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Wyświetlanie 1-15 z 47
Tytuł:
The Influence of Growth Temperature on the Properties of AlN Films Grown by Atomic Layer Deposition
Autorzy:
Alevli, M.
Ozgit, C.
Donmez, I.
Powiązania:
https://bibliotekanauki.pl/articles/1492662.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.66.Fd
78.55.Et
Opis:
In this work, we explored the influence of the low growth temperatures on the structural and optical properties of AlN films grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia $(NH_3)$ plasma. Structural and optical results show that AlN films grown by self-limited plasma enhanced atomic layer deposition are polycrystalline at temperatures as low as 100C.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-058-A-060
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modification of Ni-Based Plasma Detonation Coatings by a Low-Energy DC E-Beam
Autorzy:
Alontseva, D.
Krasavin, A.
Pogrebnjak, A.
Russakova, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400454.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.07.-b
68.47.Gh
Opis:
The paper presents the study of Ni-based coatings deposited by plasma detonation onto a steel substrate after direct current low-energy electron beam irradiation and proposes explicit parameters of the electron beam for modification of coatings by irradiation. The choice of irradiation modes is based on the calculation of the temperature profile in the Ni-Fe two-layer absorbents using numerical simulation methods. It was found that the exposure of coatings to irradiation according to the recommended modes leads to the evolution of the structural-phase state of coatings and substantial improvement of performance properties of modified surfaces. The wear resistance of modified surfaces increases 3 times, the microhardness increases on the average 25%.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Comparative Study of the Structure and Phase Composition of Ni-Based Coatings Modified by Plasma Jet or Electron Beam
Autorzy:
Alontseva, D.
Russakova, A.
Krasavin, A.
Powiązania:
https://bibliotekanauki.pl/articles/1398796.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.-z
81.07.-b
68.47.Gh
Opis:
The paper deals with the results of the comparative study into the structure and phase composition, as well as some properties (microhardness, corrosion resistance) of Ni-based powder coatings before and after their modification by DC electron beam or DC pulse plasma jet, according to the modes recommended on the basis of model calculations of the temperature profiles at irradiation. The transmission electron microscopy and X-ray analysis have revealed that irradiation leads to an increase in the volume fraction of reinforcing nanosized intermetallic components in the coatings. There were established certain similarities and differences in the structure and properties of the coatings modified by different types of irradiation. The microhardness of the irradiated coatings has increased in both cases along with the growth of the volume fraction of the CrNi₃ particle phase. However, it was found that the diffusion zone in the coatings modified by plasma jet is higher than that of the coatings modified by electron irradiation. The coating surface melted by the electron beam has a marked reduction of its roughness and better homogenization of the microstructure therefore demonstrating better adhesion and corrosion resistance.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 838-841
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Microscopic Luminescence Properties of ZnO and ZnO Based Heterostructures
Autorzy:
Bertram, F.
Christen, J.
Powiązania:
https://bibliotekanauki.pl/articles/2046894.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Hk
78.66.Hf
81.05.Dz
81.15.Gh
Opis:
The optical properties of excitonic recombinations in ZnO are investigated by spatially and spectrally resolved cathodoluminescence measurements. The relevance of cathodoluminescence microscopy as a spatially resolved luminescence technique as a simple but very powerful characterization method is stressed out in discussions of a wide variety of appropriate examples. A thorough discussion of the various features of the cathodoluminescence of an undoped ZnO bulk crystal, epitaxially grown ZnO and MgZnO/ZnO/MgZnO quantum well structure is given. Particular attention is devoted to the impact of the internal electrical fields, e.g. the Franz-Keldysh effect in ZnO. Furthermore, this study focuses on the spectral variations as a function of depth to the interface in ZnO homo- and heterostructures. Our aim is to establish the nature of the optical transitions influenced by internal fields, defects and impurity doping in ZnO/GaN and ZnO/ZnO interfaces. This review covers also the vertical transport, diffusion and capture of carriers in a MgZnO/ZnO/MgZnO quantum well structure.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 103-110
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
GaSb Dots Grown on GaAs Surface by Metalorganic Chemical Vapour Deposition
Autorzy:
Bożek, R.
Babiński, A.
Baranowski, J. M.
Stępniewski, R.
Klusek, Z.
Olejniczak, W.
Starowieyski, K.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1934054.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
We report metaloorganic chemical vapour deposition growth of an anisotropic GaSb islands on GaAs (001) surface with a typical dimensions around 200 nm. Results of investigations employing scanning electron microscope, scanning tunnelling microscope and ph9tocapacitance are presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 974-976
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and optical properties of boron nitride grown by MOVPE
Autorzy:
Dąbrowska, A.
Pakuła, K.
Bożek, R.
Rousset, J.
Ziółkowska, D.
Gołasa, K.
Korona, K.
Wysmołek, A.
Stępniewski, R.
Powiązania:
https://bibliotekanauki.pl/articles/1160531.pdf
Data publikacji:
2016-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.20.-e
Opis:
Boron nitride layers were grown on sapphire substrate by metal organic vapor phase epitaxy system that was originally designed for growth of GaN. Structures were characterized by scanning electron microscopy, atomic force microscopy, the Raman spectroscopy, absorption and time resolved photoluminescence. Presented results confirm successful deposition of BN layers and gives information about basic properties of the material. The Raman line at 1370 cm^{-1} and absorption edges at 5.6-5.9 eV were observed which is related to hexagonal phase.
Źródło:
Acta Physica Polonica A; 2016, 129, 1a; A-129-A-131
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanocrystalline CVD Diamond Coatings on Fused Silica Optical Fibres: Optical Properties Study
Autorzy:
Ficek, M.
Bogdanowicz, R.
Ryl, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402648.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
78.66.Qn
Opis:
Seeding and growth processes of thin diamond films on fused silica optical fibres have been investigated. Glass pre-treatment by dip coating in two detonation nanodiamond (DND) seeding media has been studied. The DND suspension in ethyl alcohol and dispersion of DND in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) were chosen for the seeding purpose. The grain size distribution of nanodiamond particles in both seeding media was kept at the same level (approximately 10-50 nm). After the seeding nanocrystalline diamond films were deposited on the fibres using microwave plasma assisted chemical vapour deposition system. The results of the process were investigated using numerical analysis of scanning electron microscopy images. The molecular structure of diamond has been examined with micro-Raman spectroscopy. Thickness, roughness and optical properties of the nanocrystalline diamond films in VIS-NIR wavelength range were investigated on reference samples using spectroscopic ellipsometry. Light reflection at the fibre end-face for different deposition parameters was also investigated. Proposed seeding method can be further effectively applied for manufacturing of optical fibre sensors. Due to extraordinary properties of diamond, which include high chemical and mechanical resistance, such films are highly desired for optical sensing purposes.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 868-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Do We Understand Magnetic Properties of ZnMnO?
Autorzy:
Godlewski, M.
Wójcik, A.
Kopalko, K.
Ivanov, V. Yu.
Wilamowski, Z.
Jakieła, R.
Guziewicz, E.
Szczepanik, A.
Dłużewski, P.
Chikoidze, E.
Barjon, J.
Dumont, Y.
Putkonen, M.
Niinistö, L.
Tang, Dong
Powiązania:
https://bibliotekanauki.pl/articles/2047644.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
75.75.+a
78.30.Fs
78.60.Hk
Opis:
Optical and magnetic properties of ZnMnO films are discussed based on the results of cathodoluminescence, photoluminescence, and magneto-photoluminescence investigations. We show that photoluminescence/cathodoluminescence emissions are strongly quenched and become in-plane inhomogeneous in samples with increased Mn fractions. Strong polarization of photoluminescence is observed, even though excitonic lines do not shift and are not split at magnetic fields up to 6 T.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 261-267
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Optical Properties of Laser-Assisted Chemical Vapour Deposited GaN
Autorzy:
Goldys, E. M.
Godlewski, M.
Tansley, T. L.
Powiązania:
https://bibliotekanauki.pl/articles/1969082.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
81.15.Gh
61.16.Ch
78.30.-j
Opis:
Properties of GaN epilayers grown by laser-assisted chemical vapour deposition are discussed. Good crystallinity and surface morphology of the films is demonstrated. Micro-Raman spectra are explained by scattering by small, randomly oriented cubic phase units present in the GaN film.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 331-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio
Autorzy:
Golunski, L.
Sobaszek, M.
Gardas, M.
Gnyba, M.
Bogdanowicz, R.
Ficek, M.
Plotka, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402345.pdf
Data publikacji:
2015-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
Opis:
The influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation. Microcrystalline diamond films were deposited on the seeded substrates in microwave plasma chemical vapour deposition using hydrogen-methane gas mixture. Seeding efficiency was investigated by means of scanning electron microscopy and Raman spectroscopy. Authors defined the new factor called as diamond ideality factor (di) which can give a quick estimation of quality of film and relative sp³ content. Few main peaks were identified at the following wave numbers: diamond sp³ peak 1332 $cm^{-1}$, D band peak 1355 $cm^{-1}$, C-H bending peak 1440-1480 $cm^{-1}$ and G band peak 1560 $cm^{-1}$. The best di was achieved for DMSO based colloid in all cases. The application of bias enhanced nucleation increases the diamond crystals size and the sp³/sp² ratio.
Źródło:
Acta Physica Polonica A; 2015, 128, 1; 136-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MOCVD of Perovskites with Metallic Conductivity
Autorzy:
Gorbenko, O. Yu.
Kaul, A. R.
Molodyk, A. A.
Novozhilov, M. A.
Bosak, A. A.
Babushkina, N. A.
Belova, L. M.
Krause, U.
Wahl, G.
Powiązania:
https://bibliotekanauki.pl/articles/1964529.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
68.55.-a
Opis:
Single source MOCVD techniques were used to prepare perovskite films with metallic conductivity (CaRuO$\text{}_{3}$, LaNiO$\text{}_{3}$, La$\text{}_{0.5}$Sr$\text{}_{0.5}$CoO$\text{}_{3}$ and (La,Pr)$\text{}_{0.7}$(Sr,Ca)$\text{}_{0.3}$MnO$\text{}_{3}$). Structural and electrical properties of the epitaxial layers on the coherent substrates are close to that of the films grown by pulsed laser deposition and magnetron sputtering. Peculiarities of the growth occur on the worse matched substrates, such as a mixture of two orientations, each aligned in the plane of the interface (LaNiO$\text{}_{3}$/MgO) and variant structures in the films on yttrium stabilized zirconia. X-ray diffraction of the films indicates pseudocubic lattice for all R$\text{}_{1-x}$A$\text{}_{x}$MO$\text{}_{3}$ films in spite of the distortions in the bulk material. The dependence of metal-insulator transition in R$\text{}_{1-x}$A$\text{}_{x}$MnO$\text{}_{3}$ on the nature of R and A and film-substrate lattice mismatch was studied.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 237-242
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Autorzy:
Grodzicki, M.
Wasielewski, R.
Surma, S.
Ciszewski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807513.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.65.Cf
81.15.Gh
72.80.Jc
79.60.Dp
68.37.Ps
Opis:
The surface of 6H-SiC(0001) samples was subjected to etching under $H_{2}$/Ar gas mixture in a cold-wall tubular furnace. Its topography and properties were characterized by atomic force microscopy and X-ray photoelectron spectroscopy before and after hydrogen etching. The conditions have been found, under which surface polishing-related damages could be removed. Si droplets were observed under certain etching conditions. The effect of the samples' cooling rate on the obtained surface morphology and chemistry was investigated to unveil the mechanism of Si recrystallization onto the crystal surface upon etching.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-82-S-85
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synchrotron Photoemission Study of Ferromagnetic (Zn,Co)O Films
Autorzy:
Guziewicz, E.
Lukasiewicz, M.
Wachnicki, L.
Kopalko, K.
Dłużewski, P.
Jakiela, R.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1492604.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.At
75.50.Pp
81.05.Dz
81.15.Gh
Opis:
The electronic structure of ferromagnetic (Zn,Co)O films was investigated by resonant photoemission across the Co 3p → Co 3d photoionization threshold, e.g. using photon energy between 50 eV and 66 eV. The films were grown by atomic layer deposition at temperature between 160C and 300C and they differed in distribution and content of cobalt. The maximum of the Fano resonance was observed at photon energy 63 eV, whereas the minimum at 58 eV. The difference between energy distribution curves taken at 63 eV and the one taken at 58 eV was calculated for a series of samples. It shows that the Co 3d contribution to the valence band electronic structure of ferromagnetic (Zn,Co)O films differs significantly from that of the films which show the paramagnetic response.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-040-A-042
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dual-Frequency Plasma Enhanced Chemical Vapor Deposition of Diamond-Like Carbon Thin Films
Autorzy:
Jamshidi, R.
Hosseini, S.
Ahmadizadeh, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1419912.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
Opis:
Dual-frequency plasma enhanced chemical vapor deposition was used to grow diamond-like carbon thin films from $CH_4,$ $H_2$ gas mixture. The effects of radio frequency, microwave power, and gas ratio were investigated. Various species have been identified in the $CH_4-H_2$ plasma using optical emission spectroscopy and their effects on film properties have been studied. Increasing the RF power to 400 W, the variation trend of refractive index and CH, $C_2$ intensity ratios change beyond the 300 W, but the growth rate shows the continuous increasing character from 6 to 11.6 nm/min. Increasing the hydrogen content in the system, the intensity ratio of CH, $C_2$, $CH^{+}$ and growth rate show decreasing tendency and the refractive index rises from 1.98 to 2.63. Adding MW produced plasma to the system grows the refractive index to 2.88 and growth rate to 10.8 nm/min. The water contact angle rises from 58.95° to 73.74° as the RF power increases to 300 W but begins to reduce until 400 W. In addition, the contact angle shows a growing tendency by increasing the hydrogen flow to the chamber. In addition, the structures of the films were investigated by the Raman spectroscopy.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 230-235
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 47

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