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Wyświetlanie 1-15 z 44
Tytuł:
Structural Properties of Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te and Cd$\text{}_{1-x-y}$Mg$\text{}_{x}$Mn$\text{}_{y}$Te Crystals
Autorzy:
Miotkowska, S.
Dynowska, E.
Miotkowski, I.
Powiązania:
https://bibliotekanauki.pl/articles/1931663.pdf
Data publikacji:
1994-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.66.Dk
Opis:
Electron probe microanalysis and X-ray diffraction studies have been performed on samples of ternary Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te (0.05 ≤ x ≤ 0.09) and quaternary Cd$\text{}_{1-x-y}$Mg$\text{}_{x}$Mn$\text{}_{y}$Te (0.025 ≤ x ≤ 0.4; 0.025 ≤ y ≤ 0.7) alloys. The investigated samples were cut from 24 different ingots grown by Bridgman method. Microprobe examinations have revealed significant differences between actual and nominal content of Mg along the longitudinal direction for both ternary and quaternary ingots. In contrast to Mg, for most Cd$\text{}_{1-x-y}$Mg$\text{}_{x}$Mn$\text{}_{y}$Te samples the actual Mn content was within ±5% of nominal content. The lattice constants have been determined by X-ray powder diffraction method. Whereas Cd$\text{}_{1-x-y}$Mg$\text{}_{x}$Mn$\text{}_{y}$Te samples exhibit only zinc blende crystal structure for the entire region of x and y investigated, the Cd$\text{}_{1-x}$Mg$\text{}_{x}$Te alloy has two different structures depending on Mg content; a zinc blende structure below x = 0.5 and a wurtzite structure above it. In both alloys the lattice constant decreases with increasing Mg content.
Źródło:
Acta Physica Polonica A; 1994, 86, 4; 605-611
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Research and Development of $ZnBO_{4}$ (B = W, Mo) Crystal Scintillators for Dark Matter and Double Beta Decay Searching
Autorzy:
Dubovik, A.
Vostretsov, Yu.Ya.
Grinyov, B.
Danevich, F.
Kraus, H.
Nagornaya, L.
Mikhailik, V.
Tupitsyna, I.
Powiązania:
https://bibliotekanauki.pl/articles/1549650.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
78.70.Ps
Opis:
Oxide crystal scintillators play a considerable role in fundamental and applied researches. However, working out of new generation of high-sensitivity equipment and new methods of research puts higher requirements. The $ZnBO_{4}$ (B = W, Mo) crystals were grown from charge in platinum crucibles with high frequency heating, using the Czochralski method. The raw powder with optimum composition was prepared by solid phase high temperature synthesis using ZnO and $BO_{3}$ (B = W, Mo) with 4-5N purity. Single crystals with sizes up to ∅ 50 × 100 mm were grown and scintillation elements of various sizes and shapes (cylinders, rectangular and hexahedron prisms) were produced. High spectrometric characteristics were obtained for $ZnWO_{4}:R$ = 8-10% under excitation by $\text{}^{137}Cs (E_{γ}$=662 keV), low radiation background (less than 0.2 mBq/kg) and low afterglow (0.002%, 20 ms after excitation). The obtained results demonstrate good prospects for $ZnWO_{4}$ and ZnMoO_{4} crystal scintillators for application in low-count rate experiments, searching for double beta decay processes, interaction with dark matter particles, and also studies of rare decay processes. The material has also a good potential for application in modern tomography, scintillation bolometers and for other major researches using scintillators.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 15-19
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Czochralski-Grown Silicon Crystals for Microelectronics
Autorzy:
Bukowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1399431.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
85.40.-e
Opis:
The Czochralski method of crystal growth is used since 1950s in scientific and industrial laboratories for growth of single crystals of large size and high quality. The article presents the general characteristics and selected improvements of the Czochralski method, and discusses its meaning and advantages in growth of silicon single crystals playing a key role in microelectronics.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 235-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of Oxide Laser Crystals by Czochralski Method
Autorzy:
Zharikov, E.
Lis, D.
Subbotin, K.
Dudnikova, V.
Zaitseva, O.
Powiązania:
https://bibliotekanauki.pl/articles/1399457.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
42.70.Hj
Opis:
The growth of series of actual laser crystals belonging to different structural types by the Czochralski method is presented. The primary attention is given to single crystalline compounds and their solid solutions with garnet structure (scandium-containing rare-earth garnets with general formula ${LnSc}_3[ScMe]_2Me_3O_{12}$, Me = Al, Ga) as well as with olivine (forsterite $Mg_2SiO_4$) and scheelite structure (double tungstates and molybdates with formula $NaLn(TO_4)_2$, where T = Mo or W). The broad bands of luminescence and absorption produced by activator ions in these laser hosts that appear either as a result of structural disorder (garnets, scheelites) or due to the doping by transition metal ions (chromium in forsterite) join together these representatives of different structural classes and determine their application in photonics. The paper considers the problems of growing of large crystals with uniform distribution of components and dopants, determination of congruently melting composition, especially in compounds with complex isomorphism. The mutual influence of components and dopants, redistribution of ions along crystallographically non-equivalent sites in the structure, alteration of valency of transition metal ions accompanied with the change of their segregation coefficients under variation of redox conditions is discussed.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 274-285
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of the β Phase Flux Dissolution during Quasicrystal Formation
Autorzy:
Surowiec, M.
Bogdanowicz, W.
Sozańska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1373540.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.44.Br
Opis:
This study focuses mainly on the verification of a peritectic reaction during the crystallization of quasicrystals. The β and λ phases apparently provide the necessary material for crystallization of the quasicrystalline ψ phase. We present results of an experimental visualization of the evolution of the flux dissolution process of the high temperature β phase. Solidified droplets of the β phase, formed primarily by the surface tension of the liquid within a bubble or a shrinkage, after crumbling during the flux dissolution may contribute to the quasicrystal formation process according to a peritectic reaction: $β_{c}$ + λ + L → ψ, where $β_{c}$ denotes the crumbled β phase immersed in the liquid.
Źródło:
Acta Physica Polonica A; 2014, 126, 2; 594-596
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Vanadate Laser Crystals
Autorzy:
Yu, H.
Zhang, H.
Wang, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399465.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
42.55.Px
Opis:
Based on the invention and widely application of the Czochralski pulling method, vanadate crystals have been grown and commercialized in recent decades. In this paper, the growth and characterization of a series of neodymium doped vanadate crystals have been reviewed, including $Nd:YVO_4$, $Nd:GdVO_4$, and $Nd:LuVO_4$. The excellent thermal-mechanical and laser property make them to be used in many respects.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 301-304
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Solubility Limit of Ni in Cd$\text{}_{1-x}$Ni$\text{}_{x}$Te Crystals
Autorzy:
Miotkowska, S.
Miotkowski, I.
Dynowska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1931714.pdf
Data publikacji:
1994-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.66.Dk
Opis:
The Cd$\text{}_{1-x}$Ni$\text{}_{x}$Te crystals were grown by the Bridgman method. The investigated samples were cut from five different ingots with nominal contents of nickel varied from 0.005 to 0.05. The investigations were performed using X-ray powder diffraction method and energy dispersive and wavelength dispersive electron microprobe analysis. The samples were ałso examined in a scanning electron microscope. Examinations of wavelength dispersive electron microprobe analysis show that the actual contents of nickel differ from the nominal values. The solubility limit of nickel was determined to be x = 0.005. The precipitates of NiTe were found in samples of a greater content of nickel. Their dimensions were between 5 to 90 micrometers. X-ray powder diffraction measurements did not reveal any significant change of the lattice constant of investigated crystals in comparison with pure CdTe.
Źródło:
Acta Physica Polonica A; 1994, 86, 5; 737-739
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Evolution of Pb$\text{}_{1-x}$Cd$\text{}_{x}$Te Solid Solution Structure at High Temperatures
Autorzy:
Minikayev, R.
Dynowska, E.
Kamińska, E.
Szczerbakow, A.
Trots, D.
Story, T.
Szuszkiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/2048121.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Fs
81.10.Fq
Opis:
The recent successful growth of single, bulk Pb$\text{}_{1-x}$Cd$\text{}_{x}$Te crystals by self-selecting vapor transport method at the Institute of Physics of the Polish Academy of Sciences in Warsaw opened new opportunities to study the physical properties of this interesting material in detail. In this work we report the preliminary results of X-ray powder diffraction studies performed on a set of Pb$\text{}_{1-x}$Cd$\text{}_{x}$Te solid solutions (where x ≤ 0.056) at high temperatures (295 K ≤ T ≤ 1100 K) and analyzed with the Rietveld refinement. Our results demonstrate the necessity of some correction of the relevant phase diagram and of the solubility limit, known from the literature.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 699-701
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Review of the Automation of the Czochralski Crystal Growth Process
Autorzy:
Winkler, J.
Neubert, M.
Rudolph, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399420.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
81.10.Aj
02.30.Yy
Opis:
On the occasion of the centennial of the invention of the Czochralski crystal growth process by the Polish scientist Jan Czochralski, a review of selected strategies for the automatic control of this process is given. This review provides a sketch of the fundamental challenges of controlling the Czochralski process and the basic concepts of feedback control. Both early and modern approaches to the control of the Czochralski process are described. The discussion focuses on questions related to feed-forward control, feedback control, and state estimation. The presented methods rely on simple mathematical process models in contrast to the finite element model-based approaches typically used in crystal growth process design and analysis. Such mathematical models motivate both the structure and parameters of the chosen controller. A comprehensive list of references to background literature on this topic completes this survey.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 181-192
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Will Czochralski Growth of Sapphire Once Again Prevail?
Autorzy:
Bruni, F.
Liu, C.
Stone-Sundberg, J.
Powiązania:
https://bibliotekanauki.pl/articles/1399423.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
81.10.Aj
61.72.-y
Opis:
In the past decade there has been an explosive growth in the consumption of sapphire driven by the demands of the next generation of energy efficient general lighting based on GaN LEDs. This application requires orienting these rhombohedral corundum crystals such that the substrate surface is the c-plane; a basal plane defined using hexagonal axes. Sapphire crystals form a strong facet on the c-plane, and growth in that direction generally results in crystals with high defect densities, particularly dislocations, and low angle grain boundaries. To overcome this drawback, the usual methodology is to grow the crystal in the a-direction and then core drill rods perpendicularly which are then sliced into c-plane substrates. For all crystal growth techniques commonly employed for sapphire, this approach suffers from poor material utilization. Although this has generally been viewed as an acceptable trade-off in the manufacturing process as long as 2" substrates were the dominant market, as substrate diameters have increased towards 150 mm and larger, this compromise is no longer seen as a viable alternative because of the low material utilization and the high energy consumption of the growth process. This has led to a renewed look at the Czochralski process for more efficient c-axis substrate production.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 213-218
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Decomposition Processes in the Anomalous Supersaturated Solid Solution of Binary and Ternary Aluminium Alloys Alloyed with~Sc and~Zr
Autorzy:
Berezina, A.
Monastyrska, T.
Molebny, O.
Nosenko, V.
Kotko, A.
Powiązania:
https://bibliotekanauki.pl/articles/1418937.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.dg
81.07.Bc
81.10.Fq
Opis:
Decomposition of supersaturated solid solution of aluminium alloys alloyed with Sc and Zr have been studied in the work. The binary hypereutectic Al-Sc alloys, hyperperitectic Al-Zr alloys and ternary Al-Sc-Zr alloys were chosen. Alloys were obtained by the melt-spinning. Melts were quenched from temperatures of T = 1000C and T = 1400°C. The crystallization of anomalously supersaturated solid solution ($T_\text{quen.}$ = 1400°C) or the crystallization with the formation of "fan" structure ($T_\text{quen.}$ = 1000°C) are possible. The decomposition of anomalously supersaturated solid solution is continuous, with the precipitation of nanosized spherical $Al_3X$ (X = Sc, Zr) particles. The loss of thermal stability of Al-Sc alloys is due to the loss of coherence of the strengthening $Al_3Sc$ phase. In Al-Zr alloys the loss of strength is due to the formation of a stable tetragonal $DO_{23}$-ordered $Al_3Zr$ phase. After co-alloying of Al by Sc and Zr a bimodal grained structure was observed for the hypereutectic ternary alloy ($T_\text{quen.}$ = 1400°C). Nanosized grains of 50-60 nm were present on the boundaries of 1-2 μm large-sized grains. Transmission electron microscopy shows the formation of nanocomposite $Al_3Zr//Al_3Sc$ particles. The formation of $Al_3Zr$ shell changes the nature of the interfacial fit of the particle with the matrix and slows down the decomposition during the coalescence.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 539-543
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Homoepitaxial Growth of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ on Single Crystal YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ Substrates
Autorzy:
Morishita, T.
Zama, H.
Shiohara, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1964238.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
74.72.-h
81.15.Gh
Opis:
a- and c-axis oriented YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ (YBCO) films were epitaxially grown on (100) and (001) YBCO single-crystal substrates, respectively, by metalorganic chemical vapor deposition under the same preparation conditions including substrate temperature. As a Ba precursor Ba(DPM)$\text{}_{2}$-2tetraen was adopted. This precursor increased a deposition rate for YBCO films to 50 nm/h at 140°C. The substrates were formed from a 14.5x14.5x13 mm YBCO single crystal grown by a modified top-seeded crystal pulling method. Only a few surface atomic layers remained damaged after polishing and cleaning, which however did not affect the epitaxy of film growth. The crystallinity of the interface between an epilayer and substrate was much improved compared to that on usual perovskite substrates.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 97-103
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Crystal Growth of SrPrGaO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$
Autorzy:
Uecker, R.
Reiche, P.
Ganschow, S.
Uecker, D.-C.
Schultze, D.
Powiązania:
https://bibliotekanauki.pl/articles/1964229.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.30.Dz
81.10.Fq
81.05.Je
Opis:
Single crystals of SrPrGaO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ have been grown using the Czochralski technique. Both materials melt incongruently at 1462°C and 1516°C. The non-stoichiometric crystals contain more strontium than the starting melts. Constitutional supercooling is retarded by special growth conditions and optimum melt composition. Because of their small mismatch both crystals are recommended as substrates for YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7-x}$ epitaxy.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 23-34
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Investigation of $Nd_{1-x}Sm_{x}ScO_3$ and $Sm_{1-x}Gd_{x}ScO_3$ Solid-Solution Single Crystals
Autorzy:
Uecker, R.
Klimm, D.
Bertram, R.
Bernhagen, M.
Schulze-Jonack, I.
Brützam, M.
Kwasniewski, A.
Gesing, Th.
Schlom, D.
Powiązania:
https://bibliotekanauki.pl/articles/1399463.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.75.Nx
81.10.Fq
81.30.-t
Opis:
The pseudo-cubic lattice parameters of rare-earth (RE) scandate, $REScO_3$, single crystals grown by the Czochralski technique with RE = Dy to Pr lie between about 3.95 and 4.02 Å. These crystals are the only available perovskite substrates in this lattice constant range that can withstand virtually any thin film growth conditions. Two members of this series, $PmScO_3$ and $EuScO_3$, are, however, not suitable for substrate applications. Because the pseudo-cubic lattice parameters between neighbouring $REScO_3$ compounds decrease with rising atomic number of the RE in about 0.01 Å steps, the unsuitability of $PmScO_3$ (radioactivity) and $EuScO_3$ (incompatibility with Si) causes an interruption in this lattice spacing sequence. To replace them, solid solutions of their adjacent rare-earth scandates, i.e., $(Nd_{0.5}Sm_{0.5})ScO_3$ and $(Sm_{0.5}Gd_{0.5})ScO_3$, were grown by the Czochralski method. Their average pseudo-cubic lattice parameters of 3.9979 Å and 3.9784 Å are very close to those of $PmScO_3$ and $EuScO_3$, respectively, and they show very low segregation. These qualities make these solid solutions excellent substitutes for $PmScO_3$ and $EuScO_3$.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 295-300
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth and Characterization of Titanium Doped Spinel Crystals
Autorzy:
Gritsyna, V.
Kazarinov, Yu.
Kobyakov, V.
Lytvynov, L.
Powiązania:
https://bibliotekanauki.pl/articles/1029653.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.10.Fq
61.10.Nz
42.70.Hj
Opis:
MgAl₂O₄ (magnesium aluminates spinel, MAS) single crystals doped with titanium ions obtained by the Verneuil method were non-uniformly colored along of the growth crystallographic direction. The crystals were characterized measuring lattice parameter, optical absorption spectra and relative concentration of impurity atoms (Ti, Mn, Cr, and Fe) in different spots of grown Ti:MAS boule. There was observed the correlation of the intensity of absorption band at 800 nm to the relative concentration of iron supporting the identification of this band with charge transfer transition in complexes Ti⁴⁺+Fe²⁺ → Ti³⁺+Fe³⁺. The new resonant structure at the wavelength of 470 nm was found and tentatively identified with the Fano resonance in the complexes formed by lattice defects and impurity ions.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 774-777
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 44

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