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Tytuł:
Physics with Chemically and Isotopically Pure Semiconductors
Autorzy:
Haller, E. E.
Powiązania:
https://bibliotekanauki.pl/articles/1929597.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
63.20.-e
66.30.-h
28.60.+s
Opis:
Chemically and isotopically pure semiconductors offer a wealth of interesting physics. We review a number of impurity complexes which were discovered in ultra-pure germanium. They have led the way to the widely pursued studies of hydrogen in numerous semiconductors. Isotope related effects and processes include neutron transmutation doping, a technique used for a number of silicon and germanium devices: isotopically pure and deliberately mixed crystals of germanium have been grown recently and have been used to study the dependence of the indirect bandgap and phonon properties on the mass and mass disorder of the nuclei. The large number of stable isotopes of the various semiconductors present a great potential for basic and applied studies. Semiconductor isotope engineering may become a reality because of the new economic and political world order.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 395-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Origin of Centres Involved in Blue and Orange Luminescence of 6H-SiC
Autorzy:
Wysmołek, A.
Baranowski, J. M.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934050.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
78.20.-e
78.60.Kn
Opis:
We present new results of luminescence of n-type 6H-SiC crystals. We have found two shallow donors with ionization energies at 60 meV and 140 meV. We have shown that the blue luminescence is not affected by the ionization of the shallower donor and is related to deeper donor which we attribute to N at C-site. We propose that the origin of the more shallower donor at 60 meV is related to carbon vacancy. We have found that the intensity of the orange luminescence increases under infrared illumination. This result confirms that the orange luminescence is due to conduction band-deep centre transitions. We believe that deep centre responsible for the orange luminescence is the silicon vacancy.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 957-960
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoexcitation Spectroscopy and Material Alteration with Free-Electron Laser
Autorzy:
Sturmann, J.
Albridge, R. G.
Barnes, A. V.
Gilligan, J.
Graham, M. T.
Mckinley, J. T.
Ueda, A.
Wang, W.
Yang, X.
Tolk, N. H.
Davidson, J. L.
Margaritondo, G.
Powiązania:
https://bibliotekanauki.pl/articles/1963341.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.20.La
79.20.Ds
63.20.-e
79.60.Jv
73.20.At
Opis:
As synchrotron radiation sources have been used for many experiments in the ultraviolet and X-ray regimes, the free-electron laser is an excellent source for a wide array of infrared-photon projects and applications. The free-electron laser delivers a beam of powerful tunable pulsed radiation which provides the opportunity for spatial and temporal localization of the energy delivered at any desired wavelength within the 2-10 μ regime. One application discussed employs the free-electron laser for spectroscopy as a probe of electronic and vibrational structures. Another application uses the free-electron laser beam as a tool for altering materials in a fundamentally new way.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 689-696
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Soft X-Ray Spectromicroscopy and its Application to Semiconductor Microstructure Characterization
Autorzy:
Gozzo, F.
Franck, K.
Howells, M. R.
Hussain, Z.
Warwick, A.
Padmore, H. A.
Triplett, B. B.
Powiązania:
https://bibliotekanauki.pl/articles/1963346.pdf
Data publikacji:
1997-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
85.40.-e
79.60.-i
Opis:
The universal trend towards device miniaturization has driven the semiconductor industry to develop sophisticated and complex instrumentation for the characterization of microstructures. Many significant problems of relevance to the semiconductor industry cannot be solved with conventional analysis techniques, but can be addressed with soft X-ray spectromicroscopy. An active spectromicroscopy program is being developed at the Advanced Light Source, attracting both the semiconductor industry and the materials science academic community. Examples of spectromicroscopy techniques are presented. An Advanced Light Source μ-XPS spectromicroscopy project is discussed, involving the first microscope completely dedicated and designed for microstructure analysis on patterned silicon wafers.
Źródło:
Acta Physica Polonica A; 1997, 91, 4; 697-705
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Field Relaxational Behavior of Taap Single Crystal (20-10$\text{}^{6}$ Hz)
Autorzy:
Fernández del Castillo, J. R.
Iglesias, T.
Przesławski, J.
Gonzalo, J. A.
Powiązania:
https://bibliotekanauki.pl/articles/1968856.pdf
Data publikacji:
1998-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.60.Fr
77.80.-e
Opis:
Relaxational behavior of ferroelectric telluric acid ammonium phosphate crystals were investigated in the range 20 Hz to 1 MHz by means of low field measurements of ε' and tan δ in the vicinity of ferroelectric phase transitions at a number of frequencies. Results are compared with those for triglycine selenate, a much "softer" ferroelectric material. The measuring field and frequency dependence of the effective potential barrier height for domain wall motion are compared in both crystals.
Źródło:
Acta Physica Polonica A; 1998, 93, 3; 499-503
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Thermal Annealing on Optical Properties of Implanted Gaas
Autorzy:
Kulik, M.
Komarov, F. F.
Mączka, D.
Powiązania:
https://bibliotekanauki.pl/articles/2011008.pdf
Data publikacji:
1999-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.60.Fs
61.72.Vv
78.20.-e
Opis:
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3×10$\text{}^{16}$ cm$\text{}^{-2}$ indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
Źródło:
Acta Physica Polonica A; 1999, 96, 1; 131-135
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Excited State Absorption and Thermoluminescence in Ce and Mg Doped Yttrium Aluminum Garnet
Autorzy:
Wiśniewski, K.
Koepke, Cz.
Wojtowicz, A. J.
Drozdowski, W.
Grinberg, M.
Kaczmarek, S. M.
Kisielewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2007834.pdf
Data publikacji:
1999-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Hx
78.55.-m
78.60.Kn
73.50.Gr
29.40.Mc
78.20.-e
78.20.Wc
78.40.-q
Opis:
In this paper we report preliminary results of optical studies on Y$\text{}_{3}$Al$\text{}_{5}$O$\text{}_{12}$ (YAG) crystals codoped with Ce and Mg. By using measurements of luminescence, absorption, and luminescence excitation spectra we demonstrate that although the basic features introduced to the YAG host by the Ce-doping remain intact, the Mg-codoping imposes some significant changes on other properties of the material. These changes are potentially important for laser and/or scintillator applications of YAG:Ce and are due, most likely, to modifications of defect populations in the material. We characterize them by using the techniques of thermoluminescence and excited state absorption under excimer laser pumping. These techniques, interestingly, yield results that seem inconsistent. While the thermoluminescence signal of the Mg-doped sample is strongly reduced, suggesting that trap concentrations in the presence of Mg are suppressed, the excited state absorption signal, which we also relate to the traps, is higher. We offer a tentative explanation of this contradiction between the two experiments that involves a massive transfer of electrons from the Mg-related defects to the excited state absorption centers caused by the excimer pump itself.
Źródło:
Acta Physica Polonica A; 1999, 95, 3; 403-412
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Polypropylene Films Studied with Variable Positron Beams
Autorzy:
Dębowska, M.
Coleman, P. G.
Gidley, D. W.
Powiązania:
https://bibliotekanauki.pl/articles/2007958.pdf
Data publikacji:
1999-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
36.10.Dr
61.41.+e
71.60.+z
78.70.Bj
Opis:
Doppler broadening and positron lifetime spectra have been measured for polypropylene films of constant thickness (≈ 50 μm) and different morphology that crystallized from melt at temperature 0, 100, and 120°C. The S -parameter vs. energy curves do not change in a systematic way with crystallinity of samples. It is supposed that decrease in the fractional free volume for samples of greater crystallinity is not seen in S-values because of their increase resulting from annihilation in defects present both in the crystalline regions and on the lamellae surfaces. Intensities of the components in the positron lifetime spectra: I$\text{}_{2}$ (τ$\text{}_{2}$=1.3 ns) and I$\text{}_{3}$ (τ$\text{}_{3}$≈ 2.3÷2.8 ns) show changes with crystallinity of samples. The evident trend is observed for the longer-lived τ$\text{}_{3}$-component intensity to decrease with crystallinity while the reverse is true for the shorter, fixed τ$\text{}_{2}$-component. The decrease in the intensity of the longer-lived component can result from reduction of the fractional free volume.
Źródło:
Acta Physica Polonica A; 1999, 95, 4; 496-504
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Heat Capacity and Elastic Constants of Fe$\text{}_{3-x}$Zn$\text{}_{x}$O$\text{}_{4}$ in the Vicinity of the Verwey Transition
Autorzy:
Kozłowski, A.
Kąkol, Z.
Schwenk, H.
Bareiter, S.
Hinkel, C.
Luthi, B.
Honig, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2013722.pdf
Data publikacji:
2000-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.Dc
63.20.-e
64.60.-i
65.40.+g
Opis:
The results of the heat capacity and elastic constant studies of Fe$\text{}_{3-x}$Zn$\text{}_{x}$O$\text{}_{4}$ (x<0.04) series are reported. Adiabatic heat capacity measurements, performed on single crystals, show the clear change of the transition character from first order for low Zn content (x<0.012) to the higher order in 0.012
Źródło:
Acta Physica Polonica A; 2000, 97, 5; 883-887
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annihilation Lifetime in situ Study of Deformed Polyolefin Elastomers
Autorzy:
Krzemień, K.
Kansy, J.
Frąckowiak, J. E.
Powiązania:
https://bibliotekanauki.pl/articles/2043338.pdf
Data publikacji:
2005-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
71.60.+z
61.41.+e
Opis:
The positron annihilation lifetime spectroscopy was used to investigate the free volume hole size of ethylene octane copolymers as a function of deformation in the range from 0 to 110% in steps of 10%. For each degree of deformation a series of 5-6 positron annihilation lifetime spectra was collected in situ. All spectra of a given series were analysed simultaneously. They were resolved into three exponential components, of lifetimes parameters τ$\text{}_{i}$ and intensities I$\text{}_{i}$. The variations of τ$\text{}_{3}$ reflect three deformation regions, the elastic range, strain softening range, and plastic region.
Źródło:
Acta Physica Polonica A; 2005, 107, 5; 837-841
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Adsorption Properties on Lithium Doped Activated Carbon Materials
Autorzy:
Łoś, S.
Duclaux, L.
Letellier, M.
Azaïs, P.
Powiązania:
https://bibliotekanauki.pl/articles/2043641.pdf
Data publikacji:
2005-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.-h
33.15.-e
76.30.-v
79.60.-i
Opis:
A volumetric method was applied to study an adsorption coefficient of hydrogen molecules in a gas phase on super activated carbon surface. The investigations were focused on getting the best possible materials for the energy storage. Several treatments on raw samples were used to improve adsorption properties. The biggest capacities were obtained after high temperature treatment at reduced atmosphere. The adsorption coefficient at 77 K and 2 MPa amounts to 3.158 wt%. The charge transfer between lithium and carbon surface groups via the doping reaction enhanced the energy of adsorption. It was also found that there is a gradual decrease in the adsorbed amount of H$\text{}_{2}$ molecules due to occupation active sites by lithium ions.
Źródło:
Acta Physica Polonica A; 2005, 108, 2; 371-377
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Lifetime in Hostaphan
Autorzy:
Kostrzewa, M.
Bujnarowski, G.
Kluza, A. A.
Szuszkiewicz, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047137.pdf
Data publikacji:
2006-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
71.60.+z
61.41.+e
Opis:
Positron lifetime measurements in hostaphan RNK, used for encapsulation of $\text{}^{22}$Na positron sources, were performed. It was found that the parameter of positron lifetime spectra in hostaphan RNK differ markedly from those for other forms of polyethylene terephthalate. The maximum penetration depth of positrons from RNK hostaphan amounts 0.42 mm. The information gained in the present study is of great importance for experimenters using hostaphan RNK for encapsulation of positron sources.
Źródło:
Acta Physica Polonica A; 2006, 110, 5; 615-620
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Correlations between Positron Annihilation Parameters and Macroscopic Properties in Copolymers Belonging to Elastomers Group
Autorzy:
Krzemień, K.
Kansy, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812536.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
71.60.+z
61.41.+e
Opis:
The positron annihilation lifetime spectroscopy was used to study correlations between positron annihilation parameters and macroscopic properties in two kinds of polymers from elastomers group. Two kinds of material were investigated: three samples of ethylene octane copolymers (commercial name engage) of different densities and six samples of polybutylene terephtalate-polyether glycol copolymers (hytrel) having different densities. A correlation between intensity of ortho-positronium component and the density (d) of samples was observed for both kinds of material. From the ortho-positronium pick-off lifetime the mean radii (R) of free volume centers were determined. A good linear correlation between R and d was found.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1435-1440
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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