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Wyświetlanie 1-15 z 20
Tytuł:
Double Injection Current Transients in a-Si:H
Autorzy:
Nekrašas, N.
Genevičius, K.
Juška, G.
Powiązania:
https://bibliotekanauki.pl/articles/1813197.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Gr
Opis:
In this work we present results of both computer modelling and experimental studies of double injection current transients in amorphous hydrogenated silicon thin layers.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 845-849
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hot Electron Ballistic Transport in Two Dimensional Structures
Autorzy:
Palevski, A.
Sivan, U.
Heiblum, M.
Umbach, C. P.
Strickman, H.
Powiązania:
https://bibliotekanauki.pl/articles/1877494.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Fq
73.50.Gr
Opis:
Quasi ballistic transport in a 2 dimension electron gas was explored and tunneling through an electrostatic barrier induced by metallic gates on the top of the heterostructure was demonstrated. For energies above 36 meV we observed the LO phonon emission, leading to a short mean free path. At energies below the phonon energy we find a mean free path of the order of 2 µm, about an order of magnitude longer than expected theoretically for electron interactions. The angular distribution of hot electrons injected from a point source was shown to be collimated and could be steered by controling the electrostatic profile of the injector. In addition we demonstrated operation of electrostatic lens which opens a new branch in semiconductor physics, namely, electron-optics in solids.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 59-69
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Field Influence on Auger Effect on Shallow Donors in CdF$\text{}_{2}$:Mn$\text{}^{2+}$ Luminescence
Autorzy:
Kamińska, A.
Suchocki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1968121.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Hb
73.50.Gr
Opis:
Direct observation of the suppression of the Auger effect on shallow donors by the magnetic field in the luminescence of manganese ions in semiconducting CdF$\text{}_{2}$:Mn crystals is presented. The magnetic field decreases the probability of the Auger effect, which is spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors. This results in the increase in the decay times of the luminescence.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 815-818
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier Collection into InGaAs/GaAs Quantum Well: Role of Surface Band Bending
Autorzy:
Ambrazevičius, G.
Marcinkevičius, S.
Lideikis, T.
Naudžius, K.
Powiązania:
https://bibliotekanauki.pl/articles/1921571.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.50.Gr
Opis:
Photoluminescence and photoluminescence excitation spectra of InGaAs/GaAs quantum wells located at different distances from a surface have been studied at 2 K. The influence of surface band bending on carrier transfer into a quantum well is demonstrated. Oscillations due to relaxation of photo-excited carriers in GaAs barrier have been observed in the quantum well photoluminescence excitation spectra.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 660-663
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroresistance of Electrically Nonhomogeneous La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO Thin Films
Autorzy:
Kiprijanovič, O.
Lučun, A.
Ašmontas, S.
Anisimovas, F.
Butkutė, R.
Maneikis, A.
Sužiedėlis, A.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/2047239.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Gr
73.50.Lw
73.63.Bd
Opis:
Current and electrical field-induced electroresistive effects were investigated for La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$/MgO thin films demonstrating nanosized electrical inhomogeneities. Two different models based on enhanced conductivity of intergrain boundaries by injecting spin-polarized carriers from ferromagnetic grains and electrical field-enhanced hopping of carriers in high resistance intergrain media were carried out to explain nonlinear electrical properties of the films.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 141-146
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Peculiarities of Space-Charge-Limited Photocurrent
Autorzy:
Viliiūnas, M.
Juška, G.
Arlauskas, K.
Baltušis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1968442.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Fq
73.50.Gr
73.61.Jc
Opis:
We demonstrate new advantages of the space-charge-limited photocurrent technique for the investigations of charge carrier recombination. Bimolecular recombination coefficient in a-Si:H estimated according to suggested method for both electrons and holes is presented.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 1043-1047
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electroresistance of La-Ca-MnO Thin Films
Autorzy:
Cimmperman, P.
Stankevič, V.
Žurauskienė, N.
Balevičius, S.
Anisimovas, F.
Paršeliūnas, J.
Kiprijanovič, O.
Altgilbers, L.
Powiązania:
https://bibliotekanauki.pl/articles/2037104.pdf
Data publikacji:
2004
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Gr
73.50.Lw
73.63.Bd
Opis:
Epitaxial, textured, and polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$Mn O$\text{}_{3}$ films, having about 150 nm thickness, were prepared by pulsed laser deposition techniques onto (110) NdGaO$\text{}_{3}$, MgO and lucalox substrates and investigated using 10 ns duration, 0.5 ns rise time electrical pulses having amplitude up to 500 V. Electroresistance of the films [R(E)-R(0)]/R(0) was investigated up to 80 kV/cm electric field strengths in temperatures ranging from 300 K to 4.2 K. Strong (up to 93%) negative electroresistance was obtained in polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films prepared on MgO and lucalox substrates. The epitaxial films grown on NdGaO$\text{}_{3}$ substrate demonstrated only a small resistance change due to Joule heating induced by a current pulse. It was concluded that electroresistance manifests itself in strongly inhomogeneous manganites films exhibiting a large number of structural imperfections producing ferromagnetic tunnel junction nets.
Źródło:
Acta Physica Polonica A; 2004, 105, 1-2; 107-114
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Non-Homogeneous MDMO-PPV Polymer
Autorzy:
Kažukauskas, V.
Pranaitis, M.
Janonis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505467.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Hb
73.50.Gr
73.50.Pz
73.61.Ph
Opis:
By thermally stimulated currents we have investigated carrier transport and trapping in [poly-(2-methoxyl, 5-(3,77dimethyloctyloxy)] paraphenylenevinylene (MDMO-PPV). To assure selective excitation of the defect states the spectral width of the exciting light was varied from 1.77 eV up to 3.1 eV. The thermally stimulated current curves were shown to be a superposition of carrier generation from trapping states and thermally stimulated mobility growth. The extrinsic excitation resulted in 0.16 eV photoconductivity effective activation energy values, which decreased down to 0.05 eV for the intrinsic excitation. The deeper states with activation energies of 0.28-0.3 eV and 0.8-0.85 eV were identified, too. The results are direct indication of distributed in energy trapping and transport states with the standard deviation of the density of states of about 0.015 eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 128-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound
Autorzy:
Dussan, A.
Mesa, F.
Powiązania:
https://bibliotekanauki.pl/articles/1207470.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.50.-h
73.61.Ga
73.50.Gr
Opis:
In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, $Cu_3BiS_3$, SnS, $Cu_2ZnSnSe_4$, and $CuInGaSe_2$ thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level $(N_{F})$, as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 171-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon
Autorzy:
Nekrašas, N.
Sliaužys, G.
Juška, G.
Arlauskas, K.
Stuchlik, J.
Kočka, J.
Powiązania:
https://bibliotekanauki.pl/articles/2041793.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Gr
72.20.Jv
84.60.Jt
Opis:
In the multilayers of hydrogenated nanocrystalline and amorphous silicon bimolecular recombination coefficient can be reduced in half, while in low-temperature hydrogenated nanocrystalline silicon samples it can be reduced by one order of magnitude. The similarity of the activation energies of both the bimolecular recombination (B) and the Langevin-type recombination (B$\text{}_{L}$) coefficients point to decisive role of tunneling in processes of meeting of electrons and holes, although the ratio B/B$\text{}_{L}$<0.01.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 373-376
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Traps in Ce-Doped CaF$\text{}_{2}$ and BaF$\text{}_{2}$
Autorzy:
Drozdowski, W.
Przegiętka, K. R.
Wojtowicz, A. J.
Oczkowski, H. L.
Powiązania:
https://bibliotekanauki.pl/articles/1994795.pdf
Data publikacji:
1999-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Kn
73.50.Gr
29.40.Mc
Opis:
Thermoluminescence of CaF$\text{}_{2}$:Ce, BaF$\text{}_{2}$, and BaF$\text{}_{2}$:Ce irradiated at room temperature is reported. X-ray induced emission spectra of the samples show that both excitonic (due to e$\text{}^{-}$+V$\text{}_{K}$ recombination) and Ce$\text{}^{3+}$ d-f luminescence may contribute to thermoluminescence signal. The simple Randall-Wilkins model is used to deconvolute glow curves into seven to eight first-order peaks. Parameters of all traps are calculated and correlations between peaks in the curves of the examined materials are discussed.
Źródło:
Acta Physica Polonica A; 1999, 95, 2; 251-258
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Analysis of Pentacene Diode
Autorzy:
Stuchlíková, L.
Weis, M.
Juhász, P.
Kósa, A.
Harmatha, L.
Jakabovic, J.
Powiązania:
https://bibliotekanauki.pl/articles/1364022.pdf
Data publikacji:
2014-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Le
73.50.Gr
71.55.-i
Opis:
This paper demonstrates the analysis of defect states in pentacene film sandwiched between Au and Al electrodes by the deep-level transient spectroscopy method. Three hole-like deep energy levels were observed. The effective mass obtained from the simulation is applied and defect parameters, namely the capture cross-sections and the activation energy 3.7 × $10^{-18} cm^2$ at 0.34 eV, 3.1 × $10^{-17} cm^2$ at 0.41 eV, and 2.9 × $10^{-15} cm^2$ at 0.63 eV is determined from the Arrhenius plot. Reliability of obtained defect parameters is confirmed by simulation of deep level transient spectra and comparison with experiment.
Źródło:
Acta Physica Polonica A; 2014, 125, 4; 1038-1041
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoelectromagnetic Investigations of Graphene
Autorzy:
Nowak, M.
Solecka, B.
Jesionek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1376055.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Vp
73.50.Gr
73.50.Pz
78.67.Wj
Opis:
The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1104-1106
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Characterization of Undoped Diamond Layer Grown by HF CVD
Autorzy:
Banaszak-Piechowska, A.
Paprocki, K.
Fabisiak, K.
Dudkowiak, A.
Szybowicz, M.
Staryga, E.
Powiązania:
https://bibliotekanauki.pl/articles/1032579.pdf
Data publikacji:
2017-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
81.05.ug
73.50.Gr
73.61.-r
Opis:
The undoped diamond layers were prepared using hot filament chemical vapor deposition technique. The controlled variation of the deposition parameters resulted in the layers with varying amount of nondiamond impurities. Routine characterization of the layers was carried out using scanning electron microscopy, X-ray diffractometry, and the Raman spectroscopy. Detailed measurements of room temperature electrical conductivity (σ₃₀₀), current-voltage characteristics have yielded useful information about the electrical conduction mechanism in this interesting material. The σ₃₀₀ and I-V characteristic measurements were done in sandwiched configuration taking care off the surface effects. The diamond shows room temperature dc conductivity reaching the values in the range of σ₃₀₀ ≈0.1-1 μS/cm. The I-V characteristics in these layers show space charge limited conduction behavior with I ~ V² in high voltage region. The obtained results are explained in terms of chemically adsorbed hydrogen on the surface of diamond layers, which is a source of acceptor states just above the top of valence band.
Źródło:
Acta Physica Polonica A; 2017, 132, 4; 1411-1414
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characteristics of Optical and Photoconductive Properties in Bulk and Thin Film of TlS$\text{}_{2}$ Single Crystals
Autorzy:
Badr, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/2047362.pdf
Data publikacji:
2007-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.Cc
73.50.Gr
73.50.Pz
78.20.-e
78.20.Ci
Opis:
The photoconductivity measurements were carried out for bulk single crystals of TlS$\text{}_{2}$ by using the steady state (dc) method in order to elucidate the nature of the dc photoconductivity in these crystals. The photoconductivity measurements were carried out in the temperature range of 77-300 K, excitation intensity range of 2150-5050 lx, applied voltage range of 10-25 V, and wavelength range of 400-915 nm. As a result of the dc photoconductivity, the temperature dependence of the energy gap width was described and the temperature coefficient of the band gap was determined. Reflectance and transmittance spectra of the TlS$\text{}_{2}$ thin films were measured in the incident photon energy range of 2.1-2.45 eV and in the temperature range of 77-300 K. With the aid of these spectra, the temperature dependence of optical transports and parameters were elucidated. In the low energy region of the studied incident photon energy range, the above-mentioned spectra were analyzed for describing the refractive index as a function of wavelength. As results of the refractive index-wavelength variations, both the oscillator and dispersion energies of the refractive index were thereafter estimated.
Źródło:
Acta Physica Polonica A; 2007, 112, 1; 77-91
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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