Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "73.22.Dj" wg kryterium: Temat

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-14 z 14
    Tytuł:
    Electronic structure calculations of InP-based coupled quantum dot-quantum well structures
    Autorzy:
    Andrzejewski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1160527.pdf
    Data publikacji:
    2016-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    73.21.Fg
    73.22.Dj
    74.50.+r
    Opis:
    In this work we investigate the electronic structure of coupled 0D-2D nanostructures. The respective confined state energy levels in a quantum dot-quantum well system are calculated for various conduction band offsets - between the quantum dot and surrounding material. The calculated electron and hole energy levels with their wave functions allow determining if the wave functions are within the injector quantum well or within the quantum dot and if the carrier positions on the energy scale are appropriate from the point of view of a possible laser structure utilizing the so-called tunnel injection scheme. It is shown that for an adequate width of an injector quantum well and the conduction band offsets designing an optimal tunnel injection structure is possible.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 1a; A-97-A-99
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Spin-Orbit Coupling Effect on Bismuth (111) Bilayer
    Autorzy:
    Bieniek, M.
    Woźniak, T.
    Potasz, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398639.pdf
    Data publikacji:
    2016-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.Dj
    74.20.Pq
    Opis:
    Band inversion process in Bi(111) bilayer is studied using many-orbital tight-binding model, supported by the density-functional theory calculations, with a controllable spin-orbit coupling constant in tight-binding model. This effect is important in order to verify a topological nature of this material. We show that after closing of the energy gap leading to crossing of the valence and conduction bands, the second band inversion occurs within a valence band. We analyze orbital composition and spin textures of bands within different regimes. Around a Γ point, all spins align in one direction before the first band inversion. Moreover, a change of signs for some spin components after a band inversion is noticed. After the second band inversion, a significant change of orbital contribution of the top of the valence band is observed.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 2; 609-612
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Surface Electronic Properties of Fe Nanoparticles on c(2×2)-N/Cu(001)
    Autorzy:
    Getzlaff, M.
    Bode, M.
    Wiesendanger, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036899.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.55.Ac
    68.65.-k
    73.22.Dj
    81.15.Kk
    Opis:
    We prepared nanoscaled particles consisting of ferromagnetic material on a nanostructured template. This nanolithographic procedure allows to fabricate high-density magnetic nanodots in a highly ordered way. For this purpose, Fe particles were grown on the c(2×2)-N/Cu(001) surface which exhibits a checkerboard-like structure. Scanning tunneling spectroscopic measurements demonstrate that the electronic properties of the areas with deposited material are identical to clean copper. Fe nanoparticles on the reconstructed patches show a significantly different electronic behavior. These observations directly hint to a covering of iron with copper on the clean surface.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 3-4; 327-335
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron and Hole States in Closed Spherical Quantum Dot with Linearly Graded Composition
    Autorzy:
    Kostić, R.
    Stojanović, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808044.pdf
    Data publikacji:
    2009-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.Dj
    73.21.La
    Opis:
    The theoretical investigation of the electron and hole spectra in a quantum dot with a linearly graded composition within the effective mass approximation is presented. The particular example is β-HgS surrounded by CdS. β-HgS core of radius $r_C$ is surrounded by concentric spherical layers each of $Hg_{1-x}Cd_{x}S$ composition (x is function of r) and finally, form radius $r_S$ by CdS. The existence of these intermediate layers, as model of graded composition, influences rapidly electron and hole spectra.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 4; 768-770
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Multiple Exciton Generation in InAs Nanocrystals
    Autorzy:
    Kowalski, P.
    Machnikowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811947.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Bf
    73.22.Dj
    Opis:
    We study a simple theoretical model of multiple exciton generation by a single high-energy photon absorbed in an InAs nanocrystal. We calculate the Coulomb matrix element for the electron-trion coupling in an InAs nanocrystal and show that due to the resulting coupling between single-pair and two-pair states the latter becomes weakly optically active.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1187-1192
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Determination of Quantum Dot Morphology from Magnetooptical Properties
    Autorzy:
    Křápek, V.
    Schliwa, A.
    Bimberg, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047692.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.La
    73.22.Dj
    73.43.Cd
    73.61.Ey
    78.20.Bh
    78.20.Ls
    Opis:
    We present here the calculations of magnetooptical properties in InAs/GaAs quantum dots with different shapes, including excitonic effects. The influence of several structural parameters, such as vertical profile, aspect ratio, and basis squareness is discussed, as well as the possibility to retrieve the structural parameters from magnetooptical measurements.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 339-343
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polarization-Induced Band Inversion in In-Rich InGaN/GaN Quantum Wells
    Autorzy:
    Łepkowski, S.
    Bardyszewski, W.
    Rodak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195356.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.21.Fg
    73.22.Dj
    Opis:
    We theoretically study the polarization-induced band inversion phenomenon in c-plane In-rich InGaN/GaN quantum wells. Our calculations performed using the k·p method with the 8×8 Rashba-Sheka-Pikus Hamiltonian for the structures with the indium content between 90% and 100% show that the reordering of the conduction and valence bands occurs for the quantum well widths below the theoretical values of critical thickness for InGaN layers pseudomorphically grown on GaN substrates.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1154-1155
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Geometric-Confinement Parameters on the Electronic Properties of Quantum Ring
    Autorzy:
    Moskal, S.
    Spisak, B. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047364.pdf
    Data publikacji:
    2007-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.23.Ra
    73.22.Dj
    73.43.Cd
    Opis:
    We investigate the electronic properties of the quantum rings modelled by a two-dimensional non-singular potential with the cylindrical symmetry as well as the influence of the potential's parameters on energy spectra. In the presence of the external magnetic field we also calculated the persistent currents in such structures in the ballistic regime.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 1; 101-112
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Oblique Reflection of Electrons from a Potential Barrier in Heterostructures
    Autorzy:
    Pfeffer, P.
    Zawadzki, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205321.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.70.Ej
    73.22.Dj
    73.40.-c
    75.76.+j
    Opis:
    Reflection of electrons from a potential barrier in heterostructures is described. An electric field of the barrier causes spin splitting of electron energies via the spin-orbit interaction and its form is calculated in the three-level $k·p$ model for a nontrivial case of unbound electrons. It is shown that if the potential barrier is the only source of the spin-orbit interaction, the spin-flip electron reflections are not possible. However, there appear two unexpected possibilities related to the spin-orbit interaction: (a) non-attenuated electron propagation in the barrier whose height exceeds the energies of incoming electrons, (b) total reflection of electrons whose energies exceed barrier's height. It is indicated that the system can serve as a source of spin-polarized electron beams.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 820-826
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitonic Magnetoabsorption of Cylindrical Quantum Disks
    Autorzy:
    Schillak, P.
    Czajkowski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492888.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.67.Hc
    73.22.Dj
    73.21.La
    71.35.Ji
    Opis:
    We show how to compute the optical functions (the complex magnetosusceptibility, dielectric function, magnetoreflection) for semiconductor quantum disks exposed to a uniform magnetic field in the growth direction, including the excitonic effects. The method uses the microscopic calculation of nanostructure excitonic wave functions and energy levels, and the macroscopic real density matrix approach to compute the electromagnetic fields and susceptibilities. The electron-hole screened Coulomb potential is adapted and the valence band structure is taken into account in the cylindrical approximation, thus separating light- and heavy-hole motions. The confinement potentials are taken as step-like both in the z and in-plane directions. Numerical calculations have been performed for $In_{0.55}Al_{0.45}As$ (disk)/$Al_{0.35}Ga_{0.65}As$ (barrier) and InP/GaP disks and the results are in a good agreement with the available experimental data.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 888-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
    Autorzy:
    Taube, A.
    Gierałtowska, S.
    Gutt, T.
    Małachowski, T.
    Pasternak, I.
    Wojciechowski, T.
    Rzodkiewicz, W.
    Sawicki, M.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048120.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.dj
    77.22.Jp
    73.40.Qv
    81.15.Gh
    Opis:
    Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 696-698
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
    Autorzy:
    Taube, A.
    Kruszka, R.
    Borysiewicz, M.
    Gierałtowska, S.
    Kamińska, E.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492515.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.dj
    77.22.Ch
    73.40.Qv
    81.15.Gh
    81.15.Cd
    Opis:
    The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electron and Exciton Quasi-Stationary s-States in Open Spherical Quantum Dots
    Autorzy:
    Tkach, M.
    Seti, Ju.
    Voitsekhivska, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419890.pdf
    Data publikacji:
    2012-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.15.Dx
    73.21.La
    73.22.Dj
    73.90.+f
    Opis:
    The theoretical calculation of spectral parameters of electron and exciton quasi-stationary s-states in open spherical quantum dot is performed within the effective mass approximation and rectangular potentials model. The conceptions of probability distribution functions (over quasi-momentum or energy) of electron location inside of quantum dot and their spectral characteristics: generalized resonance energies and widths are introduced. It is shown that the generalized resonance energies and widths, obtained within the distribution functions, satisfy the Heisenberg uncertainty principle for the barrier widths varying from zero to infinity. At the same time, the ordinary resonance energies and widths defined as complex poles of scattering S-matrix, do not satisfy it for the small barrier widths and, therefore, are correct only for the open quantum dots with rather wide potential barriers.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 1; 207-211
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Novel Approach for Energy Spectrum Probing in Semiconducting Quantum Dots
    Autorzy:
    Zdrojek, M.
    Wąsik, M.
    Esplandiu, M.
    Bachtold, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419526.pdf
    Data publikacji:
    2012-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.22.Dj
    73.23.Hk
    73.63.Kv
    Opis:
    A new technique has been used to probe the electronic properties of quantum dots. Here we discuss the case of semiconducting CdSe dots. This technique allows us to fill (or empty) semiconducting quantum dot with many electrons. The detection scheme is based on an original approach where the investigated particle is attached to only one electrode, a carbon nanotube. The conductance of the nanotube is measured as a function of a gate voltage $(V_{g}),$ which allows the detection of individual electrons transferred onto the quantum dot. For certain range of $V_{g}$ we noticed no electron transfer which is attributed to the energy gap of the CdSe quantum dot. Our study shows that single-electron detection with carbon nanotube transistor represents a new strategy to study the separation between the electronic discrete energy levels of the semiconducting quantum dot.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 2; 321-323
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies