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Wyszukujesz frazę "78.50.Ge" wg kryterium: Temat


Tytuł:
Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
Autorzy:
Dreszer, P.
Baj, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1879457.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs
Autorzy:
Dmochowski, J. E.
Wang, P. D.
Stradling, R. A.
Powiązania:
https://bibliotekanauki.pl/articles/1888152.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 279-282
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction of Excitons Bound to 3d Transition Metal Ions with Lattice Vibrations in II-VI Semiconductors
Autorzy:
Sokolov, V. I.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1879516.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
78.50.Ge
Opis:
The analysis of an interaction of bound excitons with lattice vibrations for ZnO:Ni and ZnO:Cu is given on the basis of symmetry consideration.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 155-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intra-Shallow-Donor Photoconductivity in Semi-Insulating GaAs
Autorzy:
Karpierz, K.
Sadowski, M. L.
Powiązania:
https://bibliotekanauki.pl/articles/1877562.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.20.ls
78.50.Ec
78.50.Ge
Opis:
The far-infrared photoconductivity of a semi-insulating GaAs sample was measured at 4.2 K as a function of magnetic field up to 7 T. Apart from a peak corresponding to the 1s - 2p$\text{}_{+1}$ transition of the hydrogen-like shallow donor, a well-pronounced structure was observed which does not appear in n-type GaAs.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 121-124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Iron Impurity Related Optical Transitions in HgSe:Fe
Autorzy:
Szuszkiewicz, W.
Julien, C.
Balkanski, M.
Arciszewska, M.
Witkowska, B.
Mycielski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1891323.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Fr
71.70.-d
78.50.Ge
Opis:
Fe$\text{}^{2+}$ crystal field transitions and the heavy hole valence band to the Fe level transitions (e + Fe$\text{}^{3+}$ → Fe$\text{}^{2+}$) have been observed and discussed for HgSe doped with iron.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 437-440
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Induced Recovery of EL2 Defect from the Metastable Configuration
Autorzy:
Teisseyre, H.
Kuszko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1879968.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
The measurements: of changes in a magnitude of ΕL2 characteristic infrared absorption were used to investigate a phenomenon of light induced recovery of the defect from its metastable state in semi-insulating (SI) and n-type GaAs. At a temperature of 12K illumination with photons of energy 1.45 eV caused partial recovery for both SI and n-type samples. For n-type samples partial recovery occurred also after irradiation with photons of energy lower than 0.73 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 267-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Recombination Processes in ZnSe:Eu
Autorzy:
Świątek, K.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890962.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
76.30.Kg
78.50.Ge
Opis:
The photo-ESR and photoluminescence experiments have been performed on high-resistivity ZnSe:Eu crystals. We report the first evidence that the energy level of Eu$\text{}^{2+}$ ground state is located within the ZnSe forbidden gap, approximately 2.1 eV below the bottom of the conduction band.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 381-384
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon
Autorzy:
Kopalko, K.
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1890843.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD$\text{}^{+}$ . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Two Charge States of Sulphur in GaSb
Autorzy:
Dobaczewski, L.
Kaczor, P.
Karczewski, G.
Poole, I.
Powiązania:
https://bibliotekanauki.pl/articles/1879480.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.70.+q
78.50.Ge
71.55.Eq
Opis:
Results of the isothermal DLTS, photoconductivity, and photo-Hall measurements, showed that the sulphur-related center in GaSb, being a DX-type defect, has two charge states.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 133-136
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
Autorzy:
Jasiński, J.
Palczewska, M.
Korona, K.
Kamińska, M.
Bourret, E. D.
Elliot, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923836.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P$\text{}_{Ga}$ introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P$\text{}_{Ga}$ and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10$\text{}^{16}$ cm$\text{}^{-2}$.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy States of Ni in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se:Ni Solid Solutions
Autorzy:
Permogorov, S. A.
Tenishev, L. N.
Sokolov, V. I.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1921612.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
78.50.Ge
Opis:
Absorption and reflectivity measurements were carried out on Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se:Ni solid solutions. The spectra demonstrate the radical change of the structure of internal Ni$\text{}^{2+}$(3d$\text{}^{8}$) transitions at the presence of the Mn ions and strong dependence on Mn concentration. The threshold energy ħω$\text{}_{th}$ for the process of Ni photoionization to the valence band Ni$\text{}^{2+}$(3d$\text{}^{8}$) + ħω$\text{}_{th}$ → Ni$\text{}^{1+}$(3d$\text{}^{9}$) + h is shifted to the lower energy by 30 meV, but hardly depends on x despite the essential increase in the energy gap.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 705-708
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Field Emission Study of Germanium Thin Films on a Niobium Surface
Autorzy:
Bakhtizin, R.Ζ.
Suvorov, A.L
Zaripov, R.F.
Powiązania:
https://bibliotekanauki.pl/articles/1892517.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.50.Ge
Opis:
The behaviour of germanium on atomically clean niobium single crystal planes has been studied by probe-hole field emission microscopy as well as by means of the spectral analysis of field emission current fluctuations. Variations of average work function, surface diffusion activation energies, and slopes of the spectral density function with different coverages and substrate temperatures are measured.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 247-255
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation of the DX State by Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As - Experiment
Autorzy:
Dobaczewski, L.
Kaczor, P.
Missous, M.
Żytkiewicz, Z. R.
Dobosz, D.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1924251.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.38.+i
71.55.Eq
78.50.Ge
Opis:
A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 905-907
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:
Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransmission Measurements of Intra-Shallow-Donor Transitions in Semi-Insulating GaAs
Autorzy:
Karpierz, K.
Kożuchowski, K.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920976.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.20.Ls
78.50.Ge
Opis:
In this paper we present the results of an investigation of the 1s-2p$\text{}_{+}$ intra-shallow-donor transition by means of an extremely difficult magnetotransmission experiment performed on semi-insulating GaAs. We report the temperature dependence of the transition intensity. We noticed the absence in the absorbance spectra of a well-pronounced structure which is observed at low magnetic fields in photoconductivity measurements. The results are discussed in terms of a fluctuating potential from ionized centres in semi-insulating GaAs.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 617-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł

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