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Wyświetlanie 1-15 z 52
Tytuł:
Optical Detection of Cyclotron Resonance in Serpentine Superlattice Quantum-Wire Arrays
Autorzy:
Świątek, K.
Weman, H.
Miller, M. S.
Petroff, P. M.
Merz, J. L.
Powiązania:
https://bibliotekanauki.pl/articles/1929679.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
76.40.+b
71.25.Jd
Opis:
We report low-temperature studies of microwave-induced cyclotron resonance of photo-generated carriers in (Al,Ga)As serpentine superlattice quantum-wire arrays. The geometric size of the parabolic-crescent cross-section of the quantum wires was of the order of 100 Å × 50 Å, depending on the angle of the vicinal substrate and the amount of parabolic curvature. Comparing the obtained spectra, we estimate the relative degree of carrier confinement in the ordered AlGaAs structure.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 583-586
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Molecular Beam Epitaxy Grown ZnSe on GaAs
Autorzy:
Karpińska, K.
Suchocki, A.
Godlewski, M.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/1929648.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
68.55.Ln
78.66.Fd
Opis:
Photoluminescence studies of molecular beam epitaxy grown ZnSe-on-GaAs layers are presented. The high sensitivity of the PL technique allowed for identification unintentional dopants in pure ZnSe sample. Characteristic photoluminescence lines due to extended defects were observed. The experimental results obtained show a correlation between intentional doping level and extended defects concentration. We conclude also that even though molecular beam epitaxy layers are grown at low temperature, the self-compensation mechanism may still be important. For heavily doped sample edge emission is deactivated likely due to efficient energy transfer link with deep donor-acceptor pair bands.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 551-554
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photo-ESR Study of the DX to Shallow Donor Conversion in Te Doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As
Autorzy:
Surma, M.
Żytkiewicz, Z. R.
Fronc, K.
Stalinga, P.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1929747.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
76.30.Lh
78.66.Fd
Opis:
Results of detailed electron spin resonance (ESR) study of Te doped Al$\text{}_{x}$Ga$\text{}_{1-x}$As epilayers with x = 0.41, 0.42, and 0.5 Al fractions are presented. It is shown that the ESR signal observed critically depends on cooling steps and that the shallow donor ESR signal can be observed prior to illumination. The first ESR study of AlGaAs layers with removed GaAs substrate are presented. The mechanism of the enhanced photosensitivity of the ESR signal is explained. It is found very paradoxical that the ESR signals decreases upon the illumination even though shallow donor concentration is increased.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 757-760
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acceptor in Quantum Dot in Cubic Semiconductors
Autorzy:
Janiszewski, P.
Suffczyński, M.
Powiązania:
https://bibliotekanauki.pl/articles/1943960.pdf
Data publikacji:
1995-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.61.Ey
73.20.Dx
Opis:
Energy levels and oscillator strengths for transitions between the lowest states of an acceptor in a quantum dot of finite potential barrier in cubic semiconductors have been computed in the effective-mass approximation. The degeneracy of the valence band in cubic semiconductors was taken into account in the spherical approximation. Variational envelope functions consisted of a finite basis of exponentials, and had to satisfy appropriate boundary conditions to ensure the hermiticity of the Hamiltonian matrix. In typical cubic semiconductors we have found enhanced values, by an order of magnitude, of oscillator strengths for the acceptor optical transitions in the dots of radii comparable to the acceptor diameter.
Źródło:
Acta Physica Polonica A; 1995, 88, 6; 1171-1177
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
Autorzy:
Teisseyre, H.
Perlin, P.
Leszczyński, M.
Suski, T.
Dmowski, L.
Grzegory, I.
Porowski, S.
Jun, J.
Moustakas, T. D.
Powiązania:
https://bibliotekanauki.pl/articles/1873040.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
78.50.Ge
78.66.Fd
Opis:
Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 403-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals
Autorzy:
Pakula, K.
Baranowski, J. M.
Stępniewski, R.
Wysmołek, A.
Grzegory, I.
Jun, J.
Porowski, S.
Sawicki, M.
Starowieyski, K.
Powiązania:
https://bibliotekanauki.pl/articles/1933937.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.55.Cr
Opis:
The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 861-864
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modulation Spectroscopy of Reduced Dimensional Semiconductor Systems
Autorzy:
Pollak, F. H.
Powiązania:
https://bibliotekanauki.pl/articles/1933677.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
78.66.Fd
78.40.Fy
Opis:
This paper reviews the background of modulation spectroscopy, particularly electromodulation, presents some recent room temperature results having both fundamental and technological significance, including two-dimensional electron gas effects in modulation-doped, pseudomorphic GaAlAs/InGaAs/GaAs single quantum wells (HΕΜΤ structures), quantum well laser structures and process-induced damage in quantum dot arrays fabricated by reactive ion etching.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 581-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Method for Studying Biaxial Deformation Effects on Optical Spectra of Quantum Wells
Autorzy:
Sosin, T. P.
Trzeciakowski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1931925.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.20.Dx
Opis:
The effects of large deformation were studied by preparing thin (20-30 μm) membranes with quantum-well layers on top. A small gas pressure of a few bar deforms the membrane substantially and changes the optical spectra of the quantum wells. We present the results of the photoluminescence and absorption from GaAs/AlGaAs and from InGaAs/GaAs quantum wells subjected to tensile and to compressive biaxial strain. The light-hole lines shift more than two times faster than the heavy-hole lines so that they cross under tensile strain.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 151-156
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures
Autorzy:
Godlewski, M.
Monemar, B.
Anderson, T. G.
Tsimperidis, I.
Gregorkiewicz, T.
Ammerlaan, C. A. J.
Muszalski, J.
Kaniewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1934059.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Jd
78.66.Fd
73.40.Kp
73.20.Dx
Opis:
Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 990-994
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Faraday Rotation in Multiple Quantum Wells of GaAs/AlGaAs
Autorzy:
Dudziak, E.
Bożym, J.
Pruchnik, D.
Wasilewski, Z. R.
Powiązania:
https://bibliotekanauki.pl/articles/1952529.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Ls
73.20.Dx
78.66.Fd
Opis:
We report on the results of first measurements of the Faraday rotation of modulated n-doped multiple quantum wells of GaAs/Al$\text{}_{x}$Ga$\text{}_{1-x}$As (x = 0.312). The measurements have been performed in the magnetic fields up to 13 T at the temperature of 2 K, in the spectral region of interband transitions. A rich structure of magneto-excitons has been found in the measured spectra. Faraday rotation (phase) measurements are proposed as an alternative method to photoluminescence excitation for investigations of magneto-excitons in quantum wells. The dependence of the measured Faraday rotation on magnetic field and hypothetical connections with quantum Hall effect are also discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1022-1026
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Inter-Island Energy Transfer in AlGaAs/GaAs Quantum Wells Grown by Molecular Beam Epitaxy
Autorzy:
Godlewski, M.
Holz, P. O.
Bergman, J. P.
Monemar, B.
Regiński, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952469.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.47.+p
73.20.Jc
Opis:
The results of photoluminescence, time-resolved photoluminescence, photoluminescence excitation and photoluminescence kinetics studies are presented for a Al$\text{}_{0.3}$Ga$\text{}_{0.7}$As/GaAs quantum well system grown without growth interruptions at the interfaces. The time-resolved photoluminescence measurements show drift of excitons towards lower energy states induced in a quantum well by potential fluctuations. We present also a first direct evidence for migration of free excitons from the 24 to 25 ML regions of the quantum well and interpret these results within a linear rate model, deriving the transition rate of 290 ps$\text{}^{-1}$. Such inter-island migration processes have been observed till now only in growth interrupted structures.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1007-1011
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Many-Exciton Complexes in Self-Assembled Quantum Dots
Autorzy:
Wójs, A.
Hawrylak, P.
Jacak, L.
Powiązania:
https://bibliotekanauki.pl/articles/1952721.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
71.45.Gm
78.66.Fd
Opis:
The system of interacting electrons and holes confined in a lens-shaped InGaAs self-assembled dot is studied using exact diagonalization techniques. The single-particle energy spectrum of self-assembled dot is well approximated by that of a quasi-two-dimensional atom with parabolic lateral confinement. The electronic shell structure of self-assembled dot is responsible for a remarkable dependence of the absorption/emission spectrum on the number of excitons. This is explained in terms of hidden symmetries leading to a formation of coherent many-exciton states of weakly interacting excitons and bi-excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1108-1112
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Second-Harmonic Generation in Nonparabolic Quantum Wells
Autorzy:
Załużny, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952741.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
42.65.Ky
Opis:
The second-harmonic generation due to the intersubband transitions in nonparabolic two-level quantum well systems is discussed theoretically taking into account the depolarization effect.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1118-1122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ Epitaxial Layers
Autorzy:
Świątek, K.
Piskorski, M.
Piotrowski, T. T.
Powiązania:
https://bibliotekanauki.pl/articles/1952715.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
78.66.Fd
Opis:
Photoluminescence spectra of Al$\text{}_{x}$Ga$\text{}_{1-x}$As$\text{}_{y}$Sb$\text{}_{1-y}$ layers (x = 0.2-0.5, y = 0.02-0.03) grown by liquid-phase epitaxy on GaSb substrates were studied in a wide temperature range (14-295 K). The temperature changes of energy and intensity of the layer and substrate emission were measured. Linear part of the temperature-induced energy shift of the Al$\text{}_{0.20}$Ga$\text{}_{0.80}$As$\text{}_{0.02}$Sb$\text{}_{0.98}$ band-to-band emission exhibits a slope of -0.3 meV/K and -0.45 meV/K at temperatures 150 K and 295 K, respectively.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1100-1102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoreflectance Measurements of InGaAs/GaAs Quantum Wells
Autorzy:
Tomaszewicz, T.
Korona, K. P.
Bożek, R.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952324.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Bd
73.20.Dx
78.66.Fd
Opis:
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 965-968
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 52

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