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    Wyświetlanie 1-9 z 9
    Tytuł:
    X-Ray Photoelectron Spectroscopy Study of Nitrogen and Aluminum-Nitrogen Doped ZnO Films
    Autorzy:
    Ievtushenko, A.
    Khyzhun, O.
    Shtepliuk, I.
    Tkach, V.
    Lazorenko, V.
    Lashkarev, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399119.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    77.55.hf
    68.55.Ln
    Opis:
    Undoped, nitrogen-doped and aluminum-nitrogen co-doped ZnO films were deposited on Si substrates by magnetron sputtering using layer-by-layer method of growth. X-ray photoelectron spectroscopy was employed to characterize electronic properties of undoped and nitrogen doped ZnO films. The effects of N and N-Al incorporation into the ZnO matrix on the X-ray photoelectron spectroscopy core-level and valence-band spectra of the films were studied and discussed.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 858-861
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
    Autorzy:
    Demchenko, I.
    Melikhov, Y.
    Konstantynov, P.
    Ratajczak, R.
    Barcz, A.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030972.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    74.25.Jb
    33.60.+q
    Opis:
    The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 907-909
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and~RF Magnetron Sputtering
    Autorzy:
    Wu, G.
    Chen, Y.
    Lu, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504062.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    82.70.Gg
    77.55.hf
    Opis:
    Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. In this paper, aluminum-doped zinc oxide thin films have been prepared on glass substrates using a sol-gel route and the radio-frequency magnetron sputtering process. The stoichiometry could be easily adjusted by controlling the nanosized precursor concentration and the thickness by dip-coating cycles. On the other hand, the mixed $N_2O//Ar$ plasma gas provided adequate N doping for the RF sputtering process. The results showed the low electrical resistivity of 21.5 Ω cm with the carrier concentration of - 3.21 × $10^{18} cm^{-3}$ for the n-type aluminium-doped zinc oxide film. They were 34.2 Ω cm and + 9.68 × $10^{16} cm^{-3}$ for the p-type aluminium-doped zinc oxide film. The optical transmittance has been as high as 85-90% in the 400-900 nm wavelength range. The aluminium-doped zinc oxide (2 at.% Al) films exhibited the hexagonal wurzite structure with (002) preferred crystal orientation. The electrical characteristics were depicted by the gradual increase in N and NO that occupy the oxygen vacancies.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 149-152
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanocomposite ZnO:MWCNT Thin Films for Li-Ion Batteries Prepared via Reactive Magnetron Sputtering
    Autorzy:
    Guler, M.
    Cetinkaya, T.
    Cevher, O.
    Tocoglu, U.
    Akbulut, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195252.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    82.47.Aa
    61.48.De
    77.55.hf
    Opis:
    In this study, ZnO/MWCNT buckypaper nanocomposite structures were obtained as an anode electrode material for Li-ion batteries. MWCNT based buckypapers were produced via vacuum filtration techniques and the surfaces of the buckypapers were coated with ZnO in order to increase stability and mechanical integrity during charging and discharging processes. The effect of deposition powers on the battery performance is also investigated.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 319-321
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Terahertz Emission from Surfaces of Cu(InGa)Se_2 Layers
    Autorzy:
    Koroliov, A.
    Arlauskas, A.
    Balakauskas, S.
    Šoliūnas, M.
    Maneikis, A.
    Krotkus, A.
    Šetkus, A.
    Tamošiūnas, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399106.pdf
    Data publikacji:
    2013-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.Li
    88.40.jn
    77.55.hf
    Opis:
    In this contribution, we report on investigations of THz emission from $Cu(In,Ga)Se_2$ layers, deposited from a single copper-deficient sputtering target. Emission from $Cu(In,Ga)Se_2$ layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This effect can be attributed to stronger electric field in the heterostructure between p-type $Cu(In,Ga)Se_2$ and n-type ZnO layers.
    Źródło:
    Acta Physica Polonica A; 2013, 124, 5; 846-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Cathodoluminescence Measurements at Liquid Helium Temperature of Poly- and Monocrystalline ZnO Films
    Autorzy:
    Witkowski, B.
    Wachnicki, Ł.
    Jakieła, R.
    Guziewicz, E.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492546.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.60.Hk
    77.55.hf
    68.37.Hk
    61.72.Ff
    Opis:
    Scanning electron microscopy, cathodoluminescence and secondary ion mass spectroscopy investigations are used to study an inter-link between structural quality, elements distribution and light emission properties of ZnO poly- and monocrystalline films grown by the atomic layer deposition. Cathodoluminescence and scanning electron microscopy investigations were performed at liquid helium temperature for four different types of ZnO films deposited on different substrates.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-028-A-030
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Characteristics and Optical Properties of Thermally Oxidized Zinc Films
    Autorzy:
    Rusu, D.
    Rusu, G.
    Luca, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505094.pdf
    Data publikacji:
    2011-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    68.55.-a
    68.55.J-
    81.15.Aa
    78.20.-e
    Opis:
    Zinc oxide (ZnO) thin films (with thickness ranged from 780 nm to 1150 nm) were prepared by thermal oxidation in air (at 600-700 K, for 20-30 min) of vacuum evaporated metallic zinc films. The Zn films were deposited on glass substrates at room temperature. The crystalline structure of ZnO thin film samples was investigated using X-ray diffraction technique. The diffraction patterns revealed that the ZnO thin films were polycrystalline and have a wurtzite (hexagonal) structure. The film crystallites are preferentially oriented with (002) planes parallel to substrate surface. Some important structural parameters (lattice parameters of the hexagonal cell, crystallite size, Zn-O bond length, residual stress, etc.) of the films were determined. The surface morphology of the prepared ZnO thin films, investigated by atomic force microscopy, revealed a uniform columnar structure. The spectral dependence of transmission coefficient has been studied in the wavelength range from 300 nm to 1700 nm. The optical energy band gap calculated from the absorption spectra (supposing allowed direct band-to-band transitions) are in the range 3.17-3.19 eV. The dependence of the microstructural and optical characteristics on the preparation conditions (oxidation temperature, oxidation time, etc.) of the oxidized zinc films is discussed.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 6; 850-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Porous Zn Growth Mechanism during Zn Reactive Sputter Deposition
    Autorzy:
    Borysiewicz, M.
    Wojciechowski, T.
    Dynowska, E.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1198573.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.70.-m
    81.15.Cd
    77.55.hf
    81.10.Pq
    52.27.Cm
    Opis:
    Ar-O-Zn plasma discharges created during DC reactive magnetron sputtering of a Zn target and RF reactive magnetron sputtering of a ceramic ZnO target were investigated and compared by means of the Langmuir probe measurements in order to determine the mechanism of growth of porous Zn films during DC-mode Zn reactive sputtering. The power supplied to the magnetrons during the sputtering was kept at 125 W and the plasma was characterised as a function of oxygen content in the sputtering gas mixture, ranging from 0 to 60% for two gas pressures related to porous Zn film deposition, namely 3 mTorr and 5 mTorr. Based on the correlation of plasma properties measurements with scanning electron microscope imaging and X-ray diffraction of the films deposited under selected conditions it was found that the growth of porous, polycrystalline Zn films was governed by high electron density in the plasma combined with a high electron temperature and an increased energy of the ions impinging on the substrate.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1144-1148
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    RBS/Channeling Analysis of Zinc Oxide Films Grown at Low Temperature by Atomic Layer Deposition
    Autorzy:
    Ratajczak, R.
    Stonert, A.
    Guziewicz, E.
    Gierałtowska, S.
    Krajewski, T.
    Luka, G.
    Wachnicki, L.
    Witkowski, B.
    Godlewski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400467.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    81.05.Dz
    81.15.Hi
    68.55.ag
    82.80.Yc
    61.85.+p
    Opis:
    The results of the Rutherford backscattering/channeling study of ZnO layers are presented. ZnO layers were deposited on the silicon single crystals and GaN epitaxial layers at low temperature by atomic layer deposition. Deposition temperature varied between 100 and 300°C. A random spectra analysis was performed to determine layer thickness and composition. In turn, analysis of the aligned spectra allows us to study evolution of ingrown defects. The Rutherford backscattering study supports the results of X-ray photoelectron spectroscopy measurements, performed separately, that the ZnO-ALD layers deposited at low temperature contain a higher oxygen content. Composition measurements, performed as a function of growth temperature, show that oxygen content decreases with the increasing temperature of the atomic layer deposition growth process.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 899-903
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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