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    Wyświetlanie 1-7 z 7
    Tytuł:
    Design of Hybrid Solar Cell Based on Dye-Sensitized $TiO_2$ Nanoparticles with Conjugated Polymer
    Autorzy:
    Abbasian, K.
    Rostami, A.
    Pourkhorshidi, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490502.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.35.Np
    88.40.hj
    Opis:
    In this paper, we have proposed dye-sensitized hybrid solar cell based on $TiO_2$ nanoparticles as a medium for electron transport and conjugated polymers as hole-conductor, where dye molecules absorb solar radiation and create electron-hole pairs. This solar cell can be a better alternative to conventional electrolyte based dye-sensitized solar cells, because of enhanced characteristics of performance. We have simulated it numerically, to study essential characteristics of the structure such as electron, hole and their current densities and internal electric field in two operating conditions of open-circuit and short-circuit cases. Then current-voltage characteristic diagram has been plotted and energy conversion efficiency calculated.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 10-12
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Electromotive Force Dependence on the Polycrystalline Silicon Solar Cell Illuminance
    Autorzy:
    Jukna, A.
    Miškinis, P.
    Valuntaitė, V.
    Bogdanovičius, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400558.pdf
    Data publikacji:
    2015-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    88.40.H-
    88.40.jj
    88.40.hj
    88.40.fc
    Opis:
    The impact of illuminance on changes of the solar cell electromotive force is analyzed. A mathematical model for a solar cell electromotive force dependence on illuminance is presented. For this purpose, a selection of experimental data trend function was carried out, and the Pearson correlation coefficients were established. The most optimal results were obtained in case of an exponential function with the strongest correlation ($R^2$=0.983). The analysis has shown that at 100 W/m^2 illuminance the electromotive force saturation is obtained (the electromotive force changes insignificantly and fluctuates at around 2 V), which indicates that upon reaching such an illuminance a solar cell operates at maximum efficiency. A first-order differential equation satisfied by the trend function has been compiled. When interpreting illuminance as an evolution variable, the proposed mathematical model can be interpreted as a dynamical system. The deviation frequency spectrum of the measurement values with respect to the theoretical prediction is analyzed.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 6; 1711-1716
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Application of Ion Implantation for Intermediate Energy Levels Formation in the Silicon-Based Structures Dedicated for Photovoltaic Purposes
    Autorzy:
    Billewicz, P.
    Węgierek, P.
    Grudniewski, T.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033759.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    71.55.Eq
    88.40.hj
    Opis:
    The main aim of the research was to verify if it is possible to create the intermediate energy levels in silicon by means of ion implantation as well as to confirm whether the intermediate band could arise. The tests covered recording of conductance and capacitance of antimony-doped silicon, implanted with Ne⁺ ions. As a result, it was possible to identify a single deep level in the sample and determine its location in the band gap by estimating the value of activation energy.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 274-277
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural, Optical, and Electrical Studies on Pulse Plated $AgInSe_2$ Films
    Autorzy:
    Murugan, S.
    Murali, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205200.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.ag
    73.61.Jc
    88.40.hj
    88.40.jn
    Opis:
    In this work, the pulse electrodeposition technique was employed for the first time to deposit $AgInSe_2$ films. The films were deposited at room temperature from a bath containing Analar grade 10 mM silver sulphate, 50 mM indium sulphate and 5 mM $SeO_2$. The deposition potential was maintained at -0.98 V (SCE). Tin oxide coated glass substrates (5.0 $Ω$/sq) were used for depositing the films. The duty cycle was varied in the range of 6-50%. The X-ray diffraction pattern of the thin films deposited at different duty cycles indicated the peaks corresponding to $AgInSe_2$. The transmission spectra exhibited interference fringes. Resistivity of the films increased from 1.5 $Ω$ cm to 12.4 $Ω$ cm. Mobility increased with duty cycle. Carrier density decreased with duty cycle. The photovoltaic parameters of CdS/$AgInSe_2$ solar cells increased with duty cycle.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 727-731
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells
    Autorzy:
    Rached, D.
    Madani Yssad, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398948.pdf
    Data publikacji:
    2015-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Jc
    71.20.Mq
    88.40.hj
    88.40.jj
    Opis:
    A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending $E_\text{sbb}$ at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height $\phi_{b0}$ (variation of the surface band bending $E_\text{sbb}$) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 3; 767-769
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Spectral Irradiance Distribution on the Performance of Solar Cells
    Autorzy:
    Guechi, A.
    Chegaar, M.
    Merabet, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492610.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Pz
    84.60.Jt
    88.40.hj
    88.40.ff
    96.60.Ub
    Opis:
    In this paper, the global and diffuse solar radiation incident on solar cells is simulated using a spectral model SMARTS2, for varying atmospheric conditions on the site of Setif. The effect of changes in total intensity and spectral distribution on the short circuit current and efficiency of different kinds of thin film solar cells (CdTe, nc-Si:H and copper indium gallium selenide, CIGS) is examined. The results show a reduction in the short circuit current due to increasing turbidity. It is 18.82%, 27.06% and 26.80% under global radiation and for CdTe, nanocrystalline silicon (nc-Si:H), and CIGS solar cells, respectively. However it increases under diffuse radiation. Increasing water vapor in the atmosphere leads to a reduction in the short circuit current of 3.15%, 2.38%, and 2.45%, respectively, for CdTe, nc-Si:H, and CIGS cells under global radiation and it is not influenced under diffuse radiation. The performance of the solar cells is notably reduced, both in terms of efficiency and open circuit voltage, with increasing air mass.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-043-A-046
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improvement of Efficiency in CdS Quantum Dots Sensitized Solar Cells
    Autorzy:
    Wageh, S.
    Al-Ghamdi, A.
    Soylu, M.
    Al-Turki, Y.
    El Shirbeeny, W.
    Yakuphanoglu, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399329.pdf
    Data publikacji:
    2013-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.35.Be
    88.40.hj
    72.80.Vp
    68.47.Gh
    Opis:
    CdS quantum dots were coated on $TiO_2$ layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density $J_{SC}$ was found to be approximately 6.01 $mA//cm^2$ for graphene oxide-incorporated $CdS//TiO_2$ solar cell, while the $J_{SC}$ of only CdS-sensitized solar cells was lower than 4.40 $mA//cm^2$. The efficiency of the $CdS//TiO_2$ solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the $CdS//TiO_2$ solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated $TiO_2$ was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 4; 750-754
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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