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Tytuł:
Effect of Laser Pulse Energy on the Optical Properties of Cu₂O Films by Pulsed Laser Deposition
Autorzy:
Aadim, K.
Hussain, A.
Abdulameer, M.
Powiązania:
https://bibliotekanauki.pl/articles/1401906.pdf
Data publikacji:
2015-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
Opis:
In this work copper oxide films (Cu₂O) were grown by pulsed laser deposition. The films were analyzed by X-ray diffraction and their thickness by using profilometer while the UV-VIS absorption spectra were recorded by using UV-VIS spectrometer. Pulsed Nd:YAG laser was used with varying its pulse energy, with distance between target and substrate 1 cm, and substrate temperature at room temperature, vacuum pressure was fixed at 6×10¯² mbar, number of pulses = 1000. The optical properties of as-grown film like energy gap has been measured experimentally and the effects of laser pulse energy on it were studied. There is linear relation between energy gap and pulse energy. The specific energy gap of Cu₂O film can be controlled by changing laser pulse energy and fixing other pulsed laser deposition parameter such as substrate temperature, distance between target and substrate, background pressure and number of pulses.
Źródło:
Acta Physica Polonica A; 2015, 128, 3; 419-422
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Excimer Laser Irradiation Effects on Properties of Crystalline YBaCuO Thin Films
Autorzy:
Abal'oshev, A.
Abal'osheva, I.
Lewandowski, S. J.
van der Beek, C. J.
Konczykowski, M.
Rizza, G.
Barbanera, S.
Powiązania:
https://bibliotekanauki.pl/articles/2038396.pdf
Data publikacji:
2004-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.25.Fy
74.72.Bk
74.78.Bz
81.15.Fg
Opis:
The influence of UV laser irradiation on the physical properties of epitaxial YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-δ}$ thin (<1μm) films fabricated by laser ablation was studied. The samples were irradiated by pulsed excimer laser beam at different incident energy densities E$\text{}_{ir}$≤130 mJ/cm$\text{}^{2}$, i.e. 2-3 times below the ablation threshold of YBaCuO. The analysis of the sample cross-section using transmission electron microscope shows that such irradiation forms a disordered layer on the top of the crystalline film. Sample surface amorphization was observed also by atomic force microscope. Due to strong UV irradiation absorption in YBaCuO this surface layer acts like a protective cover for the sample interior. Only a small reduction of superconducting critical temperature T$\text{}_{c}$ was observed. Both transport measurements in normal state and magneto-optical studies in superconducting state indicate that between the disordered layer and the bottom non-modified part of the film there exists a wide transitional region with reduced carrier concentration.
Źródło:
Acta Physica Polonica A; 2004, 106, 5; 681-685
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of $YBa_2Cu_3O_{7-δ}$ Films Deposited by Laser Ablation on $CeO_2$-Buffered Sapphire
Autorzy:
Abal'osheva, I.
Zaytseva, I.
Aleszkiewicz, M.
Malinowski, A.
Bezusyy, V.
Syryanyy, Y.
Gierłowski, P.
Abal'oshev, O.
Kończykowski, M.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1374756.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
77.55.Px
81.15.Fg
Opis:
In this work we study the growth, by pulsed laser deposition, of $YBa_2Cu_3O_{7-δ}$ (YBCO) films on the $CeO_2$-buffered R-cut sapphire substrates, with the buffer layer recrystallized prior to the deposition of superconductor. We find that the superconducting critical temperature and the critical current density of the films are very close to similar parameters for the YBCO films grown on lattice-matched single crystalline substrates. It appears that the structural defects in the buffer layer affect the microstructure of YBCO films, resulting in high values of the critical current density, suitable for applications.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-69-A-72
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optimization of the Superconducting Properties of Laser Ablated $YBa_2Cu_3O_{7-δ}$ Films on $CeO_2$-Buffered Sapphire
Autorzy:
Abal'osheva, I.
Zaytseva, I.
Aleszkiewicz, M.
Syryanyy, Y.
Gierłowski, P.
Abal'oshev, O.
Bezusyy, V.
Cieplak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1431267.pdf
Data publikacji:
2012-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
77.55.Px
81.15.Fg
Opis:
We use pulsed laser deposition to grow $YBa_2Cu_3O_{7-δ}$ (YBCO) superconducting films for microwave applications. The films are grown on R-cut sapphire substrates, with $CeO_2$ buffer layers, which are re-crystallized at high temperature prior to YBCO growth. Using the atomic force microscopy (AFM) and X-ray diffractometry we determine the optimal temperature for recrystallization (1000°C) and the optimal buffer layer thickness (30 nm). The properties of YBCO films of various thickness, grown on the optimized $CeO_2$ buffer layers, are studied using several methods, including AFM, magnetooptical imaging, and transport experiments. The YBCO film roughness is found to increase with the increasing film thickness, but the magnetic flux penetration in the superconducting state remains homogeneous. The superconducting parameters (the critical temperature and the critical current density) are somewhat lower than the similar parameters for YBCO films deposited on mono-crystalline substrates.
Źródło:
Acta Physica Polonica A; 2012, 121, 4; 805-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Nitrogen Plasma Afterglow on Amorphous Carbon Nitride Thin Films Deposited by Laser Ablation
Autorzy:
Alkhawwam, A.
Abdallah, B.
Kayed, K.
Alshoufi, K.
Powiązania:
https://bibliotekanauki.pl/articles/1493712.pdf
Data publikacji:
2011-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.33.Xj
81.15.Fg
78.30.Jw
68.49.Uv
68.37.Ps
68.37.Hk
Opis:
By employing pulsed laser deposition, amorphous carbon nitride $(a-CN_{x})$ thin films, were prepared on unheated Si (100). Investigation of compositional and structural modifications induced by microwave nitrogen plasma afterglow on amorphous carbon nitride thin films, has been carried out in the range of nitrogen pressure 10-1000 Pa. The role of nitrogen plasma afterglow on the physicochemical and structural characteristics of a-$CN_{x}$ was explored using the diagnostic techniques: Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Upon analyzing the Raman and X-ray photoelectron spectra, it is concluded that employing nitrogen plasma afterglow during the films deposition favors, in general, the increase in nitrogen content and the formation of $sp^2$ bonding in the a-$CN_{x}$ films. The analysis of scanning electron and atomic force microscopy images demonstrated that the films had a granular structure formed from particles coalesced together into cauliflower-like clusters and the particles size increased by increasing nitrogen pressure. A 2D atomic force microscopy line profile measurements provide evidence to a decrease in size of clusters using nitrogen plasma afterglow which could be due to the annihilation of excess vacancies and/or the elimination of grain boundaries. These analyses were found to be quite reliable to help understand the effects of microwave nitrogen plasma afterglow on amorphous carbon nitride thin films.
Źródło:
Acta Physica Polonica A; 2011, 120, 3; 545-551
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
Autorzy:
Anisimovas, F.
Butkutė, R.
Devenson, J.
Maneikis, A.
Stankevič, V.
Pyragas, V.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813391.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
73.43.Qt
75.47.Lx
81.15.Fg
Opis:
We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 997-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Ca Content on the Structure and Properties οf (Co,Ca)O Thin Films Deposited by PLD Technique
Autorzy:
Cieniek, L.
Kac, S.
Powiązania:
https://bibliotekanauki.pl/articles/1537944.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
81.15.-z
81.15.Aa
68.55.-a
68.60.Bs
68.37.-d
68.55.jd
Opis:
In this paper the results of investigations of pure and Ca-doped CoO thin films deposited by PLD technique are presented. The studies carried out for variable Ca content allowed to establish optimal conditions for good quality oxide films preparation. The microstructure, chemical/phase composition and morphology of obtained thin films were examined by means of diverse techniques (SEM, EDS, XPS and XRD). For estimation of deposited Ca-doped CoO films quality the nanohardness and scratch tests (adhesion) were performed. Obtained results confirm that using PLD technique it is possible to carry stoichiometric composition of (Co,Ca)O from target to single crystal substrate and allow to conclude that the calcium dopant concentration (chemical composition) influence on the morphology and measured properties of deposited (Co,Ca)O films.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 803-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Crack Free GaInN/AlInN Multiple Quantum Wells Grown on GaN with Strong Intersubband Absorption at 1.55μm
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Nevou, L.
Doyennette, L.
Julien, F. H.
Prystawko, P.
Kryśko, M.
Grzanka, S.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2046911.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.65.Fg
78.66.-w
78.67.De
78.40.Fy
81.15.Hi
Opis:
Crack free GaInN/AlInN multiple quantum wells were grown by rf plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect for growth of intersubband structures on GaN. Indium contained ternary compounds of barrier and well layers are contrary strained to the substrate material. A series of crack free GaInN/AlInN intersubband structures on (0001) GaN was fabricated and investigated. The assumed composition and layered structure were confirmed by room temperature photoluminescence and X-ray diffraction measurements. The intersubband measurements were done in multipass waveguide geometry by applying direct intersubband absorption and photoinduced intersubband absorption measurements. The optimized structure design contains forty periods of Si-doped GaInN/AlInN quantum wells and exhibits strong intersubband absorption.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 175-181
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Intersubband Absorption in GaInN/AlInN Quantum Wells
Autorzy:
Cywiński, G.
Skierbiszewski, C.
Siekacz, M.
Kryśko, M.
Feduniewicz-Żmuda, A.
Gladysiewicz, M.
Kudrawiec, R.
Misiewicz, J.
Nevou, L.
Kheirodin, N.
Julien, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811923.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
78.67.De
68.65.Fg
73.21.Fg
81.15.Hi
Opis:
GaInN/AlInN multiple quantum wells were grown by RF plasma-assisted molecular beam epitaxy on (0001) GaN/sapphire substrates. The strain-engineering concept was applied to eliminate cracking effect and to improve optical parameters of intersubband structures grown on GaN substrates. The high quality intersubband structures were fabricated and investigated as an active region for applications in high-speed devices at telecommunication wavelengths. We observed the significant enhancement of intersubband absorption with an increase in the barrier thickness. We attribute this effect to the better localization of the second electron level in the quantum well. The strong absorption is very important on the way to intersubband devices designed for high-speed operation. The experimental results were compared with theoretical calculations which were performed within the electron effective mass approximation. A good agreement between experimental data and theoretical calculations was observed for the investigated samples.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1093-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Manipulations with Atoms and Clusters
Autorzy:
Czajka, R.
Powiązania:
https://bibliotekanauki.pl/articles/1933857.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Fg
61.16.Ch
85.42.+m
61.46.+w
Opis:
The investigation and fabrication of nanometer-scale structures becomes a reality due to the development of scanning tunneling microscopy and related techniques. The final goal, manipulations with the individual atoms and molecules, has been achieved. D.M. Eigler used the scanning tunneling microscope (working at low temperatures ca. 4 K) to position individual xenon atoms on a single-crystal nickel surface with atomic precision. Mesoscopic systems composed of metallic or non-metallic clusters are intensively studied because of their new and interesting properties, and perspectives of subsequent application in nanolithography in order to create various structures of a very high degree of miniaturization. In this review, (i) the potential of scanning probe microscopes for revealing subtle details of surfaces down to atomic resolution is presented, (ii) a variety of different atomic manipulations processes and other surface modifications are reviewed against the background of different, more or less universal approaches, and finally (iii) a few examples of cluster surface structures created and/or modified by means of scanning tunneling microscope are demonstrated.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 813-828
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy
Autorzy:
Gronin, S.
Sorokin, S.
Kazanov, D.
Sedova, I.
Klimko, G.
Evropeytsev, E.
Ivanov, S.
Powiązania:
https://bibliotekanauki.pl/articles/1376051.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
78.55.Et
78.67.Hc
68.65.Fg
Opis:
This paper reports on theoretical calculations and fabrication by molecular beam epitaxy of wide-gap II-VI heterostructures emitting in the "true" yellow range (560-600 nm) at room temperature. The active region of the structures comprises CdSe quantum dot active layer embedded into a strained $Zn_{1-x}Cd_{x}Se$ (x=0.2-0.5) quantum well surrounded by a Zn(S,Se)/ZnSe superlattice. Calculations of the CdSe/(Zn,Cd)Se/Zn(S,Se) quantum dot-quantum well luminescence wavelength performed using the envelope-function approximation predict rather narrow range of the total $Zn_{1-x}Cd_{x}Se$ quantum well thicknesses (d ≈ 2-4 nm) reducing efficiently the emission wavelength, while the variation of x (0.2-0.5) has much stronger effect. The calculations are in a reasonable agreement with the experimental data obtained on a series of test heterostructures. The maximum experimentally achieved emission wavelength at 300 K is as high as 600 nm, while the intense room temperature photoluminescence has been observed up to λ =590 nm only. To keep the structure pseudomorphic to GaAs as a whole the tensile-strained surrounding $ZnS_{0.17}Se_{0.83}$/ZnSe superlattice were introduced to compensate the compressive stress induced by the $Zn_{1-x}Cd_{x}Se$ quantum well. The graded-index waveguide laser heterostructure with a CdSe/$Zn_{0.65}Cd_{0.35}Se$/Zn(S,Se) quantum dot-quantum well active region emitting at λ =576 nm (T=300 K) with the 77 to 300 K intensity ratio of 2.5 has been demonstrated.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1096-1099
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Growth Parameters on Composition Distribution in Superlattice-in-Well Structure by Submonolayer Deposition Technique
Autorzy:
Jia, Guo-Zhi
Yao, Jiang-Hong
Shu, Yong-Chun
Xing, Xiao-Dong
Pi, Biao
Powiązania:
https://bibliotekanauki.pl/articles/1808036.pdf
Data publikacji:
2009-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Hi
68.55.Ln
68.65.Fg
68.65.Cd
Opis:
The superlattice-in-well structures were grown using a cycled submonolayer AlGaAs/GaAs deposition technique. The optical quality of Al-Ga interdiffusion in AlGaAs/GaAs superlattice was investigated by measuring the photoluminescence of samples grown at temperature from 610°C to 630°C. Results show that Al composition can be modulated under some growth temperature or period. Effect of the growth interrupt in the growth process of superlattice on film optical quality is also discussed. Especially, the role played by the period of superlattice in the process of obtaining high quality film material with low composition is investigated in detail.
Źródło:
Acta Physica Polonica A; 2009, 115, 5; 944-946
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bioactive Glass Coatings Synthesized by Pulsed Laser Deposition Technique
Autorzy:
Kwiatkowska, J.
Suchanek, K.
Rajchel, B.
Powiązania:
https://bibliotekanauki.pl/articles/1490183.pdf
Data publikacji:
2012-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.Fs
63.50.Lm
78.30.Ly
81.15.Fg
87.85.J-
Opis:
Surface modification of medical implants is often required to improve their biocompatibility or, through bioactive properties of the surface material, facilitate its intergrowth with the living tissue. Bioactive-glass coatings can serve that purpose for the bone implants. We report a successful preparation of silicate-phosphate bioactive-glass coating on titanium substrate using the pulsed laser deposition method and present the coating characterization in terms of bonding configuration and chemical activity. The former was studied with high-resolution Raman microspectroscopy and revealed the presence of structural units responsible for the material's bioactivity. The bioactivity was also tested directly, in vitro, by soaking the samples in the simulated body fluid and examining the result with the Raman spectroscopy. The Raman spectrum, typical of hydroxyapatite was observed proving that the bone-like-material formed on the coating's surface.
Źródło:
Acta Physica Polonica A; 2012, 121, 2; 502-505
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ab Initio Study of Functionalized Carbon Nanotubes
Autorzy:
Milowska, K.
Birowska, M.
Majewski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791295.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
31.15.ae
31.15.E-
61.46.Fg
61.48.De
73.22.-f
81.07.De
Opis:
In the present paper, we study the stability of (9, 0), (10, 0), (11, 0) carbon nanotubes functionalized with simple organic molecules $-CH_{n}$ (for n = 2, 3, 4). Our studies are based on ab initio calculations within the framework of the density functional theory. We determine binding energies of the functionalized carbon nanotubes and the changes in the geometry and electronic structure caused by the functionalization. We observe the characteristic effects such as rehybridization of the bonds induced by fragments attached to carbon nanotubes and pentagon/heptagon (5/7) defects in $-CH_{2}$ functionalized carbon nanotubes. We study also dependence of the binding energies of the functionalized carbon nanotubes on the density of the adsorbed molecules and diameter of the single-wall carbon nanotubes. Our calculations reveal that the $-CH_{2}$ fragments exhibit the strongest cohesion and we determine the critical density of the $-CH_{2}$ fragments which could be adsorbed.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 841-843
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-Nitride Nanostructures for Infrared Optoelectronics
Autorzy:
Monroy, E.
Guillot, F.
Leconte, S.
Bellet-Amalric, E.
Nevou, L.
Doyennette, L.
Tchernycheva, M.
Julien, F. H.
Baumann, E.
Giorgetta, F.
Hofstetter, D.
Dang, Le Si
Powiązania:
https://bibliotekanauki.pl/articles/2046980.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.Fg
78.67.De
85.60.Gz
85.35.Be
81.15.Hi
81.07.St
Opis:
Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 295-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 22

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