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Wyszukujesz frazę "73.50.-h" wg kryterium: Temat


Wyświetlanie 1-35 z 35
Tytuł:
Study of Gas Permeation Through Thin ta-C:H Films
Autorzy:
Lackner, J.
Waldhauser, W.
Kahn, M.
Powiązania:
https://bibliotekanauki.pl/articles/1401332.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
Opis:
Protective ultra-thin barrier films gather increasing economic interest for controlling permeation and diffusion from the biological surrounding in implanted sensor and electronic devices in future medicine. Thus, the aim of this work was the investigation of the film thickness influence on the gas permeation barrier of ultra-thin, cytocompatible tetrahedral amorphous carbon (ta-C:H) films on polyimide (PI) foils. Plasma-activated chemical vapor deposition (direct deposition from an ion source) was applied to deposit these diamond-like carbon films. The results indicate high barrier to hydrogen gas permeation by all film thicknesses (<0.2% H₂ permeation compared to uncoated PI). While the thickness of the ta-C:H layers has minor influence, the number of layers, realized by one- or double-side deposition strongly impacts the barrier effect. Finally, tests under tensile stresses showed minor impact in the elasto-plastic deformation regime, but the expected strong increase of gas permeation after exceeding the tensile strength and film fracture.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1236-1239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Impurity-Scattering Limited Electron Mobility in Free Standing Quantum Wires: Image Charge Effect
Autorzy:
Vagner, P.
Mos̆ko, M.
Powiązania:
https://bibliotekanauki.pl/articles/1952718.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
Opis:
We calculate the impurity-scattering limited mobility of the one-dimensional electron gas in a rectangular GaAs quantum wire confined in the vertical (growth) direction by n-modulation doped AlGaAs layers and free standing along the transverse direction. The scattering potential of the ionized impurity is obtained by solving the Poisson equation with z-dependent electrostatic permittivity in order to take into account the image charge effect due to the abrupt permittivity change at the GaAs/air interfaces. We show that the "image impurity" scattering tends to drastically reduce the electron mobility for sufficiently small (≈10 nm) transverse wire widths.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1103-1107
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantum Transport in Thin-Film Structures
Autorzy:
Bułka, B.
Barnaś, J.
Powiązania:
https://bibliotekanauki.pl/articles/1930612.pdf
Data publikacji:
1994-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.At
Opis:
General quantum-mechanical description of electronic transport in thin-film structures, which is based on the Kubo approach, is presented and applied to a single film with ideal surfaces. The cases of a constant chemical potential and a constant particle number are considered and analysed numerically.
Źródło:
Acta Physica Polonica A; 1994, 85, 2; 465-468
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interface Mixing in Fe/Si Multilayers Observed by the In Situ Conductance Measurements
Autorzy:
Chomiuk, P.
Błaszyk, M.
Szymański, B.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1810582.pdf
Data publikacji:
2009-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.50.-h
Opis:
In this contribution the in situ conductance vs. deposition time dependences of Fe/Si multilayers are analysed. The plot of resistance multiplied by the square of the thickness as a function of iron thickness shows that during the iron deposition initially amorphous-like Fe-Si mixture is formed, next the mixture crystallises, and finally bcc-Fe phase appears. The interface mixing is also manifested by the reduction of the total multilayer thickness measured by small angle X-ray diffraction.
Źródło:
Acta Physica Polonica A; 2009, 115, 1; 355-356
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of DC Magnetron Sputtering for Creation of Gas-Sensitive Indium Oxide Thin Films and Their Properties
Autorzy:
Luhin, V.
Zharsky, I.
Zhukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1400440.pdf
Data publikacji:
2013-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
73.50.-h
Opis:
In this paper the technology of gas sensitive semiconductor structures based on indium oxide thin films by DC magnetron sputtering of indium with the subsequent thermal oxidation is developed. Structure, surface morphology and chemical composition of the obtained films have been investigated by electron diffraction, scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy. Conditions of $In_2O_3$ films formation with high selectivity and sensitivity to $NO_2$, and $NH_3$ are established.
Źródło:
Acta Physica Polonica A; 2013, 123, 5; 837-839
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Post Annealing on La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Thin Films
Autorzy:
Cheng, W. F.
Leung, C. W.
Powiązania:
https://bibliotekanauki.pl/articles/2047232.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.-m
73.50.-h
Opis:
The stability of La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ films were deposited on (100) LaAlO$\text{}_{3}$ substrates at 650ºC with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (T$\text{}_{c}$) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, T$\text{}_{c}$ slightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the T$\text{}_{c}$ of the films strongly depended on the annealing procedures.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 117-122
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers
Autorzy:
Głowienka, D.
Szmytkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033869.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.50.-h
73.50.Pz
Opis:
The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 397-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermalization of One-Dimensional Electron Gas by Many-Body Coulomb Scattering
Autorzy:
Moško, M.
Cambel, V.
Powiązania:
https://bibliotekanauki.pl/articles/1931928.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
78.47.+p
Opis:
Quantum wires are peculiar in the sense that binary electron-electron collisions cannot thermalize energy distribution of the electrons in the same subband. We show that such thermalization occurs through many-body Coulomb scattering. We consider one-dimensional electron gas described by Newton equations of motion with many-body Coulomb forces. These equations are solved by molecular dynamics technique. Thermalization of the non-equilibrium distribution towards Maxwell function is demonstrated for a single-subband GaAs wire.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 157-160
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Near-Band Edge Spectral Hole in Quantum Well: No Evidence for Subpicosecond Plasma Thermalization
Autorzy:
Mos̆ko, M.
Mos̆ková, A.
Powiązania:
https://bibliotekanauki.pl/articles/1952682.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
78.47.+p
Opis:
We show that at low carrier energies and densities the carriers in a two-dimensional Coulomb gas interact via classical unscreened carrier-carrier collisions. This allows us to calculate exactly the thermalization due to the two-dimensional carrier-carrier collisions in a nonthermal low-density (≈10$\text{}^{10}$ cm$\text{}^{-2}$) two-dimensional plasma excited near the band edge of an undoped GaAs quantum well. The thermalization is found to be 10-15 times slower than the 200 fs thermalization deduced from the previous spectral-hole burning measurements, which means that the spectral hole does not reflect the thermalization process. We also show that the Born approximation fails in describing such carrier-carrier collisions.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 1055-1059
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Annealing Effect on Dark Electrical Conductivity and Photoconductivity of Ga-In-Se Thin Films
Autorzy:
Isik, M.
Gullu, H.
Powiązania:
https://bibliotekanauki.pl/articles/1029832.pdf
Data publikacji:
2018-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
73.61.Jc
Opis:
Dark-conductivity and photoconductivity properties of thermally evaporated Ga-In-Se (GIS) thin films were investigated in the temperature range of 80-430 K. All measurements were performed on as-grown and annealed GIS thin films at 300 and 400° to get information about the effect of the annealing temperature on the conductivity properties. Room temperature conductivity was obtained as 1.8 × 10^{-8} Ω^{-1} cm^{-1} for as-grown films and increased to 3.6 × 10^{-4} Ω^{-1} cm^{-1} for annealed films at 400°. Analysis of the dark-conductivity data of as-grown films revealed nearly intrinsic type of conductivity with 1.70 eV band gap energy. Temperature dependent dark conductivity curves exhibited two regions in the 260-360 and 370-430 K for both of annealed GIS films. Conductivity activation energies were found as 0.05, 0.16 and 0.05, 0.56 eV for films annealed at temperatures of 300 and 400°, respectively. The dependence of photoconductivity on illumination intensity was also studied in the range from 17 to 113 mW/cm^{2}.
Źródło:
Acta Physica Polonica A; 2018, 133, 5; 1119-1124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transport and Relaxation of Charge in Organic-Inorganic Nanocomposites
Autorzy:
Olenych, I.
Aksimentyeva, O.
Tsizh, B.
Horbenko, Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1030981.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.Ph
82.35.Np
Opis:
In this work the nanocomposites of poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) host matrix with porous silicon and ZnO nanoparticles were manufactured. The charge transport and relaxation processes in organic-inorganic nanocomposites were analyzed based on complex studies of electrical conductivity and depolarization current in the wide temperature range. By means of impedance spectroscopy we have established that increase of content of ZnO nanoparticles causes the rise in the internal resistance of the hybrid films. Based on the spectra of thermally stimulated depolarization current the localized electron states in the experimental samples are found. The combination of the porous silicon and zinc oxide nanoparticles provides an increase of surface area of the sensors and their high sensitivity to water molecules.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 851-855
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characterization of Ammonia Carbon-Based Sensors
Autorzy:
Kościński, M.
Seredych, M.
Bandosz, T.
Śliwińska-Bartkowiak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1402567.pdf
Data publikacji:
2015-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
A sensor response parameters of the ammonia sensors which are prepared by using composite of graphene oxide and poly(4-styrenesulfonic acid-co-maleic acid) sodium salt derived carbon are presented. Using the self-designed interdigitated electrode on the experimental setup, we were able to determine the capacity for gas sensing as a sensor response for low ammonia concentrations (20, 50, and 100 ppm).
Źródło:
Acta Physica Polonica A; 2015, 128, 2; 182-184
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetization Reversal in Cobalt Nanocolumn Structures Obtained by Glancing Angle Deposition
Autorzy:
Buchta, K.
Schmidt, Ch.
Trykowski, G.
Biniak, S.
Kempiński, M.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1428548.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.Ak
73.50.-h
73.61.-r
Opis:
An advanced deposition technique known as glancing angle deposition was used to fabricate randomly seeded magnetic cobalt columnar nanostructures. The existence of nanocolumns was confirmed by the cross-section scanning electron microscopy. The evolution in the magnetization reversal mechanism as a function of the film thickness was investigated. The coercivity $H_{C}$ and $M_{R}//M_{S}$ ratio (where $M_{R}$ and $M_{S}$ denote the remanent and saturation magnetization, respectively), derived from the magnetic hysteresis loops, are discussed as a function of the angle between the external magnetic field and the surface normal. The direction of the magnetization easy/hard axis and the columns inclination angle were determined on the basis of the angular dependences of the $H_{C}$ and the $M_{R}//M_{S}$. A crossover from the coherent rotation, based on the Stoner-Wohlfarth model, to the curling reversal mode was observed.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1222-1224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoconductivity Study of Sputter-Deposited $Cu_2O$ Films
Autorzy:
Bhattacharyya, S.
Reppin, D.
Sanguino, P.
Ayouchi, R.
Polity, A.
Schwarz, R.
Hofmann, D.
Meyer, B.
Powiązania:
https://bibliotekanauki.pl/articles/1492344.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.-w
73.50.-h
73.61.-r
Opis:
Cuprous oxide $(Cu_2O)$ thin films were deposited by radio frequency sputtering technique on fused silica substrates. The X-ray diffraction study of the $Cu_2O$ samples showed reflections from (111) and (200) planes of cubic $Cu_2O$. The samples were then annealed at 1008 K in nitrogen $(N_2)$ atmosphere. Annealed samples indicated strain relaxation. The samples were then characterized optically by measuring the transmittance using an ultraviolet-visible-near infrared photospectrometer. The band gap of the as-deposited samples were found to be ≈ 2.1 eV, whereas the annealed samples had a band gap of ≈ 2.6 eV. The transient photocurrent decay measurements of the annealed films indicated slow non-exponential power law decays in several time windows, indicating multiple trapping of the carriers in the deep defects within the band gap. The steady-state photo and dark current measurement and persistent photocurrent (PPC) was carried out on the annealed samples. In general, the photocurrent was found to be much smaller than the dark current. The steady-state and transient photocurrent measurements were utilized to determine the carrier lifetime-mobility product, 〈μτ 〉 of the samples and to determine the carrier mobility, 〈μ 〉.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-011-A-014
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
In Situ Conductance of Fe/Si and Fe/Ge Multilayers
Autorzy:
Chomiuk, P.
Błaszyk, M.
Luciński, T.
Wróblewski, M.
Susła, B.
Powiązania:
https://bibliotekanauki.pl/articles/1813491.pdf
Data publikacji:
2008-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Sx
73.50.-h
75.70.Cn
Opis:
In this paper we study Fe/Si and Fe/Ge multilayers prepared at room temperature by magnetron sputtering. In situ conductance measurements reveal the formation of interfacial Fe-Si and Fe-Ge mixtures. During the Fe deposition a modification of growth mode is noticed. Deposition of Si (or Ge) onto Fe leads to the reduction of the Fe layer thickness due to interdiffusion, and Fe-Si (or Fe-Ge) structures appear. Above about 1.3 nm of deposited Si (1.5 nm of Ge) nominally pure Si (Ge) starts growing. Surface topography of the Fe/Si multilayers is studied by atomic force microscopy.
Źródło:
Acta Physica Polonica A; 2008, 113, 2; 657-662
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetoresistive Properties of Manganite-Based Heterojunctions
Autorzy:
Devenson, J.
Vengalis, B.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Ašmontas, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807945.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
71.30.+h
73.50.-h
Opis:
Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1130-1132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Size Effects on the Electrical Resistivity of the Ultra-Thin Metallic Film
Autorzy:
Paja, A.
Działo, A.
Powiązania:
https://bibliotekanauki.pl/articles/1198662.pdf
Data publikacji:
2014-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:
In this article we investigate the electron-phonon interaction in metals in the system strongly reduced in one dimension. The Fermi sphere which represents the free-electron structure of a bulk metal was replaced by a discrete set of the Fermi disks. Using the variational expression for resistivity the temperature and film thickness dependences of the resistivity were derived and compared with experimental data.
Źródło:
Acta Physica Polonica A; 2014, 125, 5; 1220-1223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Resistivity of the Monoatomic Metallic Layer
Autorzy:
Paja, A.
Działo, A.
Powiązania:
https://bibliotekanauki.pl/articles/1400157.pdf
Data publikacji:
2013-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.50.Bk
73.63.-b
73.63.Hs
Opis:
We present new formula which describes the change of electrical resistivity of a monoatomic metallic layer with temperature. The results are compared with those given by the Bloch-Grüneisen formula for bulk metals. Our calculated values compared with those for bulk materials are significantly higher at low temperatures (T<0.1θ) and apparently lower at the remaining range of temperatures. Both effects can be explained by the low dimensionality of the sample.
Źródło:
Acta Physica Polonica A; 2013, 123, 4; 770-772
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Validity of Diffusional Model in Determination of Electric Transport Parameters of Semiconductor Compound
Autorzy:
Dussan, A.
Mesa, F.
Powiązania:
https://bibliotekanauki.pl/articles/1207470.pdf
Data publikacji:
2014-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.50.-h
73.61.Ga
73.50.Gr
Opis:
In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, $Cu_3BiS_3$, SnS, $Cu_2ZnSnSe_4$, and $CuInGaSe_2$ thin films. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the diffusional model, the density of states near the Fermi level $(N_{F})$, as well as the hopping parameters (W - activation energy and R - hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the diffusional model in semiconductor compounds.
Źródło:
Acta Physica Polonica A; 2014, 125, 2; 171-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Characterization of Thin Films of the Organic Superconductor α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$
Autorzy:
Moldenhauer, J.
Wachtel, H.
Schweitzer, D.
Gompf, B.
Eisenmenger, W.
Bele, P.
Brunner, H.
Keller, H. J.
Powiązania:
https://bibliotekanauki.pl/articles/1933377.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
74.70.Kn
73.50.-h
81.15.Gh
Opis:
α-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$ is a quasi-two-dimensional organic metal with a metal-insulator phase transition at 135 K. Thermal treatment at about 80°C leads to the metallic system α$\text{}_{t}$-(BEDT-TTF)$\text{}_{2}$I$\text{}_{3}$, which becomes superconducting below 8 K. Thin films of the α-phase (thickness between 500 and 3000 Å) have been evaporated in high vacuum onto several substrates and characterized by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and low field microwave absorption. Depending on the temperature of the substrate and the evaporation rate, the films exhibit different degrees of microcrystallinity, which under certain conditions can be strongly reduced and a completely covering film can be obtained. X-ray diffraction spectra reveal a high orientation with the c-axis perpendicular to the substrate and as well the successful conversion into the α$\text{}_{t}$-phase by tempering. Scanning electron microscopy and atomic force microscopy investigations prove that the conversion takes place without reducing the mechanical quality of the films. Low-field microwave-absorption experiments show that the α$\text{}_{t}$-films become superconducting with an onset at 9 K.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 823-827
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi Level Position in GaMnAs - a Thermoelectric Study
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027483.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
73.50.-h
Opis:
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 327-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes
Autorzy:
Valušis, G.
Seliuta, D.
Tamošiūnas, V.
Širmulis, E.
Balakauskas, S.
Gradauskas, J.
Sužiedėlis, A.
Ašmontas, S.
Anbinderis, T.
Narkūnas, A.
Papsujeva, I.
Lisauskas, A.
Roskos, H. G.
Köhler, K.
Powiązania:
https://bibliotekanauki.pl/articles/2041684.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
85.30.De
72.30.+q
Opis:
We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 184-187
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Transport and Spin Scattering in Very Thin Disordered Metallic Films
Autorzy:
Paja, A.
Spisak, B.
Powiązania:
https://bibliotekanauki.pl/articles/1814037.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Cz
72.25.Ba
73.50.-h
73.63.-b
Opis:
We consider the electron transport through a very thin disordered metallic film doped with magnetic impurities. We treat the film as a quasi-two-Łinebreak -dimensional system with structural disorder where some ions have spins and other are spinless. The interaction of conduction electrons with localized spins is described by means of the exchange term of the Hamiltonian. The scattering is treated in the first Born approximation and the potential is assumed to be the Coulomb screened one. The total effective cross-section is calculated as a sum of the part responsible for the potential scattering and the second part which comes from the spin-spin scattering. The Fermi sphere splits into separate sheets due to the finite size of the system in the z direction, therefore, the cross-section and the relaxation time are calculated for each sheet independently. The total transport relaxation time and the conductivity are obtained as functions of the thickness of the system and the contents of magnetic impurities. Some model calculations have been made for a thin disordered film of copper doped with manganese.
Źródło:
Acta Physica Polonica A; 2007, 112, 6; 1289-1295
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Transport Properties and Growth Mechanisms of Ni-Fe/Au/Co/Au Multilayers from In Situ Conduction Measurements
Autorzy:
Błaszyk, M.
Kempiński, M.
Buchta, K.
Chomiuk, P.
Luciński, T.
Powiązania:
https://bibliotekanauki.pl/articles/1534187.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
75.70.Cn
72.15.-v
Opis:
In the following we present the role of surface scattering at Au/Co and Au/Ni-Fe interfaces in Ni-Fe/Au/Co/Au multilayers deposited in different temperatures. Specularity parameter, which describes the electron scattering, is calculated from fitting in situ collected conductance data with the Fuchs-Namba-Tesanovic model. Application of the parallel resistors model enabled to depict changes between Au/Co and Au/Ni-Fe interfaces within multilayers for each repetition. The correlation between enhanced grain boundary scattering for higher deposition temperatures and surface roughness of Ni-Fe/Au/Co/Au multilayers is found.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 861-863
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Molecular Orientation on Photovoltaic Efficiency and Carrier Transport in a New Semiconducting Polymer
Autorzy:
Kažukauskas, V.
Pranaitis, M.
Sentein, C.
Rocha, L.
Raimond, P.
Duyssens, I.
Van Severen, I.
Lutsen, L.
Cleij, T.
Vanderzande, D.
Powiązania:
https://bibliotekanauki.pl/articles/1813394.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
81.40.Rs
81.40.Tv
73.61.Ph
Opis:
New functionalized soluble poly(p-phenylene vinylene) derivative bearing polar molecules was designed and synthesized in order to investigate effects of molecular orientation in polymer photovoltaic devices. The active polar molecule is the 4-(N-butyl-N-2-hydroxyethyl)-1- nitro-benzene group. The grafting of the push-pull molecule with a donor/transmitter/acceptor structure, possessing a large ground state dipole moment, enables the molecular orientation by a dc electric field. An internal electric field stored in such system facilitates exciton dissociation and improves charge transport in single-layer devices. In our systems an increase in the external quantum efficiency by a factor of about 1.5 to 2 is estimated. The associated effects of orientation on the carrier injection and transport properties were evidenced.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 1009-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures
Autorzy:
Butkutė, R.
Anisimovas, F.
Oginskis, A. K.
Steikūnienė, A.
Devenson, J.
Vengalis, B.
Powiązania:
https://bibliotekanauki.pl/articles/2047223.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.70.-i
71.30.+h
73.50.-h
75.70.Pa
Opis:
In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and related heterostructures composed of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and p-type La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$. The ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples were prepared by a conventional solid state reaction technique. Single phase La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films and La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$ Ca$\text{}_{0.33}$MnO$\text{}_{3}$ heterostructures were grown on lattice-matched perovskite NdGaO$\text{}_{3}$ substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples and thin films from thermopower data. Both ceramic samples and thin films of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ material and the heterostructures.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 111-115
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Dynamics in $Ga_{1-x}Mn_{x}As$ Studied by Resistance Noise Spectroscopy
Autorzy:
Lonsky, M.
Teschabai-Oglu, J.
Pierz, K.
Sievers, S.
Schumacher, H.
Yuan, Y.
Böttger, R.
Zhou, S.
Müller, J.
Powiązania:
https://bibliotekanauki.pl/articles/1397018.pdf
Data publikacji:
2018-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
73.50.Td
73.50.-h
73.61.-r
64.60.ah
61.72.-y
Opis:
We report on electronic transport measurements of the magnetic semiconductor Ga_{1-x}Mn_{x}As, whereby the defect landscape in various metallic thin films (x=6%) was tuned by He-ion irradiation. Changes in the distribution of activation energies, which strongly determine the low-frequency 1/f-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/f noise and can give rise to random telegraph signals, which were observed in films with x=7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature.
Źródło:
Acta Physica Polonica A; 2018, 133, 3; 520-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
AFM, XRD and HRTEM Studies οf Annealed FePd Thin Films
Autorzy:
Perzanowski, M.
Zabila, Y.
Morgiel, J.
Polit, A.
Krupiński, M.
Dobrowolska, A.
Marszałek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1539149.pdf
Data publikacji:
2010-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.bd
68.55.-a
73.50.-h
68.37.Yz
Opis:
Ferromagnetic FePd L $1_{0}$ ordered alloys are highly expected as forthcoming high-density recording materials, because they reveal a large perpendicular magnetocrystalline anisotropy [1]. The value of the magnetic anisotropy of FePd alloy strongly depends on the alloy composition, degree of alloy order as well as on the crystallographic grain orientation. In particular, to obtain the perpendicular anisotropy, it is necessary to get the films with (001) texture. One of the successful methods, which allows one to obtain highly ordered alloy, is a subsequent deposition of Fe and Pd layers, followed by an annealing at high temperature. This paper presents the study of the FePd thin alloy film structure changing in the result of high temperature annealing. During the annealing in high vacuum, the measurements of electrical resistance were performed, indicating the regions of different structure evolution. Changes in the crystal structure and surface morphology induced by thermal treatment were investigated by X-ray diffraction, atomic force microscopy, as well as high resolution transmission electron microscopy and then compared with electrical resistivity measurement. The slow thermal annealing of the deposited layers leads to the formation of L $1_{0}$ ordered FePd alloy with preferred (111) grain orientation. After the annealing at the highest used temperature, the dewetting process was observed, resulting in a creation of well oriented, regular nanoparticles.
Źródło:
Acta Physica Polonica A; 2010, 117, 2; 423-426
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films
Autorzy:
Balevičius, S.
Stankevič, V.
Žurauskienė, N.
Šimkevičius, Č.
Paršeliūnas, J.
Cimmperman, P.
Abrutis, A.
Plaušinaitienė, V.
Powiązania:
https://bibliotekanauki.pl/articles/2041723.pdf
Data publikacji:
2005-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.47.Gk
75.30.Gw
73.50.-h
68.55.Jk
Opis:
The magnetoresistance anisotropy of ultrathin La$\text{}_{0.83}$Sr$\text{}_{0.17}$Mn O$\text{}_{3}$ films deposited on NdGaO$\text{}_{3}$ substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.
Źródło:
Acta Physica Polonica A; 2005, 107, 1; 203-206
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Model of Anisotropic Electrical Resistivity in Rough Thin Films
Autorzy:
Szumiata, T.
Gzik-Szumiata, M.
Powiązania:
https://bibliotekanauki.pl/articles/1534184.pdf
Data publikacji:
2010-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.At
73.23.Ad
75.70.Ak
75.47.-m
Opis:
In this work a new model of electrical resistivity is proposed in order to study the relationship between surface roughness geometry and thin films resistivity. The model is based on the numerical dynamic averaging of electron mean free path over whole simulated structure of rough film. For current-in-plane configuration the resistivity increases with decreasing film thickness faster than for current-perpendicular-to-plane one. Our simulations showed that big roughness depth and fine in-plane spatial period of roughness are crucial factors increasing the resistivity of ultrathin metallic layers.
Źródło:
Acta Physica Polonica A; 2010, 118, 5; 859-860
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
Autorzy:
Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1492501.pdf
Data publikacji:
2011-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh
Opis:
The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
Źródło:
Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Phonon Contribution in Thermodynamics and Transport Properties of Ultrathin Ceramic Films
Autorzy:
Jaćimovski, S.
Šetrajčić, J.
Jaćimovski, M.
Stojanović, V.
Powiązania:
https://bibliotekanauki.pl/articles/1205327.pdf
Data publikacji:
2014-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.-h
73.61.-r
74.25.fc
66.30.Xj
65.40.-b
Opis:
The dispersion law, density states of phonons, thermodynamics properties and thermal conductivity was analyzed in this paper. It has been shown that at low temperatures, thermal conductivity of thin film is considerably lower that of bulk-structure. It turned out that phonons in thin film require activation energy for exciting. This leads to extremely low specific heat and specific conductivity at low temperatures. Consequences of quoted facts were discussed in detail and their influence on kinetic and thermodynamic properties of thin films is estimated.
Źródło:
Acta Physica Polonica A; 2014, 126, 3; 811-819
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Behaviour of Nanostructured Porous Silicon
Autorzy:
Azim-Araghi, M.
Ashrafabadi, S.
Kanjuri, F.
Powiązania:
https://bibliotekanauki.pl/articles/1419847.pdf
Data publikacji:
2012-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.30.+y
73.40.Sx
73.50.-h
73.90.+f
73.63.Rt
68.37.Hk
Opis:
The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at $10^2 - 10^5$ Hz frequency range.
Źródło:
Acta Physica Polonica A; 2012, 122, 1; 170-173
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
New Semiconductor Devices
Autorzy:
Balestra, F.
Powiązania:
https://bibliotekanauki.pl/articles/1811906.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
73.20.-r
73.21.-b
73.23.-b
73.30.+y
73.40.-c
73.50.-h
73.63.-b
Opis:
A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 945-974
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
LSMO/YBCO heterostructures and investigation of "negative" resistance effect in the interface
Autorzy:
Sojková, M.
Nurgaliev, T.
Štrbík, V.
Chromik, Š.
Blagoev, B.
Španková, M.
Powiązania:
https://bibliotekanauki.pl/articles/1053094.pdf
Data publikacji:
2017-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.-c
73.40.Cg
74.78.Fk
74.72.-h
75.50.Cc
Opis:
Samples containing the ferromagnetic manganite La_{0.67}Sr_{0.33}MnO₃ (LSMO) and high temperature superconducting YBa₂Cu₃O₇ (YBCO) single thin film areas and YBCO/LSMO bilayer area were prepared on LaAlO₃ (LAO) substrates and were used for investigation of the electrical properties of the interface. The measurements in the YBCO/LSMO interface demonstrated "negative" values of the resistance. A good interpretation of the obtained results was performed in the framework of a 1D model, which took into account the resistance of the interface R_{if} and the temperature dependence of the resistance of YBCO and LSMO films. It was shown that the effect of "negative" resistance arises because of the redistribution of the measuring electrical current in the interphase area if the resistance of the interface R_{if} is small in comparison with the resistances of the neighboring electrodes.
Źródło:
Acta Physica Polonica A; 2017, 131, 4; 842-844
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
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