B.
Zaborowski, M.
Grabiec, P.
Pijanowska, D.
Powiązania:
https://bibliotekanauki.pl/articles/308663.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
ISFET
CMOS
electrical measurements
I-V characteristics
characterization
parameters extraction
Opis:
Methodology of electrical characterization of ISFETs has been described. It is based on a three-stage approach. First, electrical measurements of ISFET-like MOSFETs and extraction of basic parameters of the MOSFET compact model are performed. Next, mapping of the ISFET channel conductances and a number of other characteristic parameters is carried out using a semi-automatic testing setup. Finally, ISFET sensitivity to solution pH is evaluated. The methodology is applied to characterize ISFETs fabricated in the Institute of Electron Technology (IET).
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 55-60
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of external conditions on parameters of silicon solar cells
Wpływ warunków zewnętrznych na parametry krzemowych ogniw słonecznych
Autorzy:
Swatowska, B.
Stapiński, T.
Powiązania:
https://bibliotekanauki.pl/articles/192322.pdf
Data publikacji:
2010
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Technologii Materiałów Elektronicznych
Tematy:
krzemowe ogniwo słoneczne
charakterystyka I-V
model dwudiodowy
sprawność ogniwa słonecznego
silicon solar cell
I-V characteristic
two diod model
efficiency of solar cell
Opis:
Praca skupia się na badaniu wpływu zmian temperatury zewnętrznej oraz stopnia zacienienia powierzchni ogniw słonecznych na ich parametry elektryczne. Charakterystyki prądowo-napięciowe I-V ogniw słonecznych na bazie krzemu multikrystalicznego były wyznaczone przy oświetleniu AM 1.5 za pomocą urządzenia sterowanego komputerowo I-V Curve Tracer For Solar Cells Qualification. Poprzez zastosowanie elektrycznego modelu dwudiodowego, pomiary charakterystyk I-V ogniw pozwoliły określić sprawność ogniw oraz ich prąd zwarcia i napięcie obwodu otwartego. Pomiary temperaturowe przeprowadzono w zakresie od 5 do 55 °C, przy stałym i równomiernym oświetleniu całej powierzchni ogniw. Zmienny stopień zacienienia powierzchni ogniw miał bardzo istotny wpływ na ich parametry elektryczne. Obniżenie sprawności ogniw słonecznych wraz z temperaturą oraz stopniem zacienienia jest czynnikiem bardzo istotnym przy optymalizacji warunków pracy systemów fotowoltaicznych.
The purpose of the work is the investigation of influence of rapid change of temperature and the shadowing of light on silicon solar cells operation. Current-voltage characteristics for multicrystalline silicon solar cells were measured by the use of computer controlled global spectrum sun simulator under an AM 1.5. The measurements of I-V characteristics allow the determination of basic electrical parameters and efficiency using the double exponential relationship from two-diode solar cells model. Temperature measurements were carried out in the temperature range from 5 to 55 °C under constant irradiance. Under changeable area of illumination of solar cells was also observed the variation of their parameters. The rate of decrease of solar cells efficiency with temperature and shadowing area are important to estimate optimal working conditions of PV systems.
Źródło:
Materiały Elektroniczne; 2010, T. 38, nr 1, 1; 13-16
0209-0058
Pojawia się w:
Materiały Elektroniczne
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Technology of MISFET with SiO2/BaTiO3 System as a Gate Insulator
Autorzy:
Firek, P.
Szmidt, J.
Powiązania:
https://bibliotekanauki.pl/articles/308257.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
barium titanate
I-V characteristics
MISFET structures
radio frequency plasma sputtering
Opis:
The properties of barium titanate (BaTiO3, BT), such as high dielectric constant and resistivity, allow it to find numerous applications in the field of microelectronics. In this work silicon metal-insulator-semiconductor field effect transistor (MISFET) structures with BaTiO3 thin films (containing La2O3 admixture) acting as gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO3 + La2O3 (2% wt.) target. In the paper transfer and output I-V, transconductance and output conductance characteristics of the obtained transistors are presented and discussed. Basic parameters of these devices, such as threshold voltage (VTH) are determined and discussed.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 4; 61-64
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Partial Shading Detection in Solar System Using Single Short Pulse of Load
Autorzy:
Bartczak, M.
Powiązania:
https://bibliotekanauki.pl/articles/221207.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
maximum power point
partial shading
load pulse
test station
I-V curve
Opis:
A single photovoltaic panel under uniform illumination has only one global maximum power point, but the same panel in irregularly illuminated conditions can have more maxima on its power-voltage curve. The irregularly illuminated conditions in most cases are results of partial shading. In the work a single short pulse of load is used to extract information about partial shading. This information can be useful and can help to make some improvements in existing MPPT algorithms. In the paper the intrinsic capacitance of a photovoltaic system is used to retrieve occurrence of partial shading.
Źródło:
Metrology and Measurement Systems; 2017, 24, 1; 193-199
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of noise and non-linearity of I-V characteristics of positive temperature coefficient chip thermistors
Autorzy:
Sita, Z.
Sedlakova, V.
Majzner, J.
Sedlak, P.
Sikula, J.
Grmela, L.
Powiązania:
https://bibliotekanauki.pl/articles/220721.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
PTC chip sensors
noise spectroscopy
I-V characteristic non-linearity
quality evaluation
Opis:
Noise spectroscopy and I-V characteristic non-linearity measurement were applied as diagnostic tools in order to characterize the volume and contact quality of positive temperature coefficient (PTC) chip sensors and to predict possible contact failure. Correctly made and stable contacts are crucial for proper sensing. I-V characteristics and time dependences of resistance were measured for studied sensors and, besides the samples with stable resistance value, spike type resistance fluctuation was observed for some samples. These spikes often disappear after about 24 hours of voltage application. Linear I-V characteristics were measured for the samples with stable resistance. The resistance fluctuation of burst noise type was observed for some samples showing the I-V characteristic dependent on the electric field orientation. We have found that the thermistors with high quality contacts had a linear I-V characteristic, the noise spectral density is of 1/f type and the third harmonic index is lower than 60 dB. The samples with poor quality contacts show non-linear I-V characteristics and excess noise is given by superposition of g-r and 1/fn type noises, and the third harmonic index is higher than 60 dB.
Źródło:
Metrology and Measurement Systems; 2013, 20, 4; 635-644
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 422

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies