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Wyświetlanie 1-15 z 17
Tytuł:
High-Pressure Magnetotransport Measurements of Resonant Tunnelling via X-Minimum Related States in AlAs Barrier
Autorzy:
Gryglas, M.
Przybytek, J.
Baj, M.
Eaves, L.
Henini, M.
Powiązania:
https://bibliotekanauki.pl/articles/2028835.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Jn
73.63.Hs
Opis:
In this paper, we present the results of magnetotransport experiments performed on a single barrier GaAs/AlAs/GaAs heterostructures. Tunnel current was measured as a function of magnetic field for different values of bias voltage and hydrostatic pressure. We observed that the amplitude of the magnetooscillations of tunnel current quenched when the requirements for resonant tunnelling were met and it recovered in out-of-resonance conditions. This effect was observed both for tunnelling through donor states and through X-minimum related quasiconfined conduction band states. The fact that also in the latter case the amplitude was restored suggests that this process involved X$\text{}_{z}$ subbands and took place without a participation of phonons (the so-called k$\text{}_{ǁ}$-conserving process).
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 403-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of Electron Mobility and Photoconductivity in Quantum Well $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ οn InP Substrate
Autorzy:
Kulbachinskii, V.
Lunin, R.
Yuzeeva, N.
Galiev, G.
Vasilievskii, I.
Klimov, E.
Powiązania:
https://bibliotekanauki.pl/articles/1399881.pdf
Data publikacji:
2013-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
Isomorphic $In_{0.52}Al_{0.48}As//In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well structure on InP substrate were grown by molecular beam epitaxy. We investigated the electron transport properties and mobility enhancement in the structures by changing of doping level, the width d of quantum well $In_{0.53}Ga_{0.47}As$ or by illumination using light with λ = 668 nm. Persistent photoconductivity was observed in all samples due to spatial separation of carriers. We used the Shubnikov-de Haas effect to analyze subband electron concentration and mobility. The maximal mobility was observed for quantum well width d = 16 nm.
Źródło:
Acta Physica Polonica A; 2013, 123, 2; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers
Autorzy:
Mc Tavish, J.
Ikonić, Z.
Indjin, D.
Harrison, P.
Powiązania:
https://bibliotekanauki.pl/articles/1813212.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.21.Fg
73.63.Hs
Opis:
We report on the results of our simulations of Γ-X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ-X scattering), a double quantum well (to compare the Γ-X-G and Γ-Γ scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 891-902
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Size Effects on the Electrical Resistivity of the Ultra-Thin Metallic Film
Autorzy:
Paja, A.
Działo, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198662.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:
In this article we investigate the electron-phonon interaction in metals in the system strongly reduced in one dimension. The Fermi sphere which represents the free-electron structure of a bulk metal was replaced by a discrete set of the Fermi disks. Using the variational expression for resistivity the temperature and film thickness dependences of the resistivity were derived and compared with experimental data.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1220-1223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity of the Monoatomic Metallic Layer
Autorzy:
Paja, A.
Działo, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400157.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:
We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 770-772
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coherent Terahertz Radiation Generation Assisted by Low-Temperature Optical Phonon Emission: Achievements and Perspectives
Autorzy:
Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:
https://bibliotekanauki.pl/articles/1813188.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Ht
72.30.+q
73.63.Hs
Opis:
The conditions for THz radiation generation caused by electron transite time resonance in momentum and real spaces under low-temperature optical-phonon emission are analyzed. It is shown that such a phenomenon provides a unique possibility to realize the sub-THz and THz radiation generation at the border of the electrooptical and electronic techniques by using both the approaches: (i) amplification of transverse electromagnetic waves in 3D bulk materials and 2D quantum wells, and (ii) longitudinal current instabilities in submicron and overmicron n⁺nn⁺ diodes.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 795-802
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport Phenomena in Two-Dimensional Structures with Quantum Dots
Autorzy:
Požela, J.
Powiązania:
https://bibliotekanauki.pl/articles/2041644.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Hs
73.63.Kv
85.35.Be
85.30.Tv
Opis:
A model that explains the unusual characteristics of the AlGaAs/GaAs modulation-doped field-effect transistor (MODFET) with InAs quantum dots incorporated in the GaAs channel is presented. It is shown that the negative charge of electrons confined in quantum dots decreases the threshold gate-drain voltage at which the channel is fully depleted. This provides an impact ionization of quantum dots at a low drain voltage. Because of the quantum dot ionization, the quantum dot MODFET transconductance becomes large and negative. The increased transconductance, due to the additional doping of the GaAs and InAs channels by impurities, exceeds 10$\text{}^{3}$ mS/mm. It is shown that the insertion of InAs quantum well with quantum dots into the GaAs quantum well increases the electron maximum drift velocity up to 10$\text{}^{8}$ cm/s, and consequently, quantum dot MODFET current gain cut-off frequency up to few hundred gigahertz.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 118-127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Canals for the Photon-Assisted Transport of Electron through the Double-Barrier Resonant Tunneling Structure
Autorzy:
Tkach, M.
Seti, Ju.
Voitsekhivska, O.
Powiązania:
https://bibliotekanauki.pl/articles/1399516.pdf
Data publikacji:
2013-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
73.63.Hs
68.65.Fg
Opis:
The resonance and non-resonance transmission canals of double-barrier resonant tunneling structure are established for the electron-photon system using the exact solution of one-dimensional non-stationary Schrödinger equation expanded into the Fourier range. It is shown that besides the main and satellite, the mixed quasi-stationary states which cause the appearance of specific transmission canals with the properties strongly dependent on the intensity and frequency of electromagnetic field, exist in the nanostructure.
Źródło:
Acta Physica Polonica A; 2013, 124, 1; 94-101
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of the Non-Square InGaAsP/InP Quantum Wells in the Electric Field by Photoreflectance
Autorzy:
Kudrawiec, R.
Sęk, G.
Rudno-Rudziński, W.
Misiewicz, J.
Wojcik, J.
Robinson, B. J.
Thompson, D. A.
Mascher, P.
Powiązania:
https://bibliotekanauki.pl/articles/2035600.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Hs
78.67.-n
66.10.Cb
Opis:
Non-square quantum wells in electric field have been investigated by photoreflectance and photoluminescence spectroscopies. The structures have been obtained by a post-growth modification (rapid thermal annealing) of standard 1.55μm InGaAsP-based laser structures that were grown by gas source molecular beam epitaxy. During rapid thermal annealing a migration of semiconductor atoms across quantum well interfaces changes the quantum well profile from a square well to a rounded well. The modification of the profile changes energy levels in the quantum well and in consequence a blue shift of the quantum well emission peak is observed in photoluminescence. In this paper the blue shift of the ground state transition of post-growth modified quantum well structures has been investigated by both photoluminescence and photoreflectance techniques. Also a blue shift of excited state transitions has been observed in photoreflectance spectra. Generally, a stronger blue shift for the ground state transition than for excited state transitions has been observed. Additionally, oscillator strengths for all quantum well transitions have been determined from photoreflectance spectra. It has been found that the oscillator strength is constant for all quantum well transitions despite of modification of the quantum well profile.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 649-657
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Numerical Simulation of Current Dependence on Well Widths in AlGaAs/GaAs/AlGaAs Double Barrier Diode Structures
Autorzy:
Rezvani, A. H.
Powiązania:
https://bibliotekanauki.pl/articles/2035656.pdf
Data publikacji:
2003-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Hs
71.15.Mb
71.10.Ca
Opis:
A numerical procedure based on the time-dependent Kohn-Sham equation with an improved boundary condition for the modeling double barrier resonant tunneling diode is presented. The dependence of current components on well widths in AlGaAs/GaAs/AlGaAs structure is studied. An oscillatory behavior was observed as the width of the well is changed. Our evaluation shows that this oscillation cannot attribute to the well-known oscillation at resonance state.
Źródło:
Acta Physica Polonica A; 2003, 103, 1; 47-56
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Responses in Asymmetric Inverse Parabolic Quantum Wells: Effects of Laser Fields and Hydrostatic Pressure
Autorzy:
Mora-Ramos, M.
Morales, A.
Duque, C.
Powiązania:
https://bibliotekanauki.pl/articles/1207558.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.-k
73.63.Hs
73.21.-b
74.25.Gz
Opis:
We report the theoretical calculation of the electronic states in a $Al_{x}Ga_{1-x}As$-based quantum well with inverse parabolic confinement under the combined effects of the intense laser field and hydrostatic pressure. Calculations are in the effective mass and parabolic band approximations and using a variational procedure and the so-called Floquet method in order to obtain the energies and wave functions for the conduction band states. We use the obtained information to investigate the intersubband-related nonlinear optical absorption and optical rectification coefficients.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 202-204
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Low Temperature Processing of Nanostructures Based on II-VI Semiconductors Quantum Wells
Autorzy:
Majewicz, M.
Śnieżek, D.
Wojciechowski, T.
Baran, E.
Nowicki, P.
Wojtowicz, T.
Wróbel, J.
Powiązania:
https://bibliotekanauki.pl/articles/1376129.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
73.63.Hs
68.37.Hk
62.23.St
Opis:
We report the first results of electron beam lithography processes performed on polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ) resists, which have been pre-backed in vacuum at T ≤ 90°C. For such low temperature processing the lithographical resolution is reduced as compared to standard procedures, however, the exposure contrast and adhesion to CdTe and HgTe substrates have been sufficient for the fabrication of sub-μ m quantum devices. Furthermore, the new method of electrical microcontact forming is proposed, based on the local melting and annealing of an indium metal layer, performed with the application of accelerated electron beam. The method has been tested for CdTe/CdMgTe quantum wells using the lithography techniques, the exposure parameters have been optimized by inspecting the morphology of annealed metal film via the in situ imaging.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1174-1176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Orbit Coupling in n-Type PbTe/PbEuTe Quantum Wells
Autorzy:
Peres, M. L.
Chitta, V. A.
Maude, D. K.
Oliveira, N. F.
Rappl, P. H. O.
Ueta, A. Y.
Abramof, E.
Powiązania:
https://bibliotekanauki.pl/articles/2047927.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.10.-d
72.25.Rb
73.20.Fz
73.63.Hs
Opis:
Magnetoresistance measurements were performed on an n-type PbTe/PbEuTe quantum well and weak antilocalization effects were observed. This indicates the presence of spin-orbit coupling phenomena and we showed that the Rashba effect is the main mechanism responsible for this spin-orbit coupling. Using the model developed by Iordanskii et al., we fitted the experimental curves and obtained the inelastic and spin-orbit scattering times. Thus we could compare the zero field energy spin-splitting predicted by the Rashba theory with the energy spin-splitting obtained from the analysis of the experimental curves. The final result confirms the theoretical prediction of strong Rashba effect on IV-VI based quantum wells.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 602-605
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Limitations in the Tunability of the Spin Resonance of 2D Electrons in Si by an Electric Current
Autorzy:
Wilamowski, Z.
Malissa, H.
Glazov, M.
Jantsch, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047703.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
73.63.Hs
75.75.+a
76.30.-v
Opis:
We analyse the recently observed effect of an in-plane electric current through a Si quantum well on the conduction electron spin resonance. We find that the ratio of resonance shift and current density is independent of temperature and dissipation processes, but the channel current is reduced due to a parallel electric channel in heavily modulation doped samples. The inhomogeneous current distribution results in some broadening of the ESR line width. In high mobility Si/SiGe layers the current induced increase in the electron temperature is considerably larger than the increase in the lattice temperature. The signal amplitude scales with the square of electron mobility.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 375-379
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin Resonance Absorption in a 2D Electron Gas
Autorzy:
Ungier, W.
Jantsch, W.
Wilamowski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2047694.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.75.-d
73.63.Hs
75.75.+a
76.30.-v
Opis:
We analyze the power absorption at electron spin resonance excited by the Bychkov-Rashba spin-orbit field in a 2D electron gas. We show that, as long as the absorbed power is dissipated by the usual spin lattice relaxation mechanisms, the resonance line shape is expected to be of pure absorption type, i.e., it can be described by the imaginary part of the dynamic magnetic susceptibility. Therefore, the Dysonian line shape observed in ESR of 2D electron gas cannot result from this type of the resonance signal.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 345-350
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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