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    Wyświetlanie 1-11 z 11
    Tytuł:
    Gain Studies on Photoconductors Made on Partly Compensated GaAs
    Autorzy:
    Riesz, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1872925.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Pz
    85.60.Gz
    Opis:
    The gain behavior of GaAs photoconductors realized on the partly compensated channel of a MESFET is studied. The gain versus light power dependence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism is pointed out.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 373-376
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
    Autorzy:
    Kucharski, K.
    Zagrajek, P.
    Tomaszewski, D.
    Panas, A.
    Głuszko, G.
    Marczewski, J.
    Kopyt, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1186027.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    85.60.Gz
    42.79.Pw
    Opis:
    Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1193-1195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si
    Autorzy:
    Riesz, F.
    Vo van, Tuven
    Varrio, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933966.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.60.Gz
    73.50.Pz
    73.40.Sx
    Opis:
    Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 889-892
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fast Bolometric Response of Bulk La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Electroceramic Structures
    Autorzy:
    Nikolaenko, Yu. M.
    Maksimov, I. S.
    Medvedev, Yu. V.
    Ulyanov, A. N.
    Grishin, A. M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2014001.pdf
    Data publikacji:
    2000-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.57.Kp
    85.60.Gz
    72.15.Gd
    Opis:
    We report on the performance of a microwave electroceramic bolometer of hybrid La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$/Al$\text{}_{2}$O$\text{}_{3}$ (0.2×2×4 mm$\text{}^{3}$) structure. The estimated thermal resistance of the bulk ceramic manganite film-single crystal sapphire interface is about 500 K/W at room temperature. This resistance is the main thermal barrier in the heat sink system and has been found to be slightly dependent on temperature. When compared with the high-T$\text{}_{c}$ superconducting bolometers, the La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ microwave electroceramic bolometer works in a more wide temperature range, from 77 K to 330 K, excluding the narrow temperature interval at the metal-insulator phase transition (T=230 K). The microwave electroceramic bolometer sensitivity and the time constant at room temperature have been found to be 0.1 V/W and 100 ms, respectively. To improve the bolometer performance the point contact has been fabricated by a break junction technique. The optimization of a microwave electroceramic bolometer design brought to a considerable improvement of basic bolometer characteristics. The microwave sensitivity was about 0.3 V/W and the time constant was less than 100 ns.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 6; 991-995
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Calculations of Dark Current in Interband Cascade Type-II Infrared InAs/GaSb Superlattice Detector
    Autorzy:
    Hackiewicz, K.
    Martyniuk, P.
    Rutkowski, J.
    Kowalewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032582.pdf
    Data publikacji:
    2017-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Mn
    73.61.Ey
    78.30.Fs
    85.60.Bt
    85.60.Gz
    Opis:
    In this paper we investigate interband cascade type-II mid-wavelength infrared InAs/GaSb superlattice detector in temperature range from 200 K to 300 K. The paper is based on the theoretical calculation of dark current treated as a sum of two components: average bulk current and average leakage current, flowing through the device. The average leakage current results from a comparison of theoretically calculated bulk current and measured one. We show that it is possible to fit theoretical model to experimental data, assuming that transport in absorber is determined by the dynamics of the intrinsic carriers. Based on the fit we estimated carrier lifetime greater than 100 ns in temperature range 200-300 K.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 4; 1415-1419
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrafast Phenomena in Freestanding LT-GaAs Devices
    Autorzy:
    Marso, M.
    Mikulics, M.
    Adam, R.
    Wu, S. Wu.
    Zheng, X.
    Camara, I.
    Siebe, F.
    Förster, A.
    Güsten, R.
    Kordoš, P.
    Sobolewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041640.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    72.40.+w
    78.30.Fs
    85.60.-q
    85.60.Gz
    Opis:
    We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 109-117
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mapping of Copper Oxidation State Using High Pressure X-Ray Photoelectron Spectroscopy
    Autorzy:
    Kowalska, J.
    Gopinath, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1364054.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    07.05.Tp
    85.60.Gz
    73.40.-c
    78.66.-w
    Opis:
    The interaction of $O_2$ with polycrystalline foil of Cu, from ultra high vacuum to 1 mbar and up to 773 K has been investigated. The study were performed by using the high pressure X-ray photoelectron spectroscopy (electron spectroscopy for chemical analysis) ultraviolet photoelectron spectroscopy system. In this work the results of mapping copper oxidation states as a function of temperature at 1 mbar $O_2$ have been presented.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1065-1066
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Dots as Sources and Detectors οf Mid- and Far-Infrared Radiation: Theoretical Models
    Autorzy:
    Vukmirović, N.
    Indjin, D.
    Ikonić, Z.
    Harrison, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791186.pdf
    Data publikacji:
    2009-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    78.67.Hc
    73.63.Kv
    85.60.Gz
    85.35.Be
    Opis:
    We present a review of theoretical methods used to study the electronic structure, optical and transport properties of intraband optoelectronic devices based on self-assembled quantum dots.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 4; 464-467
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonance Scattering of Electrons in $Ag_{2}Te$
    Autorzy:
    Aliyev, F.
    Jafarov, M.
    Eminova, V.
    Asgerova, G.
    Hasanova, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492779.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Jf
    72.25.Pa
    71.23.An
    71.55.-l
    85.60.Gz
    Opis:
    The temperature dependences of electric conductivity σ, the Hall coefficient R of $p-Ag_{2}Te$ in 4.2-200 K temperature interval for acceptor concentration $N_{a} ≤ 6 × 10^{16} cm^{-3}$ were investigated. The minimum σ(T) was observed for all samples in ≈50÷80 K temperature interval. It was observed that the depth of minimum is increased with $N_{a}$ decrease. It was shown that the part resonance scattering of electrons in minimum of σ(T) and maximum of $|α_{n} (T)|$ region is 16-18%.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6; 1061-1064
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Extension of Usable Spectral Range of Peltier Cooled Photodetectors
    Autorzy:
    Piotrowski, A.
    Piotrowski, J.
    Gawron, W.
    Pawluczyk, J.
    Pedzinska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807657.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.60.Gz
    82.80.Gk
    73.61.Ga
    78.66.Hf
    81.05.Dz
    Opis:
    This paper provides update on development of the Peltier cooled detectors optimized for wavelengths above 13 μm. Initially, the devices made by Vigo were mostly used for uncooled detection of $CO_{2}$ laser radiation. Over the years the performance and speed of response has been steadily improved. At present the uncooled or Peltier cooled photodetectors can be used for sensitive and fast response detection in the mid-wavelength and long-wavelength infrared spectral range. The devices have found important applications in IR spectrometry, quantum cascade laser based gas analyzers, laser radiation alerters and many other IR systems. Recent efforts were concentrated on the extension of useful spectral range to > 13 μm, as required for its application in Fourier transform IR spectrometers. This was achieved with improved design of the active elements, use of monolithic optical immersion technology, enhanced absorption of radiation, dedicated electronics, series connection of small cells in series, and last but not least, applying more efficient Peltier coolers. Practical devices are based on the complex HgCdTe heterostructures grown on GaAs substrates with metal-organic chemical vapor deposition technique with immersion lens formed by micromachining in the GaAs substrates. The results are very encouraging. The devices cooled with miniature 4 stage Peltier coolers mounted in TO-8 style housings show significant response at wavelength exceeding 16 μm.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-52-S-55
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    III-Nitride Nanostructures for Infrared Optoelectronics
    Autorzy:
    Monroy, E.
    Guillot, F.
    Leconte, S.
    Bellet-Amalric, E.
    Nevou, L.
    Doyennette, L.
    Tchernycheva, M.
    Julien, F. H.
    Baumann, E.
    Giorgetta, F.
    Hofstetter, D.
    Dang, Le Si
    Powiązania:
    https://bibliotekanauki.pl/articles/2046980.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    78.67.De
    85.60.Gz
    85.35.Be
    81.15.Hi
    81.07.St
    Opis:
    Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 295-301
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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