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Wyświetlanie 1-10 z 10
Tytuł:
Isolated DC and AC Current Amplifier with Magnetic Field Sensor in Loop and Amorphous Ring Core
Autorzy:
Petruk, O.
Kachniarz, M.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032742.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.Ss
07.55.Ge
85.30.Fg
Opis:
This paper presents innovative isolated DC and AC current amplifier containing magnetic field sensor in the feedback loop. The amorphous ring core with an air gap is utilized as a part of the galvanic isolation separating input and output currents. In the paper outline of the amplifier is presented. The printed circuit board project was developed and electronic circuit of the amplifier was manufactured. The developed device was investigated with DC and AC current and the results are presented in the paper. Results indicate usefulness of the developed device in described application.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1174-1176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability
Autorzy:
Pérez, S.
Mateos, J.
González, T.
Powiązania:
https://bibliotekanauki.pl/articles/1505462.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Fg
07.57.Hm
73.40.Kp
Opis:
By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic Γp valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, δ-doping, recess-to-drain distance and recess length on the frequency of the ultrafast Gunn-like oscillations. The simulations show that a minimum value for the δ-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases the oscillation frequency, so provides an interesting frequency tunability of this THz source.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 111-113
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of ZnO Films Grown at Low Temperature
Autorzy:
Przeździecka, E.
Krajewski, T.
Wójcik-Głodowska, A.
Yatsunenko, S.
Łusakowska, E.
Paszkowicz, W.
Guziewicz, E.
Wachnicki, Ł.
Szczepanik, A.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811975.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.-m
81.10.-h
85.30.Fg
Opis:
ZnO thin films were grown by atomic layer deposition method at extremely low temperature using a reactive diethylzinc as a zinc precursor. Optical properties, electrical properties and surface morphology were examined by photoluminescence, Hall effect and atomic force microscope. The study shows correlation between optical, electrical properties and surface morphology in a series of samples of different thickness.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1303-1310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Implementation of Conductance Tomography in Detection of the Hall Sensors Inhomogeneity
Autorzy:
Petruk, O.
Nowak, P.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032288.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
02.70.Dh
Opis:
Tomography is a useful tool for objects reconstruction in non-destructive testing. Many kinds of tomography, depending on the penetrating wave character, are available and adapted for specific application. This paper presents new kind of tomography - conductance tomography extended with a Hall effect. Its development was motivated by the need on inhomogeneity detection in thin film Hall effect sensor, particularly graphene Hall effect sensors. Paper presents complete description of the tomographic method and tomography software developed in the GNU Octave. Inverse transformation is based on optimization method. Each shape reconstruction was done with the finite element method using the open source software: Elmer FEM and Salome. Results confirmed the suitability of the work.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1186-1188
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Method of Offset Voltage Minimization in Hall-Effect Sensor
Autorzy:
Petruk, O.
Kachniarz, M.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032752.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
02.70.Dh
Opis:
The paper presents numerical model and validation of new methodology of offset voltage minimization in the Hall-effect sensors. Model of the Hall-effect sensor with multiple electric pins was developed. Mathematical equations used for calculation of electric potential difference were formulated. Simulations were carried out using finite elements method in ELMER FEM software. Performed investigation of actual parameters of newly designed Hall-effect sensor confirms effectiveness of the described method.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1177-1179
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
Autorzy:
Kachniarz, M.
Petruk, O.
Salach, J.
Ciuk, T.
Strupiński, W.
Bieńkowski, A.
Szewczyk, R.
Powiązania:
https://bibliotekanauki.pl/articles/1030244.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.55.Ge
85.75.Ss
85.30.Fg
81.05.ue
73.22.Pr
72.80.Vp
Opis:
The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1250-1253
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Hydrogen on the Stress Relaxation of Aged NiTi Shape Memory Alloys
Autorzy:
Elkhal Letaief, W.
Hassine, T.
Gamaoun, F.
Powiązania:
https://bibliotekanauki.pl/articles/1398759.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.FG
88.30.EM
87.85.JJ
Opis:
The susceptibility of the NiTi shape memory alloy to relaxation after the hydrogen charging in an aqueous solution has been investigated with respect to ageing during one to six days in air at room temperature. The orthodontic wires have been prepared by immersing in a 0.9% NaCl solution for 3 h, under applied current density of 10 A/m^2 and then relaxed with an imposed deformation in a fully austenite state of structure and in a state with 1/3 and 2/3 of the martensite volume fraction. Through the stress relaxation, the hydrogen-charged specimen has shown a significant decrease of the stress, compared to the non-immersed alloy, when the imposed deformation was located in the plateau of the austenite-martensite transformation. It was also found that a longer ageing period is important and the properties of the wires with longer stress relaxation are similar to the those of non-charged wires. Nevertheless, no difference has been detected between the as-received and the as-charged specimens when the imposed deformation was located in the elastic deformation region of the fully austenitic structure. This behavior is attributed to the effect of the gradient of absorbed hydrogen, existing between the surface and the center axis of the studied wires, which facilitates the mobility of the martensite bands during the stress relaxation.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 714-716
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bioactive Glass Coatings Synthesized by Pulsed Laser Deposition Technique
Autorzy:
Kwiatkowska, J.
Suchanek, K.
Rajchel, B.
Powiązania:
https://bibliotekanauki.pl/articles/1490183.pdf
Data publikacji:
2012-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Fs
63.50.Lm
78.30.Ly
81.15.Fg
87.85.J-
Opis:
Surface modification of medical implants is often required to improve their biocompatibility or, through bioactive properties of the surface material, facilitate its intergrowth with the living tissue. Bioactive-glass coatings can serve that purpose for the bone implants. We report a successful preparation of silicate-phosphate bioactive-glass coating on titanium substrate using the pulsed laser deposition method and present the coating characterization in terms of bonding configuration and chemical activity. The former was studied with high-resolution Raman microspectroscopy and revealed the presence of structural units responsible for the material's bioactivity. The bioactivity was also tested directly, in vitro, by soaking the samples in the simulated body fluid and examining the result with the Raman spectroscopy. The Raman spectrum, typical of hydroxyapatite was observed proving that the bone-like-material formed on the coating's surface.
Źródło:
Acta Physica Polonica A; 2012, 121, 2; 502-505
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Analysis of DSC Curves for Characterization of Intrinsic Properties of NiTi Shape Memory Alloys
Autorzy:
Ziółkowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1419019.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
05.70.Ln
81.30.Kf
81.70.Pg
82.60.Fa
62.20.fg
87.85.J-
Opis:
Differential scanning calorimetry is discussed as a tool for characterization of shape memory alloy materials with the example of $Ni_{51at.%}-Ti$ polycrystalline material. Some inconsistencies connected with the differential scanning calorimetry analysis results present in the contemporary literature are indicated, for example large discrepancies in the registered heats of phase transition or differences in registered heats of forward and reverse phase transition, especially in the case of multi-stage phase transition sequences. An attempt is undertaken to explain some of the discrepancies. The overall conclusion from the present work is that forward and reverse sensible heats of phase transition are equal, and discrepancies reported in the literature are artefacts. It is recommended that as a standard practice of differential scanning calorimetry analysis of shape memory alloy materials not only characteristic temperatures but also sensible heat of phase transition should be reported, which can be done at practically no additional cost.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 601-605
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Semiconductor Nanostructures with nextnano$\text{}^{3}$
Autorzy:
Birner, S.
Hackenbuchner, S.
Sabathil, M.
Zandler, G.
Majewski, J. A.
Andlauer, T.
Zibold, T.
Morschl, R.
Trellakis, A.
Vogl, P.
Powiązania:
https://bibliotekanauki.pl/articles/2046896.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Cd
73.21.Fg
73.61.Ey
77.65.Ly
85.30.Tv
73.40.Mr
Opis:
nextnano$\text{}^{3}$ is a simulation tool that aims at providing global insight into the basic physical properties of realistic three-dimensional mesoscopic semiconductor structures. It focuses on quantum mechanical properties such as the global electronic structure, optical properties, and the effects of electric and magnetic fields for virtually any geometry and combination of semiconducting materials. For the calculation of the carrier dynamics a drift-diffusion model based on a quantum-mechanically calculated density is employed. In this paper we present an overview of the capabilities of nextnano$\text{}^{3}$ and discuss some of the main equations that are implemented into the code. As examples, we first discuss the strain tensor components and the piezoelectric effect associated with a compressively strained InAs layer for different growth directions, secondly, we calculate self-consistently the quantum mechanical electron density of a Double Gate MOSFET, then we compare the intersubband transitions in a multi-quantum well structure that have been obtained with a single-band effective mass approach and with an 8-band k·p model, and finally, we calculate the energy spectrum of a structure in a uniform magnetic field.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 111-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-10 z 10

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