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Tytuł:
Quasistationary Electron States for CdTe/ZnTe/CdTe Open Spherical Quantum Dots
Autorzy:
Stojanović, D.
Kostić, R.
Powiązania:
https://bibliotekanauki.pl/articles/1537875.pdf
Data publikacji:
2010-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
73.22
Opis:
The energy spectra of an electron in open spherical quantum dot (QD) within the effective mass approximation (EMA) and rectangular potential model is presented. Energy structure of quantum dots is important because of their possible applications in electronic and optoelectronic devices. For proper description and interpretation of tunneling processes knowledge of resonant states of quantum dots is necessary. Energy values depend on parameter like size of system and spatial composition. The lifetimes of the quasistationary states are computed within the framework of the scattering S-matrix method. It is shown how core radius and barrier thickness for the CdTe/ZnTe/CdTe example influence electron states and their lifetimes.
Źródło:
Acta Physica Polonica A; 2010, 117, 5; 768-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of retrapping on thermoluminescence peak intensities of small amorphous silicon quantum dots
Autorzy:
Debelo, N.
Dejene, F.
Mal'nev, V.
Senbeta, T.
Mesfin, B.
Roro, K.
Powiązania:
https://bibliotekanauki.pl/articles/1070477.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.63.Kv
Opis:
The effect of retrapping on thermoluminescence intensity peak corresponding to each trap of small amorphous silicon quantum dots in three traps - one recombination center model is investigated. For first order kinetics, where there is no effect of retrapping, the thermoluminescence intensity clearly depends on the level of the trap beneath the edge of the conduction band. This energy difference between the edge of the conduction band and the level of the trap is called trap depth (activation energy). The shallowest trap gives the highest thermoluminescence intensity peak for first order kinetics. However, it was clearly observed that for second order and a case beyond second order kinetics, the thermoluminescence intensity peak corresponding to each trap does not depend on the trap depth. In this case, the retrapping probability coefficients are taken into account and most electrons which are detrapped from the shallow trap(s) will be retrapped to the deeper trap(s) resulting in fewer electrons taking part in the recombination process. This significantly reduces the thermoluminescence intensity peaks of the shallower trap(s). It was observed that the deepest trap, with very high concentration of electrons due to the retrapping phenomenon, gives the highest thermoluminescence intensity. In addition, the variation of concentration of electrons in each trap and the intensity of the thermoluminescence are presented. Though we considered the model of three traps and one recombination center, this phenomenon is true for any multiple traps.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 362-366
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Band and Absorption Coefficient of Quantum Dots in a Well Structure
Autorzy:
Zhang, P.
Lu, X.
Zhang, C.
Yao, J.
Powiązania:
https://bibliotekanauki.pl/articles/1419887.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.63.Kv
Opis:
Building on the effective-mass envelope function theory, this paper focuses on the study of the energy band and the absorption coefficient of $InAs//In_{x}Ga_{1 - x}As$ quantum dots in a well (DWELL) structure. In contrast to $InAs//In_{0.15}Ga_{0.85}As$ quantum DWELL, the $InAs//In_{0.2}Ga_{0.8}As$ quantum DWELL has lower ground states. With the thickness of $In_{0.15}Ga_{0.85}As$ layer changing from 7 nm to 9 nm and $In_{0.2}Ga_{0.8}As$ layer changing from 9 nm to 12 nm, the calculation shows that their absorption coefficient spectra takes a red shift in the long-wave infrared and far-infrared ranges, respectively. Moreover, when the thickness of the $In_{x}Ga_{1 - x}As$ layer is defined as 9 nm, the absorption coefficient spectra of $InAs//In_{0.2}Ga_{0.8}As$ DWELL shows a obvious red shift comparing with that of $InAs//In_{0.15}Ga_{0.85}As$ DWELL.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 197-201
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Level Occupancy Anomalies in a Double QD System
Autorzy:
Stefański, P.
Powiązania:
https://bibliotekanauki.pl/articles/1810305.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
73.23.Hk
Opis:
A double quantum dot system is considered in the presence of the electron intra-Coulomb U interactions within the dots and inter-Coulomb $U_{12}$ interactions between them. We show that both for spinless and spinfull electrons the dots occupancy anomalies are encountered and caused by electron correlations. This non-monotonic behavior strongly deviates from usual level filling at the Coulomb blockade. For spinfull electrons the inter-dot interaction modifies also on-site electron correlations.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 92-94
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon-Assisted Excitation Transfer in Quantum Dot Molecules
Autorzy:
Rozbicki, E.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/2047376.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.Kr
73.63.Kv
Opis:
We derive a quantum-kinetic description of phonon-assisted Förster transfer between two coupled quantum dots (a quantum dot molecule). We show that the exciton state decays to the ground state of the quantum dot molecule via a combination of the Rabi rotation and exponential decay. For moderately spaced dots this process takes place on a picosecond timescale.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 197-202
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The calculation for strain distributions and electronic structure of InAs/GaAs quantum dots based on the eight-band k·p theory
Autorzy:
Shu, Changgan
Liu, Yumin
Powiązania:
https://bibliotekanauki.pl/articles/1070532.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.63.Kv
Opis:
In order to analyze the strain distribution of InAs/GaAs quantum dot in a pyramidal geometry, the traditional calculation method is based on the single band envelope approximation with the modified band edge from the eight band k·p theory. In this paper, we use the eight band k·p Hamiltonian to calculate, and the piezoelectric effects and the electronic structure are also discussed subsequently. To this end, some necessarily derived formulae in calculations about using the finite element calculation software COMSOL are presented in this paper. The results show the details about strain distributions, piezoelectric effects and electronic structure of an InAs/GaAs pyramidal quantum dot, verify the feasibility and efficiency of the calculation method.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 371-377
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Transport through a Quantum Dot Coupled to Non-Collinear Ferromagnetic Electrodes: The Kondo Regime
Autorzy:
Świrkowicz, R.
Wilczyński, M.
Wawrzyniak, M.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813915.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.23.Hk
73.63.Kv
Opis:
Linear and non-linear conductance of quantum dots attached to magnetic leads is considered theoretically in the Kondo regime. The considerations are based on the non-equilibrium Green function formalism and the relevant equation of motion method. Splitting of the Kondo anomaly due to coupling of the dot to ferromagnetic electrodes, and its dependence on magnetic configuration of the system and on the lead's spin polarization is studied numerically.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 565-568
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum States of Self-Assembled InAs Dots Probed by Magneto-Tunneling Spectroscopy
Autorzy:
Patanè, A.
Eaves, L.
Main, P. C.
Levin, A.
Zambrano, M. L.
Henini, M.
Vdovin, E. E.
Dubrovskii, Y. V.
Hill, G.
Powiązania:
https://bibliotekanauki.pl/articles/2027456.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.-b
73.63.Kv
73.43.Jn
Opis:
We present an experimental study of the electron wave function in InAs/GaAs self-assembled quantum dots. Magneto-tunneling spectroscopy is employed as a non-invasive probe to produce two-dimensional images of the probability density of an electron confined in a quantum dot. The images reveal the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states of the dots.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 165-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon-Assisted Tunneling of an Electron in a Strained Self-Assembled Quantum Dot Molecule
Autorzy:
Pochwała, M.
Machnikowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1811973.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.21.La
73.63.Kv
63.20.kd
Opis:
We calculate phonon-assisted relaxation rates in a self-assembled quantum dot molecule. The calculation is based on wave functions obtained within an envelope function approach, including strain effects. The single-phonon relaxation is shown to be efficient for separations between the dots around 10 nm when, in addition, the dots are brought close to resonance.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1285-1291
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Threshold Effects in Three-Terminal Hybrid Systems
Autorzy:
Michałek, G.
Powiązania:
https://bibliotekanauki.pl/articles/1201870.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Kv
73.63.-b
74.45.+c
Opis:
In the paper we study transport in the three terminal hybrid devices with quantum dot. Our attention is focused on the conductance threshold effects (so called Wigner singularities) caused by the back action from the side-wire. In particular we study influence of the direct electron transfer (ET) and crossed Andreev reflection (CAR) processes on the conductance caused by the direct Andreev reflection (DAR) processes.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 224-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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