Temat: GaAs crystals - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Surface structure changes of InP and GaAs single crystals irradiated with high energy electrons and swift heavy ions
Autorzy:: Didyk, A.
Komarov, F.
Vlasukova, L.
Yuvchenko, V.
Hofman, A.
Powiązania:: https://bibliotekanauki.pl/articles/147490.pdf
Data publikacji:: 2006
Wydawca:: Instytut Chemii i Techniki Jądrowej
Tematy:: InP crystals
GaAs crystals
preliminary disorder
swift ion irradiation
surface topography
macrodefect
Opis:: InP and GaAs crystal structure changes under the influence of swift Kr and Bi ions have been studied by means of scanning electron microscopy, atomic force microscopy and selective chemical etching. The previous disordering of samples by electron irradiation has shown to lead to macrodefect formation in the form of cracks and breaks, at the depths near the ion end-of-range, and on the crystal surface. A possible explanation of the observed effects is proposed.
Źródło:: Nukleonika; 2006, 51, 2; 105-109
0029-5922
1508-5791
Pojawia się w:: Nukleonika
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Nonlinear optical properties of photonic crystals
Autorzy:: Fernando, M. G. Pravini S.
Wijewardena Gamalath, K. A. I. L.
Powiązania:: https://bibliotekanauki.pl/articles/1177892.pdf
Data publikacji:: 2018
Wydawca:: Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:: AlGaAs
All-optical switch
FDTD
GaAs
Ge
Kerr nonlinearity
Limiter
Photonic crystals
ZnS
side coupled Micro cavities
Opis:: A model for optical switching and limiting in 2D photonic crystals of square and hexagonal lattice structures having Kerr nonlinearity is introduced with a side-coupled cavity and a waveguide. MATLAB was used to implement FDTD algorithm with perfectly matched layer boundaries. Photonic crystals formed from AlGaAs, GaAs, ZnS and Ge, rods in air were simulated to obtain the optimal parameters. The best refractive index range for the proposed switch and the limiter to be operated is 2.5 to 3.2. The results showed best performance for group III-V materials. The lattice constant for the most commonly used telecommunication wavelength (1.55 µm) was found to be 0.5479 µm for AlGaAs and 0.550 µm for GaAs respectively. As an optical limiter, AlGaAs showed the best performance with the threshold refractive index change at 0.05.
Źródło:: World Scientific News; 2018, 97; 1-27
2392-2192
Pojawia się w:: World Scientific News
Dostawca treści:: Biblioteka Nauki

Artykuł

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