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Tytuł:
A Short Review on Fluoride Laser Crystals Grown by Czochralski Method at IPEN
Autorzy:
Baldochi, S.
Ranieri, I.
Powiązania:
https://bibliotekanauki.pl/articles/1399462.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
42.70.-a
42.70.Hj
Opis:
In this article there are presented the developments on the crystal growth by the Czochralski method of fluoride laser materials at the Center for Lasers and Applications from Institute of Nuclear and Energy Research, IPEN, Brazil. A brief report of the Czochralski furnace preparation for fluorides growth regarding to its construction materials, influence of the heating assemblies in the thermal profiles and the benefits of using a suitable atmosphere is provided. Moreover, to demonstrate the importance of this technique to the advances on laser systems over the last years there are described the specific growth conditions established to obtain fluoride crystals with suitable properties for practical application as laser hosts. $LiREF_4$ (RE = rare earth) scheelite crystals have been studied to compare $LiYF_4$ (YLF) with its isomorphs, including solid solutions of the type-$LiY_{1-x}Ln_{x}F_4$ (Ln = Gd or Lu) and $LiGd_{1-x}Lu_{x}F_4$, relating to their optical quality, spectroscopic and laser properties. Some results regarding the development of new laser hosts of these materials doped with Nd, Er, Pr and co-doped Yb, Nd and Tm are also presented. The growth particularities of transition metals doped fluoride crystals such as $BaLiF_3$:TM (TM = Ni and Co) and $LiSrAlF_6$:Cr are also reported.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 286-294
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Decomposition Processes in the Anomalous Supersaturated Solid Solution of Binary and Ternary Aluminium Alloys Alloyed with~Sc and~Zr
Autorzy:
Berezina, A.
Monastyrska, T.
Molebny, O.
Nosenko, V.
Kotko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1418937.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.dg
81.07.Bc
81.10.Fq
Opis:
Decomposition of supersaturated solid solution of aluminium alloys alloyed with Sc and Zr have been studied in the work. The binary hypereutectic Al-Sc alloys, hyperperitectic Al-Zr alloys and ternary Al-Sc-Zr alloys were chosen. Alloys were obtained by the melt-spinning. Melts were quenched from temperatures of T = 1000C and T = 1400°C. The crystallization of anomalously supersaturated solid solution ($T_\text{quen.}$ = 1400°C) or the crystallization with the formation of "fan" structure ($T_\text{quen.}$ = 1000°C) are possible. The decomposition of anomalously supersaturated solid solution is continuous, with the precipitation of nanosized spherical $Al_3X$ (X = Sc, Zr) particles. The loss of thermal stability of Al-Sc alloys is due to the loss of coherence of the strengthening $Al_3Sc$ phase. In Al-Zr alloys the loss of strength is due to the formation of a stable tetragonal $DO_{23}$-ordered $Al_3Zr$ phase. After co-alloying of Al by Sc and Zr a bimodal grained structure was observed for the hypereutectic ternary alloy ($T_\text{quen.}$ = 1400°C). Nanosized grains of 50-60 nm were present on the boundaries of 1-2 μm large-sized grains. Transmission electron microscopy shows the formation of nanocomposite $Al_3Zr//Al_3Sc$ particles. The formation of $Al_3Zr$ shell changes the nature of the interfacial fit of the particle with the matrix and slows down the decomposition during the coalescence.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 539-543
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Sass, J.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1964370.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.50.Ks
68.35.Bs
Opis:
The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 201-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Crystal-Melt Interface and Surface Tension on Czochralski Growth of Substrate Materials with K$\text{}_{2}$NiF$\text{}_{4}$ Structure
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Gutowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1964368.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
81.10.-h
68.10.Cr
47.20.Dr
Opis:
Crystal-melt interface was investigated during Czochralski growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨001⟩ oriented seeds. Relations between the ratio of the core diameter, grown on (001) plane, and the crystal diameter, as a function of seed rotation speed were determined. It was confirmed that it is possible to control the core diameter during the crystal growth. A new module was introduced into the crystal growth controlling program. It enables to estimate the surface tension coefficient between crystal and melt at the beginning of crystallization. This value is then used to compute proper corrections for automatic weighting system.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 197-200
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solid Solutions of Oxide Crystals as Substrates for Epitaxial Layer Depositions
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Aleksijko, R.
Diduszko, R.
Byszewski, P.
Kikalejshvili-Domukhovska, R.
Powiązania:
https://bibliotekanauki.pl/articles/2046725.pdf
Data publikacji:
2006-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.-h
81.10.Fq
61.10.Nz
74.78.Bz
Opis:
We present results of investigation on growth of solid solution crystals with perovskites and K$\text{}_{2}$NiF$\text{}_{4}$ structures used as substrates for epitaxy. Perovskite single crystals with no twins and crystals with K$\text{}_{2}$NiF$\text{}_{4}$ structure with the lattice parameter in the range 3.876-3.819Å and 3.754 to 3.688Å, respectively, can be grown. Here preliminary results on investigation on growth of other solid solution crystals with the lattice constant from 3.946 to 3.688Å are also presented thus covering the whole interesting range for depositing oxide materials. These crystals can be grown by the Czochralski method that secures their high structural quality. Discussed crystals are resistant to reaction with the deposited oxide layers.
Źródło:
Acta Physica Polonica A; 2006, 109, 4-5; 457-463
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
SrLaGaO$\text{}_{4}$-SrLaAlO$\text{}_{4}$ Solid Solutions - Substrate Materials with Tuneable Lattice Parameter for Various HTSC Compounds
Autorzy:
Berkowski, M.
Fink-Finowicki, J.
Mojaiskaia, E.
Powiązania:
https://bibliotekanauki.pl/articles/1964363.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.-d
81.10.Fq
61.50.Νw
64.75.+g
Opis:
The increase in Τ$\text{}_{c}$ for high temperature superconductors can be realized, among others, by appropriate substrate/film combinations. SrLaGaO$\text{}_{4}$-SrLaΑlO$\text{}_{4}$ solid solutions were grown by the Czochralski method. The already achieved results allow to obtain single crystals of SrLaΑl$\text{}_{1-x}$Ga$\text{}_{x}$O$\text{}_{4}$ with lattice constant a in the range from 0.3754 to 0.3775 nm, and SrLaGa$\text{}_{1-x}$Αl$\text{}_{x}$O$\text{}_{4}$ crystals with lattice constant a in the range from 0.3843 to 0.3826 nm. Electron-probe microanalysis along obtained single crystals was used for determination of segregation coefficient between aluminum and gallium ions.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 182-186
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Will Czochralski Growth of Sapphire Once Again Prevail?
Autorzy:
Bruni, F.
Liu, C.
Stone-Sundberg, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399423.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
81.10.Aj
61.72.-y
Opis:
In the past decade there has been an explosive growth in the consumption of sapphire driven by the demands of the next generation of energy efficient general lighting based on GaN LEDs. This application requires orienting these rhombohedral corundum crystals such that the substrate surface is the c-plane; a basal plane defined using hexagonal axes. Sapphire crystals form a strong facet on the c-plane, and growth in that direction generally results in crystals with high defect densities, particularly dislocations, and low angle grain boundaries. To overcome this drawback, the usual methodology is to grow the crystal in the a-direction and then core drill rods perpendicularly which are then sliced into c-plane substrates. For all crystal growth techniques commonly employed for sapphire, this approach suffers from poor material utilization. Although this has generally been viewed as an acceptable trade-off in the manufacturing process as long as 2" substrates were the dominant market, as substrate diameters have increased towards 150 mm and larger, this compromise is no longer seen as a viable alternative because of the low material utilization and the high energy consumption of the growth process. This has led to a renewed look at the Czochralski process for more efficient c-axis substrate production.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 213-218
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Czochralski-Grown Silicon Crystals for Microelectronics
Autorzy:
Bukowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399431.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
85.40.-e
Opis:
The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 235-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research and Development of $ZnBO_{4}$ (B = W, Mo) Crystal Scintillators for Dark Matter and Double Beta Decay Searching
Autorzy:
Dubovik, A.
Vostretsov, Yu.Ya.
Grinyov, B.
Danevich, F.
Kraus, H.
Nagornaya, L.
Mikhailik, V.
Tupitsyna, I.
Powiązania:
https://bibliotekanauki.pl/articles/1549650.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
78.70.Ps
Opis:
Oxide crystal scintillators play a considerable role in fundamental and applied researches. However, working out of new generation of high-sensitivity equipment and new methods of research puts higher requirements. The $ZnBO_{4}$ (B = W, Mo) crystals were grown from charge in platinum crucibles with high frequency heating, using the Czochralski method. The raw powder with optimum composition was prepared by solid phase high temperature synthesis using ZnO and $BO_{3}$ (B = W, Mo) with 4-5N purity. Single crystals with sizes up to ∅ 50 × 100 mm were grown and scintillation elements of various sizes and shapes (cylinders, rectangular and hexahedron prisms) were produced. High spectrometric characteristics were obtained for $ZnWO_{4}:R$ = 8-10% under excitation by $\text{}^{137}Cs (E_{γ}$=662 keV), low radiation background (less than 0.2 mBq/kg) and low afterglow (0.002%, 20 ms after excitation). The obtained results demonstrate good prospects for $ZnWO_{4}$ and ZnMoO_{4} crystal scintillators for application in low-count rate experiments, searching for double beta decay processes, interaction with dark matter particles, and also studies of rare decay processes. The material has also a good potential for application in modern tomography, scintillation bolometers and for other major researches using scintillators.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 15-19
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Constitutional Supercooling in Czochralski Growth οf Heavily Doped Silicon Crystals
Autorzy:
Friedrich, J.
Stockmeier, L.
Müller, G.
Powiązania:
https://bibliotekanauki.pl/articles/1399427.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Aj
61.72.S-
61.72.uf
81.10.Fq
Opis:
This study analyses the phenomenon of constitutional supercooling, which is one of the major problems in industrial growth of heavily doped ($ > 10^{20} \text{atoms}//cm^3$) silicon crystals by the Czochralski technique. The systematic study is based on theoretical models and experimental data considering the effect of three important dopants (B, P, and As) in dependence of the relevant growth parameters for the Czochralski process. Based on these results, conclusions will be drawn for the stability limits of the Czochralski growth of dislocation-free heavily doped silicon crystals in dependence of the doping species and their concentration.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 219-226
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Superconductivity of $FeSe_{1 - x}$ and $FeTe_{1 - y}Se_{y}$ Crystals: Dependence on the Synthesis Methods, Starting Composition, and Growth Conditions
Autorzy:
Gawryluk, D.
Fink-Finowicki, J.
Wiśniewski, A.
Puźniak, R.
Domukhovski, V.
Diduszko, R.
Berkowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1537007.pdf
Data publikacji:
2010-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
74.25.Ha
74.62.Bf
74.70.Xa
81.10.Fq
Opis:
Syntheses of superconducting iron chalcogenides $FeSe_{1 - x}$ (x = 0-0.15) and $FeTe_{1 - y}Se_{y}$ (y = 0.3-0.55) were performed. Superconducting phase of iron selenide was obtained by the solid-state reaction and from liquid phase. The highest values of critical temperature ($T_c$ = 8.2-8.7 K) exhibit $FeSe_{1-x}$ obtained by the crystallization from a melt with excess of iron less than 1 mol%. The samples from a melt contain up to 78% of tetragonal phase, as estimated by the X-ray diffraction. Lattice parameters and unit cell volume for the samples exhibiting highest $T_{c}$ and sharpest transition to superconducting state are limited to narrow range, with c/a ratio close to 1.469. The samples with excess of selenium contain higher amount of hexagonal phase than stoichiometric one. Superconducting single-crystalline samples of $FeTe_{1 - y}Se_{y}$ (up to 100% of tetragonal phase) were obtained using Bridgman's method. When y value increases, the volume of unit cell decreases. The critical temperature $T_{c}$ changes from ≈ 11.5 K for y ≈ 0.3 to ≈ 14.7 K for y ≈ 0.5.
Źródło:
Acta Physica Polonica A; 2010, 118, 2; 331-335
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Titanium Doped Spinel Crystals
Autorzy:
Gritsyna, V.
Kazarinov, Yu.
Kobyakov, V.
Lytvynov, L.
Powiązania:
https://bibliotekanauki.pl/articles/1029653.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.10.Nz
42.70.Hj
Opis:
MgAl₂O₄ (magnesium aluminates spinel, MAS) single crystals doped with titanium ions obtained by the Verneuil method were non-uniformly colored along of the growth crystallographic direction. The crystals were characterized measuring lattice parameter, optical absorption spectra and relative concentration of impurity atoms (Ti, Mn, Cr, and Fe) in different spots of grown Ti:MAS boule. There was observed the correlation of the intensity of absorption band at 800 nm to the relative concentration of iron supporting the identification of this band with charge transfer transition in complexes Ti⁴⁺+Fe²⁺ → Ti³⁺+Fe³⁺. The new resonant structure at the wavelength of 470 nm was found and tentatively identified with the Fano resonance in the complexes formed by lattice defects and impurity ions.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 774-777
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Precipitates in Cd$\text{}_{1-x}$Ni$\text{}_{x}$Se Crystals Grown by the Bridgman Method
Autorzy:
Kachniarz, J.
Dynowska, E.
Miotkowska, S.
Paszkowicz, W.
Miotkowski, I.
Ramdas, A. K.
Powiązania:
https://bibliotekanauki.pl/articles/1921645.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.70.Wp
61.55.Hg
81.10.Fq
Opis:
Single crystals of Cd$\text{}_{1-x}$Ni$\text{}_{x}$Se alloys (x ranging from 0 to 0.075) were investigated using electron microprobe and X-ray diffraction. The analysis shows the presence of Ni-Se precipitates. The solubility limit of Ni is estimated to be 0.008.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 725-728
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coexistence of Ferromagnetism and Superconductivity in Rapidly Quenched Ni_2NbSn Heusler Alloy
Autorzy:
Kanuch, P.
Ryba, T.
Gamcová, J.
Kanuchova, M.
Durisin, M.
Saksl, K.
Vargova, Z.
Varga, R.
Powiązania:
https://bibliotekanauki.pl/articles/1032848.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
74.25.fc
74.25.Ha
74.62.Bf
74.70.Ad
75.50.Cc
Opis:
We present the study on production and structural, electric and magnetic properties of superconductive Ni₂NbSn Heusler alloy. The sample has been produced by melt-spinning method using tangential speed of copper wheel 20 m/s. Polycrystalline structure has been obtained showing single phase with B2 disorder with lattice constant a=6.1654 Å. Resistance measurement shows superconductive behavior with critical temperature close to 5 K. Magnetic measurements also exhibit diamagnetic contribution from superconductive phase. Additionally, the ferromagnetic state has been observed below 20 K, which points to the coexistence of magnetic and superconducting state.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 1057-1059
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analysis of Emission and Vibronic Transitions in Uranium(3+) Doped Cs$\text{}_{2}$LiYCl$\text{}_{6}$ Single Crystals
Autorzy:
Karbowiak, M.
Simoni, E.
Drożdżyński, J.
Hubert, S.
Powiązania:
https://bibliotekanauki.pl/articles/1945642.pdf
Data publikacji:
1996-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.Dq
33.55.Be
71.70.Ej
81.10.Fq
Opis:
Uranium(3+) doped single crystals of Cs$\text{}_{2}$LiYCl$\text{}_{6}$ with a 0.3 and 2.0% U$\text{}^{3+}$ concentration have been obtained by the Bridgman-Stockbarger method. Luminescence spectra of the crystals were recorded at 27 and 15 K, respectively. The emission bands observed in the visible and near infrared regions have been assigned to transitions from the $\text{}^{4}$I$\text{}_{11}\text{}_{/}\text{}_{2}$ , $\text{}^{4}$F$\text{}_{3}\text{}_{/}\text{}_{2}$ , and $\text{}^{4}$G$\text{}_{7}\text{}_{/}\text{}_{2}$ levels to the $\text{}^{4}$I$\text{}_{9}\text{}_{/}\text{}_{2}$ ground level.
Źródło:
Acta Physica Polonica A; 1996, 90, 2; 367-370
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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