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Wyświetlanie 1-15 z 17
Tytuł:
Nitrogen Oxides Optoelectronic Sensors Operating in Infrared Range of Wavelengths
Autorzy:
Wojtas, J.
Bielecki, Z.
Stacewicz, T.
Mikolajczyk, J.
Rutecka, B.
Medrzycki, R.
Powiązania:
https://bibliotekanauki.pl/articles/1399410.pdf
Data publikacji:
2013-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.07.Df
42.25.Dd
42.55.Px
42.60.Da
42.62.Fi
85.60.-q
Opis:
Investigation of nitric oxide and nitrous oxide optoelectronic sensors is described. The detection of both components was done by measurement of absorption that occurs due to transition between vibronic molecular transitions. The improvement of the sensitivity was achieved due to application of cavity enhanced absorption spectroscopy. Two optical cavities (each one for each gas) built of high reflectance spherical mirrors were used. While the spectra of observed transitions are situated in mid-infrared range, two single mode quantum cascade lasers were applied. Their narrow emission lines were precisely tuned to the absorption lines of both investigated gases. The measurement of different mixtures of $Ar-NO$ and $Ar-N_2O$ within the range from 100 ppb to 10 ppm was performed. The relative uncertainty of the results did not exceed the level of 13%.
Źródło:
Acta Physica Polonica A; 2013, 124, 3; 592-594
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
Autorzy:
Szerling, A.
Karbownik, P.
Kosiel, K.
Kubacka-Traczyk, J.
Pruszyńska-Karbownik, E.
Płuska, M.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807678.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
85.35.Be
72.80.Ey
73.61.Ey
78.66.Fd
Opis:
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-45-S-47
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers
Autorzy:
Pruszyńska-Karbownik, E.
Karbownik, P.
Szerling, A.
Kosiel, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807668.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
85.35.Be
72.80.Ey
Opis:
Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-60-S-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Waveguide Design for Long Wavelength InGaN Based Laser Diodes
Autorzy:
Muzioł, G.
Turski, H.
Siekacz, M.
Sawicka, M.
Wolny, P.
Cheze, C.
Cywiński, G.
Perlin, P.
Skierbiszewski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1403640.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
42.82.Et
81.15.Hi
Opis:
One-dimensional optical waveguide calculations were performed to study the dependence of waveguide design on confinement factor (Γp) and optical losses ($\alpha_i$) of nitride laser diodes for emission wavelength ranging from 405 nm to 520 nm. We found that the conventional waveguide design containing GaN waveguide and AlGaN cladding layers known from violet laser diode does not support sufficient confinement of the optical mode for long wavelength devices (λ > 450 nm). We proposed a new design consisting of a thick InGaN waveguide which enhances the confinement. We compared the theoretical predictions with laser diodes grown by plasma assisted molecular beam epitaxy.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1031-1033
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Acoustic Waves to Microwaves
Autorzy:
Mendes Pacheco, G.
Salvi Sakamoto, J.
Kitano, C.
Powiązania:
https://bibliotekanauki.pl/articles/1377945.pdf
Data publikacji:
2015-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.35.Sx
42.79.Jq
51.40.+p
42.79.-e
43.35.Zc
84.40.-x
85.60.-q
Opis:
We present here some results of our research related to the optoelectronics and photonics and show all the experimental setups used. Starting with a discussion on the importance of the waves, we demonstrate our achievements based on employment of acoustic, optical, and microwaves and their technological use. The results concern the acousto-optic and electro-optic effects. The generalized analysis of the electro-optic effect reveals a new high induced birefringence in lithium niobate. A patented optical fiber microphone is presented, and its applications to the measurements of acoustic wave velocity in gases and in the laser ultrasound non-destructive evaluation system are discussed. Finally, the generation of microwaves by an optical method with substantial cost reduction is presented.
Źródło:
Acta Physica Polonica A; 2015, 127, 1; 25-28
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Phenomena in Freestanding LT-GaAs Devices
Autorzy:
Marso, M.
Mikulics, M.
Adam, R.
Wu, S. Wu.
Zheng, X.
Camara, I.
Siebe, F.
Förster, A.
Güsten, R.
Kordoš, P.
Sobolewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/2041640.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
72.40.+w
78.30.Fs
85.60.-q
85.60.Gz
Opis:
We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 109-117
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
Autorzy:
Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1398767.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.40.+w
85.60.-q
Opis:
In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current $(I_{sc})$ and open circuit voltage $(V_{oc})$. Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 767-769
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of Colour-Contrast Sensitivity of the Retina
Autorzy:
Kubarko, A.
Firago, V.
Hotra, O.
Powiązania:
https://bibliotekanauki.pl/articles/1199150.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
42.79.-e
42.15.Eq
07.07.Df
42.79.Pw
Opis:
The computer methods for determining the map of colour-contrast sensitivity of the retina, suitable for mass screening of the earlier disturbances of visual and circulatory systems of humans, are discussed. The expressions for calculation, and the results of the determination of the threshold values of the photon fluxes at which young people detect the light stimulus in the shape of the red square with the side 2 mm, formed on the screen of CRT display, are given.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1367-1370
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
Autorzy:
Kosiel, K.
Szerling, A.
Kubacka-Traczyk, J.
Karbownik, P.
Pruszyńska-Karbownik, E.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791281.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
81.15.Hi
85.60.-q
85.35.Be
73.63.-b
63.22.-m
72.80.Ey
73.61.Ey
78.66.Fd
Opis:
The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/$Al_{0.45}Ga_{0.55}As$ heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and $Si_{3}N_{4}$ for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 806-813
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modelling the Influence of Stresses on Magnetic Characteristics of the Elements of the Truss Using Extended Jiles-Atherton Model
Autorzy:
Jackiewicz, D.
Szewczyk, R.
Kachniarz, M.
Biedrzycki, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032148.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.60.Ej
75.85.+t
81.70.-q
Opis:
Steel trusses structures are commonly used in civil engineering. Their mechanical parameters, especially the durability, are critical, and often human life depends on it. Therefore it is very important to monitor the critical elements of the truss. For this purpose magnetoelastic method of measurement may be used. It is a method having several advantages over other methods, particularly because of use of elements which are already parts of the structure. The study of structural elements have already been conducted. However, to take advantage of the magnetoelastic characteristics measurement to assess the state of stress, one should have a model of the influence of stress on magnetic properties. The influence of stresses on hysteresis loops was modelled with the extended Jiles-Atherton model. The obtained results of the modelling are consistent with the experimental measurements results. The results of modelling create new possibilities of explanation of the physical phenomena connected with magnetization of the magnetic materials under stresses, which is especially important for the assessment of the state of the constructional steel during its exploitation in industrial conditions.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1189-1191
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phase Shifter Operation of the Azimuthally Magnetized Coaxial Ferrite Waveguide
Autorzy:
Georgieva-Grosse, M.
Georgiev, G.
Powiązania:
https://bibliotekanauki.pl/articles/1419702.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
02.60.Lj
02.90.+p
41.20.-q
41.20.Jb
85.70.Ge
Opis:
The terms for operation of the coaxial waveguide, entirely filled with azimuthally magnetized latching ferrite, as a digital nonreciprocal phase shifter for the normal $TE_{01}$ mode, are found. They are classified as physical, mathematical and functional ones. The physical prerequisites are drawn from the phase curves of the structure and specify the boundaries of the interval in which it produces differential phase shift for a given numerical equivalent of the modulus of off-diagonal ferrite permeability tensor element. The mathematical condition brings the parameters of configuration together with certain roots of its characteristic equation, derived in terms of complex Kummer and Tricomi confluent hypergeometric functions and with the related to them positive real $L_2(c,ρ,n)$ numbers (c=3, 0<ρ<1, n=1). The functional criteria determine the borders of the domain of phase shifter operation of the geometry. These are functions, defined for a fixed central conductor thickness which express in normalized form the impact of the guide radius on the phase shift at the cut-off frequencies and at the envelopes, denoting the termination of the phase curves for negative ferrite magnetization from the side of higher frequencies. The same are reckoned, employing iterative methods, consisting in a repeated numerical solution of the equation mentioned, followed by a computation of the guide radius and phase constant of the wave and are plotted graphically. The influence of the parameters of transmission line on the area referred to is analyzed.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 63-70
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
State of the Art Molecular Beam Epitaxy of III-V Compounds
Autorzy:
Foxon, C. T.
Powiązania:
https://bibliotekanauki.pl/articles/1933668.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
61.50.Cj
68.55.Bd
72.20.-i
Opis:
This paper discusses molecular beam epitaxy with particular emphasis on the production of state of the art electronic and optoelectronic low dimensional structures and devices. The molecular beam epitaxy process is outlined briefly and the practical problems associated with producing "state of the art" (Al,Ga)As/GaAs structures are considered. Examples include high mobility electron and hole gases, low threshold current lasers and the multi-quantum well solar cells.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 559-566
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrathin Glass for the Photovoltaic Applications
Autorzy:
Dziedzic, J.
Inglot, M.
Powiązania:
https://bibliotekanauki.pl/articles/1032413.pdf
Data publikacji:
2017-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.60.Jt
71.20.Nr
72.40.+w
42.70.-a
85.60.-q
Opis:
Chemically strengthened ultrathin glass with a thickness of less than 1 mm has many advantages, such as flexibility, smooth surface, good transmittance, excellent gas and water barrier, much higher toughened in relations to thermally tempered glass, higher impact resistance, increased corrosion resistance and much higher abrasion rate. Chemical strengthening process is a process where an ion exchange occurs by diffusion between the glass panes and the brine solution bath. The deeper penetration of the glass surface by ions contained in the brine bath contributes to the hardness of the glass sheets, which reduces the occurrence of surface defects that cause reflections. From the point of view of photovoltaic applications ultrathin glass significantly reduces the weight of the whole photovoltaic panel structure with respect to known solutions. Furthermore, the reduction of the glass thickness increases the transmission of solar energy in the visible range directly through the glass. In addition, chemical tempered glass has a lower reflectance of light from the surface than the thermally tempered glass. What is more, ultrathin glass is perfect substrate for deposition of nanomaterials, i.e. conductive films or quantum dots. In this work we demonstrate that chemically strengthened ultrathin glass is a perfect material for the photovoltaic applications, i.e. as a substrate for deposition of thin layers and for the design of photovoltaic modules of reduced weight.
Źródło:
Acta Physica Polonica A; 2017, 132, 1; 176-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Semiconductor Materials for Ultrafast Photoswitches
Autorzy:
Coutaz, J.-L
Powiązania:
https://bibliotekanauki.pl/articles/2035566.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
85.60.Dw
72.20.-i
72.40.+w
72.80.Ey
42.65.Re
Opis:
This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 495-512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors
Autorzy:
Cola, A.
Nabet, B.
Chen, X.
Quaranta, F.
Powiązania:
https://bibliotekanauki.pl/articles/2041621.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.-q
73.40.Sx
06.60.Jn
Opis:
In this work we review the properties of a class of metal-semiconductor-metal photodetectors based on heterojunction structures. Particularly, an AlGaAs/GaAs device is detailed in which the absorption region is in the GaAs layer, and a two-dimensional electron gas is formed at the heterointerface due toδ-doping of the widegap material. This heterostructure metal-semiconductor-metal photodetector also contains an AlGaAs distributed Bragg reflector that forms a resonant cavity for detection at 850 nm. The beneficial effect of the two-dimensional electron gas in the GaAs absorption layer in terms of speed and sensitivity is demonstrated by comparing samples with and without doping in the AlGaAs layer. The design and the physical properties of the grown epitaxial structure are presented, together with the static and dynamic characteristics of the device in time domain. In particular, photocurrent spectra exhibit a 30 nm wide peak at 850 nm, and time response measurements give a bandwidth over 30 GHz. A combination of very low dark current and capacitance, fast response, wavelength selectivity, and compatibility with high electron mobility transistors makes this device suitable for a number of application areas, such as Gigabit and 10 Gigabit Ethernet, wavelength division multiplexing, remote sensing, and medical applications.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 14-25
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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