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Wyświetlanie 1-15 z 119
Tytuł:
Hot-Electron Effects in High-Resistivity InSb
Autorzy:
Ašmontas, S.
Subačius, L.
Valušis, G.
Powiązania:
https://bibliotekanauki.pl/articles/1929737.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
We report that in the presence of random potential of the conduction band hot-electron transport can exhibit some novel features, some of which can be observed in dependencies of electric conductivity, mean electron energy and noise temperature on electric field strength.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 717-720
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Temperature in Semi-Insulating GaAs for Low Electric Fields
Autorzy:
Zduniak, A.
Łusakowski, J.
Nowak, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923732.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Heating of electrons by electric fields smaller than that required for generation of domain oscillations was investigated in samples of EL2-rich semi-insulating GaAs. Current-voltage characteristics were measured as a function of temperature between 268 K and 330 K. They exhibit a sublinear shape which is interpreted as a result of an enhanced electron capture on the EL2. The capture rate and the electron temperature as a function of the electric field was determined. A fitting procedure gave the value of electron capture cross-section on the EL2 to be 2.7 × 10$\text{}^{-13}$ cm$\text{}^{2}$ which agrees with literature data.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 777-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron-Electron Scattering Influence on Hot Electron Transport in Semiconductors
Autorzy:
Dedulewicz, S.
Kancleris, Ž.
Powiązania:
https://bibliotekanauki.pl/articles/1890875.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Electron-electron scattering has been shown to manifest itself when scattering by optical phonons is of importance. The strongest influence has been observed in the slightly heated electron system at the lattice temperature T ≈ T$\text{}_{0}$/5 (T$\text{}_{0}$ being the characteristic temperature of optical phonon).
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 353-356
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Coupling of Oscillatory Modes in Current Flow in Semi-Insulating GaAs
Autorzy:
Karpińska, K.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1891273.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
Opis:
Spontaneous current oscillations in semi-insulating (SI) GaAs sample caused by high electric field domains nucleation were perturbed by modulated illumination. Coupling between domain and photocurrent oscillations leads to quasiperiodic and frequency-locked behaviour. The observed Arnol'd tongues structure follows the Farey tree ordering and agrees with predictions of the circle map theory. We also suggest a possible mechanism responsible for the coupling of the modes.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 425-428
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Product and process innovation patterns in Polish low and high technology systems
Autorzy:
Dzikowski, Piotr
Powiązania:
https://bibliotekanauki.pl/articles/22443139.pdf
Data publikacji:
2022
Wydawca:
Instytut Badań Gospodarczych
Tematy:
innovation
LMT
HT
system
technology
Opis:
Research background: While the Sectoral Innovation System (SSI) anticipates technology-related similarities in innovation patterns in the same sectors across countries, the distance to the frontier suggests that there are important differences with respect to the level of national technological development. Most contemporary analyses of sectoral innovation systems are focused on well-developed economies. In contrast, the evidence from developing countries including new EU members are scared and lack dynamics. Purpose of the article: The purpose of this paper is to identify and compare product and process innovation patterns in Polish low and high technology systems. The main assumption is that divergence and convergence in innovation patterns of low- and medium-low technology (LMT) and high technology (HT) systems evolve over time and are strongly influenced by the characteristics of firms, their linkages with other system participants, existing demand, and institutional conditions. Methods: According to the third edition of the Oslo Manual (OECD, 2005), we employ a harmonized questionnaire and methodology to collect unique micro data on innovation.  The survey concerns 5252 firms including 873 firms from HT sector. The scope of the research relates to product and process innovation at least new to the firm. Findings & value added: Our results show that although the intensity of product and process innovation is higher in HT system, both business support institutions and public financial instruments better support firms in LMT sectors. On the other hand, existing demand and market structure favor the emergence of new innovations at the firm level (imitations), but with more emphasis on LMT. The key source of innovation is suppliers, with foreign suppliers in HT and national ones in LMT. In contrast to leading economies, LMT plays a key role in long term economic growth in Poland.
Źródło:
Equilibrium. Quarterly Journal of Economics and Economic Policy; 2022, 17, 3; 747-773
1689-765X
2353-3293
Pojawia się w:
Equilibrium. Quarterly Journal of Economics and Economic Policy
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating
Autorzy:
Subačius, L.
Kašalynas, I.
Powiązania:
https://bibliotekanauki.pl/articles/1179478.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
72.20.Ht
Opis:
Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 275-279
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel
Autorzy:
Gružinskis, V.
Shiktorov, P.
Starikov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1505736.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
Opis:
Electron transport and drain current noise in field effect transistor with $n^+$ $nn^+$ InP channel have been studied by Monte Carlo particle simulation which simultaneously solves the Boltzmann transport and pseudo-2D Poisson equations. It is shown that at gate voltages giving excess electron concentration in n-region of channel the drain current self-oscillations in THz frequency range are possible. The self-oscillations are driven by electron plasma instability.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 215-217
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
Autorzy:
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929652.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 555-558
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Non-Activated Conductivity of Hot Electrons in Localization Regime
Autorzy:
Łuskowski, J.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1932092.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.20.My
Opis:
Temperature (T) dependence of conductivity (σ) was studied in semi-insulating GaAs as a function of the magnetic field (B) for 1.8 K < T < 40 K for high electric fields. An infrared illumination of a sample and application of an electric field caused a non-equilibrium distribution of electrons in the conduction band. An increase in B caused a localization transition which manifested itself by a gradual disappearance of the impact ionization of shallow bound states. The transition was connected with a change from a non-activated to an activated conductivity only if T > 4 K, otherwise σ showed only a non-activated character. It is proposed that for T < 4 K the electron distribution function is mostly determined by optical and electric field excitations, which results in a non-activated conductivity. For T > 4 K thermal excitations become dominant which leads to an activated character of σ.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 253-256
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Impact Ionization of Shallow Donors on Luminescence in GaAs
Autorzy:
Wysmołek, A.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1932094.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
72.20.Ht
Opis:
Luminescence spectra of n-type molecular beam epitaxial layer and semi-insulating liquid encapsulated Czochralski grown bulk GaAs were measured at liquid helium temperature for zero electric field and for fields which caused impact ionization of shallow donors. Application of the electric field caused a decrease in the luminescence intensity and a broadening of all observed structures. It was found that the electric field changed the luminescence spectrum of the n-type material in a different way than it did in the case of the semi-insulating one. For the n-type sample, an intensity of excitonic lines decreased much more than that of donor-acceptor lines when the electric field grew. A contrary was observed for the semi-insulating sample. An explanation of the result is proposed which takes into account an influence of ionised impurity scattering and localization in fluctuations of the electrostatic potential on the luminescence process.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 261-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductivity of Optically Excited Electrons in GaAs in Quantizing Magnetic Fields
Autorzy:
Łusakowski, J.
Grynberg, M.
Huant, S.
Powiązania:
https://bibliotekanauki.pl/articles/1876263.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Hy
72.20.Ht
Opis:
Magnetoconductivity (σ) measurements on an n-type molecular beam epitaxy grown epitaxial layer and on a bulk liquid encapsulated Czochralski grown undoped semi-insulating GaAs samples were performed for magnetic fields (B) up to 21 T at 4.2 K. To enable current measurements in a wide range of B both samples were permanently illuminated with a band-to-band light. It is shown that for sufficiently high magnetic fields σ(B) dependence is the same for both materials. This result underlines a role of scattering by long-range fluctuations of the electrostatic potential in high-quality n-GaAs in quantizing magnetic fields.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 482-486
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
XANES Study of La$\text{}_{0.75-x}$Gd$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3-δ}$ Solid Solutions
Autorzy:
Drozd, V. A.
Pęka̶a, M.
Liu, R. S.
Lee, J.-F.
Chen, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2046755.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Lx
61.10.Ht
Opis:
A series of solid solutions La$\text{}_{0. 75-x}$Gd$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3-δ}$ with 0.0≤x≤0.75 was prepared via carbonate precursor precipitation method. Final sintering was performed at 1250ºC in oxygen flow atmosphere. The samples obtained were characterized by scanning electron microscope, X-ray diffraction measurements. Oxygen stoichiometry was analyzed by iodometric titration method. X-ray absorption spectroscopic methods of Mn L-edge and Mn K-edge X-ray absorption near edge structure were used to study oxidation state of manganese in the solid solutions and elucidate features of their local crystal structure. Orthorhombic crystal structure characteristics of the solid solutions were refined by Rietveld method. An increase in oxygen deficiency and average manganese oxidation state were found to accompany Gd concentration increase in La$\text{}_{0.75-x}$Gd$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3-δ}$. These results are consistent with Mn L-edge X-ray absorption near edge structure spectra, where a gradual change of Mn oxidation state with Gd concentration increase was detected. Origins of oxygen deficiency La$\text{}_{0.75- x}$Gd$\text{}_{x}$Ca$\text{}_{0.25}$MnO$\text{}_{3-δ}$ are discussed in terms of structural disorder caused by Gd substitution for La.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 583-589
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant State of 4f$\text{}^{14}\text{}^{/}\text{}^{13}$ Yb Ion in Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te
Autorzy:
Grodzicka, E.
Dobrowolski, W.
Story, T.
Slynko, E. T.
Vygranenko, Yu.K.
Willekens, M. M. H.
Swagten, H. J. M.
de Jonge, W. J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1950801.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
75.20.Ck
Opis:
The study of transport and of magnetic properties of Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te:Yb mixed crystals (0 ≤ x ≤ 0.04) is reported. It is shown that Yb forms a donor state resonant with the PbTe valence band. The donor state position may be tuned (shifted relative to the energy gap) by admixture of Ge. The properties of the Yb ion in the Pb$\text{}_{1-x}$Ge$\text{}_{x}$Te matrix makes the system unique from the point of view of magnetic properties. It is demonstrated that the change of the conductivity type from p to n induces transitions from the paramagnetic state to the diamagnetic one.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 801-804
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:
Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Corner Dissipation in Quantum Hall Systems
Autorzy:
Riess, J.
Magyar, P.
Powiązania:
https://bibliotekanauki.pl/articles/1929622.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Lh
72.20.Ht
Opis:
A description of the onset of dissipation in the integer quantum Hall effect is given, where the electric field across the sample is expressed through a time dependent vector potential. This brings the essentially time dependent, non-stationary nature of the problem into focus. The electric field induces transitions between the levels of the disorder broadened Landau band. Above a critical electric field the particles are driven upwards in energy space beyond the Fermi level, which leads to dissipation since the accumulated energy is lost to the heat bath after τ$\text{}_{in}$, the time between two inelastic events. Thus the dissipated power is obtained without the use of the traditional (linear response) transport formulae. As an application we investigate the dissipation in the corner region of a Hall bar. The results are in reasonable accordance with recent experiments exploiting the fountain pressure effect.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 523-526
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 119

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