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Tytuł:
Mott-Schottky Analysis of the $P3HT:ZnS_\text{cubic}$ and $P3HT:ZnS_\text{hexa}$ Bulk Heterojunction Solar Cells
Autorzy:
Abdul Kareem, T.
Powiązania:
https://bibliotekanauki.pl/articles/1398356.pdf
Data publikacji:
2016-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.85.Rs
73.40.Lq
73.40.Sx
73.50.Pz
73.61.Ga
73.61.Ph
73.63.Bd
81.05.Dz
88.40.jp
88.40.jr
Opis:
Bulk heterojunction solar cells of sphalerite and wurtzite ZnS incorporated P3HT were fabricated and their Mott-Schottky analysis was performed to find the conduction mechanism of the devices. The analysis shows the formation of a Schottky junction and band unpinning at the P3HT:ZnS-Al contact and it confirms the hole conductivity in the active material.
Źródło:
Acta Physica Polonica A; 2016, 129, 3; 409-413
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen and its Complexes in Silicon
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Gosciński, K.
Andersen, O.
Powiązania:
https://bibliotekanauki.pl/articles/2014151.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
In this study the technique of Laplace transform (high resolution) deep level transient spectroscopy combined with the uniaxial stress method has been used to study a symmetry and the defect reconfiguration kinetics (the stress induced alignment) of some forms of hydrogen-related centres. We have confirmed the trigonal symmetry of the defect related to the isolated bond centred hydrogen. When hydrogen decorates the vacancy-oxygen pair (the A centre) the apparent defect orthorhombic symmetry is not lowered as a result of a very high hydrogen jumping rate between two unsaturated broken bonds of the vacancy. We also show that the stress-induced defect alignment in some cases can be related to the same microscopic mechanism of the hydrogen motion as it is for the diffusion process.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 231-239
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Iron-Boron Pair in Silicon: Old Problem Anew
Autorzy:
Dobaczewski, L.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1946552.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
For the iron-boron pair in the p-type silicon two different configurations of the defect are observed: stable and metastable. The reported metastable configuration is the first step in a dissociation process of the stable, i.e. of trigonal symmetry, configuration of the pair. Rate equations for the two-step iron-boron pair dissociation allowed us to evaluate the dissociation rates for both configurations of the pair. The driving force for the creation and, then, dissociation of the metastable pair is the minority carrier injection followed by the electron-hole recombination process in the space charge region. A use of the high-resolution Laplace-transform deep level transient spectroscopy allowed us to demonstrate for both of the configurations the influence of the magnetic field on the hole emission.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 613-622
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Lattice Sitting of Platinum Atoms in Diluted SiGe Alloys
Autorzy:
Dobaczewski, L.
Bonde Nielsen, K.
Nylandsted Larsen, A.
Lundsgaard Hansen, J.
Gościński, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1969056.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
71.55.Cn
73.40.Lq
Opis:
In this report we present high-resolution spectra obtained with a use of the Laplace transform deep level transient spectroscopy for platinum diffused into dilute (0-5% of Ge) SiGe alloys. Very significant changes are observed in the spectra associated with the transition metals as the germanium content is altered. We interpret these spectra in terms of the configurations of silicon and germanium atoms surrounding the transition metal. In order to explain the observed behaviour both the first and second nearest neighbour shells are considered.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 297-299
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single Temperature Scan Determination of Defect Parameters in DLTS Experiment
Autorzy:
Dobaczewski, L.
Kancleris, Z.
Bonde Nielsen, K.
Peaker, A. R.
Powiązania:
https://bibliotekanauki.pl/articles/1968023.pdf
Data publikacji:
1997-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
Many point and extended defects in silicon, and other semiconducting materials, have been relatively well characterised by the standard DLTS technique. In this method the activation energy of carrier emission from the defect is calculated after multiple temperature scans. In this paper we demonstrate a new approach to the technique, in which after a single temperature scan the complete Arrhenius plot can be constructed for defects present in the sample with considerable concentrations. This method is much faster, accurate, and offers a much higher resolution in comparison with the standard DLTS method.
Źródło:
Acta Physica Polonica A; 1997, 92, 4; 724-726
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transition Metal-Related Centres in Silicon Studied by High-Resolution Deep Level Transient Spectroscopy
Autorzy:
Dobaczewski, L.
Kamiński, P.
Kozłowski, R.
Surma, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933733.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
71.55.Cn
68.55.Ln
Opis:
High-resolution Laplace-transform deep level transient spectroscopy technique has been used to study a fine structure in the carrier emission process for transition metal- and thermal donors-related defects in silicon. For the case of the transition metal centres the method revealed the fine structure when the defect has a similar emission characteristics to other defects in the crystal. The method also demonstrated the complex emission process for the thermal donors.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 703-706
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Barriers in Miniaturization of Electronic Devices and the Ways to Overcome Them - from a Planar to 3D Device Architecture
Autorzy:
Godlewski, M.
Guziewicz, E.
Gierałtowska, S.
Łuka, G.
Krajewski, T.
Wachnicki, Ł.
Kopalko, K.
Powiązania:
https://bibliotekanauki.pl/articles/1807598.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.-p
73.40.Lq
73.40.Qv
81.05.Dz
81.15.-z
Opis:
We witness a new revolution in electronic industry - a new generation of integrated circuits uses as a gate isolator $HfO_{2}$. This high-k oxide was deposited by the atomic layer deposition technique. The atomic layer deposition, due to a high conformality of deposited films and low growth temperature, has a large potential to be widely used not only for the deposition of high-k oxides, but also of materials used in solar cells and semiconductor/organic material hybrid structures. This opens possibilities of construction of novel memory devices with 3D architecture, photovoltaic panels of the third generation and stable in time organic light emitting diodes as discussed in this work.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-19-S-21
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductance Fluctuations in Microstructures of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Lenard, A.
Plesiewicz, W.
Jaroszyński, J.
Cieplak, Marek
Skośkiewicz, T.
Dietl, T.
Kamińska, E.
Piotrowska, A.
Bulka, B.
Powiązania:
https://bibliotekanauki.pl/articles/1890700.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
Opis:
Microscopic four-contact probes to semimagnetic HgCdMnTe grain-boundary inversion layers have been photolithographically patterned. Magnetoresistance measurements performed on these samples revealed aperiodic conductance fluctuations of the magnitude of the order of e$\text{}^{2}$/h. Quantitative analysis of both fluctuation amplitude and their mean period indicate that we have approached the mesoscopic regime in our system. This opens new possibilities in studies of spin-subsystem dynamics in semimagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 307-310
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
Autorzy:
Grabecki, G.
Takeyama, S.
Dietl, T.
Takamasu, T.
Shimamotο, Y.
Miura, N.
Powiązania:
https://bibliotekanauki.pl/articles/1933749.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Hc
73.50.Fq
73.20.Dx
73.40.Lq
Opis:
Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 731-734
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Studies of HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Wróbel, J.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1879930.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
73.40.Lq
Opis:
We report preliminary results of optical measurements performed on Hg$\text{}_{1-x-k}$Cd$\text{}_{x}$Mn$\text{}_{k}$Te grain boundaries. Photovoltaic spectra and I-V characteristics under illumination exhibit metastable behavior, confirming our previous conclusions based on transport measurements under high hydrostatic pressure.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 221-223
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Precision of the Hall Quantization in Naturally Occurring Two-Dimensional System - HgCdMnTe Bicrystals
Autorzy:
Grabecki, G.
Wittlin, A.
Dietl, T.
Teunissen, P. A. A.
Wiegers, S. A. J.
Perenboom, J. A. A. J
Powiązania:
https://bibliotekanauki.pl/articles/1921658.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
72.80.Ey
73.40.Lq
Opis:
New magnetoresistance measurements on naturally occurring inversion layers adjacent to grain boundaries in narrow gap diluted magnetic semiconductor HgCdMnTe (Eg ≤ 200 meV) have been performed. The magnetic fields up to 20 T simultaneously with millikelvine temperatures have been applied. Possible experimental factors affecting the quantum Hall effect in our system are discussed in detail.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 733-736
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
Autorzy:
Grzanka, S.
Łuka, G.
Krajewski, T. A.
Guziewicz, E.
Jachymek, R.
Purgal, W.
Wiśniewska, R.
Sarzyńska, A.
Bering-Staniszewska, A.
Godlewski, M.
Perlin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2048094.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Kp
73.40.Lq
Opis:
Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 672-674
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Images of the Response Signal of a 2D Gas of Carriers to a Pulsed Beam of 3D Phonons
Autorzy:
Jasiukiewicz, Cz.
Lehmann, D.
Paszkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929698.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.20.Kr
66.70.+f
73.40.Lq
Opis:
The patterns for the time integrated drag current induced by a pulsed beam of bulk phonons in a 2D gas of charge carriers are calculated. A beam of Planckian phonons propagates in a GaAs crystal. We considered a 2D gas of electrons lying in a {001} plane and a 2D gas of holes lying in the {311} plane. Planckian phonons are radiated by an extended (Gaussian) source.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 661-664
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Temperature Dependence of Properties of Heterojunctions of Some TCNQ Salts in Polymer Matrices with p- or n-Doped Silicon
Autorzy:
Jeszka, J. K.
Tracz, A.
Boiteux, G.
Seytre, G.
Kryszewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1933656.pdf
Data publikacji:
1995-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
72.80.Le
Opis:
The temperature dependence of the electrical properties of heterojunctions with silicon formed by conductive organic polymer composites with networks of two complex tetracyanoquinodimethane salts (of N-n-butyl-isoquinolinium and of diethyl methyl sulphonium cations) were studied. We show that it is possible to prepare junctions with quite good rectifying properties, comparable to those obtained using other organic semiconductors. The observed forward-bias current-voltage characteristics can be satisfactorily fitted using the modified Schottky equation. Reverse bias and C-V characteristics show that the transport mechanism, especially in the case of p-Si junctions is more complicated and probably tunnelling between localized levels plays an important role.
Źródło:
Acta Physica Polonica A; 1995, 88, 3; 533-541
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Transmission Coefficient for a Double-Barrier Quantum Well Structure
Autorzy:
Kaczmarek, E.
Szkiełko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1891331.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Lq
73.40.Gk
Opis:
In this paper the transmission coefficient for a double-barrier quantum well (DBQW) structure as a function of applied voltage is calculated, for the first time, using WKB approximation: This approach allows to discuss a dependence of several quantities characteristic of the system (e.g. the value of the coefficient, resonance voltage, charge stored in the well) on the barrier and the well parameters.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 441-444
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 30

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