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Wyświetlanie 1-15 z 29
Tytuł:
Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films
Autorzy:
Isik, M.
Gullu, H.
Powiązania:
https://bibliotekanauki.pl/articles/1029832.pdf
Data publikacji:
2018-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
73.61.Jc
Opis:
Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400° to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 × 10^{-8} Ω^{-1} cm^{-1} for as-grown films and increased to 3.6 × 10^{-4} Ω^{-1} cm^{-1} for annealed films at 400°. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400°, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm^{2}.
Źródło:
Acta Physica Polonica A; 2018, 133, 5; 1119-1124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
Autorzy:
Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J.
Powiązania:
https://bibliotekanauki.pl/articles/1397018.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y
Opis:
We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD
Autorzy:
Banaszak-Piechowska, A.
Paprocki, K.
Fabisiak, K.
Dudkowiak, A.
Szybowicz, M.
Staryga, E.
Powiązania:
https://bibliotekanauki.pl/articles/1032579.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
81.05.ug
73.50.Gr
73.61.-r
Opis:
The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ₃₀₀), current-voltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ₃₀₀ and I-V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ₃₀₀ ≈0.1-1 μS/cm. The I-V characteristics in these layers show space charge limited conduction behavior with I ~ V² in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1411-1414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impact of annealing on the relaxation processes in Pt/SrTiO₃/Pt thin film capacitors
Autorzy:
Ouajji, H.
Raouadi, K.
Yangui, B.
Guillan, J.
Powiązania:
https://bibliotekanauki.pl/articles/1157994.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.32.Tt
84.37.+q
81.15.Cd
73.61.-r
77.22.Gm
76.60.Es
Opis:
In this paper, the effect of the post-annealing on the dielectric properties of SrTiO₃ thin films (200 nm) grown by ion beam sputtering has been investigated. The measured dielectric constant dramatically increased after the post-annealing which is a consequence of the formation of the perovskite phase. A low frequency relaxation mechanism is clearly identified in the amorphous state of this material. Once crystallized, a second relaxation mechanism of lower amplitude is detected at high frequencies and for high measuring temperature. It is assumed that this second relaxation process is related to the space charges bound at the grain boundaries, whereas the first one was assigned to the thermally activated motions of the ionized oxygen vacancies and interfacial polarization under alternating field.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 791-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Ammonia Carbon-Based Sensors
Autorzy:
Kościński, M.
Seredych, M.
Bandosz, T.
Śliwińska-Bartkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402567.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
A sensor response parameters of the ammonia sensors which are prepared by using composite of graphene oxide and poly(4-styrenesulfonic acid-co-maleic acid) sodium salt derived carbon are presented. Using the self-designed interdigitated electrode on the experimental setup, we were able to determine the capacity for gas sensing as a sensor response for low ammonia concentrations (20, 50, and 100 ppm).
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 182-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Enhancement of the Critical Temperature Induced by the Quantum Size Effect in Superconducting Nanofilms
Autorzy:
Wójcik, P.
Powiązania:
https://bibliotekanauki.pl/articles/1374149.pdf
Data publikacji:
2014-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.78.-w
73.61.-r
74.78.Na
Opis:
The interplay between the quantum size effect and superconductivity in the metallic Al nanofilms has been studied with the use of the self-consistent numerical solutions of the Bogoliubov-de Gennes equations. We have shown that the critical temperature of the metallic nanofilm oscillates as a function of the nanofilm thickness. This phenomenon results from the quasi-particle energy quantization induced by the confinement of electrons in the direction perpendicular to the film. For the ultrathin nanofilms with thickness 1-2 nm we have found that the critical temperature increases up to value several times higher as compared to the one measured in the bulk.
Źródło:
Acta Physica Polonica A; 2014, 126, 4a; A-130-A-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Kelvin Force Microscopy Characterization of Corona Charged Dielectric Surfaces
Autorzy:
Marinskiy, D.
Edelman, P.
Snider, A.
Powiązania:
https://bibliotekanauki.pl/articles/1363397.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.-g
73.61.-r
68.37.Ps
73.25.+i
Opis:
Ionic diffusion of $(H_2O)_{n}^{+}$ and $CO¯_3$ on $SiO_2$ surfaces has been quantified using Kelvin force microscopy measurement of ion distribution change after small spot corona charge. For both positive and negative ionic species, the concentration profiles versus time follow the two-dimensional surface diffusion enabling a determination of corresponding diffusion coefficients. On a thermally grown $SiO_2$ surface, diffusion coefficients of $(H_2O)_{n}^{+}$ and $CO¯_3$ ions were 2.2 × $10^{-11} cm^2$/s and 4.8 × $10^{-12} cm^2$/s, respectively. On a chemically cleaned $SiO_2$ surface, diffusion coefficients of $(H_2O)_{n}^{+}$ and $CO¯_3$ ions were 7.5 × $10^{-9} cm^2$/s and 2.4 × $10^{-9} cm^2$/s, respectively. Mathematical analysis of the surface potential decay yields an additional parameter - capacitance equivalent thickness.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 997-1002
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon Contribution in Thermodynamics and Transport Properties of Ultrathin Ceramic Films
Autorzy:
Jaćimovski, S.
Šetrajčić, J.
Jaćimovski, M.
Stojanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/1205327.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
74.25.fc
66.30.Xj
65.40.-b
Opis:
The dispersion law, density states of phonons, thermodynamics properties and thermal conductivity was analyzed in this paper. It has been shown that at low temperatures, thermal conductivity of thin film is considerably lower that of bulk-structure. It turned out that phonons in thin film require activation energy for exciting. This leads to extremely low specific heat and specific conductivity at low temperatures. Consequences of quoted facts were discussed in detail and their influence on kinetic and thermodynamic properties of thin films is estimated.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 811-819
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Preparation and Characterization of Aligned Iron Oxide Carbon Nanotube Thin Film
Autorzy:
Hekmatara, H.
Seifi, M.
Rozati, S.
Powiązania:
https://bibliotekanauki.pl/articles/1206613.pdf
Data publikacji:
2014-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.63.Fg
73.61.-r
Opis:
Thin films of acid-functionalized multiwall carbon nanotubes (O-MWCNT) with different concentrations and coated O-MWCNT with $Fe_3O_4$ nanoparticles (MWCNT/$Fe_3O_4$) were prepared on glass substrate at 300C by spray pyrolysis technique. In order to study the effect of nanotubes alignment on the physical properties of carbon nanotube films, thin film of iron oxide nanoparticles coated carbon nanotubes was deposited under magnetic field of 0.4 T. All samples were characterized using UV-Vis spectroscopy, X-ray diffraction, scanning electron microscopy, and the Hall effect experiment. Results show that the electrical conductivity and optical transmittance of carbon nanotubes thin films depend on the concentration of carbon nanotubes and their arrangement at the films. Aligning carbon nanotubes in thin films leads to an obvious improvement in electrical and optical properties of thin films.
Źródło:
Acta Physica Polonica A; 2014, 125, 1; 77-81
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Reversal in Cobalt Nanocolumn Structures Obtained by Glancing Angle Deposition
Autorzy:
Buchta, K.
Schmidt, Ch.
Trykowski, G.
Biniak, S.
Kempiński, M.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1428548.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
An advanced deposition technique known as glancing angle deposition was used to fabricate randomly seeded magnetic cobalt columnar nanostructures. The existence of nanocolumns was confirmed by the cross-section scanning electron microscopy. The evolution in the magnetization reversal mechanism as a function of the film thickness was investigated. The coercivity $H_{C}$ and $M_{R}//M_{S}$ ratio (where $M_{R}$ and $M_{S}$ denote the remanent and saturation magnetization, respectively), derived from the magnetic hysteresis loops, are discussed as a function of the angle between the external magnetic field and the surface normal. The direction of the magnetization easy/hard axis and the columns inclination angle were determined on the basis of the angular dependences of the $H_{C}$ and the $M_{R}//M_{S}$. A crossover from the coherent rotation, based on the Stoner-Wohlfarth model, to the curling reversal mode was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1222-1224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Metal-Semiconductor Transition on the Surface and in the Bulk of Europium Hydride Thin Film
Autorzy:
Knor, M.
Nowakowski, R.
Duś, R.
Powiązania:
https://bibliotekanauki.pl/articles/1418265.pdf
Data publikacji:
2012-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
67.63.Gh
73.61.-r
78.66.-w
73.20.-r
Opis:
Thin europium films (20-50 nm thick) on a glass substrate were transformed into $EuH_x$ (0 < x < 2) by interaction with H_2 introduced into the reactor in successive calibrated doses. By measuring the pressure, the hydrogen uptake (H/Eu) was determined at every step of the reaction. In situ monitoring of bulk properties (electrical resistance R(H/Eu), relative transparency to light T(H/Eu)/$T_0$ and (H/Eu) dependent light transparency spectrum) confirms metal-semiconductor transition at room temperature. Both the electrical resistance and optical transparency of the film strongly increase with hydrogen concentration as a consequence of the resulting increase of the content of semiconducting dihydride. Moreover, the course of work function changes ΔΦ(H/Eu) indicates inversion of the charge-transfer direction on the surface. The transition at room temperature from positively to negatively polarized hydrogen adsorbate was observed in situ during hydrogen uptake. As a result, the work function at equilibrium state varies with hydrogen content from +18 to -18 mV with respect to pure metal film, reflecting the change of "mirror potential" generated on the surface due to the accumulation of hydrogen adsorbates in the subsurface region.
Źródło:
Acta Physica Polonica A; 2012, 122, 4; 698-703
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Toward Finding a Commercial Method for Deposition of Nanostructured $SnO_2$ Thin Films
Autorzy:
Memarian, N.
Rozati, S.
Powiązania:
https://bibliotekanauki.pl/articles/1419889.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.61.-r
73.61.Ey
Opis:
Nanostructured tin oxide $(SnO_2)$ thin films have been prepared by spray pyrolysis technique. The effects of deposition conditions such as substrate temperature and tin chloride concentration in the precursor solution on physical properties of films have been investigated. The physical characterization of samples was carried out by UV-VIS spectroscopy, X-ray diffraction, scanning electron microscopy, and the Hall effect experiment for optical, structural, morphological and electrical studies, respectively. The films are polycrystalline in nature with a tetragonal crystal structure. The preferred orientation has been changed by changing the deposition parameters. In the case of changing the substrate temperature, (211) was found as the preferred orientation, while by changing the molarities of the solution, (301) orientation was grown as well as (211). The deposition temperature was optimized to 450°C; whereas the optimum solution concentration was found to be 0.2 mol/L. Films deposited at foregoing conditions have good optoelectrical properties which make them suitable for applying in different optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 202-206
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoconductivity Study of Sputter-Deposited $Cu_2O$ Films
Autorzy:
Bhattacharyya, S.
Reppin, D.
Sanguino, P.
Ayouchi, R.
Polity, A.
Schwarz, R.
Hofmann, D.
Meyer, B.
Powiązania:
https://bibliotekanauki.pl/articles/1492344.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
73.50.-h
73.61.-r
Opis:
Cuprous oxide $(Cu_2O)$ thin films were deposited by radio frequency sputtering technique on fused silica substrates. The X-ray diffraction study of the $Cu_2O$ samples showed reflections from (111) and (200) planes of cubic $Cu_2O$. The samples were then annealed at 1008 K in nitrogen $(N_2)$ atmosphere. Annealed samples indicated strain relaxation. The samples were then characterized optically by measuring the transmittance using an ultraviolet-visible-near infrared photospectrometer. The band gap of the as-deposited samples were found to be ≈ 2.1 eV, whereas the annealed samples had a band gap of ≈ 2.6 eV. The transient photocurrent decay measurements of the annealed films indicated slow non-exponential power law decays in several time windows, indicating multiple trapping of the carriers in the deep defects within the band gap. The steady-state photo and dark current measurement and persistent photocurrent (PPC) was carried out on the annealed samples. In general, the photocurrent was found to be much smaller than the dark current. The steady-state and transient photocurrent measurements were utilized to determine the carrier lifetime-mobility product, 〈μτ 〉 of the samples and to determine the carrier mobility, 〈μ 〉.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-011-A-014
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of~Rf Plasma Nitrided Silicon Thin Films at Different Rf Plasma Processing Powers
Autorzy:
Mohamed, S.
Raaif, M.
Abd El-Rahman, A.
Shaaban, E.
Powiązania:
https://bibliotekanauki.pl/articles/1493713.pdf
Data publikacji:
2011-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Dj
61.05.cp
73.61.-r
78.66.-w
Opis:
Nitrided surfaces and composition gradients in thin films exhibit interesting mechanical, electrical and optical properties. Therefore, silicon (Si) thin films were prepared by electron beam evaporation and nitrided by an inductively coupled rf plasma. The effects of successive plasma processing power on structural and optical properties as well as electrical resistivity were examined by different characterization techniques. The Si thin films were transformed gradually into nitrides compound thin films and the amount of nitrogen in the film increased with increasing the rf processing power. The Si nitrided films showed structural, optical and electrical properties that depend on the nitriding power. Increasing the rf plasma processing power caused amorphization, reduced the thickness, increased transmittance, increased resistivity and decreased the reflectance of the Si films. The electrical resistivity increased about eight orders of magnitude when the sample nitrided at 500 W. Different optical band gap were determined indicating the presence of different competing phases in the same film. The decrease in refractive index with plasma treatment power is attributed to the possible change in the bucking density as well as to the increase in the band gap.
Źródło:
Acta Physica Polonica A; 2011, 120, 3; 552-557
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
Autorzy:
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A.
Powiązania:
https://bibliotekanauki.pl/articles/2047930.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk
Opis:
Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 29

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