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Tytuł:
Properties of ZnO and ZnMnO Thin Films Obtained by Pulsed Laser Ablation
Autorzy:
Virt, I.
Hadzaman, I.
Bilyk, I.
Rudyi, I.
Kurilo, I.
Frugynskyi, M.
Potera, P.
Powiązania:
https://bibliotekanauki.pl/articles/1549722.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
81.15.Fg
72.80.Ey
78.20.Ci
Opis:
The results of experimental investigation of structural and physical properties of ZnO and ZnMnO films are presented in this work. The films of ZnO and $Zn_{1-x}Mn_{x}O$ of different thickness were obtained on $Al_{2}O_{3}$, glass, and KCl substrates in vacuum of 1 × $10^{-5}$ Torr by the pulsed laser deposition method. The samples were obtained under the substrate temperature 300-473 K. A thickness of films was in the range of 0.5-1 μm depending on the number of laser pulses. The structure of target bulk materials was investigated by X-ray diffraction method. A structure of laser deposited films was investigated by the transmission high-energy electron diffraction method. Electric resistivity was measured in the temperature range 77-450 K. The presence of two activation energies in the temperature range 300-330 K and 330-450 K is followed from the analysis of the films electrical resistivity. These activation energies correspond to two deep donor's energy levels. The shallow donor's level is connected with manganese presence. Optical transmission of ZnO and ZnMnO films deposited at various temperatures were investigated.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 34-37
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetism and structure evolution in Ni-Zn ferrites thin films - CEMS study
Autorzy:
Szumiata, T.
Gzik-Szumiata, M.
Brzózka, K.
Górka, B.
Gawroński, M.
Javed, A.
Farman, K.
Fatima, T.
Powiązania:
https://bibliotekanauki.pl/articles/1054837.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.80.+y
81.15.Fg
81.05.Je
Opis:
In this work, a ⁵⁷Fe conversion electron Mössbauer spectrometry and X-ray diffraction have been utilized in order to investigate the structural and magnetic order in 500 nm thick Ni-Zn ferrite films deposited on Si(100) substrate by laser ablation. Considering the contributions of the conversion electron Mössbauer subspectra corresponding to the tetrahedral (A) and octahedral (B) sites, the spinel inversion parameter in [Zn_{x}Fe_{1-x}]^{A}[Ni_{1-x}Fe_{1+x}]^{B}O₄ films has been estimated. The hyperfine field (B_{hf}) values in the investigated Ni-Zn ferrites thin films are about 5-8% smaller than those of bulk ferrites, which could be a sign of thermal magnetic relaxations due to the size effects. The distribution of hyperfine magnetic field directions was found to be affected by perpendicular anisotropy.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 836-838
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of epitaxial LSMO films grown on STO substrates
Autorzy:
Španková, M.
Štrbík, V.
Chromik, Š.
Zheng, D.
Li, J.
Machajdík, D.
Kobzev, A.
Plecenik, T.
Sojková, M.
Powiązania:
https://bibliotekanauki.pl/articles/1054697.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Ps
75.47.Lx
75.70.Ak
81.15.Fg
Opis:
Epitaxial manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) layers, with a thickness of 20-50 nm, are prepared on single crystal (001) SrTiO₃ (STO) substrates by pulsed laser deposition technique. Structural characterization (composition analysis, surface morphology), investigated by the Rutherford backscattering spectroscopy and atomic force microscopy, reveals the growth of stoichiometric LSMO films with a smooth surface (root-mean-square value of 0.21-1.6 nm). The prepared LSMO films possess high Curie temperature ( ≈ 412 K), low room temperature resistivity (1-2 mΩ cm) and maximum of temperature coefficient of resistivity TCR = 2.7% K¯¹ at 321 K.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 848-850
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LSMO Films with Increased Temperature of MI Transition
Autorzy:
Španková, M.
Chromik, Š.
Dobročka, E.
Štrbík, V.
Sojková, M.
Powiązania:
https://bibliotekanauki.pl/articles/1368201.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
75.47.Lx
81.15.Cd
81.15.Fg
Opis:
Epitaxial $La_{0.67}Sr_{0.33}MnO_{3}$ thin films with a significant increased temperature of metal-insulator transition (~450 K) are prepared on single crystal MgO (001) substrates using different deposition techniques - a dc magnetron sputtering or a pulsed laser deposition. The crystalline perfection of the films is characterized by X-ray diffraction technique (rocking curve measurements and reciprocal space maps). As a consequence of different methods of the film preparation we show various types of the LSMO crystal structure. Our results indicate that all the LSMO layers grown on the MgO substrate with a lattice misfit of about 8% are relaxed.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 212-213
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Substrates Grown from the Vapor for ZnO Homoepitaxy
Autorzy:
Skupiński, P.
Kopalko, K.
Łusakowska, E.
Domukhovski, V.
Jakieła, R.
Mycielski, A.
Grasza, K.
Powiązania:
https://bibliotekanauki.pl/articles/1811990.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Dz
68.47.Fg
68.55.J-
68.37.Ps
81.10.Bk
81.15.-z
Opis:
The novel method of preparation of epi-ready ZnO substrates is demonstrated. The substrates were made of unique ZnO crystals grown by chemical vapor transport method using hydrogen as the transport agent. The effect of low-level doping (Mn, Co, Cu, and V) on the structural quality of the crystals was investigated. Atomic layer deposition was used to verify usability of the substrates for homoepitaxy. The thermal annealing prior to the atomic layer deposition process and effect of thermal annealing of the epitaxial layers was studied. The X-ray diffraction and atomic force microscopy methods were applied to study the structural quality of the ZnO layers. Detection of the dopants in the substrates by secondary ion mass spectroscopy made possible the measurement of the thickness of the layers. The obtained root mean square roughness for both the substrates and layers ranged between 0.2 nm and 5 nm, and was dependent on the sample crystallographic orientation and sequence of polishing and annealing procedures. The optimal recipe for the epi-ready substrate preparation was formulated.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1361-1368
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wear Behavior of DIN 1.2210 Steel Modified by a Pulse Plasma Technique
Autorzy:
Özbek, Y.
Gökkaya, T.
Yavaşcan, C.
Powiązania:
https://bibliotekanauki.pl/articles/1398727.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
Opis:
The microstructure and wear properties of pulse plasma treated AISI 4140 steel was investigated. The surface properties of the materials have been improved by modifying the surfaces of the DIN 1.2210 steel with pulse plasma technique. The sample surfaces have been modified by pulse plasma with C₃H₈, nitrogen and O₂ gases. Two different distances between the sample and nozzle and three different numbers of pulse were determined for modification process and the surface process was implemented by using tungsten electrode with 800 µF battery capacity. The optical images were taken of the materials which the surfaces were improved by using pulse plasma technique. The surface modified samples were subjected to X-ray diffraction analysis. Wear tests were performed in a linear wear test machine with 0.15 m/s constant sliding speed under 5 N loads for 200 m sliding distance. The wear rate was changed in accordance with process parameters. The wear resistance increased in the surface modified specimens was compared to that of non-modified ones. Worn surfaces of specimens were studied by scanning electron microscope and energy dispersive spectroscopy analyses techniques. It is determined that the thickness of modification layer changes regarding to the amount of new phases and sample-nozzle distance. It is approved the increase on wear resistance related to wolfram diffusion.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 588-591
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
NDT of Rating Impact of Laser Padding on the Surface Layer
Autorzy:
Napadłek, W.
Witoś, M.
Prusik, T.
Powiązania:
https://bibliotekanauki.pl/articles/1030457.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
81.15.Fg
03.75.Pp
81.70.Ex
81.70.Fy
75.50.Bb
06.20.-f
06.60.Mr
Opis:
The article presents the problem of quality control the paramagnetic material of weld overlays laser made on ferro- and paramagnetic materials (steels, cast iron). To assess the quality of weld overlays paramagnetic material, and also the impact of overheating, besides laboratory researches on Keyence optical microscope, used measurement of existing magnetization of magnetic field distribution. Examples of test results by magnetic memory of metals are presented. It has been found, that is expedient use magnetic methods to assess the quality the microstructure of laser pad welded surface layer (influence of heat generation, microstructure changes, chemical composition and own stresses).
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 707-709
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-Nitride Nanostructures for Infrared Optoelectronics
Autorzy:
Monroy, E.
Guillot, F.
Leconte, S.
Bellet-Amalric, E.
Nevou, L.
Doyennette, L.
Tchernycheva, M.
Julien, F. H.
Baumann, E.
Giorgetta, F.
Hofstetter, D.
Dang, Le Si
Powiązania:
https://bibliotekanauki.pl/articles/2046980.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.67.De
85.60.Gz
85.35.Be
81.15.Hi
81.07.St
Opis:
Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 295-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ab Initio Study of Functionalized Carbon Nanotubes
Autorzy:
Milowska, K.
Birowska, M.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791295.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.ae
31.15.E-
61.46.Fg
61.48.De
73.22.-f
81.07.De
Opis:
In the present paper, we study the stability of (9, 0), (10, 0), (11, 0) carbon nanotubes functionalized with simple organic molecules $-CH_{n}$ (for n = 2, 3, 4). Our studies are based on ab initio calculations within the framework of the density functional theory. We determine binding energies of the functionalized carbon nanotubes and the changes in the geometry and electronic structure caused by the functionalization. We observe the characteristic effects such as rehybridization of the bonds induced by fragments attached to carbon nanotubes and pentagon/heptagon (5/7) defects in $-CH_{2}$ functionalized carbon nanotubes. We study also dependence of the binding energies of the functionalized carbon nanotubes on the density of the adsorbed molecules and diameter of the single-wall carbon nanotubes. Our calculations reveal that the $-CH_{2}$ fragments exhibit the strongest cohesion and we determine the critical density of the $-CH_{2}$ fragments which could be adsorbed.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 841-843
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bioactive Glass Coatings Synthesized by Pulsed Laser Deposition Technique
Autorzy:
Kwiatkowska, J.
Suchanek, K.
Rajchel, B.
Powiązania:
https://bibliotekanauki.pl/articles/1490183.pdf
Data publikacji:
2012-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Fs
63.50.Lm
78.30.Ly
81.15.Fg
87.85.J-
Opis:
Surface modification of medical implants is often required to improve their biocompatibility or, through bioactive properties of the surface material, facilitate its intergrowth with the living tissue. Bioactive-glass coatings can serve that purpose for the bone implants. We report a successful preparation of silicate-phosphate bioactive-glass coating on titanium substrate using the pulsed laser deposition method and present the coating characterization in terms of bonding configuration and chemical activity. The former was studied with high-resolution Raman microspectroscopy and revealed the presence of structural units responsible for the material's bioactivity. The bioactivity was also tested directly, in vitro, by soaking the samples in the simulated body fluid and examining the result with the Raman spectroscopy. The Raman spectrum, typical of hydroxyapatite was observed proving that the bone-like-material formed on the coating's surface.
Źródło:
Acta Physica Polonica A; 2012, 121, 2; 502-505
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique
Autorzy:
Jia, Guo-Zhi
Yao, Jiang-Hong
Shu, Yong-Chun
Xing, Xiao-Dong
Pi, Biao
Powiązania:
https://bibliotekanauki.pl/articles/1808036.pdf
Data publikacji:
2009-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.55.Ln
68.65.Fg
68.65.Cd
Opis:
The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.
Źródło:
Acta Physica Polonica A; 2009, 115, 5; 944-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
Autorzy:
Gronin, S.
Sorokin, S.
Kazanov, D.
Sedova, I.
Klimko, G.
Evropeytsev, E.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1376051.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
78.55.Et
78.67.Hc
68.65.Fg
Opis:
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1096-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Manipulations with Atoms and Clusters
Autorzy:
Czajka, R.
Powiązania:
https://bibliotekanauki.pl/articles/1933857.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
61.16.Ch
85.42.+m
61.46.+w
Opis:
The investigation and fabrication of nanometer-scale structures becomes a reality due to the development of scanning tunneling microscopy and related techniques. The final goal, manipulations with the individual atoms and molecules, has been achieved. D.M. Eigler used the scanning tunneling microscope (working at low temperatures ca. 4 K) to position individual xenon atoms on a single-crystal nickel surface with atomic precision. Mesoscopic systems composed of metallic or non-metallic clusters are intensively studied because of their new and interesting properties, and perspectives of subsequent application in nanolithography in order to create various structures of a very high degree of miniaturization. In this review, (i) the potential of scanning probe microscopes for revealing subtle details of surfaces down to atomic resolution is presented, (ii) a variety of different atomic manipulations processes and other surface modifications are reviewed against the background of different, more or less universal approaches, and finally (iii) a few examples of cluster surface structures created and/or modified by means of scanning tunneling microscope are demonstrated.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 813-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Nevou, L.
Doyennette, L.
Julien, F. H.
Prystawko, P.
Kryśko, M.
Grzanka, S.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2046911.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Fg
78.66.-w
78.67.De
78.40.Fy
81.15.Hi
Opis:
Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 175-181
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Siekacz, M.
Kryśko, M.
Feduniewicz-Żmuda, A.
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Nevou, L.
Kheirodin, N.
Julien, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811923.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.De
68.65.Fg
73.21.Fg
81.15.Hi
Opis:
GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1093-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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