- Tytuł:
- Simulations of Si and $SiO_{2}$ Etching in $SF_{6}+O_{2}$ Plasma
- Autorzy:
- Knizikevičius, R.
- Powiązania:
- https://bibliotekanauki.pl/articles/1538692.pdf
- Data publikacji:
- 2010-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
52.77.Bn
81.65.Rv - Opis:
- The plasma chemical etching of Si and $SiO_{2}$ in $SF_{6}+O_{2}$ plasma is considered. The concentrations of plasma components are calculated by fitting the experimental data. The derived concentrations of plasma components are used for the calculation of Si and $SiO_{2}$ etching rates. It is found that the reaction probabilities of F atoms with Si atoms and $SiO_{2}$ molecules are equal to ε = (8.75 ± 0.41) × $10^{-3}$ and ε = (7.18 ± 0.45) × $10^{-5}$, respectively. The influence of $O_{2}$ addition to $SF_{6}$ plasma on the etching rate of Si is determined.
- Źródło:
-
Acta Physica Polonica A; 2010, 117, 3; 478-483
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł