- Tytuł:
- Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
- Autorzy:
-
Anisimovas, F.
Butkutė, R.
Devenson, J.
Maneikis, A.
Stankevič, V.
Pyragas, V.
Vengalis, B. - Powiązania:
- https://bibliotekanauki.pl/articles/1813391.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.30.+h
73.43.Qt
75.47.Lx
81.15.Fg - Opis:
- We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 997-1000
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł